KR20110102404A - 듀얼 스핀 토크 기준층들을 갖는 자기 랜덤 액세스 메모리 - Google Patents

듀얼 스핀 토크 기준층들을 갖는 자기 랜덤 액세스 메모리 Download PDF

Info

Publication number
KR20110102404A
KR20110102404A KR1020117015470A KR20117015470A KR20110102404A KR 20110102404 A KR20110102404 A KR 20110102404A KR 1020117015470 A KR1020117015470 A KR 1020117015470A KR 20117015470 A KR20117015470 A KR 20117015470A KR 20110102404 A KR20110102404 A KR 20110102404A
Authority
KR
South Korea
Prior art keywords
magnetic layer
magnetic
pinned
layer
magnetization direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117015470A
Other languages
English (en)
Korean (ko)
Inventor
토마스 클린턴
마이크 시글러
Original Assignee
시게이트 테크놀로지 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시게이트 테크놀로지 엘엘씨 filed Critical 시게이트 테크놀로지 엘엘씨
Publication of KR20110102404A publication Critical patent/KR20110102404A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020117015470A 2008-12-03 2009-12-03 듀얼 스핀 토크 기준층들을 갖는 자기 랜덤 액세스 메모리 Ceased KR20110102404A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/327,184 US7859892B2 (en) 2008-12-03 2008-12-03 Magnetic random access memory with dual spin torque reference layers
US12/327,184 2008-12-03

Publications (1)

Publication Number Publication Date
KR20110102404A true KR20110102404A (ko) 2011-09-16

Family

ID=42126026

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117015470A Ceased KR20110102404A (ko) 2008-12-03 2009-12-03 듀얼 스핀 토크 기준층들을 갖는 자기 랜덤 액세스 메모리

Country Status (6)

Country Link
US (3) US7859892B2 (enExample)
EP (1) EP2374130B1 (enExample)
JP (1) JP2012510731A (enExample)
KR (1) KR20110102404A (enExample)
CN (1) CN102272845A (enExample)
WO (1) WO2010065753A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8144425B2 (en) * 2003-12-15 2012-03-27 Seagate Technology Llc Magnetic recording head with compact yoke
JP5142923B2 (ja) * 2008-09-30 2013-02-13 株式会社東芝 磁性発振素子、磁気センサ及び磁気記録再生装置
JP5644198B2 (ja) * 2010-06-15 2014-12-24 ソニー株式会社 記憶装置
JP4951095B2 (ja) 2010-06-30 2012-06-13 株式会社東芝 磁気記録ヘッド及び磁気記録装置
DE112012000271B4 (de) 2011-02-16 2022-01-05 International Business Machines Corporation Ferromagnetische Einheit, die hohe Domänenwandgeschwindigkeiten gewährleistet
JP5542856B2 (ja) * 2012-03-21 2014-07-09 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
US8941196B2 (en) * 2012-07-10 2015-01-27 New York University Precessional reversal in orthogonal spin transfer magnetic RAM devices
US8982613B2 (en) 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
CN106030840B (zh) * 2014-03-25 2019-03-01 英特尔公司 磁畴壁逻辑器件及互连
EP3304741A4 (en) * 2015-05-28 2019-05-01 INTEL Corporation EXCLUSIVE OR LOGICAL DEVICE WITH SPIN-ORBIT TORQUE EFFECT
CN107636850B (zh) 2015-06-26 2022-07-05 英特尔公司 低杂散场磁性存储器
US10832749B2 (en) 2015-06-26 2020-11-10 Intel Corporation Perpendicular magnetic memory with symmetric fixed layers
US9911483B1 (en) * 2017-03-21 2018-03-06 International Business Machines Corporation Thermally-assisted spin transfer torque memory with improved bit error rate performance
US10720570B2 (en) * 2017-06-12 2020-07-21 Western Digital Technologies, Inc. Magnetic sensor using spin hall effect
US10770649B1 (en) 2019-02-21 2020-09-08 International Business Machines Corporation Lattice matched tunnel barriers for perpendicularly magnetized Heusler alloys
US11386320B2 (en) * 2019-03-06 2022-07-12 International Business Machines Corporation Magnetic domain wall-based non-volatile, linear and bi-directional synaptic weight element
CN115443548A (zh) * 2020-07-30 2022-12-06 华为技术有限公司 一种磁性隧道结及存储单元
US11917835B2 (en) 2020-12-21 2024-02-27 International Business Machines Corporation Three-dimensional funnel-like spin transfer torque MRAM cell with a non-uniform thicknesses in each layer

