JP2013201458A5 - - Google Patents

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Publication number
JP2013201458A5
JP2013201458A5 JP2013133942A JP2013133942A JP2013201458A5 JP 2013201458 A5 JP2013201458 A5 JP 2013201458A5 JP 2013133942 A JP2013133942 A JP 2013133942A JP 2013133942 A JP2013133942 A JP 2013133942A JP 2013201458 A5 JP2013201458 A5 JP 2013201458A5
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Japan
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ferromagnetic
tunnel junction
layer
magnetic tunnel
free layer
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JP2013133942A
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Japanese (ja)
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JP2013201458A (ja
JP5973959B2 (ja
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Priority claimed from US12/946,900 external-priority patent/US8508973B2/en
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JP2013133942A 2010-11-16 2013-06-26 面外磁気トンネル接合セルの強磁性自由層の磁化方向を切換える方法、磁気メモリシステムおよびデータを電子的に記憶する方法 Expired - Fee Related JP5973959B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/946,900 US8508973B2 (en) 2010-11-16 2010-11-16 Method of switching out-of-plane magnetic tunnel junction cells
US12/946,900 2010-11-16

Related Parent Applications (1)

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JP2011231948A Division JP2012109554A (ja) 2010-11-16 2011-10-21 面外磁気トンネル接合セルの強磁性自由層の磁化方向を切換える方法、磁気メモリシステムおよびデータを電子的に記憶する方法

Publications (3)

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JP2013201458A JP2013201458A (ja) 2013-10-03
JP2013201458A5 true JP2013201458A5 (enExample) 2014-11-27
JP5973959B2 JP5973959B2 (ja) 2016-08-23

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JP2011231948A Pending JP2012109554A (ja) 2010-11-16 2011-10-21 面外磁気トンネル接合セルの強磁性自由層の磁化方向を切換える方法、磁気メモリシステムおよびデータを電子的に記憶する方法
JP2013133942A Expired - Fee Related JP5973959B2 (ja) 2010-11-16 2013-06-26 面外磁気トンネル接合セルの強磁性自由層の磁化方向を切換える方法、磁気メモリシステムおよびデータを電子的に記憶する方法

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JP2011231948A Pending JP2012109554A (ja) 2010-11-16 2011-10-21 面外磁気トンネル接合セルの強磁性自由層の磁化方向を切換える方法、磁気メモリシステムおよびデータを電子的に記憶する方法

Country Status (4)

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US (2) US8508973B2 (enExample)
JP (2) JP2012109554A (enExample)
KR (1) KR101338050B1 (enExample)
CN (1) CN102467954B (enExample)

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