JP2014120734A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP2014120734A JP2014120734A JP2012277224A JP2012277224A JP2014120734A JP 2014120734 A JP2014120734 A JP 2014120734A JP 2012277224 A JP2012277224 A JP 2012277224A JP 2012277224 A JP2012277224 A JP 2012277224A JP 2014120734 A JP2014120734 A JP 2014120734A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- resin case
- semiconductor module
- recess
- auxiliary terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 229920005989 resin Polymers 0.000 claims abstract description 94
- 239000011347 resin Substances 0.000 claims abstract description 94
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000003780 insertion Methods 0.000 description 13
- 230000037431 insertion Effects 0.000 description 13
- 230000000903 blocking effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011342 resin composition Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 241000135309 Processus Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49544—Deformation absorbing parts in the lead frame plane, e.g. meanderline shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】金属ベース基板20上に接着した絶縁配線基板21上に搭載した複数の半導体素子22と、該半導体素子22を収納する樹脂ケース26と、該樹脂ケース26表面平坦部24aの開口部28aから外部に導出する金属主端子24および補助端子25を備える半導体モジュールにおいて、前記樹脂ケース26上面に前記補助端子25を導出する開口部28bが周辺低部33に設けられ、前記前記中央の平坦高部32と前記補助端子25との間に該補助端子25を固定するコマ34を有する半導体モジュール。
【選択図】図1
Description
請求項6の発明においては、金属ベース基板上に接着した絶縁配線基板上に半導体素子と端子とを固着する工程と、前記半導体素子を収納し前記端子をその上面に設けた開口部から縦方向に外部に導出させる樹脂ケースを前記金属ベース基板上に接着する工程とを有する金属半導体モジュールの製造方法において、請求項1乃至4項記載の前記樹脂ケースを用い、前記端子を前記開口部から導出させた後、請求項1乃至4項記載の前記コマを、請求項1乃至4項記載の前記第二の凹部に該コマが前記端子に設けられた突起を前記樹脂ケースの第一の凹部に押し付けるよう挿入する半導体モジュールの製造方法とする。
この半導体モジュール200は、金属ベース基板20と、金属ベース基板20上に固着される絶縁配線基板21と、絶縁配線基板21上の所要に位置にはんだ固着される、IGBT,FWDなどの半導体素子22、主電流にかかわる主端子24および制御端子を含む補助端子25と、金属ベース基板20を底板として、この底板に嵌め合わせる寸法の下部開口部を有する樹脂ケース26などを備えている。
21 絶縁配線基板
22 半導体素子
23 アルミワイヤ
24 主端子
24a 主端子の先端部
25 補助端子
25a 突起
26 樹脂ケース
27 ナットグローブ
28a 主端子開口部
28b 補助端子開口部
29 挿入口
30 外部端子取り付け穴
31 ナット受け凹部
32 平坦高部
33 平坦低部
34 絶縁板
C1 コレクタ端子
E2 エミッタ端子
G1、G2 ゲート端子
E1、E2 エミッタ補助端子
100、200 半導体モジュール
Claims (6)
- 金属ベース基板上に接着した絶縁配線基板上に搭載した半導体素子と、該半導体素子を収納する樹脂ケースと、該樹脂ケースの上面から縦方向に外部に導出する端子を備える半導体モジュールにおいて、前記端子を外部に導出する開口部が前記樹脂ケース上面に設けられ、該端子の縦方向の移動を抑えるよう前記ケース内において該端子に設けられた突起と、該突起にはめ合う前記樹脂ケースの第一の凹部と、断面が三辺形乃至四辺形であって一面が前記端子に接する絶縁性のコマと、該コマが前記端子に設けられた突起を前記樹脂ケースの第一の凹部に押し付けるよう挿入された前記樹脂ケース上面に設けられた第二の凹部とを有することを特徴とする半導体モジュール。
- 前記コマは、前記端子に接する面と反対側の面がコマの断面が下に向かって小さくなるよう傾斜している傾斜面を有していて、前記コマの傾斜面に対応する前記樹脂ケースの面が前記コマの傾斜面に当接するよう傾斜していることを特徴とする請求項1記載の半導体モジュール。
- 前記コマが、前記端子に対応する位置に切り込みを備え、該切込みに補助端子をそれぞれ挿入する構成を有することを特徴とする請求項1乃至2に記載の半導体モジュール。
- さらに前記コマは前記コマの少なくとも二面に突起又は凹みを有していて、前記樹脂ケースは前記コマの前記少なくとも二面の前記突起又は前記凹みにそれぞれ対応する凹み又は突起を有することを特徴とする請求項1乃至3に記載の半導体モジュール。
- 前記コマが、前記第二の凹部に接着されていることを特徴とする請求項1乃至4記載の半導体モジュール。
- 金属ベース基板上に接着した絶縁配線基板上に半導体素子と端子とを固着する工程と、前記半導体素子を収納し前記端子をその上面に設けた開口部から縦方向に外部に導出させる樹脂ケースを前記金属ベース基板上に接着する工程とを有する金属半導体モジュールの製造方法において、請求項1乃至4項記載の前記樹脂ケースを用い、前記端子を前記開口部から導出させた後、請求項1乃至4項記載の前記コマを、請求項1乃至4項記載の前記第二の凹部に該コマが前記端子に設けられた突起を前記樹脂ケースの第一の凹部に押し付けるよう挿入することを特徴とする半導体モジュールの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012277224A JP6044321B2 (ja) | 2012-12-19 | 2012-12-19 | 半導体モジュール |
EP13195866.2A EP2747137B1 (en) | 2012-12-19 | 2013-12-05 | Semiconductor module |
CN201310689092.4A CN103887273B (zh) | 2012-12-19 | 2013-12-16 | 半导体模块 |
US14/109,233 US8975740B2 (en) | 2012-12-19 | 2013-12-17 | Semiconductor module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012277224A JP6044321B2 (ja) | 2012-12-19 | 2012-12-19 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014120734A true JP2014120734A (ja) | 2014-06-30 |
JP6044321B2 JP6044321B2 (ja) | 2016-12-14 |
Family
