JP2014103389A5 - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
JP2014103389A5
JP2014103389A5 JP2013219871A JP2013219871A JP2014103389A5 JP 2014103389 A5 JP2014103389 A5 JP 2014103389A5 JP 2013219871 A JP2013219871 A JP 2013219871A JP 2013219871 A JP2013219871 A JP 2013219871A JP 2014103389 A5 JP2014103389 A5 JP 2014103389A5
Authority
JP
Japan
Prior art keywords
film
oxide
semiconductor
insulating film
conduction band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013219871A
Other languages
Japanese (ja)
Other versions
JP2014103389A (en
JP6266297B2 (en
Filing date
Publication date
Priority to JP2012234616 priority Critical
Priority to JP2012234616 priority
Application filed filed Critical
Priority to JP2013219871A priority patent/JP6266297B2/en
Priority claimed from JP2013219871A external-priority patent/JP6266297B2/en
Publication of JP2014103389A publication Critical patent/JP2014103389A/en
Publication of JP2014103389A5 publication Critical patent/JP2014103389A5/en
Application granted granted Critical
Publication of JP6266297B2 publication Critical patent/JP6266297B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (5)

  1. A gate electrode formed on the substrate;
    A gate insulating film covering the gate electrode;
    A multilayer film overlapping the gate electrode via the gate insulating film;
    A transistor having a pair of electrodes in contact with the multilayer film;
    An oxide insulating film covering the gate insulating film, the multilayer film, and the pair of electrodes,
    The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga.
    The oxide insulating film is an oxide insulating film containing more oxygen than oxygen that satisfies the stoichiometric composition,
    A semiconductor device, wherein an energy level at a lower end of a conduction band of the oxide film containing In or Ga is closer to a vacuum level than an energy level at a lower end of the conduction band of the oxide semiconductor film .
  2. In claim 1,
    The semiconductor device, wherein the oxide semiconductor film contains In or Ga.
  3. In claim 1 or 2 ,
    The difference between the energy level at the lower end of the conduction band of the oxide film containing In or Ga and the energy level at the lower end of the conduction band of the oxide semiconductor film is 0.05 eV or more and 2 eV or less. Semiconductor device.
  4. Any one to Oite of claims 1 to 3,
    The oxide semiconductor film and the oxide film containing In or Ga are In-M-Zn oxide (M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf);
    The semiconductor device is characterized in that the atomic ratio of M contained in the oxide film containing In or Ga is larger than that in the oxide semiconductor film.
  5. In any one of Claims 1 thru | or 4 ,
    The semiconductor device according to claim 1, wherein the multilayer film has an absorption coefficient derived by a constant photocurrent measurement method of less than 1 × 10 −3 / cm in an energy range of 1.5 eV to 2.3 eV.
JP2013219871A 2012-10-24 2013-10-23 Semiconductor device Active JP6266297B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012234616 2012-10-24
JP2012234616 2012-10-24
JP2013219871A JP6266297B2 (en) 2012-10-24 2013-10-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013219871A JP6266297B2 (en) 2012-10-24 2013-10-23 Semiconductor device

Publications (3)

Publication Number Publication Date
JP2014103389A JP2014103389A (en) 2014-06-05
JP2014103389A5 true JP2014103389A5 (en) 2016-11-10
JP6266297B2 JP6266297B2 (en) 2018-01-24

Family

ID=50484545

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2013219871A Active JP6266297B2 (en) 2012-10-24 2013-10-23 Semiconductor device
JP2017043400A Active JP6145237B2 (en) 2012-10-24 2017-03-08 Transistor and manufacturing method thereof
JP2017243987A Active JP6630336B2 (en) 2012-10-24 2017-12-20 Semiconductor device
JP2019221354A Pending JP2020043367A (en) 2012-10-24 2019-12-06 Transistor

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2017043400A Active JP6145237B2 (en) 2012-10-24 2017-03-08 Transistor and manufacturing method thereof
JP2017243987A Active JP6630336B2 (en) 2012-10-24 2017-12-20 Semiconductor device
JP2019221354A Pending JP2020043367A (en) 2012-10-24 2019-12-06 Transistor

