JP5142923B2 - 磁性発振素子、磁気センサ及び磁気記録再生装置 - Google Patents
磁性発振素子、磁気センサ及び磁気記録再生装置 Download PDFInfo
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- JP5142923B2 JP5142923B2 JP2008254351A JP2008254351A JP5142923B2 JP 5142923 B2 JP5142923 B2 JP 5142923B2 JP 2008254351 A JP2008254351 A JP 2008254351A JP 2008254351 A JP2008254351 A JP 2008254351A JP 5142923 B2 JP5142923 B2 JP 5142923B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1284—Spin resolved measurements; Influencing spins during measurements, e.g. in spintronics devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
- H01F10/3277—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets by use of artificial ferrimagnets [AFI] only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Description
第1の強磁性層と、
前記第1の強磁性層に積層された非磁性層と、
前記非磁性層に積層された第2の強磁性層と、
前記第1の強磁性層または前記第2の強磁性層のうち少なくとも一方の強磁性層の磁化の歳差運動を誘起する電流を前記第1の強磁性層、前記第2の強磁性層及び前記非磁性層の膜面に対して垂直に通電する為の一対の電極と、
前記磁化の歳差運動が誘起される前記強磁性層が一軸磁気異方性を有する面内磁化膜で形成され、前記面内磁化膜に作用する反磁場の効果による前記歳差運動の非線形周波数シフトと前記一軸磁気異方性の効果による前記歳差運動の非線形周波数シフトが互いに打ち消し合うように前記磁化の方向を制御する磁場を発生する磁場発生部と、
を具備することを特徴とする磁性発振素子が提供される。
上記した磁性発振素子と、
前記磁性発振素子に通電することにより、誘起される磁化の歳差運動に起因して、前記磁性発振素子の両端に発生する高周波発振電圧の振幅または発振周波数の外部磁場による変化を検出するモニターと
を具備することを特徴とする磁気センサが提供される。
上記した磁気センサを含む磁気ヘッドと、
磁気記録媒体と、
を具備することを特徴とする磁気記録再生装置が提供される。
実施例1では、磁性発振素子10を作製して、その発振特性を測定した結果について説明する。ガラス基板31上に、スパッタリング装置を用いて成膜を行い、上部電極33及び下部電極32は、フォトリソグラフィーとイオンミリングにより形成し、磁性発振素子10部は、電子線リソグラフィーとイオンミリングにより加工した。
Claims (4)
- 第1の強磁性層と、
前記第1の強磁性層に積層された非磁性層と、
前記非磁性層に積層された第2の強磁性層と、
前記第1の強磁性層または前記第2の強磁性層のうち少なくとも一方の強磁性層の磁化の歳差運動を誘起する電流を前記第1の強磁性層、前記第2の強磁性層及び前記非磁性層の膜面に対して垂直に通電する為の一対の電極と、
前記磁化の歳差運動が誘起される前記強磁性層が一軸磁気異方性を有する面内磁化膜で形成され、前記面内磁化膜に作用する反磁場の効果による前記歳差運動の非線形周波数シフトと前記一軸磁気異方性の効果による前記歳差運動の非線形周波数シフトが互いに打ち消し合うように前記磁化の方向を制御する磁場を発生する磁場発生部と、
を具備し、前記磁場発生部は、前記強磁性層の面内において前記一軸磁気異方性に対して45°より大きい方向に前記磁場を発生することを特徴とする磁性発振素子。 - 前記磁場発生部は、永久磁石または電流磁場発生配線であることを特徴とする請求項1に記載の磁性発振素子。
- 請求項1又は請求項2に記載の磁性発振素子と、
前記磁性発振素子に通電することにより、誘起される磁化の歳差運動に起因して、前記磁性発振素子両端に発生する高周波発振電圧の振幅または発振周波数の外部磁場による変化を検出する検出回路と
を具備することを特徴とする磁気センサ。 - 請求項3に記載の磁気センサを含む磁気ヘッドと、
磁気記録媒体と、
を具備することを特徴とする磁気記録再生装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008254351A JP5142923B2 (ja) | 2008-09-30 | 2008-09-30 | 磁性発振素子、磁気センサ及び磁気記録再生装置 |
US12/555,272 US8174798B2 (en) | 2008-09-30 | 2009-09-08 | Spin-torque oscillator, a magnetic sensor and a magnetic recording system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008254351A JP5142923B2 (ja) | 2008-09-30 | 2008-09-30 | 磁性発振素子、磁気センサ及び磁気記録再生装置 |
Publications (2)
Publication Number | Publication Date |
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JP2010087225A JP2010087225A (ja) | 2010-04-15 |
JP5142923B2 true JP5142923B2 (ja) | 2013-02-13 |
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JP2008254351A Expired - Fee Related JP5142923B2 (ja) | 2008-09-30 | 2008-09-30 | 磁性発振素子、磁気センサ及び磁気記録再生装置 |
Country Status (2)
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US (1) | US8174798B2 (ja) |
JP (1) | JP5142923B2 (ja) |
Families Citing this family (24)
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US8164861B2 (en) * | 2009-12-11 | 2012-04-24 | Hitachi Global Storage Technologies Netherlands B.V. | Spin torque oscillator sensor employing antiparallel coupled oscilation layers |
JP2012060033A (ja) * | 2010-09-10 | 2012-03-22 | Toshiba Corp | スピン波素子 |
JP5228015B2 (ja) * | 2010-09-14 | 2013-07-03 | 株式会社東芝 | スピン波装置 |
US8830734B2 (en) | 2010-11-19 | 2014-09-09 | Seagate Technology Llc | Using a nearby cell to provide field assisted switching in a magnetic memory array |
KR20120056019A (ko) * | 2010-11-24 | 2012-06-01 | 삼성전자주식회사 | 발진기와 그 제조방법 및 동작방법 |
US9222994B2 (en) * | 2011-09-19 | 2015-12-29 | Tdk Corporation | Perpendicular spin torque oscillator FMR frequency measurement method |
US8456967B1 (en) | 2011-10-12 | 2013-06-04 | Western Digital (Fremont), Llc | Systems and methods for providing a pole pedestal for microwave assisted magnetic recording |
US9030780B2 (en) * | 2012-08-08 | 2015-05-12 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for reading a non-volatile memory using a spin torque oscillator |
US8908330B1 (en) | 2012-12-21 | 2014-12-09 | Western Digital Technologies, Inc. | Spin torque oscillator for microwave assisted magnetic recording with optimal geometries |
US9355654B1 (en) | 2012-12-21 | 2016-05-31 | Western Digital Technologies, Inc. | Spin torque oscillator for microwave assisted magnetic recording with increased damping |
JP6182346B2 (ja) * | 2013-04-18 | 2017-08-16 | Tdk株式会社 | 発振器、整流器および送受信装置 |
US9030783B1 (en) * | 2014-02-06 | 2015-05-12 | HGST Netherlands B.V. | Phase detection of spin torque oscillator reader excited through parametric excitation |
US9001444B1 (en) | 2014-06-26 | 2015-04-07 | HGST Netherlands B.V. | Implementing spin torque oscillator power-on oscillation checker for microwave-assisted magnetic recording hard disk drives |
US8917465B1 (en) | 2014-06-26 | 2014-12-23 | HGST Netherlands B.V. | Implementing spin torque oscillator power-on oscillation checker using ramped STO bias differentiator in microwave-assisted magnetic recording (MAMR) hard disk drives |
US10366714B1 (en) | 2016-04-28 | 2019-07-30 | Western Digital Technologies, Inc. | Magnetic write head for providing spin-torque-assisted write field enhancement |
US10110165B2 (en) * | 2016-05-19 | 2018-10-23 | Seagate Technology Llc | Solid state microwave generator |
US10601368B2 (en) | 2016-05-19 | 2020-03-24 | Seagate Technology Llc | Solid state microwave generator |
US9858952B1 (en) * | 2016-06-30 | 2018-01-02 | Western Digital Technologies, Inc. | Microwave assisted magnetic recording head having spin torque oscillator frequency detection |
US10388305B1 (en) | 2016-12-30 | 2019-08-20 | Western Digital Technologies, Inc. | Apparatus and method for writing to magnetic media using an AC bias current to enhance the write field |
US10424323B1 (en) | 2016-12-30 | 2019-09-24 | Western Digital Technologies, Inc. | High-bandwidth STO bias architecture with integrated slider voltage potential control |
RU2690217C1 (ru) * | 2018-05-16 | 2019-05-31 | федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский университет "МЭИ" (ФГБОУ ВО "НИУ "МЭИ") | Спинтронное устройство генерирования сверхвысокочастотных колебаний |
US11011190B2 (en) | 2019-04-24 | 2021-05-18 | Western Digital Technologies, Inc. | Magnetic write head with write-field enhancement structure including a magnetic notch |
US10957346B2 (en) | 2019-05-03 | 2021-03-23 | Western Digital Technologies, Inc. | Magnetic recording devices and methods using a write-field-enhancement structure and bias current with offset pulses |
US11087784B2 (en) | 2019-05-03 | 2021-08-10 | Western Digital Technologies, Inc. | Data storage devices with integrated slider voltage potential control |
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JP3212566B2 (ja) * | 1999-01-27 | 2001-09-25 | アルプス電気株式会社 | 磁気抵抗効果型薄膜磁気素子を備えた薄膜磁気ヘッドおよびその製造方法 |
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JP4996187B2 (ja) * | 2006-09-25 | 2012-08-08 | 株式会社東芝 | 磁性発振素子 |
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US8351155B2 (en) * | 2009-08-17 | 2013-01-08 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording system with spin torque oscillator and control circuitry for fast switching of write pole magnetization |
US8164861B2 (en) * | 2009-12-11 | 2012-04-24 | Hitachi Global Storage Technologies Netherlands B.V. | Spin torque oscillator sensor employing antiparallel coupled oscilation layers |
JP4975836B2 (ja) * | 2010-02-19 | 2012-07-11 | 株式会社東芝 | 磁気記録ヘッド及びそれを用いた磁気記録再生装置 |
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- 2008-09-30 JP JP2008254351A patent/JP5142923B2/ja not_active Expired - Fee Related
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US20100079919A1 (en) | 2010-04-01 |
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