TWI400340B - 鎂基儲氫材料奈米化方法 - Google Patents

鎂基儲氫材料奈米化方法 Download PDF

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TWI400340B
TWI400340B TW097132385A TW97132385A TWI400340B TW I400340 B TWI400340 B TW I400340B TW 097132385 A TW097132385 A TW 097132385A TW 97132385 A TW97132385 A TW 97132385A TW I400340 B TWI400340 B TW I400340B
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magnesium
hydrogen storage
storage material
based hydrogen
nanocrystallization
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TW201009093A (en
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Pei Shan Yen
Chun Ju Huang
Jie Ren Ku
bin hao Chen
Ming Shan Jeng
Fanghei Tsau
Tu Chen
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Ind Tech Res Inst
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Priority to US12/488,165 priority patent/US8056840B2/en
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Priority to JP2009152428A priority patent/JP5164935B2/ja
Priority to KR1020090060483A priority patent/KR101106508B1/ko
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Description

鎂基儲氫材料奈米化方法
本發明係關於一種鎂基儲氫材料，更特別關於奈米化鎂基化合物的方法。
在儲氫材料的研究中，為提高有效儲氫量、加速吸放氫速率、及降低吸放氫溫度，材料奈米化(nanotization)為新研究方向。目前以機械方式奈米化具有延展性的材料如鎂基化合物或添加之高硬度材料有其困難，原因在於磨球尺寸不是奈米尺度且與研磨材料的相對尺寸過大，因此難以施加奈米級的應力於上述材料。對於延展性材料而言，球磨雖可破壞材料，但破壞後之材料易於再結晶成更大尺寸，因此無法有效將其晶體尺寸縮小至奈米級。為避免再結晶現象，習知方法係利用液態氮降低延展性材料如鋁基化合物之延展性，但上述低溫研磨製程將會增加成本。
綜上所述，目前仍需新的研磨方法以形成奈米級儲氫材料。
本發明提供一種鎂基儲氫材料奈米化方法，包括將鎂基化合物與奈米碳材於鈍氣氛圍下混合研磨，形成奈米級鎂基儲氫材料；其中奈米級鎂基儲氫材料之尺寸小於100奈米。
本發明提供一種鎂基儲氫材料奈米化方法，包括將鎂基化合物與奈米碳材於鈍氣氛圍下混合研磨，形成奈米級鎂基儲氫材料。奈米級鎂基儲氫材料的定義為尺寸小於100奈米。
上述之鎂基化合物為鎂或鎂為主之合金如Mg1-x Ax ，A係Li、Ca、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Al、Y、Zr、Nb、Mo、In、Sn、O、Si、B、C、F、或Be，且0<x0.3。
合適之奈米碳材可為碳奈米管、碳奈米粉體、或上述之混合物。碳奈米管可為單層或多層碳奈米管，其管徑約介於12至15nm之間。在本發明一實施例中，碳奈米管係購自aldrich。碳奈米粉體之粒徑約介於10nm至30nm之間。在本發明一實施例中，碳奈米粉體係購自aldrich。
在本發明一實施例中，鎂基化合物與奈米碳材之重量比介於100：0.5至100：1之間。過多之鎂基化合物會造成儲氫材料吸氫溫度上升及晶界尺寸過大的現象，而過多之奈米碳材會造成吸氫重量比的下降。
將上述之鎂基化合物與奈米碳材混合後，於惰性氣體如氮氣、氬氣下進行球磨。球磨製程的研磨珠為直徑8~10mm鎢鋼球，溫度為27℃至40℃之間，壓力為1.0atm至2.0atm之間，時間為6至12hr之間。當研磨時間大於12hr時，將會造成晶粒過度成長，但小於6hr時，將無法將晶粒磨到奈米級。
經上述研磨製程後，即形成所謂的奈米級鎂基儲氫材料。由於本發明以更小、更硬、及更高剛性之碳奈米管作為研磨漿，研磨珠可將研磨應力集中於奈米尺度。高內部應力可使破壞面迅速延伸至鎂基化合物內部，將其破壞至奈米尺寸，並在材料內部引進大量的晶體內部應力與高角度晶界。如此一來，奈米級鎂基儲氫材料的結構具有很多的晶界缺陷，可作為氫原子擴散的快速通道，有助於儲氫材料快速儲存或釋放氫原子。在應用方面，可使有效儲氫量逼近理論最大儲氫量，加速吸放氫速率，及降低吸放氫溫度。在本發明一實施例中，奈米級鎂基儲氫材料在150℃至300℃之間的吸放氫速率大於0.0073 L/s。在本發明另一實施例中，奈米級鎂基儲氫材料在室溫(25℃)的吸放氫速率介於0.0051L/s至0.0073 L/s之間。
在本發明另一實施例中，可添加高強度且非延展性之高硬度材料至上述之研磨製程。研磨順序並無限制，可先研磨高硬度材料與奈米碳材之混合物後，再加入鎂基化合物進行研磨。亦可先研磨鎂基化合物與碳奈米材之混合物後，再加入高硬度材料進行研磨。亦可同時研磨鎂基化合物、高硬度材料、與奈米碳材之混合物。經研磨後，高硬度材料之尺寸將奈米化至小於100nm，且奈米化之高硬度材料會均勻分散於奈米級鎂基儲氫材料中。導入高硬度材料之目的在於增加儲氫材料之機械強度。高硬度材料可為V、Ti、Fe、Co、Nb、Ca、Cs、Mn、Ni、Ca、Ce、Y、La、Pd、Hf、K、Rb、Rh、Ru、Zr、Be、Cr、Ge、Si、Li、上 述之混合物、或上述之合金。當上述之高硬度材料為鐵、鈦、或鎳時，可進一步具有觸媒的作用加速將氫分子轉化成氫原子並快速儲存氫原子。鎂基化合物與高硬度材料之重量比介於100：5至100：30之間，若超過這個比例，則過多之高硬度材料將會降低儲氫材料之性能。
為使本技藝人士更清楚本發明之特徵，特舉例於下述之實施例。
實施例1
取0.7g之鎂(偉斯企業股份有限公司)、0.3g之FeTi(昇美達國際開發股份有限公司)、及0.01g之碳奈米管(aldrich)於氬氣下進行球磨製程。球磨製程的研磨珠為鎢鋼，溫度為27℃，壓力為1atm，時間為6小時。由XRD繞射結果及穿透式電子顯微鏡圖像分析可知，球磨後之Mg與的平均晶體小於100nm。另一方面，測量壓力、氫氣濃度、以及溫度(Pressure-Concentration-Temperature)等參數推算其儲氫速率，結果如第1圖所示。
比較實施例1
與實施例1大致相同，唯一的差別在於未添加碳奈米管作為研磨漿。由XRD繞射結果及穿透式電子顯微鏡圖像分析可知，球磨後之Mg與的平均晶體大於100nm。另一方面，測量壓力、氫氣濃度、以及溫度(Pressure-Concentration-Temperature)等參數推算其儲氫速率，結果如第1圖所示。
由第1圖之儲氫速率比較可知，有添加碳奈米管之奈 米化製程所形成之儲氫材料(實施例1)，明顯優於未添加碳奈米管之奈米化製程所形成之儲氫材料(比較實施例1)。
雖然本發明已以數個實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
第1圖係本發明中實施例1及比較實施例1之儲氫速率比較圖。

