KR102056886B1 - 자기 접합, 자기 메모리, 개선된 특성을 갖는 자기 접합을 제공하기 위한 방법 및 시스템 - Google Patents

자기 접합, 자기 메모리, 개선된 특성을 갖는 자기 접합을 제공하기 위한 방법 및 시스템 Download PDF

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KR102056886B1
KR102056886B1 KR1020130084835A KR20130084835A KR102056886B1 KR 102056886 B1 KR102056886 B1 KR 102056886B1 KR 1020130084835 A KR1020130084835 A KR 1020130084835A KR 20130084835 A KR20130084835 A KR 20130084835A KR 102056886 B1 KR102056886 B1 KR 102056886B1
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magnetic
film
ion milling
junction
chamber
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KR20140012595A (ko
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박창만
더스틴 윌리엄 에릭슨
모하매드 토우픽 크로운비
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삼성전자주식회사
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Drying Of Semiconductors (AREA)
KR1020130084835A 2012-07-20 2013-07-18 자기 접합, 자기 메모리, 개선된 특성을 갖는 자기 접합을 제공하기 위한 방법 및 시스템 Active KR102056886B1 (ko)

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US13/553,965 2012-07-20
US13/553,965 US9129690B2 (en) 2012-07-20 2012-07-20 Method and system for providing magnetic junctions having improved characteristics

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KR20140012595A KR20140012595A (ko) 2014-02-03
KR102056886B1 true KR102056886B1 (ko) 2019-12-18

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US (1) US9129690B2 (enExample)
JP (2) JP2014022751A (enExample)
KR (1) KR102056886B1 (enExample)
CN (1) CN103579497B (enExample)

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US9305579B2 (en) * 2014-01-15 2016-04-05 HGST Netherlands B.V. Fabrication of side-by-side sensors for MIMO recording
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US10468590B2 (en) 2015-04-21 2019-11-05 Spin Memory, Inc. High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
US9728712B2 (en) 2015-04-21 2017-08-08 Spin Transfer Technologies, Inc. Spin transfer torque structure for MRAM devices having a spin current injection capping layer
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US9741926B1 (en) 2016-01-28 2017-08-22 Spin Transfer Technologies, Inc. Memory cell having magnetic tunnel junction and thermal stability enhancement layer
US10672976B2 (en) 2017-02-28 2020-06-02 Spin Memory, Inc. Precessional spin current structure with high in-plane magnetization for MRAM
US10665777B2 (en) 2017-02-28 2020-05-26 Spin Memory, Inc. Precessional spin current structure with non-magnetic insertion layer for MRAM
KR102368033B1 (ko) 2017-09-20 2022-02-25 삼성전자주식회사 자기 저항 메모리 소자의 제조 방법
US10468588B2 (en) 2018-01-05 2019-11-05 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
US10446743B2 (en) 2018-01-11 2019-10-15 Qualcomm Incorporated Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density
JP2020043104A (ja) 2018-09-06 2020-03-19 キオクシア株式会社 磁気記憶装置および磁気記憶装置の製造方法
US10580827B1 (en) 2018-11-16 2020-03-03 Spin Memory, Inc. Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
US11211426B2 (en) 2019-10-01 2021-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel junction selector MRAM
KR102862389B1 (ko) 2020-01-31 2025-09-22 삼성전자주식회사 자기 기억 소자
WO2022087943A1 (en) * 2020-10-29 2022-05-05 Yangtze Memory Technologies Co., Ltd. Concentric staircase structure in three-dimensional memory device and method thereof

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KR20140012595A (ko) 2014-02-03
US20140022839A1 (en) 2014-01-23
US9129690B2 (en) 2015-09-08
CN103579497B (zh) 2017-04-12
JP2014022751A (ja) 2014-02-03
CN103579497A (zh) 2014-02-12
JP2019071480A (ja) 2019-05-09

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