CN102467954A - 切换向平面外的磁性隧道结单元的方法 - Google Patents

切换向平面外的磁性隧道结单元的方法 Download PDF

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CN102467954A
CN102467954A CN2011103830195A CN201110383019A CN102467954A CN 102467954 A CN102467954 A CN 102467954A CN 2011103830195 A CN2011103830195 A CN 2011103830195A CN 201110383019 A CN201110383019 A CN 201110383019A CN 102467954 A CN102467954 A CN 102467954A
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CN102467954B (zh
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I·金
王小斌
Y·陆
习海文
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Seagate Technology LLC
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Abstract

本发明提供了一种切换向平面外的磁性隧道结单元的铁磁自由层的磁化方向的方法，该方法包括：使交流切换电流流经向平面外的磁性隧道结单元，其中交流切换电流切换铁磁自由层的磁化方向。

Description

切换向平面外的磁性隧道结单元的方法
技术领域
本发明涉及切换向平面外的磁性隧道结单元的方法。
背景技术
新型存储器已展现出与常用形式的存储器相媲美的显著可能性。例如，非易失性自旋转移(spin-transfer)扭矩随机存取存储器(此处称为ST-RAM)作为“通用”存储器已被讨论过。磁性隧道结(MTJ)单元由于其高速、相对高的密度和低功耗而在ST-RAM的应用中引起了很多关注。
大多数活动已集中在具有向平面内的(in-plane)磁各向异性的MTJ单元。预测具有向平面外的(out-plane)磁化方向的MTJ单元能够实现比具有相同磁各向异性场的向平面内的MTJ单元小的切换电流。因此，向平面外的磁化方向MTJ单元以及使用它们的方法引起了极大的关注。
发明内容
本公开涉及经常被称为磁性隧道结单元的磁性自旋扭矩存储单元以及使用它们的方法，这些磁性自旋扭矩存储器单元具有与晶片平面垂直对准的、或“向平面外的”关联铁磁层的磁各向异性(即，磁化方向)。
本公开的一个特定实施例是切换向平面外的磁性隧道结单元的铁磁自由层的磁化方向的方法，该方法包括：使交流切换电流流经向平面外的磁性隧道结单元，其中交流切换电流切换铁磁自由层的磁化方向。
本公开的另一特定实施例是磁性存储系统，该磁性存储系统包括：具有铁磁自由层、阻挡层和铁磁基准层的磁性隧道结单元，其中阻挡层定位在铁磁基准层和铁磁自由层之间，并且铁磁自由层和铁磁基准层的磁化方向是向平面外；以及电连接到磁性隧道结单元的交流电流源。
本公开的又一特定实施例是电存储数据的方法，该方法包括：设置向平面外的磁性隧道结存储器单元，向平面外的磁性隧道结存储器单元包括铁磁自由层、阻挡层和铁磁基准层，其中阻挡层定位在铁磁基准层和铁磁自由层之间，并且铁磁自由层和铁磁基准层的磁化方向是向平面外的；并且使交流切换电流流经向平面外的磁性隧道结单元，其中交流切换电流切换铁磁自由层的磁化方向，由此存储数据位。
