CN1439932A - 用于剥离光刻胶的组合物 - Google Patents
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Abstract
本发明公开的是用于脱除光刻胶的剥离组合物,该组合物包括至少一种由5-50%重量的乙酰乙酸酯或乙酸同脂肪酸胺反应得到的产物和50-95%重量选自水、25%重量四甲基氢氧化铵水溶液、二元醇和有机极性溶剂的溶剂。从剥离性看,这种组合物非常优秀,只需要用超纯水漂洗而不需要通过用空气刀脱除剥离组合物以及用异丙醇漂洗。另外,由于低挥发性和低毒性,该组合物给予环境很低的污染。此外,即使在没有防侵蚀剂的情况下,也不会侵蚀金属底涂层和管材底材,如O-型环。
Description
本发明涉及用于剥离光刻胶的组合物,上述的光刻胶是在制造半导体装置和液晶显示器时通过蚀刻、灰化和/或离子注入法改性的。
总的来说,用于剥离光刻胶的组合物对光刻胶的溶解和剥离性要求是很高的,但又不能腐蚀底涂层,特别是金属底涂层,也不能损害底材,如O-型环和管材。
一般来说,剥离组合物由能溶解光刻胶的盐和溶剂组成。
传统上,有机胺如单乙醇胺和二元醇或极性溶剂用于剥离溶液中,如在日本专利未决公开Sho 63-231343和Hei.4-124668和美国专利4,770,713中所公开的。
但是,剥离溶液的可剥离性不足也能引起问题,因为随着被处理的物体量的增加,会有更多的光刻胶粒子不溶解、从而使产量降低。另一方面,可剥离性增大的剥离溶液可以腐蚀金属底涂层或损害O-型环或管材。
用在制备半导体装置的剥离组合物大多数使用了昂贵的羟胺和防侵蚀剂以保护金属底涂层,如在日本专利未决公开Hei.9-96911中所公开的。在使用羟基烷烃酰胺的情况下,要求在80-90℃加热5小时,以得到酰胺反应物。此外,产生的醇必须通过分步蒸馏等方法脱除,这就要求昂贵的防侵蚀剂,如邻苯二酚。
经本发明人对剥离组合物的详尽和全面的研究而得到的本发明中发现,由乙酰乙酸烷基酯或乙酸同脂肪酸胺反应得到的产品可以作为高效的溶解光刻胶的溶剂,而没有产生包括腐蚀底涂层和侵蚀底材本身等问题。
因此,本发明的一个目的是提供剥离光刻胶的组合物,这种组合物显示优秀的可剥离性而又不会损害底涂层、O-型环和管材底材。
附图简要说明
图1提供了涂有光刻胶的玻璃底材在剥离前的扫描电子显微照片(a)和用本发明的实施例1的剥离组合物剥离后的扫描电子显微照片(b)以及用对比实施例2的剥离组合物剥离的扫描电子显微照片(c),由这些照片评价了剥离组合物的剥离性能。
图2提供了在浸入本发明实施例1的剥离组合物前的PVC管材样品的扫描电子显微照片(a),和浸入本发明实施例1的剥离组合物后的PVC管材样品的扫描电子显微照片(b)以及浸入对比实施例1的剥离组合物的扫描电子显微照片,由这些照片评价剥离组合物对PVC管材底材的侵蚀。
图3提供了在浸入本发明实施例1的剥离组合物前的O-型环样品(由聚全氟乙烯制造)的扫描电子显微照片(a)和浸入本发明实施例1的剥离溶液后的O-型环样品的扫描电子显微照片(b)以及在浸入对比实施例1中的剥离组合物的扫描电子显微照片,由这些照片评价剥离组合物对O-型环的侵蚀。
图4提供了在浸入本发明实施例14的剥离组合物前的涂有光刻胶的硅晶片的扫描电子显微照片(a),和浸入本发明实施例14的剥离组合物后的涂有光刻胶硅晶片的扫描电子显微照片(b)以及浸入到对比实施例5的剥离组合物中的扫描电子显微照片(c),由这些照片评价剥离组合物对光刻胶的剥离性能和对硅晶片的腐蚀。
本发明涉及用于脱除光刻胶的组合物。在制造半导体装置和液晶显示器中,光刻胶经过蚀刻、灰化和离子注入法得到改性,并根据需要脱除。
一般来说,剥离光刻胶的组合物包括溶解光刻胶的盐(光刻胶的加溶剂)和溶剂。本发明的组合物使用乙酰乙酸烷基酯或乙酸与脂肪酸胺反应产品作为光刻胶加溶剂和选自水、25%重量的四甲基氢氧化铵水溶液、二元醇和有机极性化合物的溶剂。如果需要,本发明的组合物可以同该领域熟知的光刻胶加溶剂混合使用,如单乙醇胺或酸(如硫酸和硝酸或它们的混合物)。
本发明的剥离组合物可以很容易地在室温下不用加热而制备。
