JP2013511142A - 保護ダイオード構造を備える薄膜半導体デバイス、および薄膜半導体デバイスを製造する方法 - Google Patents

保護ダイオード構造を備える薄膜半導体デバイス、および薄膜半導体デバイスを製造する方法 Download PDF

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JP2013511142A
JP2013511142A JP2012538335A JP2012538335A JP2013511142A JP 2013511142 A JP2013511142 A JP 2013511142A JP 2012538335 A JP2012538335 A JP 2012538335A JP 2012538335 A JP2012538335 A JP 2012538335A JP 2013511142 A JP2013511142 A JP 2013511142A
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JP2013511142A5 (enExample
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マンフレッド シューベック
ジークフリート ヘルマン
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

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JP2012538335A 2009-11-13 2010-11-11 保護ダイオード構造を備える薄膜半導体デバイス、および薄膜半導体デバイスを製造する方法 Pending JP2013511142A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009053064.9 2009-11-13
DE102009053064A DE102009053064A1 (de) 2009-11-13 2009-11-13 Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements
PCT/EP2010/067278 WO2011058094A1 (de) 2009-11-13 2010-11-11 Dünnfilm-halbleiterbauelement mit schutzdiodenstruktur und verfahren zur herstellung eines dünnfilm-halbleiterbauelements

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JP2013511142A true JP2013511142A (ja) 2013-03-28
JP2013511142A5 JP2013511142A5 (enExample) 2013-09-26

