JP2013229509A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2013229509A JP2013229509A JP2012101541A JP2012101541A JP2013229509A JP 2013229509 A JP2013229509 A JP 2013229509A JP 2012101541 A JP2012101541 A JP 2012101541A JP 2012101541 A JP2012101541 A JP 2012101541A JP 2013229509 A JP2013229509 A JP 2013229509A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000009966 trimming Methods 0.000 claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 93
- 230000010355 oscillation Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 abstract description 27
- 230000008569 process Effects 0.000 abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000012986 modification Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
- H03L7/093—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal using special filtering or amplification characteristics in the loop
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】複数の多結晶シリコン抵抗で構成される抵抗を有する機能回路を備える半導体装置であって、機能回路の特性は抵抗のトリミングで調整可能であり、複数の多結晶シリコン抵抗は直列または並列に接続されるとともに、半導体装置の1辺と直交する向きに配置される半導体装置。
【選択図】図5
Description
図1を参照して、実施の形態1に係る半導体装置LSIの構成を説明する。
F=VREF2/(VH−VL)*1/CR …… 式1
ここで、Cは容量Cocoの値、Rは抵抗Rocoの値、記号”/”は除算、および記号”*”は積算を各々意味する。式1に示される通り、発振周波数Fは容量Cocoおよび抵抗Rocoの積算値に反比例する。従って、抵抗Rocoの値をトリミングにより調整することにより、目的とする発振周波数Fを実現することが可能となる。
図5(a)は、半導体装置LSIのレイアウトを模式的に示す。半導体装置LSIは矩形状を有し、より好ましくは正方形を有する。以降において、半導体装置LSIとして示す矩形の4辺は、ウエハに形成されている複数のチップをダイシングにより個別に切り出すことで形成された切断辺を意味する。この切断辺を”チップ辺”と記載する場合もある。
図6(a)に、出願人が行った実験結果を示す。横軸は正方形の形状を有する半導体装置LSIの一辺の長さ(チップサイズ)であり、縦軸は外側配置境界線Aおよび内側配置境界線Bの値である。チップサイズが4.15mm、4.932mm、および5.70mmの各場合における外側配置境界線Aの値は、チップサイズによらず100μmとすることが望ましいことが判明した。内側配置境界線Bの値は、チップサイズの増加とともに大きくなり、750μm、800μm、および900μmとすることが好ましいことが判明した。
オンチップオシレータOCO等の機能単位にまとめられた機能回路の特性を調整するトリミング抵抗を複数の多結晶シリコン抵抗で構成し、各多結晶シリコン抵抗をチップ辺と直交する向きに配置する。トリミング用の多結晶シリコン抵抗の向きをこのように規定することにより、ウエハ段階でトリミングにより調整した機能回路の特性(発振周波数)をその後のモールドパッケージプロセス後も実用上問題無い範囲で維持することが可能となる。
図11を参照して、実施の形態1の変形例1に係る半導体装置LSIの構成を説明する。
図12を参照して、実施の形態1の変形例2に係る半導体装置LSIの構成を説明する。
図13を参照して、実施の形態1の変形例3に係る半導体装置LSIの構成を説明する。
Claims (8)
- 複数の多結晶シリコン抵抗で構成される抵抗を有する機能回路を備える半導体装置であって、
前記機能回路の特性は前記抵抗のトリミングで調整可能であり、
前記複数の多結晶シリコン抵抗は直列または並列に接続されるとともに、前記半導体装置の1辺と直交する向きに配置される、半導体装置。 - 前記半導体装置は4つのチップ辺を備え、
前記複数の多結晶シリコン抵抗は、前記半導体装置の1つのチップ辺と平行で、かつ前記1つのチップ辺から各々所定の距離に設定された外側配置境界線および内側配置境界線との間に配置される、請求項1記載の半導体装置。 - 前記複数の多結晶シリコン抵抗は、前記1つのチップ辺の中央部に配置される、請求項2記載の半導体装置。
- 前記複数の多結晶シリコン抵抗は、前記4つのチップ辺の4隅に設けられ、1辺が所定の距離に設定された正方形領域には配置されない、請求項2記載の半導体装置。
- 前記複数の多結晶シリコン抵抗は、さらに、前記4つのチップ辺の対角線上には配置されない、請求項4記載の半導体装置。
- 前記機能回路はアナログ回路を有し、
前記多結晶シリコン抵抗の面積は、前記アナログ回路が有するいずれの抵抗の面積より小さい、請求項2記載の半導体装置。 - 前記機能回路はオンチップオシレータであり、
前記抵抗をトリミングすることにより前記オンチップオシレータの発振周波数が調整可能である、請求項2記載の半導体装置。 - 前記半導体装置は、さらに入出力回路を有し、
前記複数の多結晶シリコン抵抗は、前記入出力回路が配置される領域に配置される、請求項2記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012101541A JP6014357B2 (ja) | 2012-04-26 | 2012-04-26 | 半導体装置 |
US13/864,464 US8946827B2 (en) | 2012-04-26 | 2013-04-17 | Semiconductor device |