用在本发明的乙酰乙酸烷基酯的实例包括乙酰乙酸甲酯(以下称为MAA)和乙酰乙酸乙酯(以下称为EAA),可以用乙酸酐代替乙酸。
用在本发明的脂肪酸胺选自单乙醇胺、异丙醇胺、二乙醇胺、二甲基氨基乙醇和二甲基乙醇胺。用在本发明的二元醇选自乙二醇、单甲醚、单丁醚、丁基卡必醇、乙基卡必醇、双丙甘醇、单乙醚以及三甘醇。作为适宜的极性溶剂,可以使用N-甲基吡咯烷酮或二甲基亚砜或乙酸二甲酯酰胺(dimethyl acetate amide)。
在经分别制备后,将光刻胶加溶剂和溶剂相互混合得到本发明的剥离组合物。或者,这种剥离组合物可以由乙酰乙酸烷基酯、乙酸和脂肪酸胺在溶剂存在下得到的反应混合物直接制备。
在经一般地讨论了本发明后,可以通过在这里提供的只为了说明和除非专门指出而不打算作为限制的具体实例对本发明进一步理解。
[光刻胶加溶剂的制备]
合成实施例1:光刻胶加溶剂的合成
在500毫升的Erlenmyer烧瓶中装入232.2克MAA和122.16克单乙醇胺(以下称MEA),将混合物搅拌60分钟得到粘性黄色液相产品(350克)。为方便起见,将其称为“反应产物A”。
合成实施例2:光刻胶加溶剂的合成
进行实施例1的合成方法,所不同的是,102.09克乙酸酐(以下称AA)代替MAA与122.16克的MEA反应。得到224克粘性淡黄色液相物。为方便起见,将其称为“反应产物B”。
合成实施例3:光刻胶加溶剂的合成
进行实施例2的合成方法,所不同的是,100.0克乙酸代替AA与55.0克的MEA反应。得到150克粘性淡黄色液相物。为方便起见,将其称为“反应产物C”。
上述合成实施例中得到的产物是沸点为170℃或更高的粘性的低挥发性的材料。
[剥离组合物的制备]
实施例1
将12克合成实施例1得到的反应产物A、3克合成实施例2中得到的反应产物B、10克MEA和20克N-甲基吡咯烷酮(1-甲基-2-吡咯烷酮)(以后称“NMP”)以及55克乙基卡必醇(以后称“EDG”)混合在一起得到剥离组合物。
实施例2
将8克MAA、1.5克AA、15.5克MEA、20克NMP以及55克EDG混合在一起,然后在室温下搅拌混合物60分钟得到剥离组合物。
实施例3-16
采用实施例1的相同方法,按照在下面表1中所示的组合物比例制备了用于脱除光刻胶的剥离组合物,并按照下面讨论的方法评价了剥离性能。
实施例17
将15克合成实施例3得到的反应产物C与81.2克水和3.8克的98%的硫酸混合,得到剥离组合物,pH2.7。
实施例18-22
采用实施例17的相同方法,按照在表1中所示的组合物比例制备了用于脱除光刻胶的剥离组合物并按照下面讨论的方法评价了剥离性能。
表1 单位:重量%
注:MAA:乙酸甲酯,AA:乙酸酐
实施例 | 反应产物 | MAA | AA | MEA | NMP | EDG | DMAc | TMAH | BDG | SLN | 水 | 硫酸98% | 硝酸70% | 乙酸99% | ||
A | B | C | ||||||||||||||
1 | 12 | 3 | 10 | 20 | 55 | |||||||||||
2 | 8 | 1.5 | 15.5 | 20 | 55 | |||||||||||
3 | 15 | 15 | 65 | 5 | ||||||||||||
4 | 10 | 3 | 20 | 67 | ||||||||||||
5 | 27 | 3 | 70 | |||||||||||||
6 | 15 | 3 | 20 | 62 | ||||||||||||
7 | 15 | 15 | 70 | |||||||||||||
8 | 10 | 2 | 10 | 20 | 58 | |||||||||||
9 | 12 | 3 | 10 | 55 | 20 | |||||||||||
10 | 30 | 3 | 57 | 10 | ||||||||||||
11 | 35 | 4 | 10 | 20 | 26 | 5 | ||||||||||
12 | 30 | 3 | lO | 20 | 10 | 27 | ||||||||||
13 | 20 | 3 | 10 | 5 | 29 | 10 | 20 | 3 | ||||||||
14 | 10 | 10 | 0.5 | 79.5 | ||||||||||||
