JP2014176290A5 - - Google Patents

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Publication number
JP2014176290A5
JP2014176290A5 JP2014021259A JP2014021259A JP2014176290A5 JP 2014176290 A5 JP2014176290 A5 JP 2014176290A5 JP 2014021259 A JP2014021259 A JP 2014021259A JP 2014021259 A JP2014021259 A JP 2014021259A JP 2014176290 A5 JP2014176290 A5 JP 2014176290A5
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JP
Japan
Prior art keywords
terminal
side transistor
charge storage
storage element
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014021259A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014176290A (ja
JP6300349B2 (ja
Filing date
Publication date
Priority claimed from US13/794,038 external-priority patent/US9070562B2/en
Application filed filed Critical
Publication of JP2014176290A publication Critical patent/JP2014176290A/ja
Publication of JP2014176290A5 publication Critical patent/JP2014176290A5/ja
Application granted granted Critical
Publication of JP6300349B2 publication Critical patent/JP6300349B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014021259A 2013-03-11 2014-02-06 スイッチング素子、整流素子、および電荷蓄積素子を含む回路 Active JP6300349B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/794,038 US9070562B2 (en) 2013-03-11 2013-03-11 Circuit including a switching element, a rectifying element, and a charge storage element
US13/794,038 2013-03-11

Publications (3)

Publication Number Publication Date
JP2014176290A JP2014176290A (ja) 2014-09-22
JP2014176290A5 true JP2014176290A5 (enExample) 2017-02-16
JP6300349B2 JP6300349B2 (ja) 2018-03-28

Family

ID=50190353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014021259A Active JP6300349B2 (ja) 2013-03-11 2014-02-06 スイッチング素子、整流素子、および電荷蓄積素子を含む回路

Country Status (6)

Country Link
US (1) US9070562B2 (enExample)
EP (1) EP2779453B1 (enExample)
JP (1) JP6300349B2 (enExample)
KR (1) KR102121719B1 (enExample)
CN (1) CN203911749U (enExample)
TW (1) TWI601380B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106469976B (zh) * 2015-08-20 2019-03-15 台达电子工业股份有限公司 变换器及电压箝位单元
US10153213B2 (en) 2015-08-27 2018-12-11 Semiconductor Components Industries, Llc Process of forming an electronic device including a drift region, a sinker region and a resurf region
US20170062410A1 (en) * 2015-08-31 2017-03-02 Semiconductor Components Industries, Llc Circuit including a rectifying element, an electronic device including a diode and a process of forming the same
US9680381B1 (en) 2016-01-29 2017-06-13 Semiconductor Components Industries, Llc Circuit including rectifying elements and a charge storage element and a method of using an electronic device including a circuit having switching elements
US10291052B2 (en) * 2016-05-25 2019-05-14 Fairchild Semiconductor Corporation Bypass charging circuit and method
US10116303B2 (en) 2016-07-01 2018-10-30 Toyota Motor Engineering & Manufacturing North America, Inc. Parallel devices having balanced switching current and power
CN110858723B (zh) * 2018-08-24 2025-10-10 瑞萨设计(英国)有限公司 用于电荷再循环的方法和装置

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