Country Status (3)

Country Link
US (2) US9530892B2 (en)
JP (4) JP6266297B2 (en)
KR (1) KR20140052870A (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140052870A (en) * 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
TWI691084B (en) 2012-10-24 2020-04-11 日商半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US9287411B2 (en) 2012-10-24 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (en) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI505164B (en) * 2013-09-26 2015-10-21 Ye Xin Technology Consulting Co Ltd Touch device
WO2015083034A1 (en) * 2013-12-02 2015-06-11 Semiconductor Energy Laboratory Co., Ltd. Display device
TW201933615A (en) 2013-12-19 2019-08-16 日商半導體能源研究所股份有限公司 Semiconductor device
US9564535B2 (en) * 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
JP6537341B2 (en) 2014-05-07 2019-07-03 株式会社半導体エネルギー研究所 Semiconductor device
TWI663726B (en) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
WO2016009310A1 (en) 2014-07-15 2016-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
KR20160087469A (en) * 2015-01-13 2016-07-22 삼성디스플레이 주식회사 Thin film transistor array panel and method for manufacturing the same
KR20160114511A (en) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2016189414A1 (en) 2015-05-22 2016-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US20170205909A1 (en) * 2016-01-19 2017-07-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Touch Panel and Method of Fabricating the Same
KR20180123028A (en) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor equipment, a method of manufacturing the semiconductor device, and a display device including the semiconductor device
TW201813094A (en) * 2016-06-27 2018-04-01 半導體能源硏究所股份有限公司 Transistor and semiconductor device
WO2018011648A1 (en) * 2016-07-11 2018-01-18 株式会社半導体エネルギー研究所 Metal oxide, and semiconductor device having said metal oxide

