JP2014017285A - 窒化物系化合物半導体素子 - Google Patents
窒化物系化合物半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 150000001875 compounds Chemical class 0.000 title claims abstract description 45
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 229910052799 carbon Inorganic materials 0.000 claims description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 43
- -1 nitride compound Chemical class 0.000 claims description 43
- 238000006243 chemical reaction Methods 0.000 claims description 27
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- 230000007547 defect Effects 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 60
- 229910002601 GaN Inorganic materials 0.000 description 60
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 49
- 238000004519 manufacturing process Methods 0.000 description 29
- 238000010586 diagram Methods 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 238000000034 method Methods 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 13
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- 230000005533 two-dimensional electron gas Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
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- 150000003624 transition metals Chemical class 0.000 description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
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- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
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- 238000010884 ion-beam technique Methods 0.000 description 2
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- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
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- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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Abstract
【解決手段】基板と、前記基板上にバッファ層を介して形成された第1窒化物系化合物半導体層と、前記第1窒化物系化合物半導体層上に形成された、該第1窒化物系化合物半導体のバンドギャップよりも大きいバンドギャップを有する第2窒化物系化合物半導体層と、前記第2窒化物系化合物半導体層上に形成された電極と、を備え、前記第2窒化物系化合物半導体層は、表面近傍に炭素がドープされた領域を有する窒化物系化合物半導体素子。
【選択図】図6
Description
はじめに、GaN結晶の表面における、窒素空孔(VN)の電気特性への影響と炭素ドープによる効果とを確認するため、第一原理電子状態計算(シミュレーション)を行った結果を説明する。
・原子モデル:84原子(ガリウム40個、窒素40個(うち一個を空孔または炭素原子置換)、水素原子4個)と10オングストロームの真空層からなるスラブモデル
・カットオフエネルギー:波動函数および電荷密度分布で、それぞれ25Ryおよび230Ry
・k点サンプル:3×3×1
・計算したバンド数:364
つぎに、図面を参照して本発明に係る窒化物系化合物半導体素子の実施の形態を詳細に説明する。なお、この実施の形態によりこの発明が限定されるものではない。また、図面においては、同一または対応する要素には適宜同一符号を付している。また、図面は模式的なものであり、各層の厚さや厚さの比率などは現実のものとは異なることに留意すべきである。また、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれている。
図6は、本発明の実施の形態1に係る窒化物系化合物半導体素子である異種接合電界効果トランジスタ(HFET)の模式的な断面図である。
はじめに、シリコン基板1上にエピタクシャル層8を形成して、エピタクシャル基板を作製する。
