CN102612486A - 用于生产结晶铜硫属元素化物纳米颗粒的含水方法、如此生产的纳米颗粒、以及掺入了此类纳米颗粒的油墨和涂覆的基底 - Google Patents

用于生产结晶铜硫属元素化物纳米颗粒的含水方法、如此生产的纳米颗粒、以及掺入了此类纳米颗粒的油墨和涂覆的基底 Download PDF

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CN102612486A
CN102612486A CN2010800521136A CN201080052113A CN102612486A CN 102612486 A CN102612486 A CN 102612486A CN 2010800521136 A CN2010800521136 A CN 2010800521136A CN 201080052113 A CN201080052113 A CN 201080052113A CN 102612486 A CN102612486 A CN 102612486A
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metal chalcogenide
nanoparticles
metal
selenide
crystalline
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Chinese (zh)
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L·K·约翰逊
D·R·拉杜
赖政宇
卢美军
I·马拉约维基
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EIDP Inc
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EI Du Pont de Nemours and Co
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
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    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G11/00—Compounds of cadmium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00—Compounds of copper
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
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    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/32—Inkjet printing inks characterised by colouring agents
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    • H—ELECTRICITY
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
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    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/541—CuInSe2 material PV cells
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    • Y10T428/23986—With coating, impregnation, or bond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Powder Metallurgy (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
  • Paints Or Removers (AREA)
  • Photovoltaic Devices (AREA)
CN2010800521136A 2009-11-25 2010-11-22 用于生产结晶铜硫属元素化物纳米颗粒的含水方法、如此生产的纳米颗粒、以及掺入了此类纳米颗粒的油墨和涂覆的基底 Pending CN102612486A (zh)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US26438709P 2009-11-25 2009-11-25
US26438909P 2009-11-25 2009-11-25
US26439309P 2009-11-25 2009-11-25
US26438309P 2009-11-25 2009-11-25
US26440409P 2009-11-25 2009-11-25
US61/264,383 2009-11-25
US61/264,404 2009-11-25
US61/264,389 2009-11-25
US61/264,393 2009-11-25
US61/264,387 2009-11-25
PCT/US2010/057566 WO2011066205A1 (en) 2009-11-25 2010-11-22 Aqueous process for producing crystalline copper chalcogenide nanoparticles, the nanoparticles so-produced, and inks and coated substrates incorporating the nanoparticles

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CN102612486A true CN102612486A (zh) 2012-07-25

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US (1) US8470636B2 (https=)
EP (1) EP2504276A1 (https=)
JP (1) JP2013512311A (https=)
KR (1) KR20120098799A (https=)
CN (1) CN102612486A (https=)
WO (1) WO2011066205A1 (https=)

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* Cited by examiner, † Cited by third party
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CN103803632A (zh) * 2014-02-28 2014-05-21 上海海事大学 一种碳包覆光热转换纳米材料的制备方法
CN105164047A (zh) * 2013-03-15 2015-12-16 纳米技术有限公司 Cu2ZnSnS4纳米粒子
CN105518872A (zh) * 2013-09-12 2016-04-20 株式会社Lg化学 用于制造太阳能电池的光吸收层的金属硫属化物纳米颗粒及其制备方法
CN106025056A (zh) * 2016-06-12 2016-10-12 电子科技大学 一种锡硫化合物热电材料的制备方法
CN106505114A (zh) * 2016-11-03 2017-03-15 中国科学院兰州化学物理研究所 一种铜锡硫光吸收层薄膜材料的制备方法
CN107919289A (zh) * 2014-01-30 2018-04-17 纳米技术有限公司 用于将Cu(In,Ga)(S,Se)2纳米粒子与钠或锑掺杂的方法
CN108137323A (zh) * 2015-07-28 2018-06-08 奈科斯多特股份公司 性能增强的基于中红外和远红外纳米晶体的光电探测器
CN108249475A (zh) * 2018-03-01 2018-07-06 复旦大学 一种铜铟硫纳米材料的简易制备方法
CN108383150A (zh) * 2018-03-01 2018-08-10 复旦大学 一种硫化锌纳米材料的制备方法
CN108383090A (zh) * 2013-03-15 2018-08-10 纳米技术有限公司 Cu2XSnY4纳米粒子
CN112142097A (zh) * 2020-08-31 2020-12-29 武汉理工大学 三水合锡酸镉及其制备方法和应用
CN113371754A (zh) * 2021-06-23 2021-09-10 石久光学科技发展(北京)有限公司 一种高纯度锡酸镉粉体及其制备方法
CN115348948A (zh) * 2020-03-11 2022-11-15 约翰内斯堡威特沃特斯兰德大学 碱金属四元纳米材料