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7035138B2 (en) * 2000-09-27 2006-04-25 Canon Kabushiki Kaisha Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions
US6714444B2 (en) * 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6888742B1 (en) * 2002-08-28 2005-05-03 Grandis, Inc. Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6838740B2 (en) * 2002-09-27 2005-01-04 Grandis, Inc. Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6958927B1 (en) * 2002-10-09 2005-10-25 Grandis Inc. Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
US7190611B2 (en) * 2003-01-07 2007-03-13 Grandis, Inc. Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
US6829161B2 (en) * 2003-01-10 2004-12-07 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6847547B2 (en) * 2003-02-28 2005-01-25 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6933155B2 (en) * 2003-05-21 2005-08-23 Grandis, Inc. Methods for providing a sub .15 micron magnetic memory structure
US6980469B2 (en) * 2003-08-19 2005-12-27 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US7245462B2 (en) * 2003-08-21 2007-07-17 Grandis, Inc. Magnetoresistive element having reduced spin transfer induced noise
US6985385B2 (en) * 2003-08-26 2006-01-10 Grandis, Inc. Magnetic memory element utilizing spin transfer switching and storing multiple bits
US7161829B2 (en) * 2003-09-19 2007-01-09 Grandis, Inc. Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
US20050136600A1 (en) * 2003-12-22 2005-06-23 Yiming Huai Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
US7110287B2 (en) * 2004-02-13 2006-09-19 Grandis, Inc. Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
US7242045B2 (en) * 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US6967863B2 (en) * 2004-02-25 2005-11-22 Grandis, Inc. Perpendicular magnetization magnetic element utilizing spin transfer
US6992359B2 (en) * 2004-02-26 2006-01-31 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
US7233039B2 (en) * 2004-04-21 2007-06-19 Grandis, Inc. Spin transfer magnetic elements with spin depolarization layers
US7057921B2 (en) * 2004-05-11 2006-06-06 Grandis, Inc. Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same
US7088609B2 (en) * 2004-05-11 2006-08-08 Grandis, Inc. Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
US7120048B2 (en) * 2004-06-21 2006-10-10 Honeywell International Inc. Nonvolatile memory vertical ring bit and write-read structure
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
US7369427B2 (en) * 2004-09-09 2008-05-06 Grandis, Inc. Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
US7126202B2 (en) * 2004-11-16 2006-10-24 Grandis, Inc. Spin scattering and heat assisted switching of a magnetic element
US7313013B2 (en) * 2004-11-18 2007-12-25 International Business Machines Corporation Spin-current switchable magnetic memory element and method of fabricating the memory element
US7241631B2 (en) * 2004-12-29 2007-07-10 Grandis, Inc. MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
JP4575181B2 (ja) * 2005-01-28 2010-11-04 株式会社東芝 スピン注入磁気ランダムアクセスメモリ
JP4877575B2 (ja) * 2005-05-19 2012-02-15 日本電気株式会社 磁気ランダムアクセスメモリ
JP4516483B2 (ja) 2005-06-07 2010-08-04 富士通セミコンダクター株式会社 半導体記憶装置及び情報処理システム
US7518835B2 (en) * 2005-07-01 2009-04-14 Grandis, Inc. Magnetic elements having a bias field and magnetic memory devices using the magnetic elements
US7230845B1 (en) * 2005-07-29 2007-06-12 Grandis, Inc. Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
US7489541B2 (en) * 2005-08-23 2009-02-10 Grandis, Inc. Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
US7973349B2 (en) * 2005-09-20 2011-07-05 Grandis Inc. Magnetic device having multilayered free ferromagnetic layer
US7430135B2 (en) * 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
US20070297220A1 (en) * 2006-06-22 2007-12-27 Masatoshi Yoshikawa Magnetoresistive element and magnetic memory
JP2008028362A (ja) * 2006-06-22 2008-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ
US7486551B1 (en) * 2007-04-03 2009-02-03 Grandis, Inc. Method and system for providing domain wall assisted switching of magnetic elements and magnetic memories using such magnetic elements
US7605437B2 (en) * 2007-04-18 2009-10-20 Everspin Technologies, Inc. Spin-transfer MRAM structure and methods
US7486552B2 (en) * 2007-05-21 2009-02-03 Grandis, Inc. Method and system for providing a spin transfer device with improved switching characteristics
US7982275B2 (en) * 2007-08-22 2011-07-19 Grandis Inc. Magnetic element having low saturation magnetization
US20090302403A1 (en) * 2008-06-05 2009-12-10 Nguyen Paul P Spin torque transfer magnetic memory cell

Also Published As

Publication number Publication date
JP2012510731A (ja) 2012-05-10
US7859892B2 (en) 2010-12-28
US8023317B2 (en) 2011-09-20
US20110298069A1 (en) 2011-12-08
EP2374130B1 (en) 2013-09-18
CN102272845A (zh) 2011-12-07
US20110069535A1 (en) 2011-03-24
US8199565B2 (en) 2012-06-12
EP2374130A1 (en) 2011-10-12
WO2010065753A1 (en) 2010-06-10
US20100134923A1 (en) 2010-06-03

Similar Documents

Publication Publication Date Title
US7859892B2 (en) Magnetic random access memory with dual spin torque reference layers
JP6717735B2 (ja) 改善された切り換え効率のためのスピン軌道トルクビット設計
JP4492780B2 (ja) 記憶機能を有する磁気スピン極性化および磁化回転装置および当該装置を用いた書き込み方法
CN101226769B (zh) 存储元件和存储器
JP5961785B2 (ja) スイッチングが改良されたハイブリッド磁気トンネル接合要素を提供するための方法およびシステム
EP2124228B1 (en) Magnetic random access memory with an elliptical junction
US8526224B2 (en) Compound cell spin-torque magnetic random access memory
JP2009239282A (ja) 多重レベル磁気記憶装置
CN103392245A (zh) 可写入的磁性元件
WO2013080436A1 (ja) 記憶素子、記憶装置
WO2014050379A1 (ja) 記憶素子、記憶装置、磁気ヘッド
CN103137853A (zh) 存储元件和存储设备
TWI732105B (zh) 磁性記憶體、半導體裝置、電子機器及磁性記憶體之讀出方法
CN101252144B (zh) 存储器件和存储器
WO2022264529A1 (ja) 記憶装置、メモリセルアレイ、メモリセルアレイの製造方法、磁気ヘッド及び電子機器
WO2013080437A1 (ja) 記憶素子、記憶装置
Daughton Magnetoresistive random access memories

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20110704

Patent event code: PA01051R01D

Comment text: International Patent Application

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20110728

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20121108

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20130808

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20121108

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I