JP5890498B2 - 放射放出半導体チップ - Google Patents
放射放出半導体チップ Download PDFInfo
- Publication number
- JP5890498B2 JP5890498B2 JP2014193756A JP2014193756A JP5890498B2 JP 5890498 B2 JP5890498 B2 JP 5890498B2 JP 2014193756 A JP2014193756 A JP 2014193756A JP 2014193756 A JP2014193756 A JP 2014193756A JP 5890498 B2 JP5890498 B2 JP 5890498B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- region
- semiconductor chip
- connection layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 368
- 230000005855 radiation Effects 0.000 title claims description 44
- 230000001681 protective effect Effects 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000969 carrier Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 266
- 239000000463 material Substances 0.000 description 25
- 239000002800 charge carrier Substances 0.000 description 9
- 230000006378 damage Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 238000003486 chemical etching Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000003631 wet chemical etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000005309 stochastic process Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
− 放射を発生させるエピタキシャル積層体の第1の主領域(キャリア要素(例えばキャリア)に面している主領域)に、反射層が堆積または形成されており、この反射層が、エピタキシャル積層体において発生する電磁放射の少なくとも一部分を、エピタキシャル積層体中に反射する。
− エピタキシャル積層体の厚さは、20μm以下の範囲、特に10μm以下の範囲である。
− エピタキシャル積層体は、少なくとも一領域が混合構造(intermixing structure)である少なくとも1層の半導体層を含んでおり、この混合構造によって、理想的にはエピタキシャル積層体における近似的に光のエルゴード分布につながり、すなわち、この混合構造は、実質的にエルゴード的確率過程である散乱挙動を有する。
Claims (14)
- キャリア(5)と、半導体積層体を有する半導体ボディ(2)と、を備えている放射放出半導体チップ(1)であって、
− 前記半導体積層体を有する前記半導体ボディ(2)に、放出領域(23)および保護ダイオード領域(24)が形成されており、
− 前記半導体積層体が、放射を発生させるために設けられている活性領域(20)を備えており、前記活性領域が、第1の半導体層(21)と第2の半導体層(22)との間に配置されており、
− 前記第1の半導体層(21)が、前記キャリア(5)とは反対側の前記活性領域(20)の面に配置されており、
− 前記放出領域(23)が、前記活性領域(20)を貫いて延在する凹部(25)を有し、
− 前記第1の半導体層(21)が、前記放出領域(23)において、第1の接続層(31)に導電接続されており、前記第1の接続層(31)が、前記第1の半導体層(21)から前記凹部(25)の中を前記キャリア(5)の方向に延在しており、
− 前記第1の接続層(31)が、前記保護ダイオード領域(24)において、前記第2の半導体層(22)に導電接続されており、
− 前記第2の半導体層(22)が、前記放出領域(23)において、第2の接続層(32)に導電接続されており、
− 前記第2の接続層(32)は、部分的に前記半導体ボディ(2)と前記キャリア(5)との間に延在し、
前記第2の接続層が、前記保護ダイオード領域の前記第1の半導体層に導電接続されている、
放射放出半導体チップ。 - 前記放出領域と前記保護ダイオード領域が、それぞれの順方向に関して互いに逆並列に接続されている、
請求項1に記載の半導体チップ。 - 前記放出領域および前記保護ダイオード領域が、横方向に互いに並んで配置されている、前記半導体ボディの領域である、
請求項1または請求項2に記載の半導体チップ。 - 前記半導体ボディが前記キャリアに接着結合されており、前記第1の接続層が、部分的に前記半導体ボディと前記キャリアとの間に延在している、
請求項1から請求項3のいずれかに記載の半導体チップ。 - 前記第2の接続層が、部分的に前記放出領域と前記第1の接続層との間に延在している、
請求項1から請求項4のいずれかに記載の半導体チップ。 - 前記保護ダイオード領域がさらなる凹部(26)を有し、前記第2の接続層が、前記第1の半導体層から前記さらなる凹部の中を前記キャリアの方向に延在している、
請求項1から請求項5のいずれかに記載の半導体チップ。 - 前記第2の接続層を外部から接触接続するために設けられているコンタクト(42)、
を有する、
請求項1から請求項6のいずれかに記載の半導体チップ。 - 前記コンタクトがコンタクト層(420)によって形成されており、前記コンタクト層(420)の少なくとも一部分が、前記保護ダイオード領域を横方向に画定している側面領域(240)を覆っている、
請求項7に記載の半導体チップ。 - 前記コンタクトが、前記半導体チップの平面視において、前記保護ダイオード領域を少なくとも部分的に覆っている、
請求項8に記載の半導体チップ。 - 前記コンタクトおよび前記保護ダイオード領域が、前記半導体チップの平面視において互いに並んで配置されている、
請求項7に記載の半導体チップ。 - 前記第1の接続層は、前記半導体チップの平面視において前記キャリアを完全に覆っている、
請求項1から請求項10のいずれかに記載の半導体チップ。 - 複数の放射放出半導体チップ(1)を製造する方法であって、
a)放射を発生させるために設けられる活性領域(20)を有する半導体積層体(2)を形成するステップであって、前記活性領域が、第1の半導体層(21)と第2の半導体層(22)との間に配置されている、前記ステップと、
b)前記第2の半導体層(22)および前記活性領域(20)を貫いて延在する複数の凹部(25)を形成するステップと、
c)前記半導体積層体(2)上に第1の接続層(31)を形成するステップであって、前記第1の接続層(31)が、前記凹部(25)において、前記第1の半導体層(21)に導電接続されており、前記第1の接続層(31)が、部分的に前記第2の半導体層(22)に導電接続されている、前記ステップと、
d)前記半導体積層体(2)とキャリア(5)とを備えている集合体(9)を形成するステップと、
e)前記半導体積層体(2)から複数の放出領域(23)および複数の保護ダイオード領域(24)を形成するステップであって、前記放出領域(23)それぞれが少なくとも1つの凹部(25)を有し、前記保護ダイオード領域(24)それぞれにおいて、前記第1の接続層(31)が前記第2の半導体層(22)に導電接続されている、前記ステップと、
f)前記集合体(9)を複数の半導体チップ(1)に個片化するステップと、
を含んでおり、
− 半導体チップ(1)それぞれが少なくとも1つの放出領域(23)と少なくとも1つの保護ダイオード領域(24)とを有し、
− 前記第2の半導体層(22)が、前記放出領域(23)において、第2の接続層(32)に導電接続されており、
− 前記第2の接続層(32)は、部分的に前記半導体ボディ(2)と前記キャリア(5)との間に延在し、
前記第2の接続層が、前記保護ダイオード領域の前記第1の半導体層に導電接続されている、
方法。 - ステップe)の前に、前記半導体積層体のための成長基板(8)を少なくとも部分的に除去する、