通过阅读以下详细描述，这些以及各个其他特征和优点将是显而易见的。
附图说明
考虑以下结合附图对本公开的各个实施例的详细描述，可更完整地理解本公开，在附图中：
图1A是说明性MTJ单元的示意图；图1B是包括可任选钉扎层的说明性MTJ单元的示意图；图1C是在低电阻状态下具有向平面外的磁化方向的说明性MTJ单元的示意图；图1D是高电阻状态下的说明性磁性隧道结存储单元的示意侧视图；
图2A是示出直流(DC)切换电流对磁化方向的旋磁驰豫的影响的示意图；而图2B是示出交流(AC)切换电流对磁化方向的旋磁驰豫的影响的示意图；
图3是包括MTJ单元和晶体管的说明性存储单元的示意图；
图4是说明性存储器阵列的示意图；以及
图5是说明性存储系统的示意图。
这些附图不一定按比例示出。附图中所使用的相同数字表示相同部件。然而，应当理解，在给定附图中使用数字表示部件并不旨在限制在另一附图中用相同数字标记的部件。
具体实施方式
本公开涉及具有磁各向异性的磁性隧道结(MTJ)单元的各个实施例，磁各向异性导致关联铁磁层的磁化方向是与晶片平面垂直对准的、或“向平面外的”。
在以下描述中，参考形成本说明书一部分的一组附图，其中通过图示示出了若干具体实施例。应当理解，构想并可作出其他实施例而不背离本公开的范围或精神。因此，以下详细描述不采取限制性含义。本文中所提供的任何定义用于方便理解本文中频繁使用的某些术语，而不旨在限制本公开的范围。
除非另外指出，否则在说明书和权利要求书中使用的表示特征大小、量和物理性质的所有数字应当理解为在任何情况下均由术语“约”修饰。因此，除非相反地指出，否则在上述说明书和所附权利要求中阐明的数值参数是近似值，这些近似值可利用本文中公开的教示根据本领域技术人员所寻求获得的期望性质而变化。
如本说明书和所附权利要求书中所使用的，单数形式“一”、“一个”和“该”涵盖具有复数引用物的实施例，除非该内容另外明确地指出。如本说明书和所附权利要求书中所使用的，术语“或”一般以包括“和/或”的含义来使用，除非该内容另外明确地指出。
尽管本公开不限于此，但通过讨论以下所提供的示例将获得对本公开的各个方面的理解。
图1A示出具有向平面外的磁化方向的说明性MTJ单元100。MTJ单元100包括相对柔软的铁磁自由层110、铁磁基准(例如，固定)层140和氧化物阻挡层130。铁磁自由层110和铁磁基准层140被氧化阻挡层130或非磁性隧道阻挡层分隔开。MTJ单元100还可被描述为具有定位在铁磁基准层和铁磁自由层之间的氧化物阻挡层。
自由层110和基准层140各自具有相关联的磁化方向。层110和140的磁化方向不平行于层延伸和其上形成有MTJ单元100的晶片衬底的平面取向。在一些实施例中，层110和140的磁化方向可被称为“向平面外的”。在一些实施例中，层110和140的磁化方向可被称为“至少基本垂直的”。在一些实施例中，层110和140的磁化方向可被称为“垂直的”。自由层110的磁化方向比基准层140的磁化方向容易切换。诸如籽晶层、覆盖层、或其他层之类的其他可任选层可包括在MTJ单元100中，即使它们未在这些附图中示出。
自由层110和基准层140可独立地由诸如例如Fe、Co、或Ni及其合金(诸如NiFe和CoFe)等任何有用铁磁(FM)材料制成。自由层110和基准层140中的一个或两个都可以是单层或多层。组成自由层和固定层的材料的具体示例可包括：具有诸如TbCoFe、GdCoFe和FePt之类的垂直各向异性的单层；诸如Co/Pt Co/Ni多层之类的叠层；以及用诸如Co/Fe和CoFeB合金之类的高自旋极化铁磁材料层叠的垂直各向异性材料。在一些实施例中，自由层110可包括诸如Co之类的高自旋极化层和诸如GdFeCo之类的稀土过渡性金属合金层。在一些实施例中，基准层140可包括诸如Co之类的高自旋极化层和诸如TbFeCo之类的稀土过渡性金属合金层。