15 | 10 | 15 | 1 | 74 | ||||||||||||
16 | 15 | 15 | 3 | 67 | ||||||||||||
17 | 15 | 81.2 | 3.8 | |||||||||||||
18 | 15 | 79.2 | 5.8 | |||||||||||||
19 | 15 | 10 | 2 | 69.1 | 3.9 | |||||||||||
20 | 15 | 80.8 | 4.2 | |||||||||||||
21 | 15 | 85.0 | ||||||||||||||
22 | 15 | 82.5 | 2.5 | |||||||||||||
C.1 | 10 | 30 | 60 | |||||||||||||
C.2 | 35 | 25 | 40 | |||||||||||||
C.3 | 30 | 70 | ||||||||||||||
C.4 | 20 | 30 | 50 | |||||||||||||
C.5 | 15 | 50 | 5 | 30 | ||||||||||||
C.6 | 20 | 60 | 20 | |||||||||||||
C.7 | 20 | 2.5 | 25 | 30 | ||||||||||||
C.8 | 99.98 | 0.02 | ||||||||||||||
C.9 | 99.97 | 0.12 | ||||||||||||||
C.10 | 99.96 | 2.5 |
MEA:单乙醇胺,NMP:1-甲基-2-吡咯烷酮
EDG:乙基卡必醇,BDG:丁基卡必醇
DMAc:二甲基乙酰胺
TMAH:四甲基氢氧化铵(25%的水溶液)
SLN:四亚甲基砜
1.对硅晶片(1)剥离性能的评价
将用于普通目的的基于线形酚醛清漆的正性光刻胶通过旋涂涂于4-英寸硅晶片上,厚度1.5微米,并在热板上在110℃烘烤90秒,然后在150℃烘烤5分钟。
随后,将这样得到的晶片样品在保持在70℃在含表1的剥离组合物的50毫升管形瓶中浸渍预定的时间。浸渍完成后,用空气喷枪脱除样品中的剩余组合物,用异丙醇(以后称为IPA)洗1分钟,用超纯水洗净,并用空气喷枪干燥。用肉眼观测以确定是否有残余的光刻胶附着在晶片的表面。结果见下面的表2。
2.对硅晶片(2)剥离性能的评价
用相似于评价1的方法进行评价,所改进之处是不用在浸渍后脱除剩余的组合物以及不用IPA洗净。结果见下面的表2。
3.对玻璃底材剥离性能的评价
用评价2相同的方法,在玻璃底材上试验了剥离组合物的剥离性能。每一底材涂有基于线形酚醛清漆的正性光刻胶,在其表面上涂有厚度200纳米的金属薄膜。为测定是否有残余的光刻胶附着在底材的表面,使用扫描电子显微镜(Hitachi,Japan,S-4300)。评价结果见下面的表2。
4.对玻璃底材底涂层腐蚀的评价
将用在前一评价中相同的玻璃底材制成的2×2厘米的样品浸渍于50毫升的每种剥离组合物中3、10和24小时,并用肉眼测定它们的腐蚀状态。结果见下面的表2。用Inductively CoupledPlasma-Mass Spectroscopy(由Hewlett Packard制造的ICP-MS 7500S)分析剥离组合物,结果见下面的表3。
5.对管材侵蚀的评价
在50毫升的小管形瓶中,每个放入40克的剥离组合物。将预定大小的聚氯乙烯(以下称“干净PVC”)管材在室温(23℃)下浸入1天。浸渍完成后,干净的PVC管材碎块用IPA洗1分钟,然后用超纯水洗3分钟。随后用空气喷枪干燥。用SEM(Hitachi,Japan,S-4300)检查是否有剥离溶液侵蚀了干净的PVC管材的内表面。结果见下面的表2。
6.对O-型环(由全氟乙烯制)的侵蚀的评价
在70℃,在50毫升小管形瓶中,在每一管形瓶中加入30克的剥离组合物。将O-型环的一半浸入1天。浸入完成后,用IPA洗干净PVC管材1分钟,然后用超纯水洗3分钟,接着用空气喷枪干燥。用SEM(Hitachi,Japan,S-4300)检查是否有剥离溶液侵蚀了干净PVC管材的内表面。结果见下面的表2
表2剥离组合物的剥离性、腐蚀和侵蚀的评价
注:可剥离性:◎ 优秀
实施例 | 评价号 | 剥离性 | 腐蚀(24小时) | 侵蚀(24小时) | |||