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8524524B2 (en) * 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
FR2964044B1 (fr) * 2010-08-26 2012-09-14 Commissariat Energie Atomique Emulsion de metal liquide
US20130264526A1 (en) * 2010-12-03 2013-10-10 E I Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
CN102675960B (zh) * 2011-03-08 2015-08-05 深圳市尊业纳米材料有限公司 一种纳米铜锡合金导电油墨及其制备方法和使用方法
FR2972443B1 (fr) * 2011-03-09 2016-10-21 Univ Paul Sabatier - Toulouse Iii (Ups) Dispersion colloidale d'un materiau a l'etat divise forme de chalcogenure metallique dans un milieu aqueux, materiau a l'etat divise et leurs utilisations
US8771555B2 (en) 2011-05-06 2014-07-08 Neo Solar Power Corp. Ink composition
FR2975223B1 (fr) * 2011-05-10 2016-12-23 Electricite De France Traitement thermique par injection d'un gaz caloporteur.
JP2012250889A (ja) * 2011-06-06 2012-12-20 Toyota Motor Corp 半導体粒子及びその製造方法
US9287434B2 (en) * 2011-06-27 2016-03-15 Kyocera Corporation Method for producing semiconductor layer, method for producing photoelectric conversion device, and semiconductor starting material
US20130037110A1 (en) * 2011-08-10 2013-02-14 International Business Machines Corporation Particle-Based Precursor Formation Method and Photovoltaic Device Thereof
US9368660B2 (en) * 2011-08-10 2016-06-14 International Business Machines Corporation Capping layers for improved crystallization
US8551802B2 (en) * 2011-09-12 2013-10-08 Intermolecular, Inc. Laser annealing for thin film solar cells
JP2013064108A (ja) * 2011-09-16 2013-04-11 Delsolar Co Ltd インク組成物及びその形成方法
CN103842289A (zh) * 2011-09-30 2014-06-04 凸版印刷株式会社 化合物半导体薄膜形成用油墨及其制造方法
ES2402313B1 (es) * 2011-09-30 2014-03-04 Universitat Jaume I De Castellón Tintas para la obtención "in situ" de calcógenos y/o calcogenuros que dan lugar a capas de semiconductores, su obtención y modo de empleo
EP2786419B1 (en) * 2011-11-30 2020-02-12 Konica Minolta Laboratory U.S.A., Inc. Method of manufacturing a photovoltaic device
US20130217211A1 (en) * 2012-02-21 2013-08-22 Aqt Solar, Inc. Controlled-Pressure Process for Production of CZTS Thin-Films
US9573809B2 (en) * 2012-03-30 2017-02-21 Micron Technology, Inc. Method of forming a metal chalcogenide material and methods of forming memory cells including same
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
WO2013172949A1 (en) * 2012-05-14 2013-11-21 E. I. Du Pont De Nemours And Company Dispersible metal chalcogenide nanoparticles
WO2014009815A2 (en) 2012-07-09 2014-01-16 Nanoco Technologies, Ltd. Group xiii selenide nanoparticles
US8741688B2 (en) * 2012-07-24 2014-06-03 Micron Technology, Inc. Methods of forming a metal chalcogenide material
FR2993792B1 (fr) * 2012-07-26 2017-09-15 Imra Europe Sas Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation.
US8871560B2 (en) * 2012-08-09 2014-10-28 International Business Machines Corporation Plasma annealing of thin film solar cells
WO2014039937A1 (en) * 2012-09-07 2014-03-13 Cornell University Metal chalcogenide synthesis method and applications
JP6008736B2 (ja) * 2012-12-26 2016-10-19 富士フイルム株式会社 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス
JP6093044B2 (ja) 2013-03-04 2017-03-08 ナノコ テクノロジーズ リミテッド 薄膜ソーラーセル用の銅−インジウム−ガリウム−カルコゲナイド・ナノ粒子前駆体
US9634161B2 (en) 2013-05-01 2017-04-25 Delaware State University Nanoscale precursors for synthesis of Fe2(Si,Ge)(S,Se)4 crystalline particles and layers
US8999746B2 (en) 2013-08-08 2015-04-07 Tokyo Ohka Kogyo Co., Ltd. Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell
EP3032576A4 (en) * 2013-08-09 2017-03-15 Japan Advanced Institute of Science and Technology Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device
US20160284901A1 (en) * 2013-08-30 2016-09-29 Korea Institute Of Energy Research Method of manufacturing ci(g)s-based thin film including aging of slurry comprising binary nanoparticles, and ci(g)s-based thin film manufactured thereby
US10888836B2 (en) * 2014-07-25 2021-01-12 Chemical and Metal Technologies LLC Extraction of target materials using CZTS sorbent
KR101708282B1 (ko) * 2014-09-29 2017-02-20 이화여자대학교 산학협력단 ＣＺＴＳｅ계 박막을 이용한 태양전지 및 이의 제조 방법
JP6554332B2 (ja) 2014-10-30 2019-07-31 東京応化工業株式会社 均一系塗布液及びその製造方法、太陽電池用光吸収層及びその製造方法、並びに太陽電池及びその製造方法
KR102412965B1 (ko) * 2014-12-30 2022-06-24 삼성전자주식회사 2차원 물질층을 포함하는 전자소자 및 잉크젯 프린팅을 이용한 전자소자의 제조방법
WO2016115416A1 (en) * 2015-01-15 2016-07-21 The Trustees Of Columbia University In The City Of New York Methods of producing metal suflides, metal selenides, and metal sulfides/selenides having controlled architectures using kinetic control
KR101708260B1 (ko) * 2015-06-18 2017-02-20 연세대학교 산학협력단 전이금속 칼코겐화물 구조체 및 그 제조방법
KR102613046B1 (ko) * 2015-10-06 2023-12-12 삼성전자주식회사 금속 칼코게나이드 나노입자 및 그 제조방법
US10578572B2 (en) 2016-01-19 2020-03-03 Invensense, Inc. CMOS integrated microheater for a gas sensor device
JP6793087B2 (ja) * 2016-05-25 2020-12-02 株式会社日本触媒 熱電変換材料、熱電変換素子、熱電変換材料用粉体、及び熱電変換材料の製造方法
US11631794B2 (en) * 2016-05-25 2023-04-18 Nippon Shokubai Co., Ltd. Thermoelectric material, thermoelectric device, powder for thermoelectric material, and method for producing thermoelectric material
US10217888B2 (en) * 2016-10-06 2019-02-26 International Business Machines Corporation Solution-phase inclusion of silver into chalcogenide semiconductor inks
WO2018065156A1 (en) * 2016-10-07 2018-04-12 Haldor Topsøe A/S KESTERITE MATERIAL OF CZTS, CZTSe OR CZTSSe TYPE
US10383967B2 (en) 2016-11-30 2019-08-20 Invensense, Inc. Substance sensing with tracers
KR101874227B1 (ko) * 2017-01-18 2018-08-02 한양대학교 에리카산학협력단 구리 칼코지나이드 광 흡수체 및 광 흡수 필름, 및 그들의 제조 방법.
KR102038552B1 (ko) * 2017-11-16 2019-10-30 한국세라믹기술원 전이금속 칼코겐화합물을 이용한 전계 효과형 트랜지스터의 제조 방법
WO2019228620A1 (en) * 2018-05-30 2019-12-05 Toyota Motor Europe Inks comprising nanoparticles for high-performance inkjet-printed optoelectronics
RU2695208C1 (ru) * 2018-07-17 2019-07-22 Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской академии наук (ИПХФ РАН) Способ получения монозеренных кестеритных порошков
RU2718124C1 (ru) * 2019-06-10 2020-03-30 Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской Академии наук (ФГБУН ИПХФ РАН) Способ получения монозеренных кестеритных порошков из тройных халькогенидов меди и олова и соединений цинка
CN113013314B (zh) * 2019-12-20 2022-12-13 中国科学院上海硅酸盐研究所 一种p型高性能Cu-Sn-S类金刚石结构热电材料及其制备方法
US11492547B2 (en) 2020-06-04 2022-11-08 UbiQD, Inc. Low-PH nanoparticles and ligands
CN111755323B (zh) * 2020-07-07 2023-07-21 内蒙古大学 一种铜锌锡硫太阳电池吸收层薄膜的制备方法
CN112279293B (zh) * 2020-11-02 2023-08-25 贵州理工学院 一种硫化铜纳米材料的制备方法
CN113517370B (zh) * 2021-06-11 2022-10-14 上海应用技术大学 一种异质构型太阳能电池结构及其制备方法与应用
CN114436318B (zh) * 2022-01-07 2023-10-31 安徽师范大学 一种水相合成制备单分散Cu2-xS纳米晶的方法
CN114759140B (zh) * 2022-04-13 2025-09-09 西北师范大学 一种铜锡硫（cts）忆阻器及其制备方法
CN114933327B (zh) * 2022-06-13 2023-12-01 佛山(华南)新材料研究院 一种制氢材料及其制备方法、应用
KR102889327B1 (ko) * 2022-11-29 2025-11-24 나노씨엠에스(주) 황화구리 나노 입자의 제조방법 및 이에 의하여 제조된 황화구리 나노 입자를 포함하는 근적외선 흡수제