阻挡层130可由诸如例如氧化物材料(例如，A12O3、TiOx或MgOx)等电绝缘材料或半导体材料制成。阻挡层130可以是单层、或者可以是与另一氧化物或金属(例如，Mg/MgO双层)层叠的层。可取决于工艺可行性和设备可靠性，用自由层110或基准层140可任选地图案化阻挡层130。
图1B示出MTJ单元的另一示例性实施例。该MTJ单元101包括设置成逼近或毗邻基准层140的可任选钉扎层150。钉扎层150(如果存在的话)则钉扎基准层140的磁化方向。在一些实施例中，这种钉扎层150可具有零磁化，但仍然可钉扎基准层140的磁化方向。钉扎层(如果存在的话)可以是诸如PtMn、IrMn及其他的反铁磁性有序材料(AFM)。
图1C示出低电阻状态下的磁性隧道结存储单元105，其中自由层110的磁化方向与基准层140的磁化方向处于相同方向。在图1D中，磁性隧道结单元106处于高电阻状态下，其中自由层110的磁化方向处于自由层140的磁化方向的相反方向。在一些实施例中，低电阻状态可以是“0”数据状态、高电阻状态可以是“1”数据状态，然而在其他实施例中，低电阻状态可以是“1”、高电阻状态可以是“0”。
当流经磁性隧道结单元的磁性层的切换电流变成自旋极化的并且将自旋扭矩施加到自由层110上时，经由自旋转移而发生切换电阻状态并且因此切换磁性隧道结单元的数据状态。当将足够的自旋扭矩施加到自由层110时，自由层110的磁化方向可在两个相反方向之间切换，并且因此，磁性隧道结单元可在低电阻状态和高电阻状态之间切换。
此处公开了切换向平面外的磁性隧道结单元的铁磁自由层的磁化方向，该切换包括使交流切换电流流经MTJ单元的步骤。此处也可被称为“AC”的交流电流是电荷(或电子)的移动周期性地反向的电流。流经MTJ单元的交流切换电流的施加(经由如上所讨论的自旋扭矩)使自由层的磁化方向得以切换。在所公开的实施例中，旋磁驰豫也有助于切换自由层的磁化方向。这可提供较低切换电流的使用以用来将数据写入MTJ单元，由此允许较少的功耗。
磁场的旋磁驰豫可由等式1描述：
τ ~ g = ( M ~ × H ~ ) (等式1)
其中
Figure BSA00000622663200052
是自由层的磁化饱和，而
Figure BSA00000622663200053
是电流所生成的磁场。相反地，阻尼驰豫可由等式2描述：
τ ~ d = α M ~ × ( M ~ × H ~ ) (等式2)
其中
Figure BSA00000622663200055
和
Figure BSA00000622663200056
如上给出，并且α约为0.01。由于幅度为α，因此在任何给定系统中旋磁驰豫比阻尼驰豫高至少约100倍。因此，如果旋磁驰豫可用于帮助切换铁磁自由层的磁化方向，则可降低总切换电流。
在图2A中示意性地示出直流电流对旋磁驰豫的影响。如图2A中可见，直流切换电流在所有方向上将自由层的磁化方向同等地拉(由实线箭头所示)离中心，由此有效地消除旋磁驰豫的影响。相反地，在图2B中示出交流切换电流的影响。如图2B中可见，此情况下的旋磁驰豫本身并未消除并且因此帮助切换自由层的磁化方向。在使用交流切换电流的实施例中，交流切换电流可感生绕开(circumnavigate)磁性隧道结单元的磁场，如图2B中可见。所感生的磁场可在铁磁自由层的磁化方向上诱发旋磁驰豫。这种旋磁驰豫可有助于切换铁磁自由层。由于旋磁驰豫对切换的贡献，可使用较低的切换电流，这可提供可在较低隔离要求的情况下运行的存储器。