硅晶片 | 玻璃 | 铝薄膜 | 钼薄 | C-PVC | O-型环 | ||
1 | 1 | ◎ | ◎ | ◎ | ◎ | ○ | ◎ |
2 | ◎ | ◎ | ◎ | ◎ | ○ | ◎ | |
2 | 1 | ◎ | ◎ | ◎ | ◎ | ○ | ◎ |
2 | ◎ | ◎ | ◎ | ◎ | ○ | ◎ | |
3 | 1 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
2 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ | |
4 | 2 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
5 | 2 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
6 | 2 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
7 | 2 | ○ | ◎ | ○ | ○ | ○ | ○ |
8 | 2 | ○ | ◎ | ◎ | ◎ | ○ | ○ |
9 | 2 | ◎ | ◎ | ◎ | ◎ | △ | ◎ |
10 | 2 | ○ | ◎ | ◎ | ◎ | ○ | ◎ |
11 | 2 | ◎ | ◎ | ◎ | ◎ | ○ | ◎ |
12 | 2 | ○ | ◎ | ◎ | ◎ | △ | ◎ |
13 | 2 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
C.1 | 1 | ○ | ○ | ○ | △ | △ | △ |
C.2 | 1 | ◎ | ◎ | ○ | △ | △ | △ |
C.3 | 1 | △ | ○ | ○ | △ | ◎ | ◎ |
○ 中等
△ 差
腐蚀: ◎ 不腐蚀或轻微腐蚀
○ 薄膜变薄一点
× 部分腐蚀或没有剩余的薄膜
侵蚀: ◎ 不侵蚀或轻微侵蚀
○ 有点侵蚀
△ 显著腐蚀
表3
对玻璃底材底涂层腐蚀的评价
单位:ppb
底涂层 | 浸渍时间(小时) | ||||
0 | 3 | 10 | 24 | ||
实施例1 | Al | 0 | <1.0 | 5.9 | 7.2 |
Mo | 0 | 3.7 | 182.9 | 1758.6 | |
对比实施例2 | Al | 0 | 3.0 | 6.1 | 20.1 |
Mo | 0 | 577.4 | 4545.0 | 15850.4 | |
对比实施例3 | Al | 0 | 2.8 | 6.4 | 21.5 |
Mo | 0 | 117.9 | 3348.4 | 11592.4 |
从表2和表3看出,实施例1-13的组合物的剥离性是优秀的,对底涂层Al和Mo薄膜几乎没有腐蚀。另外,实施例3-6和16的组合物对C-PVC管材和O-型环几乎没有侵蚀。
另外,用实施例1和对比实施例2和3的组合物的试验结果示于图1-3的扫描电子显微照片。
7.对用于制造半导体装置的硅晶片的可剥离性能和腐蚀的评价(1)
在由Al和Ti的合金制造的底材上刻上通用的i-线或KrF正性光刻胶,以用于半导体处理。在蚀刻和灰化过程后,将硅晶片底材切成1.5×1.5厘米的方块样品。浸入保持在30-60℃的含剥离组合物的50毫升的小管形瓶10分钟后,样品用超纯水漂洗1分钟并用空气喷枪干燥。为了测定是否有残余的光刻胶附着在底材的图案表面上和剥离组合物是否腐蚀了金属薄膜。使用SEM(Hitachi,Japan,S-4300)。结果见下面的表4。
表4
对硅晶片光刻胶的剥离性和底涂层腐蚀的评价
组合物 | pH | 评价 | 剥离性 | 腐蚀 | |||
温度(℃) | 时间(分钟) | 评价 | 结果 | Al | Mo | ||
实施例14 | 4.5 | 40 | 10 | (2) | △ | ◎ | ◎ |
50 | 10 | ○ | ◎ | ◎ | |||
60 | 10 | ◎ | ◎ | ◎ | |||
实施例1 5 | 5.0 | 60 | 10 | ◎ | ◎ | ◎ | |
