CN106536793A - 碳化硅半导体装置的制造方法以及碳化硅半导体装置 - Google Patents
碳化硅半导体装置的制造方法以及碳化硅半导体装置 Download PDFInfo
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- CN106536793A CN106536793A CN201580039339.5A CN201580039339A CN106536793A CN 106536793 A CN106536793 A CN 106536793A CN 201580039339 A CN201580039339 A CN 201580039339A CN 106536793 A CN106536793 A CN 106536793A
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- silicon carbide
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 114
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- Recrystallisation Techniques (AREA)
Abstract
提供能够减少形成在SiC基板上的SiC外延膜的缺陷的SiC半导体装置的制造方法以及通过该方法获得的SiC半导体装置。使用SiC半导体装置的制造方法,其包括:工序(A),在SiC基板上形成SiC外延膜;工序(B),以对该外延膜的表面进行化学机械研磨的方式进行平坦化处理直到算数平均表面粗糙度Ra成为0.3nm以下为止;工序(C),使上述外延膜的表面热氧化而形成牺牲氧化膜;工序(D),除去该牺牲氧化膜;以及工序(E),利用纯水对外延膜的经除去上述牺牲氧化膜的表面进行清洗。
Description
技术领域
本发明涉及碳化硅半导体装置的制造方法和碳化硅半导体装置,更具体地说,涉及减少形成在碳化硅基板上的碳化硅外延膜的缺陷数量的方法。
背景技术
现有的功率半导体装置形成在硅基板上,但对于硅材料而言,在物理性能方面接近性能极限,基板耐压高、电力损耗低、能够进行高温工作和高频工作的碳化硅(SiC)半导体装置正备受瞩目。对SiC半导体装置而言,通常有将低电阻的SiC基板作为基底,在其上形成SiC外延膜,以离子方式注入杂质来改善器件结构的方法。
在SiC中,由于Si与C结合时的周期结构的不同,因此具有存在大量2H、3C、4H、6H、15R等的多型体(多结晶形),结晶生长中易发生不匹配的问题。因此,在制作SiC单晶时,无法避免不同种类多型体的结晶混在一起,存在大量因结晶不匹配而导致的错位等结晶缺陷。如果在SiC基板上形成SiC外延膜,则存在直接以贯穿SiC基板表面的螺旋错位和/或贯穿SiC基板表面的刃状错位等的形态,或者转换为基底面错位和/或胡萝卜缺陷,并传播到外延膜,成为外延膜的缺陷的可能性。
另一方面,在SiC外延膜还存在并非因基底而引起的缺陷。例如,因成膜而产生的台阶聚集(Step bunching),除此以外还存在称为塌陷(downfall)的因在外延生长中异物附着在晶片表面而产生的缺陷等。
由于如果在SiC外延膜中存在结晶缺陷,则在制造出的SiC半导体装置出现漏电流异常和/或耐压不良,因此产品的成品率降低。
在下述的专利文献1~专利文献5中,公开了在外延膜形成前对SiC基板表面实施的减少缺陷的方法。另外,在专利文献6中公开了这样的减少外延膜的缺陷的方法,即,在SiC基板上形成SiC外延膜,加热至该外延膜的表面粗糙度Ra变为1nm以上为止,接着进行平坦化处理至Ra变为小于0.5nm为止。
现有技术文献
专利文献
专利文献1:日本特开2005-311348号公报
专利文献2:日本特开2006-32655号公报
专利文献3:日本特开2008-230944号公报
专利文献4:日本特开2010-182782号公报
专利文献5:国际公开2010/090024号
专利文献6:日本特开2008-222509号公报
发明内容
技术问题
然而,在记载于专利文献1~5的方法中,存在无法除去并非因基底而导致的外延膜的缺陷这样的问题。另一方面,在专利文献6记载的方法中,存在作为副作用而产生台阶聚集这样的问题。
因此,本发明的目的在于,提供能够减少在碳化硅基板上形成的碳化硅外延膜的缺陷的碳化硅半导体装置的制造方法,以及通过该方法获得的碳化硅半导体装置。