Family Cites Families (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (en) 1984-03-23 1985-10-08 Fujitsu Ltd Thin film transistor
JPH0244256B2 (en) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244259B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho
JPH0244258B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (en) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (en) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (en) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JP3298974B2 (en) 1993-03-23 2002-07-08 電子科学株式会社 Thermal desorption gas analyzer
JP3479375B2 (en) 1995-03-27 2003-12-15 科学技術振興事業団 Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (en) 1995-12-30 2005-03-02 三星電子株式会社 Manufacturing method of liquid crystal display device
JP4170454B2 (en) 1998-07-24 2008-10-22 Hoya株式会社 Article having transparent conductive oxide thin film and method for producing the same
JP2000150861A (en) 1998-11-16 2000-05-30 Hiroshi Kawazoe Oxide thin film
JP3276930B2 (en) 1998-11-17 2002-04-22 科学技術振興事業団 Transistor and semiconductor device
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (en) 2000-09-01 2008-05-28 国立大学法人東北大学 Semiconductor device
KR20020038482A (en) 2000-11-15 2002-05-23 모리시타 요이찌 Thin film transistor array, method for producing the same, and display panel using the same
JP3997731B2 (en) 2001-03-19 2007-10-24 富士ゼロックス株式会社 Method for forming a crystalline semiconductor thin film on a substrate
JP2002289859A (en) 2001-03-23 2002-10-04 Minolta Co Ltd Thin-film transistor
JP4090716B2 (en) 2001-09-10 2008-05-28 シャープ株式会社 Thin film transistor and matrix display device
JP3925839B2 (en) 2001-09-10 2007-06-06 シャープ株式会社 Semiconductor memory device and test method thereof
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (en) 2002-02-21 2008-04-30 裕道 太田 Method for producing LnCuO (S, Se, Te) single crystal thin film
CN1445821A (en) 2002-03-15 2003-10-01 三洋电机株式会社 Forming method of ZnO film and ZnO semiconductor layer, semiconductor element and manufacturing method thereof
JP3933591B2 (en) 2002-03-26 2007-06-20 三菱重工業株式会社 Organic electroluminescent device
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (en) 2002-06-13 2004-01-22 Murata Mfg Co Ltd Manufacturing method of semiconductor device and its manufacturing method
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP4164562B2 (en) 2002-09-11 2008-10-15 Hoya株式会社 Transparent thin film field effect transistor using homologous thin film as active layer
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (en) 2003-03-06 2008-10-15 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP2004273732A (en) 2003-03-07 2004-09-30 Masashi Kawasaki Active matrix substrate and its producing process
JP4108633B2 (en) 2003-06-20 2008-06-25 シャープ株式会社 Thin film transistor, manufacturing method thereof, and electronic device
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
JP4620046B2 (en) 2004-03-12 2011-01-26 独立行政法人科学技術振興機構 Thin film transistor and manufacturing method thereof
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (en) 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin-film transistor and its manufacturing method
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
WO2006051994A2 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Light-emitting device
JP5118812B2 (en) 2004-11-10 2013-01-16 キヤノン株式会社 Field effect transistor
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
WO2006051993A2 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI562380B (en) 2005-01-28 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI390735B (en) 2005-01-28 2013-03-21 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (en) 2005-06-10 2006-12-21 Casio Comput Co Ltd Thin film transistor
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (en) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 Organic Light Emitting Display and Fabrication Method for the same
JP2007059128A (en) 2005-08-23 2007-03-08 Canon Inc Organic electroluminescent display device and manufacturing method thereof
JP4850457B2 (en) 2005-09-06 2012-01-11 キヤノン株式会社 Thin film transistor and thin film diode
JP2007073705A (en) 2005-09-06 2007-03-22 Canon Inc Oxide-semiconductor channel film transistor and its method of manufacturing same
JP5116225B2 (en) 2005-09-06 2013-01-09 キヤノン株式会社 Manufacturing method of oxide semiconductor device
JP4280736B2 (en) 2005-09-06 2009-06-17 キヤノン株式会社 Semiconductor element
EP1770788A3 (en) 2005-09-29 2011-09-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5064747B2 (en) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device
JP5078246B2 (en) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP5037808B2 (en) 2005-10-20 2012-10-03 キヤノン株式会社 Field effect transistor using amorphous oxide, and display device using the transistor
KR101117948B1 (en) 2005-11-15 2012-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of Manufacturing a Liquid Crystal Display Device
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (en) 2006-01-21 2012-07-18 三星電子株式会社Samsung Electronics Co.,Ltd. ZnO film and method of manufacturing TFT using the same
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (en) 2006-04-11 2007-10-17 삼성전자주식회사 Zno thin film transistor
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (en) 2006-06-13 2012-09-19 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4999400B2 (en) 2006-08-09 2012-08-15 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4609797B2 (en) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 Thin film device and manufacturing method thereof
JP4332545B2 (en) 2006-09-15 2009-09-16 キヤノン株式会社 Field effect transistor and manufacturing method thereof
JP5164357B2 (en) 2006-09-27 2013-03-21 キヤノン株式会社 Semiconductor device and manufacturing method of semiconductor device
JP4274219B2 (en) 2006-09-27 2009-06-03 セイコーエプソン株式会社 Electronic devices, organic electroluminescence devices, organic thin film semiconductor devices
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (en) 2006-12-04 2008-06-19 Toppan Printing Co Ltd Color el display, and its manufacturing method
KR101303578B1 (en) 2007-01-05 2013-09-09 삼성전자주식회사 Etching method of thin film
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP5121254B2 (en) 2007-02-28 2013-01-16 キヤノン株式会社 Thin film transistor and display device
KR100851215B1 (en) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 Thin film transistor and organic light-emitting dislplay device having the thin film transistor
JP2008276212A (en) 2007-04-05 2008-11-13 Fujifilm Corp Organic electroluminescent display device
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (en) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 Thin film transistor substrate and manufacturing method thereof
KR20080094300A (en) 2007-04-19 2008-10-23 삼성전자주식회사 Thin film transistor and method of manufacturing the same and flat panel display comprising the same
KR101334181B1 (en) 2007-04-20 2013-11-28 삼성전자주식회사 Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (en) 2007-05-29 2013-12-24 삼성전자주식회사 Fabrication method of ZnO family Thin film transistor
JP5215158B2 (en) 2007-12-17 2013-06-19 富士フイルム株式会社 Inorganic crystalline alignment film, method for manufacturing the same, and semiconductor device
JP4555358B2 (en) * 2008-03-24 2010-09-29 富士フイルム株式会社 Thin film field effect transistor and display device
KR100963026B1 (en) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor
JP2010040552A (en) 2008-07-31 2010-02-18 Idemitsu Kosan Co Ltd Thin film transistor and manufacturing method thereof
JP4623179B2 (en) 2008-09-18 2011-02-02 ソニー株式会社 Thin film transistor and manufacturing method thereof
JP5451280B2 (en) 2008-10-09 2014-03-26 キヤノン株式会社 Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device
WO2011027467A1 (en) * 2009-09-04 2011-03-10 株式会社 東芝 Thin-film transistor and method for manufacturing the thin-film transistor
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5497417B2 (en) * 2009-12-10 2014-05-21 富士フイルム株式会社 Thin film transistor, manufacturing method thereof, and apparatus having the thin film transistor
JP2011138934A (en) * 2009-12-28 2011-07-14 Sony Corp Thin film transistor, display device, and electronic equipment
CN102782859B (en) 2010-02-26 2015-07-29 株式会社半导体能源研究所 The manufacture method of semiconductor device
KR20130014562A (en) 2010-04-02 2013-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
JP5797449B2 (en) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 Semiconductor device evaluation method
KR101806271B1 (en) * 2010-05-14 2017-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101938726B1 (en) * 2010-06-11 2019-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
TWI615920B (en) * 2010-08-06 2018-02-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US8759820B2 (en) * 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5626978B2 (en) * 2010-09-08 2014-11-19 富士フイルム株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND APPARATUS HAVING THE THIN FILM TRANSISTOR
JP6010291B2 (en) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 Driving method of display device
JP5723262B2 (en) * 2010-12-02 2015-05-27 株式会社神戸製鋼所 Thin film transistor and sputtering target
CN103500712B (en) 2010-12-03 2016-05-25 株式会社半导体能源研究所 Semiconductor device
US8916867B2 (en) * 2011-01-20 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor element and semiconductor device
JP2012160679A (en) * 2011-02-03 2012-08-23 Sony Corp Thin-film transistor, display device, and electronic apparatus
US8625085B2 (en) * 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
TWI541904B (en) 2011-03-11 2016-07-11 半導體能源研究所股份有限公司 Method of manufacturing semiconductor device
TWI602334B (en) 2011-05-13 2017-10-11 半導體能源研究所股份有限公司 Light-emitting element and light-emitting device
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
JP5972065B2 (en) 2012-06-20 2016-08-17 富士フイルム株式会社 Thin film transistor manufacturing method
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20140052870A (en) * 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same

