JP2013512311A - 結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板 - Google Patents

結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板 Download PDF

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JP2013512311A
JP2013512311A JP2012541134A JP2012541134A JP2013512311A JP 2013512311 A JP2013512311 A JP 2013512311A JP 2012541134 A JP2012541134 A JP 2012541134A JP 2012541134 A JP2012541134 A JP 2012541134A JP 2013512311 A JP2013512311 A JP 2013512311A
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metal chalcogenide
nanoparticles
metal
selenide
sulfide
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Inventor
ケイ ジョンソン リンダ
ラディカ ラドゥ ダニエラ
レイ チェン−ユー
メイジュン ルー
マラジョヴィッチ アイリーナ
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EIDP Inc
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EI Du Pont de Nemours and Co
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B17/00—Sulfur; Compounds thereof
    • C—CHEMISTRY; METALLURGY
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B17/00—Sulfur; Compounds thereof
    • C01B17/20—Methods for preparing sulfides or polysulfides, in general
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
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    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G11/00—Compounds of cadmium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00—Compounds of copper
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
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    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/32—Inkjet printing inks characterised by colouring agents
    • C09D11/322—Pigment inks
    • H—ELECTRICITY
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
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    • C01—INORGANIC CHEMISTRY
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    • C01P2006/40—Electric properties
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/23907—Pile or nap type surface or component
    • Y10T428/23986—With coating, impregnation, or bond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Manufacturing & Machinery (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Powder Metallurgy (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
  • Paints Or Removers (AREA)
  • Photovoltaic Devices (AREA)
JP2012541134A 2009-11-25 2010-11-22 結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板 Withdrawn JP2013512311A (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US26438709P 2009-11-25 2009-11-25
US26438909P 2009-11-25 2009-11-25
US26439309P 2009-11-25 2009-11-25
US26438309P 2009-11-25 2009-11-25
US26440409P 2009-11-25 2009-11-25
US61/264,383 2009-11-25
US61/264,404 2009-11-25
US61/264,389 2009-11-25
US61/264,393 2009-11-25
US61/264,387 2009-11-25
PCT/US2010/057566 WO2011066205A1 (en) 2009-11-25 2010-11-22 Aqueous process for producing crystalline copper chalcogenide nanoparticles, the nanoparticles so-produced, and inks and coated substrates incorporating the nanoparticles

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JP2013512311A true JP2013512311A (ja) 2013-04-11
JP2013512311A5 JP2013512311A5 (https=) 2013-10-03

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US (1) US8470636B2 (https=)
EP (1) EP2504276A1 (https=)
JP (1) JP2013512311A (https=)
KR (1) KR20120098799A (https=)
CN (1) CN102612486A (https=)
WO (1) WO2011066205A1 (https=)

Cited By (8)

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US8999746B2 (en) 2013-08-08 2015-04-07 Tokyo Ohka Kogyo Co., Ltd. Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell
JP2015532611A (ja) * 2012-07-26 2015-11-12 イエムエルアー ウーロプ エスアーエスＩｍｒａ Ｅｕｒｏｐｅ Ｓａｓ 粗大粒結晶化金属カルコゲニド膜、非晶質粒子のコロイド溶液および調製方法
KR20160081102A (ko) * 2014-12-30 2016-07-08 삼성전자주식회사 2차원 물질층을 포함하는 전자소자 및 잉크젯 프린팅을 이용한 전자소자의 제조방법
KR20160149577A (ko) * 2015-06-18 2016-12-28 연세대학교 산학협력단 전이금속 칼코겐화물 구조체 및 그 제조방법
WO2017203938A1 (ja) * 2016-05-25 2017-11-30 株式会社日本触媒 熱電変換材料、熱電変換素子、熱電変換材料用粉体、及び熱電変換材料の製造方法
US9856382B2 (en) 2014-10-30 2018-01-02 Tokyo Ohka Kogyo Co. Ltd. Homogeneous coating solution and production method thereof, light-absorbing layer of solar cell and production method thereof, and solar cell and production method thereof
JP2018142685A (ja) * 2016-05-25 2018-09-13 株式会社日本触媒 熱電変換材料、熱電変換素子、熱電変換材料用粉体、及び熱電変換材料の製造方法
JP2018140934A (ja) * 2014-01-30 2018-09-13 ナノコ テクノロジーズ リミテッド ナトリウム又はアンチモンがドープされたナノ粒子