具体的には、まず、CZ(チョコラルスキー)法で成長された4インチ(約100mm)径、厚さ1mmのシリコン基板1(面方位(111))を設置した有機金属気相成長(MOCVD)装置内に、1000℃の温度でアンモニア(NH3)を35L/minの流量で0.3分間導入し、窒化珪素層2を形成する。
以上の製造工程にて、エピタクシャル基板が作製される。
つぎに、1.で作製したエピタクシャル基板に窒素イオンを照射する。
15N+1H→12C+α+γ (式1)
の反応が生じる。ここでαはアルファ粒子(ヘリウム原子核)であり、γはガンマ線を示す。
次に、HFET100の素子を作製する。素子は公知の工程に従って、フォトリソグラフィ工程を用いてパターンニングを行い作製できる。
図12は、本発明の実施の形態2に係る窒化物系化合物半導体素子であるMOSFETの模式的な断面図である。
はじめに、シリコン基板21上にエピタクシャル層28を形成して、エピタクシャル基板を作製する。
具体的には、まず、CZ法で成長された厚さが1mmのシリコン基板21(面方位(110))を設置したMOCVD装置内に、TMAlとNH3を、それぞれ175μmol/min、35L/minの流量で導入し、成長温度1000℃で、層厚40nmのAlNからなるシード層22をシリコン基板21上にエピタクシャル成長させる。
ここで、面方位が(110)のシリコン基板21を用いることによって、面方位が(111)のシリコン基板を用いる場合と比較して、転位密度の低減効果を得ることができる。
以上の製造工程にて、エピタクシャル基板が作製される。
次に、1.で作製したエピタクシャル基板に窒素イオンを照射し、水素共鳴核反応を利用した炭素ドープを行う。図14は、図12に示すMOSFETの製造工程のうち、炭素ドープ工程を説明する図である。図14に示すように、6.385MeVに加速したNイオンのビームB2をビーム電流50nAで照射し、ビームB2を矢印Ar2のように相対的にスキャンする。照射条件等は実施の形態1の場合と同様である。これによって、AlGaN層27の表面から10nm程度以内の深さの領域に炭素がドープされる。
次に、MOSFET200の素子を作製する。
まず、AlGaN層27上に、プラズマCVDによりSiO2膜を形成する。次に、SiO2膜上にフォトレジストを塗布し、フォトリソグラフィ工程を用いてパターンニングを行い、弗化水素酸系溶液を用いてエッチングを行い、ゲート電極30Gを形成すべき位置のSiO2膜に開口部を形成する。
図15は、本発明の実施の形態3に係る窒化物系化合物半導体素子であるショットキーバリアダイオード(Schottky Barrier Diode:SBD)の模式的な断面図である。図16は、図15に示すSBDの上面図である。
はじめに、サファイア基板31上にエピタクシャル層35を形成して、エピタクシャル基板を作製する。
具体的には、まず、厚さが500μmの2インチ(約50mm)径のサファイア基板31を設置したMOCVD装置内に、TMGaとNH3とを、それぞれ14μmol/min、12L/minの流量で導入し、成長温度550℃で、層厚30nmのGaNからなるバッファ層32をエピタクシャル成長させる。
以上の製造工程にて、エピタクシャル基板が作製される。
つぎに、1.で作製したエピタクシャル基板に、以下の工程によってイオン注入による炭素ドープを行う。これによって、AlGaN層34の表面近傍の領域に炭素がドープされる。
次に、SBD300の素子を作製する。素子は公知の工程に従って、フォトリソグラフィ工程を用いてパターンニングを行い作製できる。
2 窒化珪素層
3、22 シード層
4、23、32 バッファ層
5,24 高抵抗層
4aa、4ba、4ca、4da、4ea、4fa、6、26、33 GaN層
4ab、4bb、4cb、4db、4eb、4fb AlN層
7、27、34 AlGaN層
8、28、35 エピタクシャル層
9G、30G ゲート電極
9S、30S ソース電極
9D、30D ドレイン電極
25 p−GaN層
29 ゲート酸化膜
31 サファイア基板
36A アノード電極
36C カソード電極
100 HFET
200 MOSFET
300 SBD
Ar1、Ar2、Ar3 矢印
B1、B2、B3 ビーム
NA1 窒素原子
R リセス部
Claims (8)
- 基板と、
前記基板上にバッファ層を介して形成された第1窒化物系化合物半導体層と、
前記第1窒化物系化合物半導体層上に形成された、該第1窒化物系化合物半導体層のバンドギャップよりも大きいバンドギャップを有する第2窒化物系化合物半導体層と、
前記第2窒化物系化合物半導体層上に形成された電極と、
を備え、前記第2窒化物系化合物半導体層は、表面近傍に炭素がドープされた領域を有することを特徴とする窒化物系化合物半導体素子。 - 前記炭素がドープされた領域は、前記第2窒化物系化合物半導体層の表面から10nm以内の深さであることを特徴とする請求項1に記載の窒化物系化合物半導体素子。
- 前記炭素は水素共鳴核反応を利用してドープされたものであることを特徴とする請求項1または2に記載の窒化物系化合物半導体素子。
- 前記炭素はイオン注入によりドープされたものであることを特徴とする請求項1または2に記載の窒化物系化合物半導体素子。
- 前記第2窒化物系化合物半導体層の表面から3〜4μmの領域に照射欠陥が形成されたことを特徴とする請求項1〜3のいずれか一つに記載の窒化物系化合物半導体素子。
- 前記バッファ層または前記第2窒化物系化合物半導体層は、ガリウム空孔と水素とからなる複合欠陥が分解されて形成されたガリウム空孔を含むことを特徴とする請求項1〜3および請求項5のいずれか一つに記載の窒化物系化合物半導体素子。
- 前記第1窒化物系化合物半導体層はGaNからなり、前記第2窒化物系化合物半導体層はAlxGa1−xN(0<x≦1)からなることを特徴とする請求項1〜6のいずれか一つに記載の窒化物系化合物半導体素子。
- 電界効果トランジスタまたはショットキーバリアダイオードであることを特徴とする請求項1〜7のいずれか一つに記載の窒化物系化合物半導体素子。
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