实施例16 | 4.2 | 60 | 10 | ◎ | ◎ | ◎ | |
实施例17 | 2.7 | 35 | 10 | ○ | ◎ | ◎ | |
20 | ◎ | ◎ | ◎ | ||||
30 | ◎ | ◎ | ◎ | ||||
40 | 10 | ◎ | ◎ | ◎ | |||
20 | ◎ | ◎ | ◎ | ||||
30 | ◎ | ◎ | ◎ | ||||
50 | 10 | ◎ | ◎ | ◎ | |||
20 | ◎ | ◎ | ◎ | ||||
30 | ◎ | ◎ | ◎ | ||||
55 | 10 | ◎ | ◎ | ◎ | |||
20 | ◎ | ◎ | ◎ | ||||
30 | ◎ | ○ | ◎ | ||||
60 | 10 | ◎ | ◎ | ◎ | |||
20 | ◎ | △ | ◎ | ||||
30 | ◎ | △ | ◎ | ||||
实施例18 | 2.7 | 35 | 10 | ○ | ◎ | ◎ | |
20 | ◎ | ◎ | ◎ | ||||
30 | ◎ | ◎ | ◎ | ||||
40 | 10 | ◎ | ◎ | ◎ | |||
20 | ◎ | ◎ | ◎ | ||||
30 | ◎ | ◎ | ◎ | ||||
实施例19 | 2.6 | 35 | 10 | ◎ | ◎ | ◎ | |
20 | ◎ | ◎ | ◎ | ||||
30 | ◎ | ◎ | ◎ | ||||
实施例20 | 2.7 | 40 | 10 | ◎ | ◎ | ◎ | |
20 | ◎ | ◎ | ◎ | ||||
30 | ◎ | ◎ | ◎ |
表4(续)
对硅晶片光刻胶的剥离性和底涂层腐蚀的评价
组合物 | pH | 评价 | 剥离性 | 腐蚀 | |||
温度(℃) | 时间(分钟) | 评价 | 结果 | Al | Mo | ||
实施例21 | 6.5 | 60 | 10 | △ | ○ | ◎ | |
20 | △ | △ | ◎ | ||||
30 | ○ | △ | ◎ | ||||
实施例22 | 4.2 | 45 | 10 | ○ | ◎ | ◎ | |
20 | ○ | ◎ | ◎ | ||||
30 | ◎ | ◎ | ◎ | ||||
C.4 | 60 | 10 | (1) | △ | △ | ◎ | |
C.5 | 60 | 10 | ○ | △ | ◎ | ||
C.6 | 60 | 10 | △ | ○ | ◎ | ||
C.7 | 60 | 10 | ◎ | △ | ◎ | ||
C.8 | 2.7 | 40 | 10 | ◎ | ◎ | ◎ | |
50 | 10 | ◎ | ○ | ◎ | |||
20 | ◎ | △ | ◎ | ||||
30 | ◎ | △ | ◎ | ||||
55 | 10 | ◎ | △ | ◎ | |||
20 | ◎ | △ | ◎ | ||||
30 | ◎ | △ | ◎ | ||||
C.9 | 2.7 | 50 | 10 | ○ | ○ | ◎ | |
C.10 | 2.7 | 60 | 10 | △ | ◎ | ◎ |
注:可剥离性 ◎优秀
○中等
△差
腐蚀 ◎轻微腐蚀
○有点腐蚀
△显著腐蚀
表4的数据表明,实施例14至16的剥离组合物可有效地抗半导体硅晶片的光刻胶剥离,并对Al薄膜底涂层几乎没有腐蚀。在这一方面,用实施例14和相应的对比实施例5的剥离组合物得到的评价结果示于图4。
如前所讨论的,脱除本发明的光刻胶的剥离组合物的可剥离性如此优秀,以至只要求用超纯水进行漂洗,而不需要经过用空气刀的脱除剥离组合物和用异丙醇漂洗。另外,本发明的剥离组合物是低挥发性和低毒性,对环境产生很少污染。而且,即使在没有防侵蚀剂的情况下,本发明的剥离组合物有不侵蚀金属底涂层和管材底材如O-型环的优点。
本发明已经以说明的方式加以叙述,并应理解,所用的名词只打算用于叙述而不是用于限制本发明。许多本发明的改进和变化从上面的叙述中是完全可能的。因此,应该理解,在所附的权利要求范围内,除专门叙述的之外,可以进行实践。
Claims (5)