ID=49752998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012277224A Active JP6044321B2 (ja) | 2012-12-19 | 2012-12-19 | 半導体モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US8975740B2 (ja) |
EP (1) | EP2747137B1 (ja) |
JP (1) | JP6044321B2 (ja) |
CN (1) | CN103887273B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3038154A2 (en) | 2014-12-24 | 2016-06-29 | Hitachi Power Semiconductor Device, Ltd. | Semiconductor power module and power conversion apparatus using the same |
US11145634B2 (en) | 2017-07-21 | 2021-10-12 | Mitsubishi Electric Corporation | Power converter |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016047212A1 (ja) * | 2014-09-25 | 2016-03-31 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
DE112015001002B4 (de) | 2014-10-14 | 2023-08-10 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
JP6288301B2 (ja) | 2014-11-28 | 2018-03-14 | 日産自動車株式会社 | ハーフブリッジパワー半導体モジュール及びその製造方法 |
US10396057B2 (en) * | 2015-02-13 | 2019-08-27 | Nissan Arc, Ltd. | Half-bridge power semiconductor module and method for manufacturing same |
DE102015103068B4 (de) | 2015-03-03 | 2019-05-02 | Infineon Technologies Bipolar Gmbh & Co. Kg | Leistungshalbleitermodul mit verbesserter mechanischer Abstützung des Steueranschlusselements und zugehörigers Montageverfahren |
US10629513B2 (en) * | 2015-06-04 | 2020-04-21 | Eaton Intelligent Power Limited | Ceramic plated materials for electrical isolation and thermal transfer |
JP6578795B2 (ja) * | 2015-08-04 | 2019-09-25 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
RU172194U1 (ru) * | 2016-12-29 | 2017-06-30 | Закрытое акционерное общество "Инновационная фирма "ИРСЭТ-Центр" | Светоизлучающий модуль |
CN109417068B (zh) * | 2017-01-17 | 2022-05-06 | 富士电机株式会社 | 半导体装置 |
CN110915313B (zh) * | 2017-06-07 | 2021-03-09 | Abb电网瑞士股份公司 | 功率半导体模块 |
FR3076175B1 (fr) * | 2017-12-22 | 2020-01-10 | Valeo Siemens Eautomotive France Sas | Equipement electrique a paroi deportee |
JP7275493B2 (ja) * | 2018-08-07 | 2023-05-18 | 富士電機株式会社 | 半導体装置 |
JP7238565B2 (ja) * | 2019-04-12 | 2023-03-14 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
EP3797962A1 (de) * | 2019-09-30 | 2021-03-31 | Siemens Aktiengesellschaft | Gehäuse eines elektronikmoduls und dessen herstellung |
CN111341764B (zh) * | 2020-03-12 | 2022-03-15 | 西安石油大学 | 一种绝缘栅双极晶闸管模块及电极功率端子 |
CN117954399B (zh) * | 2024-03-26 | 2024-06-25 | 淄博美林电子有限公司 | 一种高耐温度的IGBT、SiC混合功率模块 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01302753A (ja) * | 1988-05-30 | 1989-12-06 | Sansha Electric Mfg Co Ltd | 樹脂封止型半導体装置 |
JPH087956A (ja) * | 1994-06-23 | 1996-01-12 | Fuji Electric Co Ltd | 半導体装置の端子組立構造 |
JPH08162582A (ja) * | 1994-12-02 | 1996-06-21 | Mitsubishi Electric Corp | 半導体装置 |
JP2003068979A (ja) * | 2001-08-28 | 2003-03-07 | Hitachi Ltd | 半導体装置 |
US20080217756A1 (en) * | 2007-03-06 | 2008-09-11 | Infineon Technologies Ag | Power semiconductor arrangement and method for producing it |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH056852A (ja) | 1991-06-27 | 1993-01-14 | Fujitsu Ltd | X線照射装置及びx線照射方法 |
DE50013161D1 (de) | 1999-03-17 | 2006-08-24 | Eupec Gmbh & Co Kg | Leistungshalbleitermodul |
DE10100460B4 (de) * | 2001-01-08 | 2006-06-01 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Gehäuse und Anschlußelementen |
DE10258570B4 (de) * | 2002-12-14 | 2005-11-03 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
JP2005142189A (ja) * | 2003-11-04 | 2005-06-02 | Toyota Industries Corp | 半導体装置 |
JP5028085B2 (ja) * | 2006-12-27 | 2012-09-19 | アイシン・エィ・ダブリュ株式会社 | 電子回路装置とその製造方法 |
JP4093319B1 (ja) * | 2007-03-01 | 2008-06-04 | クオリティ株式会社 | 避難誘導システム |
JP5272768B2 (ja) * | 2009-02-05 | 2013-08-28 | 三菱電機株式会社 | 電力用半導体装置とその製造方法 |
JP5643752B2 (ja) * | 2009-05-14 | 2014-12-17 | ローム株式会社 | 半導体装置 |