在一些实施例中，交流切换电流的频率可与铁磁自由层的旋磁频率相匹配。自由层的旋磁频率是自由层的磁性质和自由层的几何结构的函数。旋磁频率一般处于GHz频率范围内。
交流切换电流可经由阻挡层从自由层流到基准层；或经由阻挡层从基准层流到自由层。
所公开的方法还可任选地包括读取或感测MTJ单元的电阻状态或数据。可通过使读取电流流经MTJ单元来确定MTJ单元的电阻状态。在一些实施例中，读取电流可以是直流读取电流。所测量或感测的电阻(或电压)可与基准电阻(或电压)进行比较。在一些实施例中，读取电流的振幅可小于切换电流的振幅。在一些实施例中，振幅比交流切换电流小的直流读取电流可用于读取或感测MTJ单元的电阻。
此处还公开了电存储数据的方法，该方法包括设置所公开的MTJ单元。设置可包括制造、购买、配置用于电存储数据的系统内的MTJ单元、或其他动作。该方法还可包括如上所述的使交流切换电流流经MTJ单元来切换铁磁自由层的磁化方向。切换铁磁自由层的磁化方向可用来存储数据位，0(例如，如果自由层与基准层平行)或1(例如，如果自由层与基准层相反)。交流切换电流流经MTJ的方向将指示0或1被存储在MTJ中。
这种方法还可包括使读取电流流经MTJ单元来测量或感测MTJ单元的电阻。在读取电流可流经MTJ单元之前、之后或两者，第二(和后续)交流切换电流(在相同或不同的方向上)还可流经MTJ单元。
图3是说明性存储单元300的示意图，存储单元300包括经由导电元件340电连接到晶体管320(诸如基于半导体的晶体管)的MTJ单元310。MTJ单元310可以是本文中所描述的任何MTJ单元。晶体管320可包括具有掺杂区(例如，示为n掺杂区)以及掺杂区之间的沟道区(例如，示为p掺杂沟道区)的半导体衬底350。晶体管320可包括栅极360，栅极360电耦合到字线(WL)以允许选择并且允许电流从位线(BL)流到MTJ单元310。
还可利用半导体制造技术在半导体衬底上形成可编程金属化存储部件的阵列。图4是说明性存储器阵列400的示意性电路图。此处描述的多个存储部件450可被排列在阵列中以形成存储器阵列400。存储器阵列400可包括多条平行的导电位线410。存储器阵列400还可包括多条平行的导电字线420，导电字线420一般与位线410正交。字线420和位线410可形成交叉点阵列，其中存储部件450可被设置在每个交叉点处。可使用常规的半导体制造技术来形成存储部件450和存储器阵列400。
此处还公开了存储系统。所公开的存储系统可包括MTJ单元和交流电流源。在图5中示意性地示出示例性系统。如上所讨论的，磁性存储系统500可包括MTJ单元505，MTJ单元505包括自由层510、阻挡层530和基准层540。系统500还可包括电连接到MTJ单元505的交流电流源501。虽然此处未示出，但是晶体管还可任选地电耦合到MTJ单元505。这些系统还可任选地包括例如构成阵列的多个MTJ单元。在这种实施例中，多个MTJ单元中的每一个可电连接到交流电流源。这些系统还可任选地包括直流电流源502，直流电流源502电连接到MTJ单元505(或多个MTJ单元中的每一个)。直流电流源可用于读取或感测MTJ单元(或多个MTJ单元)的电阻。
如本文中所公开的MTJ单元可使用各种技术来制造，包括例如等离子体气相沉积(PVD)、蒸镀和分子束外延(MBE)。
如本文中所公开的切换MTJ单元的方法、存储数据的方法以及存储系统可用于MRAM应用中。
由此，公开了“切换向平面外的磁性隧道结单元的方法”的各个实施例。上述实现及其他实现在以下权利要求书的范围内。本领域技术人员应当理解，本公开可用除所公开的实施例以外的实施例来实施。所公开的实施例出于说明而非限制的目的而呈现，并且本公开仅由所附权利要求书来限定。

Claims (20)

1.一种切换向平面外的磁性隧道结单元的铁磁自由层的磁化方向的方法，所述方法包括：
使交流切换电流流经向平面外的磁性隧道结单元，其中所述交流切换电流切换所述铁磁自由层的磁化方向。
2.如权利要求1所述的方法，其特征在于，所述交流切换电流的频率与所述铁磁自由层的旋磁频率相匹配。
3.如权利要求2所述的方法，其特征在于，所述交流切换电流感生绕开所述磁性隧道结单元的磁场。
4.如权利要求3所述的方法，其特征在于，所述磁场在所述铁磁自由层的磁化方向上诱发旋磁驰豫。
5.如权利要求1所述的方法，其特征在于，所述磁性隧道结单元包括铁磁自由层、阻挡层和铁磁基准层，其中所述阻挡层定位在所述铁磁自由层和铁磁基准层之间，并且其中所述交流切换电流从所述铁磁基准层流到所述铁磁自由层。
6.如权利要求1所述的方法，其特征在于，所述磁性隧道结单元包括铁磁自由层、阻挡层和铁磁基准层，其中所述阻挡层定位在所述铁磁自由层和铁磁基准层之间，并且其中所述交流切换电流从所述铁磁自由层流到所述铁磁基准层。
7.如权利要求1所述的方法，还包括：使直流读取电流流经所述磁性隧道结单元，以及感测所述磁性隧道结单元的电阻。
8.如权利要求7所述的方法，其特征在于，所述直流读取电流的振幅比所述交流切换电流的振幅小。
9.一种磁性存储系统，包括：
具有铁磁自由层、阻挡层和铁磁基准层的磁性隧道结单元，其中所述阻挡层定位在所述铁磁基准层和铁磁自由层之间，并且所述铁磁自由层和铁磁基准层的磁化方向是向平面外的；以及
电连接到所述磁性隧道结单元的交流电源。
10.如权利要求9所述的磁性存储系统，其特征在于，所述铁磁自由层和铁磁基准层的磁化方向是至少基本垂直的。
11.如权利要求9所述的磁性存储系统，其特征在于，所述铁磁自由层和铁磁基准层的磁化方向是垂直的。
12.如权利要求9所述的磁性存储系统，其特征在于，还包括构成阵列的多个磁性隧道结单元。
13.如权利要求9所述的磁性存储系统，其特征在于，还包括电连接到所述磁性隧道结单元的直流电源。
14.如权利要求9所述的磁性存储系统，还包括：构成阵列的多个磁性隧道结单元，其中所述多个磁性隧道结单元中的每一个电连接到所述交流电源；以及直流电源，其中所述多个磁性隧道结单元中的每一个电连接到所述直流电源。
15.一种电存储数据的方法，包括：
设置向平面外的磁性隧道结存储器单元，所述向平面外的磁性隧道结存储器单元包括铁磁自由层、阻挡层和铁磁基准层，其中所述阻挡层定位在所述铁磁基准层和铁磁自由层之间，并且所述铁磁自由层和铁磁基准层的磁化方向是向平面外的；以及
使交流切换电流流经所述向平面外的磁性隧道结单元，其中所述交流切换电流切换所述铁磁自由层的磁化方向，由此存储数据位。
16.如权利要求15所述的方法，其特征在于，所述交流切换电流的频率与所述铁磁自由层的旋磁频率相匹配。
17.如权利要求16所述的方法，其特征在于，所述交流切换电流感生绕开所述磁性隧道结单元的磁场。
18.如权利要求15所述的方法，其特征在于，所述交流切换电流从所述铁磁基准层流到所述铁磁自由层或从所述铁磁自由层流到所述铁磁基准层。
19.如权利要求15所述的方法，其特征在于，还包括：使直流读取电流流经所述磁性隧道结单元，以及感测所述磁性隧道结单元的电阻。
20.如权利要求15所述的方法，其特征在于，还包括：
使直流读取电流流经所述磁性隧道结单元，并且感测所述磁性隧道结单元的电阻；以及
使第二交流切换电流流经所述磁性隧道结单元以对所述铁磁自由层的磁化方向进行第二次切换。
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