1.用于脱除光刻胶的组合物,该组合物包括5-50%的重量的至少一种从乙酰乙酸烷基酯或乙酸与脂肪酸胺反应得到的产物和50-95%重量的选自水、25%重量四甲基氢氧化铵水溶液、二元醇以及有机极性溶剂的溶剂。
2.权利要求1的剥离组合物,其中乙酰乙酸烷基酯选自乙酰乙酸甲酯和乙酰乙酸乙酯。
3.权利要求1的剥离组合物,其中脂肪酸胺选自单乙醇胺、异丙胺、二乙醇胺、二甲基氨基乙醇以及二甲基乙醇。
4.权利要求1的剥离组合物,其中二元醇选自乙二醇单甲醚、乙二醇单丁醚、丁基卡必醇、乙基卡必醇、二丙二醇单乙醚、二丙二醇单乙醚和三乙二醇,以及有机极性溶剂包括N-甲基吡咯烷酮、二甲基亚砜和二甲基乙酰胺。
5.权利要求1的剥离组合物,其中加有硫酸的组合物pH的范围为1-4。
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KR0008730/2002 | 2002-02-19 | ||
KR10-2002-0008730A KR100518714B1 (ko) | 2002-02-19 | 2002-02-19 | 레지스트 박리액 조성물 |
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CN1439932A true CN1439932A (zh) | 2003-09-03 |
CN1207634C CN1207634C (zh) | 2005-06-22 |
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CNB021200769A Expired - Fee Related CN1207634C (zh) | 2002-02-19 | 2002-05-22 | 用于剥离光刻胶的组合物 |
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US (1) | US20030166482A1 (zh) |
KR (1) | KR100518714B1 (zh) |
CN (1) | CN1207634C (zh) |
TW (1) | TWI243203B (zh) |
Cited By (5)
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CN101799639A (zh) * | 2010-04-01 | 2010-08-11 | 江阴市江化微电子材料有限公司 | 一种低温型水系正胶剥离液 |
CN101000468B (zh) * | 2006-01-11 | 2011-06-08 | 株式会社东进世美肯 | 薄膜晶体管液晶显示器用彩色抗蚀剂剥离液组合物 |
CN101371199B (zh) * | 2005-08-13 | 2012-05-30 | 韩国泰科诺赛美材料株式会社 | 用于半导体制造的光刻胶剥离剂组合物 |
CN102566333A (zh) * | 2011-12-30 | 2012-07-11 | 江阴江化微电子材料股份有限公司 | 一种低温型水系正胶剥离液及其制备方法 |
CN101187789B (zh) * | 2006-11-21 | 2012-10-03 | 气体产品与化学公司 | 去除光致抗蚀剂、蚀刻残余物和barc的配制料 |
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US20050032657A1 (en) * | 2003-08-06 | 2005-02-10 | Kane Sean Michael | Stripping and cleaning compositions for microelectronics |
CN100446191C (zh) * | 2005-09-23 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | 一种湿式化学清洗方法 |
