CN203911749U - 包括开关元件、整流元件和电荷存储元件的电路 - Google Patents
包括开关元件、整流元件和电荷存储元件的电路 Download PDFInfo
- Publication number
- CN203911749U CN203911749U CN201420082316.5U CN201420082316U CN203911749U CN 203911749 U CN203911749 U CN 203911749U CN 201420082316 U CN201420082316 U CN 201420082316U CN 203911749 U CN203911749 U CN 203911749U
- Authority
- CN
- China
- Prior art keywords
- terminal
- current
- electrode
- carrying electrode
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1588—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/538—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/794,038 US9070562B2 (en) | 2013-03-11 | 2013-03-11 | Circuit including a switching element, a rectifying element, and a charge storage element |
| US13/794,038 | 2013-03-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203911749U true CN203911749U (zh) | 2014-10-29 |
Family
ID=50190353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420082316.5U Expired - Fee Related CN203911749U (zh) | 2013-03-11 | 2014-02-26 | 包括开关元件、整流元件和电荷存储元件的电路 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9070562B2 (enExample) |
| EP (1) | EP2779453B1 (enExample) |
| JP (1) | JP6300349B2 (enExample) |
| KR (1) | KR102121719B1 (enExample) |
| CN (1) | CN203911749U (enExample) |
| TW (1) | TWI601380B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107437832A (zh) * | 2016-05-25 | 2017-12-05 | 快捷半导体有限公司 | 旁路充电电路和方法 |
| CN110858723A (zh) * | 2018-08-24 | 2020-03-03 | 戴洛格半导体(英国)有限公司 | 用于电荷再循环的方法和装置 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106469976B (zh) * | 2015-08-20 | 2019-03-15 | 台达电子工业股份有限公司 | 变换器及电压箝位单元 |
| US10153213B2 (en) | 2015-08-27 | 2018-12-11 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a drift region, a sinker region and a resurf region |
| US20170062410A1 (en) * | 2015-08-31 | 2017-03-02 | Semiconductor Components Industries, Llc | Circuit including a rectifying element, an electronic device including a diode and a process of forming the same |
| US9680381B1 (en) | 2016-01-29 | 2017-06-13 | Semiconductor Components Industries, Llc | Circuit including rectifying elements and a charge storage element and a method of using an electronic device including a circuit having switching elements |
| US10116303B2 (en) | 2016-07-01 | 2018-10-30 | Toyota Motor Engineering & Manufacturing North America, Inc. | Parallel devices having balanced switching current and power |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS58202623A (ja) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | トランジスタスイツチ回路 |
| US5966003A (en) * | 1997-05-15 | 1999-10-12 | Fujitsu Limited | DC-DC converter control circuit |
| US6617642B1 (en) | 2000-02-23 | 2003-09-09 | Tripath Technology, Inc. | Field effect transistor structure for driving inductive loads |
| JP4051875B2 (ja) * | 2000-10-31 | 2008-02-27 | 富士電機ホールディングス株式会社 | 整流回路及びその制御方法 |
| JP2002217416A (ja) | 2001-01-16 | 2002-08-02 | Hitachi Ltd | 半導体装置 |
| JP2002290224A (ja) | 2001-03-23 | 2002-10-04 | Tdk Corp | 半導体素子 |
| US6867553B2 (en) * | 2003-04-16 | 2005-03-15 | General Electric Company | Continuous mode voltage fed inverter |
| US6940189B2 (en) * | 2003-07-31 | 2005-09-06 | Andrew Roman Gizara | System and method for integrating a digital core with a switch mode power supply |
| JP4565879B2 (ja) * | 2004-04-19 | 2010-10-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2006049341A (ja) | 2004-07-30 | 2006-02-16 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP4075884B2 (ja) * | 2004-11-05 | 2008-04-16 | 株式会社デンソー | 電荷蓄積素子の電力制御回路 |
| US7462897B2 (en) * | 2005-01-31 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
| WO2007048196A1 (en) | 2005-10-26 | 2007-05-03 | Sf2 Infrastructure Limited | Mosfet circuits |
