JP2012510731A - 二重スピントルク基準層を有する磁気ランダムアクセスメモリ - Google Patents

二重スピントルク基準層を有する磁気ランダムアクセスメモリ Download PDF

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Publication number
JP2012510731A
JP2012510731A JP2011539702A JP2011539702A JP2012510731A JP 2012510731 A JP2012510731 A JP 2012510731A JP 2011539702 A JP2011539702 A JP 2011539702A JP 2011539702 A JP2011539702 A JP 2011539702A JP 2012510731 A JP2012510731 A JP 2012510731A
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Japan
Prior art keywords
magnetic layer
magnetic
layer
pinned
magnetization direction
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JP2011539702A
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English (en)
Japanese (ja)
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JP2012510731A5 (enExample
Inventor
クリントン，トマス
セイグラー，マイク
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Seagate Technology LLC
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Seagate Technology LLC
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Publication of JP2012510731A publication Critical patent/JP2012510731A/ja
Publication of JP2012510731A5 publication Critical patent/JP2012510731A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2011539702A 2008-12-03 2009-12-03 二重スピントルク基準層を有する磁気ランダムアクセスメモリ Pending JP2012510731A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/327,184 US7859892B2 (en) 2008-12-03 2008-12-03 Magnetic random access memory with dual spin torque reference layers
US12/327,184 2008-12-03
PCT/US2009/066602 WO2010065753A1 (en) 2008-12-03 2009-12-03 Magnetic random access memory with dual spin torque reference layers

Publications (2)

Publication Number Publication Date
JP2012510731A true JP2012510731A (ja) 2012-05-10
JP2012510731A5 JP2012510731A5 (enExample) 2013-01-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011539702A Pending JP2012510731A (ja) 2008-12-03 2009-12-03 二重スピントルク基準層を有する磁気ランダムアクセスメモリ

Country Status (6)

Country Link
US (3) US7859892B2 (enExample)
EP (1) EP2374130B1 (enExample)
JP (1) JP2012510731A (enExample)
KR (1) KR20110102404A (enExample)
CN (1) CN102272845A (enExample)
WO (1) WO2010065753A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197344A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 磁気抵抗効果素子及び磁気メモリ
JP2022522128A (ja) * 2019-03-06 2022-04-14 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁壁ベースの不揮発性、線形、かつ双方向性のシナプス重み素子

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JP5142923B2 (ja) * 2008-09-30 2013-02-13 株式会社東芝 磁性発振素子、磁気センサ及び磁気記録再生装置
JP5644198B2 (ja) * 2010-06-15 2014-12-24 ソニー株式会社 記憶装置
JP4951095B2 (ja) 2010-06-30 2012-06-13 株式会社東芝 磁気記録ヘッド及び磁気記録装置
DE112012000271B4 (de) * 2011-02-16 2022-01-05 International Business Machines Corporation Ferromagnetische Einheit, die hohe Domänenwandgeschwindigkeiten gewährleistet
US8941196B2 (en) * 2012-07-10 2015-01-27 New York University Precessional reversal in orthogonal spin transfer magnetic RAM devices
US8982613B2 (en) 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
EP3123537A4 (en) * 2014-03-25 2018-02-14 Intel Corporation Magnetic domain wall logic devices and interconnect
EP3304741A4 (en) * 2015-05-28 2019-05-01 INTEL Corporation EXCLUSIVE OR LOGICAL DEVICE WITH SPIN-ORBIT TORQUE EFFECT
KR102426415B1 (ko) * 2015-06-26 2022-07-29 인텔 코포레이션 대칭 고정 층을 갖는 수직 자기 메모리
WO2016209267A1 (en) 2015-06-26 2016-12-29 Intel Corporation Low stray field magnetic memory
US9911483B1 (en) * 2017-03-21 2018-03-06 International Business Machines Corporation Thermally-assisted spin transfer torque memory with improved bit error rate performance
US10720570B2 (en) * 2017-06-12 2020-07-21 Western Digital Technologies, Inc. Magnetic sensor using spin hall effect
US10770649B1 (en) 2019-02-21 2020-09-08 International Business Machines Corporation Lattice matched tunnel barriers for perpendicularly magnetized Heusler alloys
CN115443548A (zh) * 2020-07-30 2022-12-06 华为技术有限公司 一种磁性隧道结及存储单元
US11917835B2 (en) 2020-12-21 2024-02-27 International Business Machines Corporation Three-dimensional funnel-like spin transfer torque MRAM cell with a non-uniform thicknesses in each layer

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JP2008028362A (ja) * 2006-06-22 2008-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ

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US7035138B2 (en) * 2000-09-27 2006-04-25 Canon Kabushiki Kaisha Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions
US6714444B2 (en) * 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6888742B1 (en) * 2002-08-28 2005-05-03 Grandis, Inc. Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6838740B2 (en) * 2002-09-27 2005-01-04 Grandis, Inc. Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6958927B1 (en) * 2002-10-09 2005-10-25 Grandis Inc. Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
US7190611B2 (en) * 2003-01-07 2007-03-13 Grandis, Inc. Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
US6829161B2 (en) * 2003-01-10 2004-12-07 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6847547B2 (en) * 2003-02-28 2005-01-25 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
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US7369427B2 (en) * 2004-09-09 2008-05-06 Grandis, Inc. Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
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JP4877575B2 (ja) * 2005-05-19 2012-02-15 日本電気株式会社 磁気ランダムアクセスメモリ
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197344A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 磁気抵抗効果素子及び磁気メモリ
JP2022522128A (ja) * 2019-03-06 2022-04-14 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁壁ベースの不揮発性、線形、かつ双方向性のシナプス重み素子
JP7488005B2 (ja) 2019-03-06 2024-05-21 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁壁ベースの不揮発性、線形、かつ双方向性のシナプス重み素子

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US20110298069A1 (en) 2011-12-08
WO2010065753A1 (en) 2010-06-10
EP2374130A1 (en) 2011-10-12
US20100134923A1 (en) 2010-06-03
EP2374130B1 (en) 2013-09-18
US8199565B2 (en) 2012-06-12
US7859892B2 (en) 2010-12-28
US20110069535A1 (en) 2011-03-24
KR20110102404A (ko) 2011-09-16
US8023317B2 (en) 2011-09-20
CN102272845A (zh) 2011-12-07

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