JP2014022751A5 - - Google Patents
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- JP2014022751A5 JP2014022751A5 JP2013150526A JP2013150526A JP2014022751A5 JP 2014022751 A5 JP2014022751 A5 JP 2014022751A5 JP 2013150526 A JP2013150526 A JP 2013150526A JP 2013150526 A JP2013150526 A JP 2013150526A JP 2014022751 A5 JP2014022751 A5 JP 2014022751A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- additional
- magnetic junction
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000992 sputter etching Methods 0.000 claims 18
- 125000006850 spacer group Chemical group 0.000 claims 13
- 238000001020 plasma etching Methods 0.000 claims 10
- 239000012528 membrane Substances 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 230000004888 barrier function Effects 0.000 claims 4
- 210000000352 storage cell Anatomy 0.000 claims 3
- 238000007740 vapor deposition Methods 0.000 claims 3
- 229910019236 CoFeB Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/553,965 | 2012-07-20 | ||
| US13/553,965 US9129690B2 (en) | 2012-07-20 | 2012-07-20 | Method and system for providing magnetic junctions having improved characteristics |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019010149A Division JP2019071480A (ja) | 2012-07-20 | 2019-01-24 | 磁気メモリを製造するための装置及び磁気接合を提供するための方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014022751A JP2014022751A (ja) | 2014-02-03 |
| JP2014022751A5 true JP2014022751A5 (enExample) | 2016-09-01 |
Family
ID=49946433
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013150526A Pending JP2014022751A (ja) | 2012-07-20 | 2013-07-19 | 磁気接合、磁気メモリ、改善された特性を有する磁気接合を提供するための方法、及びシステム |
| JP2019010149A Pending JP2019071480A (ja) | 2012-07-20 | 2019-01-24 | 磁気メモリを製造するための装置及び磁気接合を提供するための方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019010149A Pending JP2019071480A (ja) | 2012-07-20 | 2019-01-24 | 磁気メモリを製造するための装置及び磁気接合を提供するための方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9129690B2 (enExample) |
| JP (2) | JP2014022751A (enExample) |
| KR (1) | KR102056886B1 (enExample) |
| CN (1) | CN103579497B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130017267A (ko) * | 2011-08-10 | 2013-02-20 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
| US8901687B2 (en) | 2012-11-27 | 2014-12-02 | Industrial Technology Research Institute | Magnetic device with a substrate, a sensing block and a repair layer |
| KR102078849B1 (ko) * | 2013-03-11 | 2020-02-18 | 삼성전자 주식회사 | 자기저항 구조체, 이를 포함하는 자기 메모리 소자 및 자기저항 구조체의 제조 방법 |
| US9305579B2 (en) * | 2014-01-15 | 2016-04-05 | HGST Netherlands B.V. | Fabrication of side-by-side sensors for MIMO recording |
| US20150263272A1 (en) * | 2014-03-13 | 2015-09-17 | Kazuhiro Tomioka | Manufacturing method of magnetic memory device and manufacturing apparatus of magnetic memory device |
| US9257638B2 (en) * | 2014-03-27 | 2016-02-09 | Lam Research Corporation | Method to etch non-volatile metal materials |
| US9559296B2 (en) | 2014-07-03 | 2017-01-31 | Samsung Electronics Co., Ltd. | Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer |
| US9263667B1 (en) * | 2014-07-25 | 2016-02-16 | Spin Transfer Technologies, Inc. | Method for manufacturing MTJ memory device |
| US9412786B1 (en) | 2014-10-02 | 2016-08-09 | Everspin Technologies, Inc. | Magnetoresistive device design and process integration with surrounding circuitry |