請求項12に記載の方法。 - 請求項1から請求項11のいずれかに記載の複数の半導体チップが製造される、
請求項12または請求項13に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008059580.2 | 2008-11-28 | ||
DE102008059580 | 2008-11-28 | ||
DE102009006177A DE102009006177A1 (de) | 2008-11-28 | 2009-01-26 | Strahlungsemittierender Halbleiterchip |
DE102009006177.0 | 2009-01-26 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011537839A Division JP5669746B2 (ja) | 2008-11-28 | 2009-10-29 | 放射放出半導体チップ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015015497A JP2015015497A (ja) | 2015-01-22 |
JP5890498B2 true JP5890498B2 (ja) | 2016-03-22 |
Family
ID=42134160
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011537839A Active JP5669746B2 (ja) | 2008-11-28 | 2009-10-29 | 放射放出半導体チップ |
JP2014193756A Active JP5890498B2 (ja) | 2008-11-28 | 2014-09-24 | 放射放出半導体チップ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011537839A Active JP5669746B2 (ja) | 2008-11-28 | 2009-10-29 | 放射放出半導体チップ |
Country Status (8)
Country | Link |
---|---|
US (2) | US9054016B2 (ja) |
EP (1) | EP2351079B1 (ja) |
JP (2) | JP5669746B2 (ja) |
KR (1) | KR101679092B1 (ja) |
CN (1) | CN102227807B (ja) |
DE (1) | DE102009006177A1 (ja) |
TW (1) | TWI433309B (ja) |
WO (1) | WO2010060404A1 (ja) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008022942A1 (de) * | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
DE102008051048A1 (de) * | 2008-10-09 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper |
DE102009006177A1 (de) * | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
DE102010024079A1 (de) | 2010-06-17 | 2011-12-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
KR101154709B1 (ko) * | 2010-07-28 | 2012-06-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템 |
DE102010032813A1 (de) | 2010-07-30 | 2012-02-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
DE102010034665A1 (de) * | 2010-08-18 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
DE102010046792A1 (de) * | 2010-09-28 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
DE102010056056A1 (de) * | 2010-12-23 | 2012-06-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines elektrischen Anschlussträgers |
JP5777879B2 (ja) * | 2010-12-27 | 2015-09-09 | ローム株式会社 | 発光素子、発光素子ユニットおよび発光素子パッケージ |
KR20120099318A (ko) * | 2011-01-26 | 2012-09-10 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR101762324B1 (ko) | 2011-01-27 | 2017-07-27 | 엘지이노텍 주식회사 | 발광 소자 |
US8536594B2 (en) * | 2011-01-28 | 2013-09-17 | Micron Technology, Inc. | Solid state lighting devices with reduced dimensions and methods of manufacturing |
DE102011011378A1 (de) | 2011-02-16 | 2012-08-16 | Osram Opto Semiconductors Gmbh | Trägersubstrat und Verfahren zur Herstellung von Halbleiterchips |
WO2012159615A2 (de) | 2011-05-25 | 2012-11-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip |
KR20130021300A (ko) * | 2011-08-22 | 2013-03-05 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지, 및 라이트 유닛 |
US9490239B2 (en) | 2011-08-31 | 2016-11-08 | Micron Technology, Inc. | Solid state transducers with state detection, and associated systems and methods |
US8809897B2 (en) | 2011-08-31 | 2014-08-19 | Micron Technology, Inc. | Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods |
DE102011112000B4 (de) * | 2011-08-31 | 2023-11-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip |
US8723206B2 (en) | 2011-09-09 | 2014-05-13 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device with contact hole passing through active layer |
EP2573827B1 (en) * | 2011-09-23 | 2018-04-18 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
DE102011116232B4 (de) * | 2011-10-17 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
DE102011054891B4 (de) * | 2011-10-28 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds |
CN103094274B (zh) * | 2011-11-01 | 2016-02-10 | 三星电子株式会社 | 半导体发光装置 |
DE102012108763B4 (de) * | 2012-09-18 | 2023-02-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer halbleiterchip und lichtquelle mit dem optoelektronischen halbleiterchip |
DE102012109028A1 (de) | 2012-09-25 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102012110909A1 (de) * | 2012-11-13 | 2014-05-15 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip und Verfahren zum Betreiben eines Halbleiterchips |
KR20140098564A (ko) * | 2013-01-31 | 2014-08-08 | 삼성전자주식회사 | 반도체 발광소자 |
KR102080775B1 (ko) | 2013-06-19 | 2020-02-24 | 엘지이노텍 주식회사 | 발광소자 |
TWI661578B (zh) | 2013-06-20 | 2019-06-01 | 晶元光電股份有限公司 | 發光裝置及發光陣列 |
FR3011381B1 (fr) * | 2013-09-30 | 2017-12-08 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
DE102013112881A1 (de) | 2013-11-21 | 2015-05-21 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102014105188A1 (de) * | 2014-04-11 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Halbleiterchip, optoelektronisches Bauelement mit Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
DE102014116512A1 (de) * | 2014-11-12 | 2016-05-12 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Vorrichtung mit einem optoelektronischen Halbleiterbauelement |
JP6351531B2 (ja) | 2015-03-23 | 2018-07-04 | 株式会社東芝 | 半導体発光素子 |
DE102015108056A1 (de) * | 2015-05-21 | 2016-11-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
KR102388284B1 (ko) * | 2015-05-26 | 2022-04-19 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
DE102015114010A1 (de) * | 2015-08-24 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Verfahren zum Betrieb eines optoelektronischen Bauelements |
KR102378952B1 (ko) * | 2015-08-27 | 2022-03-25 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 이를 포함하는 발광소자 패키지 |
DE102015116865A1 (de) | 2015-10-05 | 2017-04-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterchips und Halbleiterchip |
KR102463323B1 (ko) * | 2015-11-03 | 2022-11-04 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 발광소자 패키지 |
CN105896739A (zh) * | 2016-05-19 | 2016-08-24 | 吴永良 | 一种带无线充电的门锁装置 |
DE102016114550B4 (de) * | 2016-08-05 | 2021-10-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement und Verfahren zur Herstellung von Bauelementen |
DE102017104735B4 (de) | 2017-03-07 | 2021-09-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender Halbleiterchip |
DE102017113949A1 (de) | 2017-06-23 | 2018-12-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
DE102018119688B4 (de) * | 2018-08-14 | 2024-06-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements |
JP6909983B2 (ja) * | 2018-11-29 | 2021-07-28 | 日亜化学工業株式会社 | 発光素子 |
US11508715B2 (en) * | 2020-04-24 | 2022-11-22 | Creeled, Inc. | Light-emitting diode chip with electrical overstress protection |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
KR100431760B1 (ko) | 2001-08-08 | 2004-05-17 | 삼성전기주식회사 | AlGaInN계 반도체 엘이디(LED) 소자 및 그 제조 방법 |
US6828596B2 (en) * | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
KR101052139B1 (ko) * | 2002-08-01 | 2011-07-26 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치 |
DE10308866A1 (de) * | 2003-02-28 | 2004-09-09 | Osram Opto Semiconductors Gmbh | Beleuchtungsmodul und Verfahren zu dessen Herstellung |
DE102004005269B4 (de) | 2003-11-28 | 2005-09-29 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode |
TWI229463B (en) * | 2004-02-02 | 2005-03-11 | South Epitaxy Corp | Light-emitting diode structure with electro-static discharge protection |
US7279724B2 (en) | 2004-02-25 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
US7064353B2 (en) | 2004-05-26 | 2006-06-20 | Philips Lumileds Lighting Company, Llc | LED chip with integrated fast switching diode for ESD protection |
KR100665116B1 (ko) | 2005-01-27 | 2007-01-09 | 삼성전기주식회사 | Esd 보호용 led를 구비한 질화갈륨계 발광 소자 및그 제조 방법 |