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2921661A1 (fr) * 2007-10-01 2009-04-03 Centre Nat Rech Scient Solide hybride organique inorganique a surface modifiee.
WO2009076322A2 (en) * 2007-12-06 2009-06-18 Craig Leidholm Methods and devices for processing a precursor layer in a group via environment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2921661A1 (fr) * 2007-10-01 2009-04-03 Centre Nat Rech Scient Solide hybride organique inorganique a surface modifiee.
WO2009076322A2 (en) * 2007-12-06 2009-06-18 Craig Leidholm Methods and devices for processing a precursor layer in a group via environment

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHET STEINHAGEN ET AL.: "Synthesis of Cu2ZnSnS4 Nanocrystals for Use in Low-Cost Photovaltaics", 《JOURNAL OF AMERICAN CHEMICAL SOCIETY》 *
QIJIE GUO ET AL.: "Synthesis of Cu2ZnSnS4 Nanocrystal Ink and Its Use for Solar Cells", 《JOURNAL OF AMERICAN CHEMICAL SOCIETY》 *
SHANNON C.RIHA ET AL.: "Solution-Based Synthesis and Characterization of Cu2ZnSnS4 Nanocrystals", 《JOURNAL OF AMERICAN CHEMICAL SOCIETY》 *

Cited By (18)

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Publication number Priority date Publication date Assignee Title
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CN108383090A (zh) * 2013-03-15 2018-08-10 纳米技术有限公司 Cu2XSnY4纳米粒子
US10170649B2 (en) 2013-09-12 2019-01-01 Lg Chem, Ltd. Metal chalcogenide nanoparticles for preparing light absorption layer of solar cells and method of preparing the same
CN105518872A (zh) * 2013-09-12 2016-04-20 株式会社Lg化学 用于制造太阳能电池的光吸收层的金属硫属化物纳米颗粒及其制备方法
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CN108137323A (zh) * 2015-07-28 2018-06-08 奈科斯多特股份公司 性能增强的基于中红外和远红外纳米晶体的光电探测器
CN108137323B (zh) * 2015-07-28 2021-06-15 奈科斯多特股份公司 性能增强的基于中红外和远红外纳米晶体的光电探测器
CN106025056A (zh) * 2016-06-12 2016-10-12 电子科技大学 一种锡硫化合物热电材料的制备方法
CN106505114A (zh) * 2016-11-03 2017-03-15 中国科学院兰州化学物理研究所 一种铜锡硫光吸收层薄膜材料的制备方法
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CN108249475B (zh) * 2018-03-01 2020-10-30 复旦大学 一种铜铟硫纳米材料的简易制备方法
CN108383150A (zh) * 2018-03-01 2018-08-10 复旦大学 一种硫化锌纳米材料的制备方法
CN115348948A (zh) * 2020-03-11 2022-11-15 约翰内斯堡威特沃特斯兰德大学 碱金属四元纳米材料
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CN113371754A (zh) * 2021-06-23 2021-09-10 石久光学科技发展(北京)有限公司 一种高纯度锡酸镉粉体及其制备方法

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