JP2012510731A - 二重スピントルク基準層を有する磁気ランダムアクセスメモリ - Google Patents

二重スピントルク基準層を有する磁気ランダムアクセスメモリ Download PDF

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Publication number
JP2012510731A
JP2012510731A JP2011539702A JP2011539702A JP2012510731A JP 2012510731 A JP2012510731 A JP 2012510731A JP 2011539702 A JP2011539702 A JP 2011539702A JP 2011539702 A JP2011539702 A JP 2011539702A JP 2012510731 A JP2012510731 A JP 2012510731A
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Japan
Prior art keywords
magnetic layer
magnetic
layer
pinned
magnetization direction
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JP2011539702A
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English (en)
Japanese (ja)
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JP2012510731A5 (enExample
Inventor
クリントン，トマス
セイグラー，マイク
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Seagate Technology LLC
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Seagate Technology LLC
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Publication of JP2012510731A publication Critical patent/JP2012510731A/ja
Publication of JP2012510731A5 publication Critical patent/JP2012510731A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2011539702A 2008-12-03 2009-12-03 二重スピントルク基準層を有する磁気ランダムアクセスメモリ Pending JP2012510731A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/327,184 US7859892B2 (en) 2008-12-03 2008-12-03 Magnetic random access memory with dual spin torque reference layers
US12/327,184 2008-12-03
PCT/US2009/066602 WO2010065753A1 (en) 2008-12-03 2009-12-03 Magnetic random access memory with dual spin torque reference layers

Publications (2)

Publication Number Publication Date
JP2012510731A true JP2012510731A (ja) 2012-05-10
JP2012510731A5 JP2012510731A5 (enExample) 2013-01-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011539702A Pending JP2012510731A (ja) 2008-12-03 2009-12-03 二重スピントルク基準層を有する磁気ランダムアクセスメモリ

Country Status (6)

Country Link
US (3) US7859892B2 (enExample)
EP (1) EP2374130B1 (enExample)
JP (1) JP2012510731A (enExample)
KR (1) KR20110102404A (enExample)
CN (1) CN102272845A (enExample)
WO (1) WO2010065753A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197344A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 磁気抵抗効果素子及び磁気メモリ
JP2022522128A (ja) * 2019-03-06 2022-04-14 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁壁ベースの不揮発性、線形、かつ双方向性のシナプス重み素子

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8144425B2 (en) * 2003-12-15 2012-03-27 Seagate Technology Llc Magnetic recording head with compact yoke
JP5142923B2 (ja) * 2008-09-30 2013-02-13 株式会社東芝 磁性発振素子、磁気センサ及び磁気記録再生装置
JP5644198B2 (ja) * 2010-06-15 2014-12-24 ソニー株式会社 記憶装置
JP4951095B2 (ja) 2010-06-30 2012-06-13 株式会社東芝 磁気記録ヘッド及び磁気記録装置
DE112012000271B4 (de) 2011-02-16 2022-01-05 International Business Machines Corporation Ferromagnetische Einheit, die hohe Domänenwandgeschwindigkeiten gewährleistet
US8941196B2 (en) * 2012-07-10 2015-01-27 New York University Precessional reversal in orthogonal spin transfer magnetic RAM devices
US8982613B2 (en) 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
CN106030840B (zh) * 2014-03-25 2019-03-01 英特尔公司 磁畴壁逻辑器件及互连
EP3304741A4 (en) * 2015-05-28 2019-05-01 INTEL Corporation EXCLUSIVE OR LOGICAL DEVICE WITH SPIN-ORBIT TORQUE EFFECT
CN107636850B (zh) 2015-06-26 2022-07-05 英特尔公司 低杂散场磁性存储器
US10832749B2 (en) 2015-06-26 2020-11-10 Intel Corporation Perpendicular magnetic memory with symmetric fixed layers
US9911483B1 (en) * 2017-03-21 2018-03-06 International Business Machines Corporation Thermally-assisted spin transfer torque memory with improved bit error rate performance
US10720570B2 (en) * 2017-06-12 2020-07-21 Western Digital Technologies, Inc. Magnetic sensor using spin hall effect
US10770649B1 (en) 2019-02-21 2020-09-08 International Business Machines Corporation Lattice matched tunnel barriers for perpendicularly magnetized Heusler alloys
CN115443548A (zh) * 2020-07-30 2022-12-06 华为技术有限公司 一种磁性隧道结及存储单元
US11917835B2 (en) 2020-12-21 2024-02-27 International Business Machines Corporation Three-dimensional funnel-like spin transfer torque MRAM cell with a non-uniform thicknesses in each layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028362A (ja) * 2006-06-22 2008-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7035138B2 (en) * 2000-09-27 2006-04-25 Canon Kabushiki Kaisha Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions
US6714444B2 (en) * 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6888742B1 (en) * 2002-08-28 2005-05-03 Grandis, Inc. Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6838740B2 (en) * 2002-09-27 2005-01-04 Grandis, Inc. Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6958927B1 (en) * 2002-10-09 2005-10-25 Grandis Inc. Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
US7190611B2 (en) * 2003-01-07 2007-03-13 Grandis, Inc. Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
US6829161B2 (en) * 2003-01-10 2004-12-07 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6847547B2 (en) * 2003-02-28 2005-01-25 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6933155B2 (en) * 2003-05-21 2005-08-23 Grandis, Inc. Methods for providing a sub .15 micron magnetic memory structure
US6980469B2 (en) * 2003-08-19 2005-12-27 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US7245462B2 (en) * 2003-08-21 2007-07-17 Grandis, Inc. Magnetoresistive element having reduced spin transfer induced noise
US6985385B2 (en) * 2003-08-26 2006-01-10 Grandis, Inc. Magnetic memory element utilizing spin transfer switching and storing multiple bits
US7161829B2 (en) * 2003-09-19 2007-01-09 Grandis, Inc. Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
US20050136600A1 (en) * 2003-12-22 2005-06-23 Yiming Huai Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
US7110287B2 (en) * 2004-02-13 2006-09-19 Grandis, Inc. Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
US7242045B2 (en) * 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US6967863B2 (en) * 2004-02-25 2005-11-22 Grandis, Inc. Perpendicular magnetization magnetic element utilizing spin transfer
US6992359B2 (en) * 2004-02-26 2006-01-31 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
US7233039B2 (en) * 2004-04-21 2007-06-19 Grandis, Inc. Spin transfer magnetic elements with spin depolarization layers
US7057921B2 (en) * 2004-05-11 2006-06-06 Grandis, Inc. Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same
US7088609B2 (en) * 2004-05-11 2006-08-08 Grandis, Inc. Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
US7120048B2 (en) * 2004-06-21 2006-10-10 Honeywell International Inc. Nonvolatile memory vertical ring bit and write-read structure
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
US7369427B2 (en) * 2004-09-09 2008-05-06 Grandis, Inc. Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
US7126202B2 (en) * 2004-11-16 2006-10-24 Grandis, Inc. Spin scattering and heat assisted switching of a magnetic element
US7313013B2 (en) * 2004-11-18 2007-12-25 International Business Machines Corporation Spin-current switchable magnetic memory element and method of fabricating the memory element
US7241631B2 (en) * 2004-12-29 2007-07-10 Grandis, Inc. MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
JP4575181B2 (ja) * 2005-01-28 2010-11-04 株式会社東芝 スピン注入磁気ランダムアクセスメモリ
JP4877575B2 (ja) * 2005-05-19 2012-02-15 日本電気株式会社 磁気ランダムアクセスメモリ
JP4516483B2 (ja) 2005-06-07 2010-08-04 富士通セミコンダクター株式会社 半導体記憶装置及び情報処理システム
US7518835B2 (en) * 2005-07-01 2009-04-14 Grandis, Inc. Magnetic elements having a bias field and magnetic memory devices using the magnetic elements
US7230845B1 (en) * 2005-07-29 2007-06-12 Grandis, Inc. Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
US7489541B2 (en) * 2005-08-23 2009-02-10 Grandis, Inc. Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
US7973349B2 (en) * 2005-09-20 2011-07-05 Grandis Inc. Magnetic device having multilayered free ferromagnetic layer
US7430135B2 (en) * 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
US20070297220A1 (en) * 2006-06-22 2007-12-27 Masatoshi Yoshikawa Magnetoresistive element and magnetic memory
US7486551B1 (en) * 2007-04-03 2009-02-03 Grandis, Inc. Method and system for providing domain wall assisted switching of magnetic elements and magnetic memories using such magnetic elements
US7605437B2 (en) * 2007-04-18 2009-10-20 Everspin Technologies, Inc. Spin-transfer MRAM structure and methods
US7486552B2 (en) * 2007-05-21 2009-02-03 Grandis, Inc. Method and system for providing a spin transfer device with improved switching characteristics
US7982275B2 (en) * 2007-08-22 2011-07-19 Grandis Inc. Magnetic element having low saturation magnetization
US20090302403A1 (en) * 2008-06-05 2009-12-10 Nguyen Paul P Spin torque transfer magnetic memory cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028362A (ja) * 2006-06-22 2008-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197344A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 磁気抵抗効果素子及び磁気メモリ
JP2022522128A (ja) * 2019-03-06 2022-04-14 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁壁ベースの不揮発性、線形、かつ双方向性のシナプス重み素子
JP7488005B2 (ja) 2019-03-06 2024-05-21 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁壁ベースの不揮発性、線形、かつ双方向性のシナプス重み素子

Also Published As

Publication number Publication date
US7859892B2 (en) 2010-12-28
US8023317B2 (en) 2011-09-20
US20110298069A1 (en) 2011-12-08
KR20110102404A (ko) 2011-09-16
EP2374130B1 (en) 2013-09-18
CN102272845A (zh) 2011-12-07
US20110069535A1 (en) 2011-03-24
US8199565B2 (en) 2012-06-12
EP2374130A1 (en) 2011-10-12
WO2010065753A1 (en) 2010-06-10
US20100134923A1 (en) 2010-06-03

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