US14/585,283 US9300245B2 (en) | 2012-04-26 | 2014-12-30 | Semiconductor device |
US15/077,125 US20160204741A1 (en) | 2012-04-26 | 2016-03-22 | Semiconductor device |
Applications Claiming Priority (1)
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JP2012101541A JP6014357B2 (ja) | 2012-04-26 | 2012-04-26 | 半導体装置 |
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JP2013229509A true JP2013229509A (ja) | 2013-11-07 |
JP6014357B2 JP6014357B2 (ja) | 2016-10-25 |
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JP2012101541A Active JP6014357B2 (ja) | 2012-04-26 | 2012-04-26 | 半導体装置 |
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US (3) | US8946827B2 (ja) |
JP (1) | JP6014357B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018170457A (ja) * | 2017-03-30 | 2018-11-01 | エイブリック株式会社 | 抵抗分圧回路を有する半導体装置 |
EP3422406A1 (en) | 2017-06-27 | 2019-01-02 | Renesas Electronics Corporation | Semiconductor device |
JP2021048207A (ja) * | 2019-09-18 | 2021-03-25 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
WO2021137693A1 (en) * | 2019-12-31 | 2021-07-08 | Mimos Berhad | Integrated rc oscillator for generating an oscillation signal with a trimming signal |
US11394371B2 (en) | 2018-08-30 | 2022-07-19 | Renesas Electronics Corporation | Semiconductor device |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6014357B2 (ja) * | 2012-04-26 | 2016-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9917507B2 (en) * | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
JP6468368B2 (ja) * | 2015-12-07 | 2019-02-13 | 富士電機株式会社 | 電圧生成回路および過電流検出回路 |
US10734298B2 (en) * | 2018-06-22 | 2020-08-04 | Microchip Technology Incorporated | Methods of reinforcing integrated circuitry of semiconductor devices and related semiconductor devices and packages |
CN108832896B (zh) * | 2018-06-25 | 2021-04-02 | 电子科技大学 | 一种片外可调的弛张型压控振荡器电路 |
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JPS6367765A (ja) * | 1986-09-09 | 1988-03-26 | Nec Corp | 集積回路装置 |
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2014
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2018170457A (ja) * | 2017-03-30 | 2018-11-01 | エイブリック株式会社 | 抵抗分圧回路を有する半導体装置 |
EP3422406A1 (en) | 2017-06-27 | 2019-01-02 | Renesas Electronics Corporation | Semiconductor device |
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JP7153001B2 (ja) | 2019-09-18 | 2022-10-13 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
WO2021137693A1 (en) * | 2019-12-31 | 2021-07-08 | Mimos Berhad | Integrated rc oscillator for generating an oscillation signal with a trimming signal |
Also Published As
Publication number | Publication date |
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US8946827B2 (en) | 2015-02-03 |
US9300245B2 (en) | 2016-03-29 |
JP6014357B2 (ja) | 2016-10-25 |
US20130285207A1 (en) | 2013-10-31 |
US20160204741A1 (en) | 2016-07-14 |
US20150116047A1 (en) | 2015-04-30 |
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