JP2014039053A - 蛍光体変換半導体発光デバイス - Google Patents
蛍光体変換半導体発光デバイス Download PDFInfo
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Abstract
【解決手段】蛍光体変換発光デバイスが、n型領域とp型領域との間に配置され第1のピーク波長を有する光を発するように構成された発光層と、第2のピーク波長を有する光を発するように構成された第1の蛍光体と、第3のピーク波長を有する光を発するように構成された第2の蛍光体と、を具備する。第2の蛍光体は、298K及び1.013barにおける励起スペクトルにおいて、460nmと470nmとの間の波長領域における最大強度が、220nmと320nmとの間の波長領域における最大強度の少なくとも5%であるように構成された、Eu3+により活性化される蛍光体である。
【選択図】図13
Description
図3及び図4は、LaOCl:Euの励起及び発光スペクトルを示す。図3において、460nmと470nmとの間の波長領域における最大強度は、220nmと320nmとの間の波長領域における最大強度の約21%である。図4において、680nmと720nmとの間の波長領域におけるピーク領域は、570nmと720nmとの間の波長領域におけるピーク領域の22%である。
図5及び図6は、Sr3In2Ge3O12:Euの励起及び発光スペクトルを示す。図5において、460nmと470nmとの間の波長領域における最大強度は、220nmと320nmとの間の波長領域における最大強度の約25%である。図6において、680nmと720nmとの間の波長領域におけるピーク領域は、570nmと720nmとの間の波長領域におけるピーク領域の25%である。
図7及び図8は、Y2SiO5:Euの励起及び発光スペクトルを示す。図7において、460nmと470nmとの間の波長領域における最大強度は、220nmと320nmとの間の波長領域における最大強度の約11%である。図8において、680nmと720nmとの間の波長領域におけるピーク領域は、570nmと720nmとの間の波長領域におけるピーク領域の21%である。
図9及び図10は、Ca3Ga2Ge3O12:Euの励起及び発光スペクトルを示す。図9において、460nmと470nmとの間の波長領域における最大強度は、220nmと320nmとの間の波長領域における最大強度の約11%である。図10において、680nmと720nmとの間の波長領域におけるピーク領域は、570nmと720nmとの間の波長領域におけるピーク領域の27%である。
図11は、本発明の1つの実施の形態に係る発光スペクトルを示す。LEDは次のようにして製造された。20%の(Y,Gd)3Al5O12:Ceと80%のY2SiO5:Euとの粉末混合物が、液体シリコーン前駆体化合物(precursor compound)内において懸濁された。このシリコーン前駆体の滴が、波長465nmの光を発するLEDダイの上に配置され、この後、シリコーンを重合させた。次に、LEDがプラスチックレンズを用いて封じられた。図11が示すように、この結果得られたLEDが3000KというTcを有する良好な光学的特性を示している。
図12は、本発明の1つの実施の形態に係るLEDの発光スペクトルを示す。LEDは、次のようにして作製された。20%の(Y,Gd)3Al5O12:Ceと80%のLaOCl:Euとの粉末混合物が、液体シリコーン前駆体化合物内において懸濁された。このシリコーン前駆体の滴が、波長465nmの光を発するLEDダイの上に配置され、この後、シリコーンを重合させた。次に、LEDがプラスチックレンズを用いて封じられた。図12が示すように、この結果得られたLEDが3100KというTcを有する良好な光学的特性を示している。
本発明に係るEuを含む材料のスペクトルは、構内構築スペクトル分光螢光計を用いて測定された。この分光蛍光計システムの光源は、空冷ハウジング内の150Wキセノン(Xe)ランプである。ランプ出力は、0.5mの焦点距離を用いて励起モノクロメータ(ベンサム)の入射スリットに、その焦点が合わせられた。この励起モノクロメータの出射スリットから出る光は、サンプルチャンバ内に送られ、その焦点がいくつかのミラーを介して試験対象となるサンプル材料に合わせられる。試験対象となるサンプルは、水平方向に配向されるが、励起及び発光ブランチの光学軸は、垂直方向に配向され、かつ、ほぼ平行である。この幾何学的配向が、様々なサンプルについての信頼性のある定量的な比較測定を確実なものとする。サンプルチャンバは、ミラーシステムを介して、発光モノクロメータ(ベンサム、焦点距離0.5m)に対して光学的に結合される。発せられた光の検出は、発光モノクロメータの出射スリットに搭載された熱電気冷却型の(thermo-electrically cooled)光電子増倍管(PMT)ユニットを用いて行われる。このシステムは、全体的に、DOSに基づいた構内開発型ソフトウェアプログラムによってコンピュータにより制御される。
12 マウント
14、16 金属相互接続
18 半導体構造
22 ルミネッセンスセラミック
24 第2の蛍光体層
26 接着材料
28 粒子
30 ルミネッセンスセラミック
32 正角の層
34 成長基板
Claims (1)
- n型領域とp型領域との間に配置され第1のピーク波長を有する青色光を発するように構成された発光層、を含む半導体構造と、
前記発光層により発せられた光のパスにおいて配置され第2のピーク波長を有する光を発するように構成された第1の蛍光体と、