| US7495877B2 (en) * | 2006-03-26 | 2009-02-24 | Alpha & Omega Semiconductor, Ltd. | Circuit configuration and method to reduce ringing in the semiconductor power switching circuits |
| JP5186095B2 (ja) * | 2006-10-02 | 2013-04-17 | 株式会社日立製作所 | ゲート駆動回路 |
| TW200820166A (en) * | 2006-10-27 | 2008-05-01 | Beyond Innovation Tech Co Ltd | Driving device and switching circuit thereof |
| US8427235B2 (en) * | 2007-04-13 | 2013-04-23 | Advanced Analogic Technologies, Inc. | Power-MOSFETs with improved efficiency for multi-channel class-D audio amplifiers and packaging thereof |
| JP2009159184A (ja) * | 2007-12-26 | 2009-07-16 | Hitachi Ltd | フリーホイールダイオードとを有する回路装置、及び、ダイオードを用いた回路装置とそれを用いた電力変換器 |
| JP4557015B2 (ja) * | 2008-02-15 | 2010-10-06 | 株式会社デンソー | パワースイッチング回路 |
| US8026704B2 (en) * | 2008-06-06 | 2011-09-27 | Infineon Technologies Austria Ag | System and method for controlling a converter |
| JP5217849B2 (ja) * | 2008-09-29 | 2013-06-19 | サンケン電気株式会社 | 電気回路のスイッチング装置 |
| US8222695B2 (en) | 2009-06-30 | 2012-07-17 | Semiconductor Components Industries, Llc | Process of forming an electronic device including an integrated circuit with transistors coupled to each other |
| TW201105015A (en) * | 2009-07-22 | 2011-02-01 | Green Solution Tech Co Ltd | Charge pump circuit |
| US20110156682A1 (en) | 2009-12-30 | 2011-06-30 | Dev Alok Girdhar | Voltage converter with integrated schottky device and systems including same |
| JP2011152011A (ja) * | 2010-01-25 | 2011-08-04 | Renesas Electronics Corp | 半導体装置及びそれを用いた電源装置 |
| US8299560B2 (en) | 2010-02-08 | 2012-10-30 | Semiconductor Components Industries, Llc | Electronic device including a buried insulating layer and a vertical conductive structure extending therethrough and a process of forming the same |
| JP5525917B2 (ja) * | 2010-05-27 | 2014-06-18 | ローム株式会社 | 電子回路 |
| JP2012005249A (ja) * | 2010-06-17 | 2012-01-05 | Sanken Electric Co Ltd | スイッチング電源回路 |
| WO2012073571A1 (ja) * | 2010-12-01 | 2012-06-07 | 株式会社安川電機 | 電力変換装置 |
| US9166028B2 (en) * | 2011-05-31 | 2015-10-20 | Infineon Technologies Austria Ag | Circuit configured to adjust the activation state of transistors based on load conditions |
| JP5727300B2 (ja) * | 2011-05-31 | 2015-06-03 | トランスフォーム・ジャパン株式会社 | 電圧レギュレータ |
| US8570005B2 (en) * | 2011-09-12 | 2013-10-29 | Solaredge Technologies Ltd. | Direct current link circuit |
| JP5420711B2 (ja) * | 2012-04-18 | 2014-02-19 | 株式会社日立製作所 | フリーホイールダイオードを有する回路装置 |
| US9192424B2 (en) * | 2012-05-31 | 2015-11-24 | Covidien Lp | AC active load |
-
2013
- 2013-03-11 US US13/794,038 patent/US9070562B2/en active Active
-
2014
- 2014-02-05 TW TW103103832A patent/TWI601380B/zh active
- 2014-02-06 JP JP2014021259A patent/JP6300349B2/ja active Active
- 2014-02-26 CN CN201420082316.5U patent/CN203911749U/zh not_active Expired - Fee Related
- 2014-02-28 KR KR1020140023999A patent/KR102121719B1/ko active Active
- 2014-03-05 EP EP14157818.7A patent/EP2779453B1/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107437832A (zh) * | 2016-05-25 | 2017-12-05 | 快捷半导体有限公司 | 旁路充电电路和方法 |
| CN107437832B (zh) * | 2016-05-25 | 2022-04-15 | 快捷半导体有限公司 | 旁路充电电路和方法 |
| CN110858723A (zh) * | 2018-08-24 | 2020-03-03 | 戴洛格半导体(英国)有限公司 | 用于电荷再循环的方法和装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201503584A (zh) | 2015-01-16 |
| TWI601380B (zh) | 2017-10-01 |
| US20140252409A1 (en) | 2014-09-11 |
| JP2014176290A (ja) | 2014-09-22 |
| EP2779453A1 (en) | 2014-09-17 |
| US9070562B2 (en) | 2015-06-30 |
| EP2779453B1 (en) | 2018-08-22 |
| KR20140111594A (ko) | 2014-09-19 |
| JP6300349B2 (ja) | 2018-03-28 |
| KR102121719B1 (ko) | 2020-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141029 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |