CN101371199B - 用于半导体制造的光刻胶剥离剂组合物 - Google Patents
用于半导体制造的光刻胶剥离剂组合物 Download PDFInfo
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- CN101371199B CN101371199B CN200680037895XA CN200680037895A CN101371199B CN 101371199 B CN101371199 B CN 101371199B CN 200680037895X A CN200680037895X A CN 200680037895XA CN 200680037895 A CN200680037895 A CN 200680037895A CN 101371199 B CN101371199 B CN 101371199B
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- acid
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
干法蚀刻条件 | 灰化条件 |
蚀刻气体:CF4/O2气体混合物气体流量:200/10sccm压力:20mTorr射频功率:400W磁场:140高斯蚀刻时间:300秒 | 所用气体:O2/N2气体混合物气体流量:950/50sccm压力:5mTorr微波功率:1KW晶片温度:200℃灰化时间:120秒/晶片 |
Claims (4)
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050074550 | 2005-08-13 | ||
KR1020050074550A KR100718532B1 (ko) | 2005-08-13 | 2005-08-13 | 반도체 제조용 감광성수지 제거제 조성물 |
KR10-2005-0074550 | 2005-08-13 | ||
KR1020060073202 | 2006-08-03 | ||
KR10-2006-0073209 | 2006-08-03 | ||
KR1020060073209 | 2006-08-03 | ||
KR10-2006-0073202 | 2006-08-03 | ||
KR1020060073209A KR100893280B1 (ko) | 2006-08-03 | 2006-08-03 | 반도체 제조용 감광성수지 제거제 조성물 |
KR1020060073202A KR100893279B1 (ko) | 2006-08-03 | 2006-08-03 | 반도체 제조용 감광성수지 제거제 조성물 |
PCT/KR2006/003085 WO2007021085A1 (en) | 2005-08-13 | 2006-08-05 | Photoresist stripper composition for semiconductor manufacturing |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101371199A CN101371199A (zh) | 2009-02-18 |
CN101371199B true CN101371199B (zh) | 2012-05-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200680037895XA Active CN101371199B (zh) | 2005-08-13 | 2006-08-05 | 用于半导体制造的光刻胶剥离剂组合物 |
Country Status (2)
Country | Link |
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KR (1) | KR100718532B1 (zh) |
CN (1) | CN101371199B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100893280B1 (ko) * | 2006-08-03 | 2009-04-17 | 테크노세미켐 주식회사 | 반도체 제조용 감광성수지 제거제 조성물 |
KR100893279B1 (ko) * | 2006-08-03 | 2009-04-17 | 테크노세미켐 주식회사 | 반도체 제조용 감광성수지 제거제 조성물 |
CN101286016A (zh) * | 2007-04-13 | 2008-10-15 | 安集微电子(上海)有限公司 | 低蚀刻性光刻胶清洗剂 |
CN102051283B (zh) * | 2009-10-30 | 2014-11-05 | 安集微电子(上海)有限公司 | 一种含羟胺的清洗液及其应用 |
CN102012645A (zh) * | 2010-12-24 | 2011-04-13 | 东莞市智高化学原料有限公司 | 一种光刻胶剥离液 |
US20140205845A1 (en) * | 2013-01-18 | 2014-07-24 | Carestream Health, Inc. | Stabilization agents for transparent conductive films |
CN103789780B (zh) * | 2014-02-26 | 2016-06-08 | 苏州禾川化学技术服务有限公司 | 一种ic元件用碱性通用型去毛刺液 |
CN104049475B (zh) * | 2014-05-30 | 2017-12-12 | 江苏弘汉生物科技有限公司 | 具有防腐蚀功效的去除剂 |
CN104049476B (zh) * | 2014-05-30 | 2017-11-14 | 青岛华仁技术孵化器有限公司 | 光刻胶剥离剂 |
CN104049477B (zh) * | 2014-05-30 | 2017-12-19 | 江苏弘汉生物科技有限公司 | 抗蚀剂剥离剂 |
CN104503211B (zh) * | 2014-11-05 | 2019-01-25 | 青岛华仁技术孵化器有限公司 | 抗蚀剂剥离剂 |
CN104777721B (zh) * | 2014-11-05 | 2019-12-06 | 青岛华仁技术孵化器有限公司 | 抗蚀剂去除剂 |
CN106350280A (zh) * | 2016-08-30 | 2017-01-25 | 雷春生 | 一种环保复合除胶剂的制备方法 |
KR20210093496A (ko) * | 2020-01-20 | 2021-07-28 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법 |
CN113416446B (zh) * | 2021-06-01 | 2022-12-06 | 深圳市点石源水处理技术有限公司 | 一种铝基板白油去除剂及其制备方法 |
Citations (6)
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EP0647884A1 (en) * | 1993-10-07 | 1995-04-12 | MALLINCKRODT BAKER, Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
EP1031884A2 (en) * | 1999-02-25 | 2000-08-30 | Mitsubishi Gas Chemical Company, Inc. | Resist stripping agent and process of producing semiconductor devices using the same |
CN1403876A (zh) * | 2001-08-31 | 2003-03-19 | 东京应化工业株式会社 | 光刻胶用剥离液和使用该剥离液的光刻胶剥离方法 |
CN1426554A (zh) * | 2000-02-23 | 2003-06-25 | 西门子公司 | 在含有多个计算机子系统的分布式计算机系统中用于保证兼容性的方法以及用于数据保护的方法 |
CN1439932A (zh) * | 2002-02-19 | 2003-09-03 | 株式会社德成 | 用于剥离光刻胶的组合物 |
EP1400858A1 (en) * | 2001-06-29 | 2004-03-24 | Mitsubishi Gas Chemical Company, Inc. | Photoresist stripper composition |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002072506A (ja) * | 2000-08-31 | 2002-03-12 | Nagase Kasei Kogyo Kk | フォトレジスト剥離剤組成物及びその使用方法 |
JP2002196509A (ja) * | 2000-12-25 | 2002-07-12 | Nagase Kasei Kogyo Kk | フォトレジスト剥離剤組成物及びその使用方法 |
JP4085262B2 (ja) * | 2003-01-09 | 2008-05-14 | 三菱瓦斯化学株式会社 | レジスト剥離剤 |
JP2005037631A (ja) * | 2003-07-14 | 2005-02-10 | Japan Carlit Co Ltd:The | レジスト剥離剤 |
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2005
- 2005-08-13 KR KR1020050074550A patent/KR100718532B1/ko active IP Right Grant
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2006
- 2006-08-05 CN CN200680037895XA patent/CN101371199B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0647884A1 (en) * | 1993-10-07 | 1995-04-12 | MALLINCKRODT BAKER, Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
EP1031884A2 (en) * | 1999-02-25 | 2000-08-30 | Mitsubishi Gas Chemical Company, Inc. | Resist stripping agent and process of producing semiconductor devices using the same |
CN1426554A (zh) * | 2000-02-23 | 2003-06-25 | 西门子公司 | 在含有多个计算机子系统的分布式计算机系统中用于保证兼容性的方法以及用于数据保护的方法 |
EP1400858A1 (en) * | 2001-06-29 | 2004-03-24 | Mitsubishi Gas Chemical Company, Inc. | Photoresist stripper composition |
CN1403876A (zh) * | 2001-08-31 | 2003-03-19 | 东京应化工业株式会社 | 光刻胶用剥离液和使用该剥离液的光刻胶剥离方法 |
CN1439932A (zh) * | 2002-02-19 | 2003-09-03 | 株式会社德成 | 用于剥离光刻胶的组合物 |
Non-Patent Citations (1)
Title |
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JP特开2002-196509A 2002.07.12 |
Also Published As
Publication number | Publication date |
---|---|
CN101371199A (zh) | 2009-02-18 |
KR100718532B1 (ko) | 2007-05-16 |
KR20070019897A (ko) | 2007-02-16 |
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Address after: Gyeonggi Do, South Korea Patentee after: SOULBRAIN Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: TECHNO SEMICHEM Co.,Ltd. Address after: Gyeonggi Do, South Korea Patentee after: Xiubo ruiyin holding Zhushi commune Address before: Gyeonggi Do, South Korea Patentee before: SOULBRAIN Co.,Ltd. |
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