技术方案
为了实现上述目的,本发明的碳化硅半导体装置的制造方法的特征在于,包括:工序(A),在碳化硅基板上形成碳化硅的外延膜;工序(B),以对该外延膜的表面进行化学机械研磨的方式进行平坦化处理直到算数平均表面粗糙度Ra成为0.3nm以下为止;工序(C),使上述外延膜的表面热氧化而形成牺牲氧化膜;工序(D),除去该牺牲氧化膜;以及工序(E),利用去离子水对外延膜的经除去上述牺牲氧化膜的表面进行清洗。
根据本发明,能够通过化学机械研磨来除去在外延膜的生长中产生的缺陷,并且进一步将因化学机械研磨而引起的加工损伤与牺牲氧化膜一起除去。
在本发明的碳化硅半导体装置的制造方法中,优选通过化学机械研磨,使上述工序(A)中使用的碳化硅基板平坦化为算数平均表面粗糙度Ra为1nm以下。
根据上述形态,通过在外延膜生长前除去在碳化硅基板的表面露出的缺陷,从而能够减少外延膜的以碳化硅基板的结晶缺陷为起点的缺陷数量。
在本发明的碳化硅半导体装置的制造方法中,优选上述工序(B)的上述外延膜的研磨量为0.3μm以上且1μm以下。
根据上述形态,能够除去外延膜的缺陷,特别是能够除去占缺陷大多数的坑状缺陷。
在本发明的碳化硅半导体装置的制造方法中,优选上述工序(C)的上述牺牲氧化膜的厚度为20nm以上且100nm以下。
根据上述形态,能够除去因化学机械研磨导致的加工损伤。
在本发明的碳化硅半导体装置的制造方法中,优选上述工序(C)的上述牺牲氧化膜的形成温度为800℃以上且1350℃以下。
根据上述形态,能够准确地控制牺牲氧化膜的膜厚。
在发明的碳化硅半导体装置的制造方法中,优选利用含有氢氟酸的水溶液来除去上述工序(D)的上述牺牲氧化膜。
根据上述形态,能够相对于碳化硅外延层选择性地除去牺牲氧化膜,因此能够维持牺牲氧化前的光滑的表面粗糙度。
本发明的碳化硅半导体装置优选为通过上述任一方法制造出的碳化硅半导体装置。
通过减少外延膜的缺陷数量,从而能够以高成品率生产可靠性和电特性优异的碳化硅半导体装置。
有益效果
根据本发明,能够通过化学机械研磨除去在外延膜的生长中产生的结晶缺陷,并能够将因化学机械研磨而导致的加工损伤与牺牲氧化膜一起除去。通过减少外延膜的缺陷数量,从而能够以高成品率生产可靠性和电特性优异的碳化硅半导体装置。
附图说明
图1是表示本发明的SiC半导体装置的制造方法的一个实施方式的工序图。
图2是表示实施例的SiC外延膜的缺陷分布的图。
图3是表示比较例的SiC外延膜的缺陷分布的图。
图4是实施例的SiC外延膜表面的原子力显微镜的图像。
图5是比较例的SiC外延膜表面的原子力显微镜的图像。
符号说明
1:SiC基板
2:SiC外延膜
3:牺牲氧化膜
4:缺陷
具体实施方式
本发明的SiC半导体装置的制造方法的特征在于,由按顺序包括以下工序的制造工序构成:
(A)形成SiC外延膜的工序;
(B)化学机械研磨(CMP)工序;
(C)形成牺牲氧化膜的工序;
(D)除去牺牲氧化膜的工序;以及
(E)清洗工序。
其中,在上述各工序的前后,也可以插入其他工序。例如,在工序(A)之前插入化学机械研磨工序,能够提高SiC基板的平坦性。或者,在工序(A)之前插入照射反应性等离子体的工序,能够清洁SiC基板的表面。另外,在工序(B)之后插入磨砂(scrub)清洗,能够除去附着在SiC外延膜的表面的研磨剂。
在图1示意性地图示出了上述工序流程。在工序(A)中,在SiC基板1上形成SiC外延膜2,在工序(B)中,对SiC外延膜2进行化学机械研磨,在工序(C)中,形成牺牲氧化膜3,在工序(D)中,除去牺牲氧化膜3,在工序(E)中,用去离子水(DIW)进行清洗。在工序(A)产生的缺陷4通过工序(B)的化学机械研磨来除去。
[SiC基板]
本发明所使用的SiC基板没有特别限定,可使用例如对通过升华法或者化学气相生长(CVD)法所获得的块状结晶进行切片而得的基板。
SiC单晶的多型体没有特别限定,例如可列举4H-SiC、6H-S iC、3C-SiC等,但在功率半导体装置中优选使用绝缘耐压和载流子迁移率高的4H-SiC。进行外延生长的基板主面没有特别限定,例如在4H-SiC基板中,可列举(0001)Si面、(0001)C面等。
另外,为了防止在外延生长时混入多型体,优选为相对于[0001]方向具有1~12°的偏离角的偏离基板,更加优选以4°或者8°的偏离角倾斜而切割出的基板。
