JP2014103389A5 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- JP2014103389A5 JP2014103389A5 JP2013219871A JP2013219871A JP2014103389A5 JP 2014103389 A5 JP2014103389 A5 JP 2014103389A5 JP 2013219871 A JP2013219871 A JP 2013219871A JP 2013219871 A JP2013219871 A JP 2013219871A JP 2014103389 A5 JP2014103389 A5 JP 2014103389A5
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- Prior art keywords
- oxide
- film
- semiconductor device
- insulating film
- conduction band
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- 239000004065 semiconductor Substances 0.000 title claims 12
- 229910052733 gallium Inorganic materials 0.000 claims 6
- 229910052738 indium Inorganic materials 0.000 claims 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 238000000691 measurement method Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Claims (5)
前記ゲート電極を覆うゲート絶縁膜と、
前記ゲート絶縁膜を介して前記ゲート電極と重なる多層膜と、
前記多層膜に接する一対の電極と、を有するトランジスタと、
前記ゲート絶縁膜、前記多層膜、及び前記一対の電極を覆う酸化物絶縁膜と、を備え、
前記多層膜は、酸化物半導体膜及びＩｎ若しくはＧａを含む酸化物膜を有し、
前記酸化物絶縁膜は、化学量論的組成を満たす酸素よりも多くの酸素を含む酸化物絶縁膜であり、
前記Ｉｎ若しくはＧａを含む酸化物膜の伝導帯の下端のエネルギー準位が、前記酸化物半導体膜の伝導帯の下端のエネルギー準位よりも真空準位に近いことを特徴とする半導体装置。 A gate electrode formed on the substrate;
A gate insulating film covering the gate electrode;
A multilayer film overlapping the gate electrode via the gate insulating film;
A transistor having a pair of electrodes in contact with the multilayer film;
An oxide insulating film covering the gate insulating film, the multilayer film, and the pair of electrodes,
The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga.
The oxide insulating film is an oxide insulating film containing more oxygen than oxygen that satisfies the stoichiometric composition,
A semiconductor device, wherein an energy level at a lower end of a conduction band of the oxide film containing In or Ga is closer to a vacuum level than an energy level at a lower end of the conduction band of the oxide semiconductor film .
前記酸化物半導体膜は、Ｉｎ若しくはＧａを含むことを特徴とする半導体装置。 In claim 1,
The semiconductor device, wherein the oxide semiconductor film contains In or Ga.
前記Ｉｎ若しくはＧａを含む酸化物膜の伝導帯の下端のエネルギー準位と、前記酸化物半導体膜の伝導帯の下端のエネルギー準位との差は０．０５ｅＶ以上２ｅＶ以下であることを特徴とする半導体装置。 In claim 1 or 2 ,
The difference between the energy level at the lower end of the conduction band of the oxide film containing In or Ga and the energy level at the lower end of the conduction band of the oxide semiconductor film is 0.05 eV or more and 2 eV or less. Semiconductor device.
前記酸化物半導体膜及び前記Ｉｎ若しくはＧａを含む酸化物膜が、Ｉｎ−Ｍ−Ｚｎ酸化物（ＭはＡｌ、Ｔｉ、Ｇａ、Ｙ、Ｚｒ、Ｌａ、Ｃｅ、Ｎｄ、又はＨｆ）であり、
前記酸化物半導体膜と比較して、前記Ｉｎ若しくはＧａを含む酸化物膜に含まれる前記Ｍの原子数比が大きいことを特徴とする半導体装置。 Any one to Oite of claims 1 to 3,
The oxide semiconductor film and the oxide film containing In or Ga are In-M-Zn oxide (M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf);
The semiconductor device is characterized in that the atomic ratio of M contained in the oxide film containing In or Ga is larger than that in the oxide semiconductor film.
前記多層膜は、エネルギーが１．５ｅＶ以上２．３ｅＶ以下の範囲において、一定光電流測定法で導出された吸収係数が、１×１０−３／ｃｍ未満であることを特徴とする半導体装置。 In any one of Claims 1 thru | or 4 ,
The semiconductor device according to claim 1, wherein the multilayer film has an absorption coefficient derived by a constant photocurrent measurement method of less than 1 × 10 −3 / cm in an energy range of 1.5 eV to 2.3 eV.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013219871A JP6266297B2 (en) | 2012-10-24 | 2013-10-23 | Semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012234616 | 2012-10-24 | ||
| JP2012234616 | 2012-10-24 | ||
| JP2013219871A JP6266297B2 (en) | 2012-10-24 | 2013-10-23 | Semiconductor device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017043400A Division JP6145237B2 (en) | 2012-10-24 | 2017-03-08 | Transistor and manufacturing method thereof |
| JP2017243987A Division JP6630336B2 (en) | 2012-10-24 | 2017-12-20 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014103389A JP2014103389A (en) | 2014-06-05 |
| JP2014103389A5 true JP2014103389A5 (en) | 2016-11-10 |
| JP6266297B2 JP6266297B2 (en) | 2018-01-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2013219871A Expired - Fee Related JP6266297B2 (en) | 2012-10-24 | 2013-10-23 | Semiconductor device |
| JP2017043400A Active JP6145237B2 (en) | 2012-10-24 | 2017-03-08 | Transistor and manufacturing method thereof |
| JP2017243987A Active JP6630336B2 (en) | 2012-10-24 | 2017-12-20 | Semiconductor device |
| JP2019221354A Active JP6832414B2 (en) | 2012-10-24 | 2019-12-06 | Transistor |
| JP2021014484A Active JP7022852B2 (en) | 2012-10-24 | 2021-02-01 | Display device |
| JP2022016832A Active JP7390416B2 (en) | 2012-10-24 | 2022-02-07 | semiconductor equipment |
| JP2023196483A Pending JP2024022597A (en) | 2012-10-24 | 2023-11-20 | semiconductor equipment |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2017043400A Active JP6145237B2 (en) | 2012-10-24 | 2017-03-08 | Transistor and manufacturing method thereof |
| JP2017243987A Active JP6630336B2 (en) | 2012-10-24 | 2017-12-20 | Semiconductor device |
| JP2019221354A Active JP6832414B2 (en) | 2012-10-24 | 2019-12-06 | Transistor |
| JP2021014484A Active JP7022852B2 (en) | 2012-10-24 | 2021-02-01 | Display device |
| JP2022016832A Active JP7390416B2 (en) | 2012-10-24 | 2022-02-07 | semiconductor equipment |
| JP2023196483A Pending JP2024022597A (en) | 2012-10-24 | 2023-11-20 | semiconductor equipment |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US9530892B2 (en) |
| JP (7) | JP6266297B2 (en) |
| KR (2) | KR102279459B1 (en) |
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