CN102467954B - 切换向平面外的磁性隧道结单元的方法 - Google Patents
切换向平面外的磁性隧道结单元的方法 Download PDFInfo
- Publication number
- CN102467954B CN102467954B CN201110383019.5A CN201110383019A CN102467954B CN 102467954 B CN102467954 B CN 102467954B CN 201110383019 A CN201110383019 A CN 201110383019A CN 102467954 B CN102467954 B CN 102467954B
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- Prior art keywords
- free layer
- ferromagnetic
- tunneling junction
- ferromagnetic free
- magnetic tunneling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 74
- 230000005415 magnetization Effects 0.000 claims abstract description 48
- 230000005641 tunneling Effects 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 claims description 22
- 230000000452 restraining effect Effects 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 17
- 241001269238 Data Species 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000013016 damping Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- -1 rare-earth transition metal Chemical class 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910005335 FePt Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 230000005303 antiferromagnetism Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
- H01F10/3259—Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/946,900 US8508973B2 (en) | 2010-11-16 | 2010-11-16 | Method of switching out-of-plane magnetic tunnel junction cells |
| US12/946,900 | 2010-11-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102467954A CN102467954A (zh) | 2012-05-23 |
| CN102467954B true CN102467954B (zh) | 2014-12-17 |
Family
ID=46047637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110383019.5A Expired - Fee Related CN102467954B (zh) | 2010-11-16 | 2011-11-15 | 切换向平面外的磁性隧道结单元的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8508973B2 (enExample) |
| JP (2) | JP2012109554A (enExample) |
| KR (1) | KR101338050B1 (enExample) |
| CN (1) | CN102467954B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US9728240B2 (en) * | 2009-04-08 | 2017-08-08 | Avalanche Technology, Inc. | Pulse programming techniques for voltage-controlled magnetoresistive tunnel junction (MTJ) |
| US8541855B2 (en) * | 2011-05-10 | 2013-09-24 | Magic Technologies, Inc. | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications |
| US9293182B2 (en) * | 2011-12-15 | 2016-03-22 | Everspin Technologies, Inc. | Random access memory architecture for reading bit states |
| US9344345B2 (en) * | 2014-03-19 | 2016-05-17 | Micron Technology, Inc. | Memory cells having a self-aligning polarizer |
| JP6365901B2 (ja) * | 2016-09-28 | 2018-08-01 | 株式会社東芝 | 磁気抵抗素子及び磁気記憶装置 |
| KR102522620B1 (ko) | 2016-11-29 | 2023-04-19 | 삼성전자주식회사 | 자기 메모리 소자 및 자기 메모리 소자의 쓰기 방법 |
| CN108738371B (zh) * | 2017-02-24 | 2022-01-25 | Tdk株式会社 | 磁化反转元件、磁阻效应元件和存储设备 |
| US10693056B2 (en) | 2017-12-28 | 2020-06-23 | Spin Memory, Inc. | Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer |
| US10347308B1 (en) | 2017-12-29 | 2019-07-09 | Spin Memory, Inc. | Systems and methods utilizing parallel configurations of magnetic memory devices |
| US10403343B2 (en) | 2017-12-29 | 2019-09-03 | Spin Memory, Inc. | Systems and methods utilizing serial configurations of magnetic memory devices |
| US10803916B2 (en) * | 2017-12-29 | 2020-10-13 | Spin Memory, Inc. | Methods and systems for writing to magnetic memory devices utilizing alternating current |
| US10424357B2 (en) | 2017-12-29 | 2019-09-24 | Spin Memory, Inc. | Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer |
| US10319424B1 (en) | 2018-01-08 | 2019-06-11 | Spin Memory, Inc. | Adjustable current selectors |
| US10192789B1 (en) | 2018-01-08 | 2019-01-29 | Spin Transfer Technologies | Methods of fabricating dual threshold voltage devices |
| US10692556B2 (en) | 2018-09-28 | 2020-06-23 | Spin Memory, Inc. | Defect injection structure and mechanism for magnetic memory |
| US10878870B2 (en) | 2018-09-28 | 2020-12-29 | Spin Memory, Inc. | Defect propagation structure and mechanism for magnetic memory |
| JP7246071B2 (ja) * | 2019-01-21 | 2023-03-27 | 国立研究開発法人産業技術総合研究所 | 磁気記憶装置 |
| TWI704557B (zh) * | 2019-12-24 | 2020-09-11 | 大陸商珠海南北極科技有限公司 | 單次可程式化位元之形成方法 |
Citations (2)
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|---|---|---|---|---|
| US7116529B2 (en) * | 2002-09-06 | 2006-10-03 | Kabushiki Kaisha Toshiba | Magnetoresistive element in which pinned magnetization layers have antiparallel pinned directions, magnetic head and magnetic recording/reproducing apparatus |
| CN1938780A (zh) * | 2004-02-25 | 2007-03-28 | 弘世科技公司 | 利用自旋转移的垂直磁化磁性元件 |
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2010
- 2010-11-16 US US12/946,900 patent/US8508973B2/en active Active
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2011
- 2011-10-21 JP JP2011231948A patent/JP2012109554A/ja active Pending
- 2011-11-10 KR KR1020110117074A patent/KR101338050B1/ko not_active Expired - Fee Related
- 2011-11-15 CN CN201110383019.5A patent/CN102467954B/zh not_active Expired - Fee Related
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2013
- 2013-06-26 JP JP2013133942A patent/JP5973959B2/ja not_active Expired - Fee Related
- 2013-08-12 US US13/964,402 patent/US8792264B2/en active Active
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| US7116529B2 (en) * | 2002-09-06 | 2006-10-03 | Kabushiki Kaisha Toshiba | Magnetoresistive element in which pinned magnetization layers have antiparallel pinned directions, magnetic head and magnetic recording/reproducing apparatus |
| CN1938780A (zh) * | 2004-02-25 | 2007-03-28 | 弘世科技公司 | 利用自旋转移的垂直磁化磁性元件 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013201458A (ja) | 2013-10-03 |
| KR101338050B1 (ko) | 2013-12-09 |
| KR20120052865A (ko) | 2012-05-24 |
| CN102467954A (zh) | 2012-05-23 |
| JP5973959B2 (ja) | 2016-08-23 |
| JP2012109554A (ja) | 2012-06-07 |
| US8792264B2 (en) | 2014-07-29 |
| US20120120708A1 (en) | 2012-05-17 |
| US8508973B2 (en) | 2013-08-13 |
| US20130329490A1 (en) | 2013-12-12 |
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