TWI257186B (en) * | 2005-09-29 | 2006-06-21 | Formosa Epitaxy Inc | Light-emitting diode chip |
JP2007157926A (ja) | 2005-12-02 | 2007-06-21 | Sanken Electric Co Ltd | 保護ダイオードを伴った半導体発光装置及びその製造方法 |
US7994514B2 (en) * | 2006-04-21 | 2011-08-09 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with integrated electronic components |
US7601989B2 (en) * | 2007-03-27 | 2009-10-13 | Philips Lumileds Lighting Company, Llc | LED with porous diffusing reflector |
KR100849826B1 (ko) * | 2007-03-29 | 2008-07-31 | 삼성전기주식회사 | 발광소자 및 이를 포함하는 패키지 |
DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
JP2009016467A (ja) * | 2007-07-03 | 2009-01-22 | Sony Corp | 窒化ガリウム系半導体素子及びこれを用いた光学装置並びにこれを用いた画像表示装置 |
DE102007061479A1 (de) | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip mit Überspannungsschutz |
DE102008022942A1 (de) * | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
DE102008034560B4 (de) * | 2008-07-24 | 2022-10-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips |
DE102009006177A1 (de) * | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
DE102009053064A1 (de) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements |
DE102009056386B4 (de) * | 2009-11-30 | 2024-06-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Halbleiterbauelements |
-
2009
- 2009-01-26 DE DE102009006177A patent/DE102009006177A1/de not_active Withdrawn
- 2009-10-29 JP JP2011537839A patent/JP5669746B2/ja active Active
- 2009-10-29 EP EP09767932.8A patent/EP2351079B1/de active Active
- 2009-10-29 US US13/123,421 patent/US9054016B2/en active Active
- 2009-10-29 KR KR1020117014630A patent/KR101679092B1/ko active IP Right Grant
- 2009-10-29 CN CN2009801478179A patent/CN102227807B/zh active Active
- 2009-10-29 WO PCT/DE2009/001524 patent/WO2010060404A1/de active Application Filing
- 2009-11-23 TW TW098139698A patent/TWI433309B/zh active
-
2014
- 2014-09-24 JP JP2014193756A patent/JP5890498B2/ja active Active
-
2015
- 2015-05-04 US US14/702,807 patent/US9590008B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9054016B2 (en) | 2015-06-09 |
US9590008B2 (en) | 2017-03-07 |
TW201029232A (en) | 2010-08-01 |
WO2010060404A1 (de) | 2010-06-03 |
CN102227807A (zh) | 2011-10-26 |
TWI433309B (zh) | 2014-04-01 |
KR20110095918A (ko) | 2011-08-25 |
JP5669746B2 (ja) | 2015-02-12 |
DE102009006177A1 (de) | 2010-06-02 |
EP2351079B1 (de) | 2017-03-08 |
CN102227807B (zh) | 2013-10-16 |
EP2351079A1 (de) | 2011-08-03 |
US20110260205A1 (en) | 2011-10-27 |
JP2012510173A (ja) | 2012-04-26 |
JP2015015497A (ja) | 2015-01-22 |
KR101679092B1 (ko) | 2016-12-06 |
US20150236070A1 (en) | 2015-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5890498B2 (ja) | 放射放出半導体チップ | |
JP5511813B2 (ja) | 静電放電に対する保護を有する放射放出半導体チップおよびその製造方法 | |
KR101590204B1 (ko) | 복사 방출 반도체칩 | |
JP6104158B2 (ja) | オプトエレクトロニクス半導体チップ、およびオプトエレクトロニクス半導体チップの製造方法 | |
US20120223416A1 (en) | Thin-film semiconductor component with protection diode structure and method for producing a thin-film semiconductor component | |
US9825198B2 (en) | Method of producing a plurality of optoelectronic semiconductor chips, and optoelectronic semiconductor chip | |
JP5813138B2 (ja) | キャリア基板、および半導体チップの製造方法 | |
US8946761B2 (en) | Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip | |
KR20150056559A (ko) | 서로 나란히 배치되는 복수의 활성 영역을 포함한 광전자 반도체 칩 | |
KR102550004B1 (ko) | 발광 소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150722 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150804 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151023 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160209 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160218 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5890498 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |