JP2012510731A5 - - Google Patents

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Publication number
JP2012510731A5
JP2012510731A5 JP2011539702A JP2011539702A JP2012510731A5 JP 2012510731 A5 JP2012510731 A5 JP 2012510731A5 JP 2011539702 A JP2011539702 A JP 2011539702A JP 2011539702 A JP2011539702 A JP 2011539702A JP 2012510731 A5 JP2012510731 A5 JP 2012510731A5
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JP
Japan
Prior art keywords
magnetic layer
magnetic
layer
pinned
magnetization direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011539702A
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English (en)
Japanese (ja)
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JP2012510731A (ja
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Publication date
Priority claimed from US12/327,184 external-priority patent/US7859892B2/en
Application filed filed Critical
Publication of JP2012510731A publication Critical patent/JP2012510731A/ja
Publication of JP2012510731A5 publication Critical patent/JP2012510731A5/ja
Pending legal-status Critical Current

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JP2011539702A 2008-12-03 2009-12-03 二重スピントルク基準層を有する磁気ランダムアクセスメモリ Pending JP2012510731A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/327,184 US7859892B2 (en) 2008-12-03 2008-12-03 Magnetic random access memory with dual spin torque reference layers
US12/327,184 2008-12-03
PCT/US2009/066602 WO2010065753A1 (en) 2008-12-03 2009-12-03 Magnetic random access memory with dual spin torque reference layers

Publications (2)

Publication Number Publication Date
JP2012510731A JP2012510731A (ja) 2012-05-10
JP2012510731A5 true JP2012510731A5 (enExample) 2013-01-17

Family

ID=42126026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011539702A Pending JP2012510731A (ja) 2008-12-03 2009-12-03 二重スピントルク基準層を有する磁気ランダムアクセスメモリ

Country Status (6)

Country Link
US (3) US7859892B2 (enExample)
EP (1) EP2374130B1 (enExample)
JP (1) JP2012510731A (enExample)
KR (1) KR20110102404A (enExample)
CN (1) CN102272845A (enExample)
WO (1) WO2010065753A1 (enExample)

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JP5644198B2 (ja) * 2010-06-15 2014-12-24 ソニー株式会社 記憶装置
JP4951095B2 (ja) 2010-06-30 2012-06-13 株式会社東芝 磁気記録ヘッド及び磁気記録装置
DE112012000271B4 (de) 2011-02-16 2022-01-05 International Business Machines Corporation Ferromagnetische Einheit, die hohe Domänenwandgeschwindigkeiten gewährleistet
JP5542856B2 (ja) * 2012-03-21 2014-07-09 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
US8941196B2 (en) * 2012-07-10 2015-01-27 New York University Precessional reversal in orthogonal spin transfer magnetic RAM devices
US8982613B2 (en) 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
CN106030840B (zh) * 2014-03-25 2019-03-01 英特尔公司 磁畴壁逻辑器件及互连
EP3304741A4 (en) * 2015-05-28 2019-05-01 INTEL Corporation EXCLUSIVE OR LOGICAL DEVICE WITH SPIN-ORBIT TORQUE EFFECT
CN107636850B (zh) 2015-06-26 2022-07-05 英特尔公司 低杂散场磁性存储器
US10832749B2 (en) 2015-06-26 2020-11-10 Intel Corporation Perpendicular magnetic memory with symmetric fixed layers
US9911483B1 (en) * 2017-03-21 2018-03-06 International Business Machines Corporation Thermally-assisted spin transfer torque memory with improved bit error rate performance
US10720570B2 (en) * 2017-06-12 2020-07-21 Western Digital Technologies, Inc. Magnetic sensor using spin hall effect
US10770649B1 (en) 2019-02-21 2020-09-08 International Business Machines Corporation Lattice matched tunnel barriers for perpendicularly magnetized Heusler alloys
US11386320B2 (en) * 2019-03-06 2022-07-12 International Business Machines Corporation Magnetic domain wall-based non-volatile, linear and bi-directional synaptic weight element
CN115443548A (zh) * 2020-07-30 2022-12-06 华为技术有限公司 一种磁性隧道结及存储单元
US11917835B2 (en) 2020-12-21 2024-02-27 International Business Machines Corporation Three-dimensional funnel-like spin transfer torque MRAM cell with a non-uniform thicknesses in each layer

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