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US (1) US20120223416A1 (enExample)
EP (1) EP2499668B9 (enExample)
JP (1) JP2013511142A (enExample)
KR (1) KR20120099720A (enExample)
CN (1) CN102687271B (enExample)
DE (1) DE102009053064A1 (enExample)
WO (1) WO2011058094A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9171995B2 (en) 2011-05-30 2015-10-27 Everlight Electronics Co., Ltd. Flip chip type light emitting diode and manufacturing method thereof
KR20150142235A (ko) * 2014-06-11 2015-12-22 엘지이노텍 주식회사 발광소자 및 조명시스템
KR20160054667A (ko) * 2014-11-06 2016-05-17 삼성전자주식회사 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지
KR20160064108A (ko) * 2013-09-30 2016-06-07 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 발광 다이오드를 포함하는 광전자 디바이스 제조 방법
KR20160077809A (ko) * 2014-12-24 2016-07-04 엘지이노텍 주식회사 발광소자 및 조명시스템
JP2017500731A (ja) * 2013-10-28 2017-01-05 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品およびその製造方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
WO2013021305A1 (en) * 2011-08-10 2013-02-14 Koninklijke Philips Electronics N.V. Wafer level processing of leds using carrier wafer
US10020431B2 (en) 2012-03-30 2018-07-10 Lumileds Llc Sealed semiconductor light emitting device
DE102012104494A1 (de) * 2012-05-24 2013-11-28 Epcos Ag Leuchtdiodenvorrichtung
DE102012108627B4 (de) * 2012-09-14 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Halbleitervorrichtung und Trägerverbund
KR101815486B1 (ko) * 2012-09-27 2018-01-05 오스람 옵토 세미컨덕터스 게엠베하 보호 회로를 갖는 광전자 컴포넌트
DE102012217932B4 (de) * 2012-10-01 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit Schutzschaltung
DE102012217533A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012112988A1 (de) * 2012-12-21 2014-07-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Scheinwerfer
US10386559B2 (en) * 2013-03-29 2019-08-20 Signify Holding B.V. Light emitting device comprising wavelength converter
DE102013105631A1 (de) * 2013-05-31 2014-12-04 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil
DE102013110853B4 (de) * 2013-10-01 2020-12-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterchips
KR102171221B1 (ko) * 2014-03-12 2020-10-28 삼성전자주식회사 수직형 불휘발성 메모리 장치 및 그 제조 방법
DE102014103828A1 (de) 2014-03-20 2015-09-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen
DE102015104185A1 (de) * 2015-03-20 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102015111485A1 (de) * 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
FR3102298B1 (fr) * 2019-10-16 2022-07-29 Aledia Procede de protection d'un dispositif optoelectronique contre les decharges electrostatiques
CN115188332A (zh) * 2020-07-30 2022-10-14 华为技术有限公司 一种显示模组、电子设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015815A (ja) * 1999-04-28 2001-01-19 Sanken Electric Co Ltd 半導体発光装置
JP2002359402A (ja) * 2001-03-29 2002-12-13 Lumileds Lighting Us Llc 高抵抗性基層の上に形成されたモノリシック直列／並列ｌｅｄアレイ
JP2004193165A (ja) * 2002-12-06 2004-07-08 Seiwa Electric Mfg Co Ltd 発光装置
JP2007511065A (ja) * 2003-11-04 2007-04-26 松下電器産業株式会社 半導体発光装置、照明モジュール、照明装置、および半導体発光装置の製造方法
JP2008042211A (ja) * 2006-08-08 2008-02-21 Lg Electronics Inc 発光素子パッケージ及びその製造方法
JP2008235792A (ja) * 2007-03-23 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3686569B2 (ja) * 2000-03-02 2005-08-24 シャープ株式会社 半導体発光装置及びそれを用いた表示装置
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
DE102004005269B4 (de) * 2003-11-28 2005-09-29 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
US7408203B2 (en) * 2004-04-17 2008-08-05 Lg Electronics Inc. Light emitting device and fabrication method thereof and light emitting system using the same
JP4996463B2 (ja) * 2004-06-30 2012-08-08 クリー インコーポレイテッド 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
TWI422044B (zh) * 2005-06-30 2014-01-01 克立公司 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
US8044412B2 (en) * 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
JP4978014B2 (ja) * 2006-01-30 2012-07-18 サンケン電気株式会社 半導体発光装置及びその製造方法
KR100746783B1 (ko) * 2006-02-28 2007-08-06 엘지전자 주식회사 발광소자 패키지 및 그 제조방법
TWI303872B (en) * 2006-03-13 2008-12-01 Ind Tech Res Inst High power light emitting device assembly with esd preotection ability and the method of manufacturing the same
CN100446288C (zh) * 2006-08-01 2008-12-24 金芃 通孔垂直结构的半导体芯片及其制造方法
DE102007030129A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
JP4585561B2 (ja) * 2007-09-04 2010-11-24 株式会社東芝 半導体装置の製造方法
US7732829B2 (en) * 2008-02-05 2010-06-08 Hymite A/S Optoelectronic device submount
JP5229034B2 (ja) * 2008-03-28 2013-07-03 サンケン電気株式会社 発光装置
DE102008022942A1 (de) * 2008-05-09 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015815A (ja) * 1999-04-28 2001-01-19 Sanken Electric Co Ltd 半導体発光装置
JP2002359402A (ja) * 2001-03-29 2002-12-13 Lumileds Lighting Us Llc 高抵抗性基層の上に形成されたモノリシック直列／並列ｌｅｄアレイ
JP2004193165A (ja) * 2002-12-06 2004-07-08 Seiwa Electric Mfg Co Ltd 発光装置
JP2007511065A (ja) * 2003-11-04 2007-04-26 松下電器産業株式会社 半導体発光装置、照明モジュール、照明装置、および半導体発光装置の製造方法
JP2008042211A (ja) * 2006-08-08 2008-02-21 Lg Electronics Inc 発光素子パッケージ及びその製造方法
JP2008235792A (ja) * 2007-03-23 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9171995B2 (en) 2011-05-30 2015-10-27 Everlight Electronics Co., Ltd. Flip chip type light emitting diode and manufacturing method thereof
KR20160064108A (ko) * 2013-09-30 2016-06-07 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 발광 다이오드를 포함하는 광전자 디바이스 제조 방법
KR102237398B1 (ko) 2013-09-30 2021-04-07 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 발광 다이오드를 포함하는 광전자 디바이스 제조 방법
JP2017500731A (ja) * 2013-10-28 2017-01-05 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品およびその製造方法
KR20150142235A (ko) * 2014-06-11 2015-12-22 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102181404B1 (ko) 2014-06-11 2020-11-23 엘지이노텍 주식회사 발광소자 및 조명시스템
KR20160054667A (ko) * 2014-11-06 2016-05-17 삼성전자주식회사 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지
KR102227769B1 (ko) * 2014-11-06 2021-03-16 삼성전자주식회사 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지
KR20160077809A (ko) * 2014-12-24 2016-07-04 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102221112B1 (ko) 2014-12-24 2021-02-26 엘지이노텍 주식회사 발광소자 및 조명시스템

Also Published As

Publication number Publication date
CN102687271B (zh) 2016-01-20
EP2499668B9 (de) 2018-04-18
EP2499668B1 (de) 2018-01-03
WO2011058094A1 (de) 2011-05-19
KR20120099720A (ko) 2012-09-11
US20120223416A1 (en) 2012-09-06
CN102687271A (zh) 2012-09-19
DE102009053064A1 (de) 2011-05-19
EP2499668A1 (de) 2012-09-19

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