前記発光層により発せられた光のパスにおいて配置され第3のピーク波長を有する光を発するように構成された第2の蛍光体と、
を具備し、
前記第2の蛍光体がEu3+を含み、
298K及び1.013barにおける前記第2の蛍光体の励起スペクトルにおいて、460nmと470nmとの間の波長領域における最大強度が、220nmと320nmとの間の波長領域における最大強度の少なくとも5%であり、
前記第2の蛍光体が、Ba3(Y1-x-y-zGdxLuy)(BO3)3:Euz、M=(Br,Cl,I)を有するLaOM:Eu、Na9[(Y1-x-y-zLuxGdy)W10O36]: Euz、(Y1-x-y-zLuxGdy)[P(Mo3O10)4]: Euz(x, y=0.0-1.0, z=0.0-0.2)、及び、これらの混合物を含むグループから選択される、ことを特徴とするデバイス。
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EP06100385.1 | 2006-01-16 | ||
EP06100385 | 2006-01-16 | ||
US11/623,068 US7446343B2 (en) | 2006-01-16 | 2007-01-13 | Phosphor converted light emitting device |
US11/623,068 | 2007-01-13 |
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JP2007032676A Division JP5432435B2 (ja) | 2006-01-16 | 2007-01-16 | 蛍光体変換発光デバイス |
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JP2008549959A Withdrawn JP2009524212A (ja) | 2006-01-16 | 2007-01-10 | Eu含有蛍光体材料を有する発光装置 |
JP2013204416A Active JP5628394B2 (ja) | 2006-01-16 | 2013-09-30 | 蛍光体変換半導体発光デバイス |
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EP (2) | EP1979439A1 (ja) |
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KR (1) | KR20080089486A (ja) |
CN (2) | CN101370907A (ja) |
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US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
WO2007081719A2 (en) | 2006-01-05 | 2007-07-19 | Illumitex, Inc. | Separate optical device for directing light from an led |
CN101553928B (zh) | 2006-10-02 | 2011-06-01 | 伊鲁米特克有限公司 | Led系统和方法 |
JP2008166782A (ja) * | 2006-12-26 | 2008-07-17 | Seoul Semiconductor Co Ltd | 発光素子 |
TWI384052B (zh) * | 2007-07-25 | 2013-02-01 | Univ Nat Chiao Tung | 新穎螢光體與其製造方法 |
TWI363085B (en) * | 2007-07-26 | 2012-05-01 | Univ Nat Chiao Tung | A novel phosphor and fabrication of the same |
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US20080023712A1 (en) | 2008-01-31 |
EP1979438A1 (en) | 2008-10-15 |
CN101370906A (zh) | 2009-02-18 |
WO2007080541A1 (en) | 2007-07-19 |
TWI422057B (zh) | 2014-01-01 |
US7446343B2 (en) | 2008-11-04 |
JP2009524212A (ja) | 2009-06-25 |
EP1979439A1 (en) | 2008-10-15 |
EP1979438B1 (en) | 2015-08-19 |
CN101370907A (zh) | 2009-02-18 |
KR20080089486A (ko) | 2008-10-06 |
RU2008133603A (ru) | 2010-02-27 |
TW200746465A (en) | 2007-12-16 |
CN101370906B (zh) | 2015-01-28 |
JP5628394B2 (ja) | 2014-11-19 |
TW200738847A (en) | 2007-10-16 |
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