JP2013512786A5 - - Google Patents

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Publication number
JP2013512786A5
JP2013512786A5 JP2012542069A JP2012542069A JP2013512786A5 JP 2013512786 A5 JP2013512786 A5 JP 2013512786A5 JP 2012542069 A JP2012542069 A JP 2012542069A JP 2012542069 A JP2012542069 A JP 2012542069A JP 2013512786 A5 JP2013512786 A5 JP 2013512786A5
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JP
Japan
Prior art keywords
particles
abrasive
substrate
nanoparticles
hydrophobic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012542069A
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English (en)
Japanese (ja)
Other versions
JP5658761B2 (ja
JP2013512786A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2010/056973 external-priority patent/WO2011068678A1/en
Publication of JP2013512786A publication Critical patent/JP2013512786A/ja
Publication of JP2013512786A5 publication Critical patent/JP2013512786A5/ja
Application granted granted Critical
Publication of JP5658761B2 publication Critical patent/JP5658761B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012542069A 2009-12-03 2010-11-17 粒子の静電気付着の方法、研磨材グレイン及び物品 Expired - Fee Related JP5658761B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26628609P 2009-12-03 2009-12-03
US61/266,286 2009-12-03
PCT/US2010/056973 WO2011068678A1 (en) 2009-12-03 2010-11-17 Method of electrostatic deposition of particles, abrasive grain and articles

Publications (3)

Publication Number Publication Date
JP2013512786A JP2013512786A (ja) 2013-04-18
JP2013512786A5 true JP2013512786A5 (enExample) 2013-12-19
JP5658761B2 JP5658761B2 (ja) 2015-01-28

Family

ID=43535863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012542069A Expired - Fee Related JP5658761B2 (ja) 2009-12-03 2010-11-17 粒子の静電気付着の方法、研磨材グレイン及び物品

Country Status (7)

Country Link
US (1) US8894466B2 (enExample)
EP (1) EP2507336B1 (enExample)
JP (1) JP5658761B2 (enExample)
CN (1) CN102639665B (enExample)
BR (1) BR112012013350A2 (enExample)
SG (1) SG181046A1 (enExample)
WO (1) WO2011068678A1 (enExample)

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CN104947169B (zh) * 2015-06-19 2017-05-17 浙江大学 一种超疏水二氧化硅薄膜的制备方法
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KR20220130544A (ko) * 2021-03-18 2022-09-27 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법

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