Claims (10)

  1. 一種鎂基儲氫材料奈米化方法，包括：將一鎂為主之合金與一奈米碳材於一鈍氣氛圍下混合研磨，形成一奈米級鎂基儲氫材料；其中該奈米級鎂基儲氫材料之尺寸小於100奈米，且該鎂為主之合金直接接觸該奈米碳材。
  2. 如申請專利範圍第1項所述之鎂基儲氫材料奈米化方法，其中該奈米碳材包括碳奈米管、碳奈米粉體、或上述之組合。
  3. 如申請專利範圍第1項所述之鎂基儲氫材料奈米化方法，其中該鈍氣氛圍包括氮氣或氬氣。
  4. 如申請專利範圍第1項所述之鎂基儲氫材料奈米化方法，其中該鎂為主之合金與該奈米碳材之重量比介於100：0.5至100：1之間。
  5. 如申請專利範圍第1項所述之鎂基儲氫材料奈米化方法，其中該混合研磨的時間介於6hr至12hr之間，溫度介於27℃至40℃之間，且壓力介於1 atm至2 atm之間。
  6. 如申請專利範圍第1項所述之鎂基儲氫材料奈米化方法，其中該奈米級鎂基儲氫材料在100℃至200℃之間，其吸放氫速率大於0.0073 L/s。
  7. 如申請專利範圍第1項所述之鎂基儲氫材料奈米化方法，其中該奈米級鎂基儲氫材料於室溫下的吸放氫速率介於0.0051L/s至0.0073L/s之間。
  8. 如申請專利範圍第1項所述之鎂基儲氫材料奈米化 方法，更包括加入另一高硬度材料進行混合研磨，形成一奈米級高硬度材料與該奈米級鎂基儲氫材料均勻混合，且該奈米級高硬度材料之尺寸小於100nm。
  9. 如申請專利範圍第8項所述之鎂基儲氫材料奈米化方法，其中該高硬度材料係V、Ti、Fe、Co、Nb、Ca、Cs、Mn、Ni、Ca、Ce、Y、La、Pd、Hf、K、Rb、Rh、Ru、Zr、Be、Cr、Ge、Si、Li、上述之混合物、或上述之合金。
  10. 如申請專利範圍第8項所述之鎂基儲氫材料奈米化方法，其中該鎂為主之合金與該高硬度材料之重量比介於100：5至100：30之間。
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SG200904340-7A SG159438A1 (en) 2008-08-25 2009-06-24 Nanotization of magnesium-based hydrogen storage material
JP2009152428A JP5164935B2 (ja) 2008-08-25 2009-06-26 マグネシウム系水素吸蔵材料のナノ化方法
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