US8657966B2 (en) | 2008-08-13 | 2014-02-25 | Intermolecular, Inc. | Combinatorial approach to the development of cleaning formulations for glue removal in semiconductor applications |
KR102224907B1 (ko) | 2018-04-17 | 2021-03-09 | 엘티씨 (주) | 드라이필름 레지스트 박리액 조성물 |
WO2023189371A1 (ja) * | 2022-03-29 | 2023-10-05 | 富士フイルム株式会社 | 薬液 |
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US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
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WO2000024842A1 (en) * | 1998-10-23 | 2000-05-04 | Arch Specialty Chemicals, Inc. | A chemical mechanical polishing slurry system having an activator solution |
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KR100335011B1 (ko) * | 1999-08-19 | 2002-05-02 | 주식회사 동진쎄미켐 | 레지스트 제거용 조성물 |
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- 2002-02-19 KR KR10-2002-0008730A patent/KR100518714B1/ko not_active IP Right Cessation
- 2002-04-02 TW TW091106581A patent/TWI243203B/zh not_active IP Right Cessation
- 2002-04-29 US US10/133,900 patent/US20030166482A1/en not_active Abandoned
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101371199B (zh) * | 2005-08-13 | 2012-05-30 | 韩国泰科诺赛美材料株式会社 | 用于半导体制造的光刻胶剥离剂组合物 |
CN101000468B (zh) * | 2006-01-11 | 2011-06-08 | 株式会社东进世美肯 | 薄膜晶体管液晶显示器用彩色抗蚀剂剥离液组合物 |
CN101187789B (zh) * | 2006-11-21 | 2012-10-03 | 气体产品与化学公司 | 去除光致抗蚀剂、蚀刻残余物和barc的配制料 |
CN101799639A (zh) * | 2010-04-01 | 2010-08-11 | 江阴市江化微电子材料有限公司 | 一种低温型水系正胶剥离液 |
CN102566333A (zh) * | 2011-12-30 | 2012-07-11 | 江阴江化微电子材料股份有限公司 | 一种低温型水系正胶剥离液及其制备方法 |
Also Published As
Publication number | Publication date |
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US20030166482A1 (en) | 2003-09-04 |
TWI243203B (en) | 2005-11-11 |
KR20030069266A (ko) | 2003-08-27 |
CN1207634C (zh) | 2005-06-22 |
KR100518714B1 (ko) | 2005-10-05 |
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