JP2012005301A (ja) * | 2010-06-18 | 2012-01-05 | Fuji Electric Co Ltd | パワー半導体モジュール |
AU2011279557B2 (en) | 2010-07-16 | 2018-09-27 | Verita Research Pte Ltd | Pharmaceutical compositions for sustained delivery of benzodiazepine antagonists |
EP2725610B1 (en) * | 2011-09-28 | 2020-06-03 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing semiconductor device |
-
2012
- 2012-12-19 JP JP2012277224A patent/JP6044321B2/ja active Active
-
2013
- 2013-12-05 EP EP13195866.2A patent/EP2747137B1/en active Active
- 2013-12-16 CN CN201310689092.4A patent/CN103887273B/zh active Active
- 2013-12-17 US US14/109,233 patent/US8975740B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01302753A (ja) * | 1988-05-30 | 1989-12-06 | Sansha Electric Mfg Co Ltd | 樹脂封止型半導体装置 |
JPH087956A (ja) * | 1994-06-23 | 1996-01-12 | Fuji Electric Co Ltd | 半導体装置の端子組立構造 |
JPH08162582A (ja) * | 1994-12-02 | 1996-06-21 | Mitsubishi Electric Corp | 半導体装置 |
JP2003068979A (ja) * | 2001-08-28 | 2003-03-07 | Hitachi Ltd | 半導体装置 |
US20080217756A1 (en) * | 2007-03-06 | 2008-09-11 | Infineon Technologies Ag | Power semiconductor arrangement and method for producing it |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3038154A2 (en) | 2014-12-24 | 2016-06-29 | Hitachi Power Semiconductor Device, Ltd. | Semiconductor power module and power conversion apparatus using the same |
US10374414B2 (en) | 2014-12-24 | 2019-08-06 | Hitachi Power Semiconductor Device, Ltd. | Semiconductor power module and power conversion apparatus using the same |
US11145634B2 (en) | 2017-07-21 | 2021-10-12 | Mitsubishi Electric Corporation | Power converter |
Also Published As
Publication number | Publication date |
---|---|
US8975740B2 (en) | 2015-03-10 |
CN103887273B (zh) | 2018-04-24 |
JP6044321B2 (ja) | 2016-12-14 |
CN103887273A (zh) | 2014-06-25 |
US20140167235A1 (en) | 2014-06-19 |
EP2747137B1 (en) | 2019-09-25 |
EP2747137A1 (en) | 2014-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6044321B2 (ja) | 半導体モジュール | |
US9966327B2 (en) | Lead frame, semiconductor device, method for manufacturing lead frame, and method for manufacturing semiconductor device | |
JP6004001B2 (ja) | 半導体装置 | |
US9263381B2 (en) | Semiconductor module and method for manufacturing the same | |
KR100950378B1 (ko) | 반도체 장치와 패키징 구조체 | |
US10637168B2 (en) | Semiconductor device and semiconductor device manufacturing method | |
JP2015056638A (ja) | 半導体装置およびその製造方法 | |
JP2012199436A (ja) | 半導体装置及びその製造方法 | |
JP5935374B2 (ja) | 半導体モジュールの製造方法 | |
JP2006108306A (ja) | リードフレームおよびそれを用いた半導体パッケージ | |
JP2014154736A (ja) | 半導体装置 | |
JP2018157070A (ja) | 半導体装置 | |
KR101983165B1 (ko) | 반도체 패키지 | |
US9318423B2 (en) | Leadless package type power semiconductor module | |
JP2013143519A (ja) | 接続子および樹脂封止型半導体装置 | |
JP2015041684A (ja) | 半導体装置の製造方法、半導体装置及びリードフレーム | |
WO2020129273A1 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2010010567A (ja) | 半導体装置およびその製造方法 | |
WO2023139687A1 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2016197636A (ja) | モールドパッケージ | |
TW202238888A (zh) | 半導體裝置 | |
JP4246598B2 (ja) | 電力用半導体装置 | |
JP2020113611A (ja) | 半導体装置およびその製造方法 | |
JP2012099773A (ja) | 半導体モジュールの製造方法、及び半導体モジュール | |
JP2003077945A (ja) | 樹脂封止型半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20151005 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20151005 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151014 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160725 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160728 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161018 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161031 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6044321 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |