JP2012109554A - 面外磁気トンネル接合セルの強磁性自由層の磁化方向を切換える方法、磁気メモリシステムおよびデータを電子的に記憶する方法 - Google Patents

面外磁気トンネル接合セルの強磁性自由層の磁化方向を切換える方法、磁気メモリシステムおよびデータを電子的に記憶する方法 Download PDF

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Publication number
JP2012109554A
JP2012109554A JP2011231948A JP2011231948A JP2012109554A JP 2012109554 A JP2012109554 A JP 2012109554A JP 2011231948 A JP2011231948 A JP 2011231948A JP 2011231948 A JP2011231948 A JP 2011231948A JP 2012109554 A JP2012109554 A JP 2012109554A
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Prior art keywords
layer
tunnel junction
ferromagnetic
free layer
magnetic tunnel
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English (en)
Japanese (ja)
Inventor
in-sik Jin
ジン・インシク
Xiaobin Wang
ワン・シャオビン
Yong Lu
ヨン・ルー
Haiwen Xi
シー・ハイウェン
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Seagate Technology LLC
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Seagate Technology LLC
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H01F10/3259—Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2011231948A 2010-11-16 2011-10-21 面外磁気トンネル接合セルの強磁性自由層の磁化方向を切換える方法、磁気メモリシステムおよびデータを電子的に記憶する方法 Pending JP2012109554A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/946,900 US8508973B2 (en) 2010-11-16 2010-11-16 Method of switching out-of-plane magnetic tunnel junction cells
US12/946,900 2010-11-16

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JP2013133942A Division JP5973959B2 (ja) 2010-11-16 2013-06-26 面外磁気トンネル接合セルの強磁性自由層の磁化方向を切換える方法、磁気メモリシステムおよびデータを電子的に記憶する方法

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JP2012109554A true JP2012109554A (ja) 2012-06-07

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JP2013133942A Expired - Fee Related JP5973959B2 (ja) 2010-11-16 2013-06-26 面外磁気トンネル接合セルの強磁性自由層の磁化方向を切換える方法、磁気メモリシステムおよびデータを電子的に記憶する方法

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US (2) US8508973B2 (enExample)
JP (2) JP2012109554A (enExample)
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CN (1) CN102467954B (enExample)

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US10692556B2 (en) 2018-09-28 2020-06-23 Spin Memory, Inc. Defect injection structure and mechanism for magnetic memory
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JP2013201458A (ja) 2013-10-03
KR101338050B1 (ko) 2013-12-09
KR20120052865A (ko) 2012-05-24
CN102467954A (zh) 2012-05-23
JP5973959B2 (ja) 2016-08-23
US8792264B2 (en) 2014-07-29
CN102467954B (zh) 2014-12-17
US20120120708A1 (en) 2012-05-17
US8508973B2 (en) 2013-08-13
US20130329490A1 (en) 2013-12-12

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