CN102687271B - 具有保护二极管结构的薄膜半导体器件和用于制造薄膜半导体器件的方法 - Google Patents

具有保护二极管结构的薄膜半导体器件和用于制造薄膜半导体器件的方法 Download PDF

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Publication number
CN102687271B
CN102687271B CN201080051515.4A CN201080051515A CN102687271B CN 102687271 B CN102687271 B CN 102687271B CN 201080051515 A CN201080051515 A CN 201080051515A CN 102687271 B CN102687271 B CN 102687271B
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semiconductor device
thin
semiconductor body
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CN102687271A (zh
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曼弗雷德·朔伊贝克
西格弗里德·赫尔曼
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

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  • Semiconductor Integrated Circuits (AREA)
  • Led Device Packages (AREA)
CN201080051515.4A 2009-11-13 2010-11-11 具有保护二极管结构的薄膜半导体器件和用于制造薄膜半导体器件的方法 Active CN102687271B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009053064.9 2009-11-13
DE102009053064A DE102009053064A1 (de) 2009-11-13 2009-11-13 Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements
PCT/EP2010/067278 WO2011058094A1 (de) 2009-11-13 2010-11-11 Dünnfilm-halbleiterbauelement mit schutzdiodenstruktur und verfahren zur herstellung eines dünnfilm-halbleiterbauelements

Publications (2)

Publication Number Publication Date
CN102687271A CN102687271A (zh) 2012-09-19
CN102687271B true CN102687271B (zh) 2016-01-20

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Country Link
US (1) US20120223416A1 (enExample)
EP (1) EP2499668B9 (enExample)
JP (1) JP2013511142A (enExample)
KR (1) KR20120099720A (enExample)
CN (1) CN102687271B (enExample)
DE (1) DE102009053064A1 (enExample)
WO (1) WO2011058094A1 (enExample)

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DE102012104494A1 (de) * 2012-05-24 2013-11-28 Epcos Ag Leuchtdiodenvorrichtung
DE102012108627B4 (de) * 2012-09-14 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Halbleitervorrichtung und Trägerverbund
KR101815486B1 (ko) * 2012-09-27 2018-01-05 오스람 옵토 세미컨덕터스 게엠베하 보호 회로를 갖는 광전자 컴포넌트
DE102012217932B4 (de) * 2012-10-01 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit Schutzschaltung
DE102012217533A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012112988A1 (de) * 2012-12-21 2014-07-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Scheinwerfer
US10386559B2 (en) * 2013-03-29 2019-08-20 Signify Holding B.V. Light emitting device comprising wavelength converter
DE102013105631A1 (de) * 2013-05-31 2014-12-04 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil
FR3011383B1 (fr) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes
DE102013110853B4 (de) * 2013-10-01 2020-12-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterchips
DE102013221788B4 (de) * 2013-10-28 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Kontaktelements und eines optoelektronischen Bauelements
KR102171221B1 (ko) * 2014-03-12 2020-10-28 삼성전자주식회사 수직형 불휘발성 메모리 장치 및 그 제조 방법
DE102014103828A1 (de) 2014-03-20 2015-09-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen
KR102181404B1 (ko) * 2014-06-11 2020-11-23 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102227769B1 (ko) * 2014-11-06 2021-03-16 삼성전자주식회사 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지
KR102221112B1 (ko) * 2014-12-24 2021-02-26 엘지이노텍 주식회사 발광소자 및 조명시스템
DE102015104185A1 (de) * 2015-03-20 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102015111485A1 (de) * 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
FR3102298B1 (fr) * 2019-10-16 2022-07-29 Aledia Procede de protection d'un dispositif optoelectronique contre les decharges electrostatiques
CN115188332A (zh) * 2020-07-30 2022-10-14 华为技术有限公司 一种显示模组、电子设备

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Also Published As

Publication number Publication date
EP2499668B9 (de) 2018-04-18
EP2499668B1 (de) 2018-01-03
WO2011058094A1 (de) 2011-05-19
KR20120099720A (ko) 2012-09-11
JP2013511142A (ja) 2013-03-28
US20120223416A1 (en) 2012-09-06
CN102687271A (zh) 2012-09-19
DE102009053064A1 (de) 2011-05-19
EP2499668A1 (de) 2012-09-19

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