JP2013500503A5 - - Google Patents

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Publication number
JP2013500503A5
JP2013500503A5 JP2012522125A JP2012522125A JP2013500503A5 JP 2013500503 A5 JP2013500503 A5 JP 2013500503A5 JP 2012522125 A JP2012522125 A JP 2012522125A JP 2012522125 A JP2012522125 A JP 2012522125A JP 2013500503 A5 JP2013500503 A5 JP 2013500503A5
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JP
Japan
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composition
mixture
alcohol
propanol
amine
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JP2012522125A
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English (en)
Japanese (ja)
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JP2013500503A (ja
JP6165442B2 (ja
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Priority claimed from PCT/EP2010/060762 external-priority patent/WO2011012559A2/en
Publication of JP2013500503A publication Critical patent/JP2013500503A/ja
Publication of JP2013500503A5 publication Critical patent/JP2013500503A5/ja
Application granted granted Critical
Publication of JP6165442B2 publication Critical patent/JP6165442B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012522125A 2009-07-30 2010-07-26 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物 Expired - Fee Related JP6165442B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22976009P 2009-07-30 2009-07-30
US61/229,760 2009-07-30
PCT/EP2010/060762 WO2011012559A2 (en) 2009-07-30 2010-07-26 Post ion implant stripper for advanced semiconductor application

Publications (3)

Publication Number Publication Date
JP2013500503A JP2013500503A (ja) 2013-01-07
JP2013500503A5 true JP2013500503A5 (https=) 2013-09-12
JP6165442B2 JP6165442B2 (ja) 2017-07-19

Family

ID=43137613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012522125A Expired - Fee Related JP6165442B2 (ja) 2009-07-30 2010-07-26 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物

Country Status (10)

Country Link
US (1) US9484218B2 (https=)
EP (1) EP2460177B1 (https=)
JP (1) JP6165442B2 (https=)
KR (1) KR101746879B1 (https=)
CN (1) CN102473638B (https=)
IL (1) IL217708A (https=)
MY (1) MY185453A (https=)
SG (2) SG10201404328QA (https=)
TW (1) TWI594088B (https=)
WO (1) WO2011012559A2 (https=)

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US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
RU2585322C2 (ru) 2011-03-18 2016-05-27 Басф Се Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее
CN104093790B (zh) * 2011-11-29 2016-10-12 涂料外国Ip有限公司 非水溶剂组合物及其作为隔离液体的用途
TWI588253B (zh) 2012-03-16 2017-06-21 巴地斯顏料化工廠 光阻剝除與清潔組合物及其製備方法與用途
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6233779B2 (ja) * 2013-11-18 2017-11-22 富士フイルム株式会社 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法
JP2015118125A (ja) * 2013-11-18 2015-06-25 富士フイルム株式会社 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法
EP3089382B1 (en) 2013-12-25 2018-11-21 Huawei Marine Networks Co., Limited Optical branching unit for optical add drop multiplexing
US20150219996A1 (en) * 2014-02-06 2015-08-06 Dynaloy, Llc Composition for removing substances from substrates
WO2016084860A1 (ja) * 2014-11-27 2016-06-02 富士フイルム株式会社 除去液、これを用いた除去方法および半導体基板製品の製造方法
KR101850192B1 (ko) * 2015-12-02 2018-04-19 연세대학교 산학협력단 유기용매를 이용한 포토레지스트 제거방법
JP6536464B2 (ja) * 2016-04-26 2019-07-03 信越化学工業株式会社 洗浄剤組成物及び薄型基板の製造方法
BR112018013322B1 (pt) 2016-05-10 2022-12-06 Atotech Deutschland Gmbh Composição de separação não aquosa, seu uso e processo de separação de um revestimento orgânico de um substrato
JP7204760B2 (ja) * 2018-02-14 2023-01-16 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトレジストリムーバ組成物
TWI809992B (zh) * 2021-07-27 2023-07-21 元瀚材料股份有限公司 去光阻組成物及其使用方法
CN116285995A (zh) * 2021-12-20 2023-06-23 李长荣化学工业股份有限公司 用于移除硅的蚀刻组成物及使用其移除硅的方法
JP7752541B2 (ja) 2022-01-21 2025-10-10 関東化学株式会社 フォトレジスト剥離組成物
JP7290195B1 (ja) * 2022-10-19 2023-06-13 Jsr株式会社 半導体処理用組成物及び処理方法

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US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
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US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5811358A (en) 1997-01-03 1998-09-22 Mosel Vitelic Inc. Low temperature dry process for stripping photoresist after high dose ion implantation
JPH1184686A (ja) 1997-09-01 1999-03-26 Mitsubishi Gas Chem Co Inc レジスト剥離剤組成物
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
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JP4678673B2 (ja) * 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
EP1945748A4 (en) * 2005-10-13 2009-01-07 Advanced Tech Materials COMPATIBLE PHOTOLACK AND / OR SURFACE ANTIREFLEXION COATING COMPOSITION COMPRISED WITH METALS
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
JP2011502281A (ja) 2007-10-31 2011-01-20 イー.ケー.シー.テクノロジー.インコーポレーテッド フォトレジスト剥離用化合物
WO2010127941A1 (en) * 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices

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