JP2014022751A5 - - Google Patents

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Publication number
JP2014022751A5
JP2014022751A5 JP2013150526A JP2013150526A JP2014022751A5 JP 2014022751 A5 JP2014022751 A5 JP 2014022751A5 JP 2013150526 A JP2013150526 A JP 2013150526A JP 2013150526 A JP2013150526 A JP 2013150526A JP 2014022751 A5 JP2014022751 A5 JP 2014022751A5
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JP
Japan
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film
magnetic
additional
magnetic junction
junction
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JP2013150526A
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English (en)
Japanese (ja)
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JP2014022751A (ja
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Priority claimed from US13/553,965 external-priority patent/US9129690B2/en
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Publication of JP2014022751A publication Critical patent/JP2014022751A/ja
Publication of JP2014022751A5 publication Critical patent/JP2014022751A5/ja
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JP2013150526A 2012-07-20 2013-07-19 磁気接合、磁気メモリ、改善された特性を有する磁気接合を提供するための方法、及びシステム Pending JP2014022751A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/553,965 2012-07-20
US13/553,965 US9129690B2 (en) 2012-07-20 2012-07-20 Method and system for providing magnetic junctions having improved characteristics

Related Child Applications (1)

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JP2019010149A Division JP2019071480A (ja) 2012-07-20 2019-01-24 磁気メモリを製造するための装置及び磁気接合を提供するための方法

Publications (2)

Publication Number Publication Date
JP2014022751A JP2014022751A (ja) 2014-02-03
JP2014022751A5 true JP2014022751A5 (enExample) 2016-09-01

Family

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JP2013150526A Pending JP2014022751A (ja) 2012-07-20 2013-07-19 磁気接合、磁気メモリ、改善された特性を有する磁気接合を提供するための方法、及びシステム
JP2019010149A Pending JP2019071480A (ja) 2012-07-20 2019-01-24 磁気メモリを製造するための装置及び磁気接合を提供するための方法

Family Applications After (1)

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JP2019010149A Pending JP2019071480A (ja) 2012-07-20 2019-01-24 磁気メモリを製造するための装置及び磁気接合を提供するための方法

Country Status (4)

Country Link
US (1) US9129690B2 (enExample)
JP (2) JP2014022751A (enExample)
KR (1) KR102056886B1 (enExample)
CN (1) CN103579497B (enExample)

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US11211426B2 (en) 2019-10-01 2021-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel junction selector MRAM
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