| KR102276541B1 (ko) | 2014-11-27 | 2021-07-13 | 삼성전자주식회사 | 자기 메모리 장치 및 이의 제조 방법 |
| US10468590B2 (en) | 2015-04-21 | 2019-11-05 | Spin Memory, Inc. | High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory |
| US9728712B2 (en) | 2015-04-21 | 2017-08-08 | Spin Transfer Technologies, Inc. | Spin transfer torque structure for MRAM devices having a spin current injection capping layer |
| US9853206B2 (en) | 2015-06-16 | 2017-12-26 | Spin Transfer Technologies, Inc. | Precessional spin current structure for MRAM |
| US9773974B2 (en) | 2015-07-30 | 2017-09-26 | Spin Transfer Technologies, Inc. | Polishing stop layer(s) for processing arrays of semiconductor elements |
| US10177197B2 (en) * | 2015-11-16 | 2019-01-08 | Samsung Electronics Co., Ltd. | Magnetic junctions having elongated free layers |
| US9741926B1 (en) | 2016-01-28 | 2017-08-22 | Spin Transfer Technologies, Inc. | Memory cell having magnetic tunnel junction and thermal stability enhancement layer |
| US10672976B2 (en) | 2017-02-28 | 2020-06-02 | Spin Memory, Inc. | Precessional spin current structure with high in-plane magnetization for MRAM |
| US10665777B2 (en) | 2017-02-28 | 2020-05-26 | Spin Memory, Inc. | Precessional spin current structure with non-magnetic insertion layer for MRAM |
| KR102368033B1 (ko) | 2017-09-20 | 2022-02-25 | 삼성전자주식회사 | 자기 저항 메모리 소자의 제조 방법 |
| US10468588B2 (en) | 2018-01-05 | 2019-11-05 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer |
| US10446743B2 (en) | 2018-01-11 | 2019-10-15 | Qualcomm Incorporated | Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density |
| JP2020043104A (ja) | 2018-09-06 | 2020-03-19 | キオクシア株式会社 | 磁気記憶装置および磁気記憶装置の製造方法 |
| US10580827B1 (en) | 2018-11-16 | 2020-03-03 | Spin Memory, Inc. | Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching |
| US11211426B2 (en) | 2019-10-01 | 2021-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel junction selector MRAM |
| KR102862389B1 (ko) | 2020-01-31 | 2025-09-22 | 삼성전자주식회사 | 자기 기억 소자 |
| WO2022087943A1 (en) * | 2020-10-29 | 2022-05-05 | Yangtze Memory Technologies Co., Ltd. | Concentric staircase structure in three-dimensional memory device and method thereof |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6984529B2 (en) | 2003-09-10 | 2006-01-10 | Infineon Technologies Ag | Fabrication process for a magnetic tunnel junction device |
| JP2005101441A (ja) * | 2003-09-26 | 2005-04-14 | Anelva Corp | 磁気抵抗多層膜 |
| JP2005194589A (ja) * | 2004-01-08 | 2005-07-21 | Sony Corp | 真空装置およびその制御方法 |
| KR100561859B1 (ko) * | 2004-01-16 | 2006-03-16 | 삼성전자주식회사 | 컨택홀이 없는 나노 크기의 자기터널접합 셀 형성 방법 |
| JP2005268252A (ja) | 2004-03-16 | 2005-09-29 | Sony Corp | 磁気記憶装置の製造方法 |
| US20060168794A1 (en) * | 2005-01-28 | 2006-08-03 | Hitachi Global Storage Technologies | Method to control mask profile for read sensor definition |
| US20060158790A1 (en) * | 2005-01-14 | 2006-07-20 | Hitachi Global Storage Technologies | Magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability |
| US8540852B2 (en) * | 2005-09-13 | 2013-09-24 | Canon Anelva Corporation | Method and apparatus for manufacturing magnetoresistive devices |