另外,优选使SiC基板的表面平坦化为算数平均表面粗糙度Ra成为1nm以下。例如,可以在形成SiC外延膜之前,对SiC基板的表面进行化学机械研磨。通过这样的方式,能够减少从SiC基板表面传播到SiC外延膜的缺陷数量。
[形成SiC外延膜的工序]
在SiC基板上形成SiC外延膜的方法没有特别限定,可以通过例如减压CVD法或者常压CVD法形成。
原料气体之中,可列举甲硅烷、二氯甲硅烷等作为Si的供给源,可列举丙烷、甲烷等作为C的供给源。另外,可以适当添加氮、氨水等作为n型掺杂气体,三甲基铝等作为p型掺杂气体。另外,为了稀释上述气体,可以使用氢、氩等作为载流气体。
CVD温度优选为1400℃以上且1800℃以下,更加优选为1500℃以上且1750℃以下。如果低于1500℃则生长速度缓慢,如果高于1750℃则产生表面缺陷,因此不优选。在利用减压CVD法的情况下,CVD压力优选为0Pa以上且20Pa以下,更加优选为1Pa以上且15Pa以下。
用于形成SiC外延膜的CVD装置没有特别限定,例如,可列举在水冷双重圆筒管内具有由石墨形成的热壁且利用感应线圈进行加热的方式等。
应予说明,可以在形成SiC外延膜时,对SiC基板的表面进行气体蚀刻来作为前处理。例如,使氯化氢气体接触到已加热至1000℃以上的SiC基板,来对SiC表面进行蚀刻,能够减少表面缺陷。
[化学机械研磨工序]
在本发明中,可以通过化学机械研磨进行平坦化,以使SiC外延膜的算数平均表面粗糙度Ra为0.3nm以下。如果SiC外延膜的Ra大于0.3nm,则形成在SiC外延膜上的栅氧化膜成为针孔和/或界面态多的膜,可靠性和/或器件性能降低,因此不优选。
另外,SiC外延膜的研磨量优选为0.3μm以上且1μm以下。如果如此进行研磨,则能够除去SiC外延膜的缺陷,特别是能够除去占缺陷大多数的坑状的缺陷。
对SiC外延膜的表面进行化学机械研磨的方法没有特别限定,例如,可以是使用固定磨料的化学机械研磨法、使用软质的研磨垫和研磨剂溶液的化学机械研磨法、或者在使用固定磨粒而进行研磨之后使用软质的研磨垫和研磨剂溶液的化学机械研磨法。研磨垫和研磨剂溶液可以使用市售的产品。
[形成牺牲氧化膜的工序]
在本发明中,为了除去因化学机械研磨而引入的SiC外延膜的加工损伤,可以使SiC外延膜的表面热氧化而形成厚度20nm以上且100nm以下的牺牲氧化膜。在此,加工损伤是指,因SiC外延膜的表面与磨料和/或研磨垫摩擦所产生的细小的划伤、晶格的紊乱以及异物粘着,这些加工损伤伴随着牺牲氧化膜的生长,被吸收到牺牲氧化膜中而消失,或者被分解而升华,因此可以在牺牲氧化膜下保留结晶性好的SiC外延膜。
形成牺牲氧化膜的方法没有特别限定,例如可以使用在800℃以上且1350℃以下,使包含水蒸气的氧化性气体流通的湿式氧化法,或者使经干燥的包含氧的氧化性气体流通的干式氧化法。此时,为了积极地除去金属污染,也可以在上述氧化性气体中混合包含卤族元素的气体(例如氯化氢)。
另外,在热氧化之前,可以用混合氨水和过氧化氢水而成的水溶液、混合盐酸和过氧化氢水而成的水溶液、或者含有氢氟酸的水溶液来清洗SiC外延膜。如此,能够在有机物和/或金属污染少的状态下,氧化SiC外延膜。
[除去牺牲氧化膜的工序]
牺牲氧化膜是吸收SiC外延膜的缺陷的同时生长而成的针孔和/或陷阱能级多的膜,因此不优选用作栅绝缘膜或隔离膜。因此,在本发明中,可以将热氧化SiC外延膜而形成的牺牲氧化膜浸渍在例如含有氢氟酸的水溶液而选择性地除去牺牲氧化膜。由于SiC在氢氟酸中不溶解,因此能够维持牺牲氧化前的光滑的表面粗糙度,并在其上形成高品质的栅绝缘膜。
[清洗工序]
在本发明中,可以在除去牺牲氧化膜后,用去离子水(DIW)进行流水清洗,然后干燥,获得清洁表面。干燥方法没有特别限定,例如可以使用旋转干燥、异丙醇蒸气干燥等。
[SiC半导体装置的制造]
可以使用具有通过上述工序所获得的缺陷数量少的SiC外延膜的SiC基板,来制造SiC半导体装置。
如此制造出的SiC半导体装置具有无针孔且界面态少的栅绝缘膜,其绝缘耐压高,漏电流小,饱和电流大,可靠性和性能优异。
实施例
[实施例]
对SiC基板(多型体4H,4°偏离基板)的表面进行化学机械研磨,通过原子力显微镜测定出算数平均表面粗糙度Ra。接着,在通过减压CVD法形成膜厚10μm的SiC外延膜后,通过化学机械研磨来研磨除去从表面起算50nm深度的SiC外延膜。然后,通过使用共聚焦显微镜的表面缺陷检查装置来获取缺陷分布图,进一步通过原子力显微镜来测定出SiC外延膜的算数平均表面粗糙度Ra。
[比较例]
对SiC基板(多型体4H,4°偏离基板)的表面进行化学机械研磨,通过原子力显微镜测定出算数平均表面粗糙度Ra。接着,在通过减压CVD法形成膜厚10μm的SiC外延膜后,通过使用共聚焦显微镜的表面缺陷检查装置来获取缺陷图,进一步通过原子力显微镜来测定出SiC外延膜的算数平均表面粗糙度Ra。
在图2、图3示出获取的缺陷分布图。SiC外延膜的缺陷用黑点表示。在SiC外延膜形成后,相对于未进行化学机械研磨的比较例(图3),在经化学机械研磨的实施例(图2)中,缺陷数量急剧减少。
在图4、图5,示出利用原子力显微镜测定出的SiC外延膜的表面凹凸图像。在SiC外延膜形成后,在未进行化学机械研磨的比较例(图5)中,Ra为1.0nm,而经化学机械研磨的实施例(图4)中,Ra减小至0.254nm,实现了目标值0.3nm以下。
Claims (7)
1.一种碳化硅半导体装置的制造方法,其特征在于,包括:
工序(A),在碳化硅基板上形成碳化硅的外延膜;
工序(B),以对所述外延膜的表面进行化学机械研磨的方式进行平坦化处理直到算数平均表面粗糙度Ra成为0.3nm以下为止;
工序(C),使所述外延膜的表面热氧化而形成牺牲氧化膜;
工序(D),除去所述牺牲氧化膜;以及
工序(E),利用去离子水对外延膜的经除去所述牺牲氧化膜的表面进行清洗。
2.根据权利要求1所述的碳化硅半导体装置的制造方法,其特征在于,通过化学机械研磨,使所述工序(A)中使用的碳化硅基板平坦化为算数平均表面粗糙度Ra为1nm以下。
3.根据权利要求1所述的碳化硅半导体装置的制造方法,其特征在于,在所述工序(B)中,所述外延膜的研磨量为0.3μm以上且1μm以下。
4.根据权利要求1所述的碳化硅半导体装置的制造方法,其特征在于,在所述工序(C)中,所述牺牲氧化膜的厚度为20nm以上且100nm以下。
5.根据权利要求1所述的碳化硅半导体装置的制造方法,其特征在于,在所述工序(C)中,所述牺牲氧化膜的形成温度为800℃以上且1350℃以下。
6.根据权利要求1所述的碳化硅半导体装置的制造方法,其特征在于,在所述工序(D)中,利用含有氢氟酸的水溶液来除去所述牺牲氧化膜。
7.一种通过权利要求1~6中任一项记载的碳化硅半导体装置的制造方法制造而成的碳化硅半导体装置。
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CN112259451A (zh) * | 2020-09-22 | 2021-01-22 | 山东天岳先进科技股份有限公司 | 一种碳化硅晶片的位错识别方法及碳化硅晶片与应用 |
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US11189518B2 (en) * | 2019-11-15 | 2021-11-30 | Advanced Semiconductor Engineering, Inc. | Method of processing a semiconductor wafer |
IT202000016279A1 (it) * | 2020-07-06 | 2022-01-06 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo semiconduttore in carburo di silicio con migliorate caratteristiche |
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US20170121850A1 (en) | 2017-05-04 |
CN106536793B (zh) | 2019-04-05 |
WO2016125404A1 (ja) | 2016-08-11 |
JPWO2016125404A1 (ja) | 2017-04-27 |
US10208400B2 (en) | 2019-02-19 |
DE112015002906T5 (de) | 2017-03-02 |
DE112015002906B4 (de) | 2022-12-22 |
JP6361747B2 (ja) | 2018-07-25 |
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