KR101338050B1 - 평면외 자기 터널 접합 셀들을 스위칭하는 방법 - Google Patents

평면외 자기 터널 접합 셀들을 스위칭하는 방법 Download PDF

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Publication number
KR101338050B1
KR101338050B1 KR1020110117074A KR20110117074A KR101338050B1 KR 101338050 B1 KR101338050 B1 KR 101338050B1 KR 1020110117074 A KR1020110117074 A KR 1020110117074A KR 20110117074 A KR20110117074 A KR 20110117074A KR 101338050 B1 KR101338050 B1 KR 101338050B1
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South Korea
Prior art keywords
tunnel junction
magnetic tunnel
free layer
ferromagnetic
layer
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Expired - Fee Related
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KR1020110117074A
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English (en)
Korean (ko)
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KR20120052865A (ko
Inventor
인식 진
시아오빈 왕
용 루
하이웬 시
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시게이트 테크놀로지 엘엘씨
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H01F10/3259—Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020110117074A 2010-11-16 2011-11-10 평면외 자기 터널 접합 셀들을 스위칭하는 방법 Expired - Fee Related KR101338050B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/946,900 US8508973B2 (en) 2010-11-16 2010-11-16 Method of switching out-of-plane magnetic tunnel junction cells
US12/946,900 2010-11-16

Publications (2)

Publication Number Publication Date
KR20120052865A KR20120052865A (ko) 2012-05-24
KR101338050B1 true KR101338050B1 (ko) 2013-12-09

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KR1020110117074A Expired - Fee Related KR101338050B1 (ko) 2010-11-16 2011-11-10 평면외 자기 터널 접합 셀들을 스위칭하는 방법

Country Status (4)

Country Link
US (2) US8508973B2 (enExample)
JP (2) JP2012109554A (enExample)
KR (1) KR101338050B1 (enExample)
CN (1) CN102467954B (enExample)

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US8541855B2 (en) * 2011-05-10 2013-09-24 Magic Technologies, Inc. Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
US9293182B2 (en) * 2011-12-15 2016-03-22 Everspin Technologies, Inc. Random access memory architecture for reading bit states
US9344345B2 (en) * 2014-03-19 2016-05-17 Micron Technology, Inc. Memory cells having a self-aligning polarizer
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KR102522620B1 (ko) 2016-11-29 2023-04-19 삼성전자주식회사 자기 메모리 소자 및 자기 메모리 소자의 쓰기 방법
CN108738371B (zh) * 2017-02-24 2022-01-25 Tdk株式会社 磁化反转元件、磁阻效应元件和存储设备
US10693056B2 (en) 2017-12-28 2020-06-23 Spin Memory, Inc. Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
US10347308B1 (en) 2017-12-29 2019-07-09 Spin Memory, Inc. Systems and methods utilizing parallel configurations of magnetic memory devices
US10403343B2 (en) 2017-12-29 2019-09-03 Spin Memory, Inc. Systems and methods utilizing serial configurations of magnetic memory devices
US10803916B2 (en) * 2017-12-29 2020-10-13 Spin Memory, Inc. Methods and systems for writing to magnetic memory devices utilizing alternating current
US10424357B2 (en) 2017-12-29 2019-09-24 Spin Memory, Inc. Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer
US10319424B1 (en) 2018-01-08 2019-06-11 Spin Memory, Inc. Adjustable current selectors
US10192789B1 (en) 2018-01-08 2019-01-29 Spin Transfer Technologies Methods of fabricating dual threshold voltage devices
US10692556B2 (en) 2018-09-28 2020-06-23 Spin Memory, Inc. Defect injection structure and mechanism for magnetic memory
US10878870B2 (en) 2018-09-28 2020-12-29 Spin Memory, Inc. Defect propagation structure and mechanism for magnetic memory
JP7246071B2 (ja) * 2019-01-21 2023-03-27 国立研究開発法人産業技術総合研究所 磁気記憶装置
TWI704557B (zh) * 2019-12-24 2020-09-11 大陸商珠海南北極科技有限公司 單次可程式化位元之形成方法

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Publication number Publication date
JP2013201458A (ja) 2013-10-03
KR20120052865A (ko) 2012-05-24
CN102467954A (zh) 2012-05-23
JP5973959B2 (ja) 2016-08-23
JP2012109554A (ja) 2012-06-07
US8792264B2 (en) 2014-07-29
CN102467954B (zh) 2014-12-17
US20120120708A1 (en) 2012-05-17
US8508973B2 (en) 2013-08-13
US20130329490A1 (en) 2013-12-12

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