| US7639456B2 (en) | 2005-10-06 | 2009-12-29 | Hitachi Global Storage Technologies Netherlands B.V. | Double mill process for patterning current perpendicular to plane (CPP) magnetoresistive devices to minimize barrier shorting and barrier damage |
| US7509729B2 (en) * | 2006-04-25 | 2009-03-31 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making a perpendicular magnetic recording write head |
| JP4630856B2 (ja) * | 2006-09-29 | 2011-02-09 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
| JP2008218829A (ja) * | 2007-03-06 | 2008-09-18 | Toshiba Corp | 磁気抵抗素子及びその製造方法 |
| JP4625822B2 (ja) * | 2007-03-16 | 2011-02-02 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| US8472149B2 (en) | 2007-10-01 | 2013-06-25 | Tdk Corporation | CPP type magneto-resistive effect device and magnetic disk system |
| WO2009060539A1 (ja) * | 2007-11-09 | 2009-05-14 | Canon Anelva Corporation | インライン型ウェハ搬送装置 |
| CN101855717B (zh) * | 2007-11-09 | 2011-10-19 | 佳能安内华股份有限公司 | 在线型晶圆输送装置 |
| KR100939111B1 (ko) | 2007-12-21 | 2010-01-28 | 주식회사 하이닉스반도체 | 자기터널접합소자 제조방법 |
| JP2009176806A (ja) | 2008-01-22 | 2009-08-06 | Fujitsu Ltd | 不揮発性磁気メモリ素子 |
| JP4875037B2 (ja) * | 2008-09-24 | 2012-02-15 | 株式会社東芝 | 磁気メモリ、その再生方法、および書き込み方法 |
| US7829923B2 (en) | 2008-10-23 | 2010-11-09 | Qualcomm Incorporated | Magnetic tunnel junction and method of fabrication |
| US7989224B2 (en) | 2009-04-30 | 2011-08-02 | International Business Machines Corporation | Sidewall coating for non-uniform spin momentum-transfer magnetic tunnel junction current flow |
| US8422285B2 (en) * | 2009-10-30 | 2013-04-16 | Grandis, Inc. | Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories |
| US8159866B2 (en) * | 2009-10-30 | 2012-04-17 | Grandis, Inc. | Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories |
| US8254162B2 (en) * | 2010-01-11 | 2012-08-28 | Grandis, Inc. | Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories |
| JP2011198416A (ja) * | 2010-03-19 | 2011-10-06 | Toshiba Corp | 磁気メモリ |
| US8981502B2 (en) | 2010-03-29 | 2015-03-17 | Qualcomm Incorporated | Fabricating a magnetic tunnel junction storage element |
| JP2012007194A (ja) * | 2010-06-22 | 2012-01-12 | Fujifilm Corp | 成膜装置および光電変換素子の製造方法 |
| JP2012014779A (ja) * | 2010-06-30 | 2012-01-19 | Ulvac Japan Ltd | 磁気記録媒体の製造方法 |
| US8374048B2 (en) * | 2010-08-11 | 2013-02-12 | Grandis, Inc. | Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy |
| US8399941B2 (en) * | 2010-11-05 | 2013-03-19 | Grandis, Inc. | Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements |
| CN102569642B (zh) * | 2010-12-07 | 2016-08-03 | 三星电子株式会社 | 存储节点、包括该存储节点的磁存储器件及其制造方法 |
| US8432009B2 (en) * | 2010-12-31 | 2013-04-30 | Grandis, Inc. | Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories |
| US8446761B2 (en) * | 2010-12-31 | 2013-05-21 | Grandis, Inc. | Method and system for providing multiple logic cells in a single stack |
| JP2012204408A (ja) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | 半導体装置の製造方法 |
-
2012
- 2012-07-20 US US13/553,965 patent/US9129690B2/en active Active
-
2013
- 2013-07-18 KR KR1020130084835A patent/KR102056886B1/ko active Active
- 2013-07-19 JP JP2013150526A patent/JP2014022751A/ja active Pending
- 2013-07-22 CN CN201310308993.4A patent/CN103579497B/zh active Active
-
2019
- 2019-01-24 JP JP2019010149A patent/JP2019071480A/ja active Pending
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