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US8524524B2 (en) * 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
FR2964044B1 (fr) * 2010-08-26 2012-09-14 Commissariat Energie Atomique Emulsion de metal liquide
US20130264526A1 (en) * 2010-12-03 2013-10-10 E I Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
CN102675960B (zh) * 2011-03-08 2015-08-05 深圳市尊业纳米材料有限公司 一种纳米铜锡合金导电油墨及其制备方法和使用方法
FR2972443B1 (fr) * 2011-03-09 2016-10-21 Univ Paul Sabatier - Toulouse Iii (Ups) Dispersion colloidale d'un materiau a l'etat divise forme de chalcogenure metallique dans un milieu aqueux, materiau a l'etat divise et leurs utilisations
US8771555B2 (en) 2011-05-06 2014-07-08 Neo Solar Power Corp. Ink composition
FR2975223B1 (fr) * 2011-05-10 2016-12-23 Electricite De France Traitement thermique par injection d'un gaz caloporteur.
JP2012250889A (ja) * 2011-06-06 2012-12-20 Toyota Motor Corp 半導体粒子及びその製造方法
US9287434B2 (en) * 2011-06-27 2016-03-15 Kyocera Corporation Method for producing semiconductor layer, method for producing photoelectric conversion device, and semiconductor starting material
US20130037110A1 (en) * 2011-08-10 2013-02-14 International Business Machines Corporation Particle-Based Precursor Formation Method and Photovoltaic Device Thereof
US9368660B2 (en) * 2011-08-10 2016-06-14 International Business Machines Corporation Capping layers for improved crystallization
US8551802B2 (en) * 2011-09-12 2013-10-08 Intermolecular, Inc. Laser annealing for thin film solar cells
JP2013064108A (ja) * 2011-09-16 2013-04-11 Delsolar Co Ltd インク組成物及びその形成方法
CN103842289A (zh) * 2011-09-30 2014-06-04 凸版印刷株式会社 化合物半导体薄膜形成用油墨及其制造方法
ES2402313B1 (es) * 2011-09-30 2014-03-04 Universitat Jaume I De Castellón Tintas para la obtención "in situ" de calcógenos y/o calcogenuros que dan lugar a capas de semiconductores, su obtención y modo de empleo
EP2786419B1 (en) * 2011-11-30 2020-02-12 Konica Minolta Laboratory U.S.A., Inc. Method of manufacturing a photovoltaic device
US20130217211A1 (en) * 2012-02-21 2013-08-22 Aqt Solar, Inc. Controlled-Pressure Process for Production of CZTS Thin-Films
US9573809B2 (en) * 2012-03-30 2017-02-21 Micron Technology, Inc. Method of forming a metal chalcogenide material and methods of forming memory cells including same
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
WO2013172949A1 (en) * 2012-05-14 2013-11-21 E. I. Du Pont De Nemours And Company Dispersible metal chalcogenide nanoparticles
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US8741688B2 (en) * 2012-07-24 2014-06-03 Micron Technology, Inc. Methods of forming a metal chalcogenide material
US8871560B2 (en) * 2012-08-09 2014-10-28 International Business Machines Corporation Plasma annealing of thin film solar cells
WO2014039937A1 (en) * 2012-09-07 2014-03-13 Cornell University Metal chalcogenide synthesis method and applications
JP6008736B2 (ja) * 2012-12-26 2016-10-19 富士フイルム株式会社 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス
JP6093044B2 (ja) 2013-03-04 2017-03-08 ナノコ テクノロジーズ リミテッド 薄膜ソーラーセル用の銅−インジウム−ガリウム−カルコゲナイド・ナノ粒子前駆体
EP2994418B1 (en) * 2013-03-15 2021-02-17 Nanoco Technologies Ltd Cu2znsns4 nanoparticles
KR101788570B1 (ko) 2013-03-15 2017-10-19 나노코 테크놀로지스 리미티드 Cu2XSnY4 나노 입자들
US9634161B2 (en) 2013-05-01 2017-04-25 Delaware State University Nanoscale precursors for synthesis of Fe2(Si,Ge)(S,Se)4 crystalline particles and layers
EP3032576A4 (en) * 2013-08-09 2017-03-15 Japan Advanced Institute of Science and Technology Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device
US20160284901A1 (en) * 2013-08-30 2016-09-29 Korea Institute Of Energy Research Method of manufacturing ci(g)s-based thin film including aging of slurry comprising binary nanoparticles, and ci(g)s-based thin film manufactured thereby
KR101650049B1 (ko) * 2013-09-12 2016-08-22 주식회사 엘지화학 태양전지 광흡수층 제조용 금속 칼코게나이드 나노 입자 및 이의 제조방법
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