Similar Documents

Publication Publication Date Title
JP2014063141A5 (en) Method for manufacturing semiconductor device
ES1143133Y (en) Dermabrasion device
JP2014029994A5 (en) Method for manufacturing semiconductor device
SG11201604650SA (en) Semiconductor device
JP2014135478A5 (en) Method for manufacturing semiconductor device
JP2014007381A5 (en) Method for manufacturing semiconductor device
SG10201601511RA (en) Semiconductor device
JP2013175710A5 (en) Method for manufacturing semiconductor device
EP2942816A4 (en) Semiconductor device
DK2979361T3 (en) Intelligent gatedrive device
JP2014060705A5 (en) Imaging device
JP2014007393A5 (en) Method for manufacturing semiconductor device
JP2014007388A5 (en) Method for manufacturing semiconductor device
JP2013038400A5 (en) Semiconductor device
JP2013038399A5 (en) Semiconductor device
RU2015145289A (en) Semiconductor memory device
JP2012257236A5 (en) Semiconductor device
JP2014199896A5 (en) Method for manufacturing semiconductor device
JP2013137532A5 (en) Semiconductor device
JP2012169605A5 (en) semiconductor device
JP2012257200A5 (en) Semiconductor device
JP2014199905A5 (en) Method for manufacturing semiconductor device
JP2014075580A5 (en) Semiconductor device
JP2014057056A5 (en) Semiconductor device
RU2016116103A (en) Manual device