KR20110102404A - 듀얼 스핀 토크 기준층들을 갖는 자기 랜덤 액세스 메모리 - Google Patents

듀얼 스핀 토크 기준층들을 갖는 자기 랜덤 액세스 메모리 Download PDF

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Publication number
KR20110102404A
KR20110102404A KR1020117015470A KR20117015470A KR20110102404A KR 20110102404 A KR20110102404 A KR 20110102404A KR 1020117015470 A KR1020117015470 A KR 1020117015470A KR 20117015470 A KR20117015470 A KR 20117015470A KR 20110102404 A KR20110102404 A KR 20110102404A
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KR
South Korea
Prior art keywords
magnetic layer
magnetic
pinned
layer
magnetization direction
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KR1020117015470A
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English (en)
Korean (ko)
Inventor
토마스 클린턴
마이크 시글러
Original Assignee
시게이트 테크놀로지 엘엘씨
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Publication of KR20110102404A publication Critical patent/KR20110102404A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020117015470A 2008-12-03 2009-12-03 듀얼 스핀 토크 기준층들을 갖는 자기 랜덤 액세스 메모리 Ceased KR20110102404A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/327,184 US7859892B2 (en) 2008-12-03 2008-12-03 Magnetic random access memory with dual spin torque reference layers
US12/327,184 2008-12-03

Publications (1)

Publication Number Publication Date
KR20110102404A true KR20110102404A (ko) 2011-09-16

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ID=42126026

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117015470A Ceased KR20110102404A (ko) 2008-12-03 2009-12-03 듀얼 스핀 토크 기준층들을 갖는 자기 랜덤 액세스 메모리

Country Status (6)

Country Link
US (3) US7859892B2 (enExample)
EP (1) EP2374130B1 (enExample)
JP (1) JP2012510731A (enExample)
KR (1) KR20110102404A (enExample)
CN (1) CN102272845A (enExample)
WO (1) WO2010065753A1 (enExample)

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JP5542856B2 (ja) * 2012-03-21 2014-07-09 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
US8941196B2 (en) * 2012-07-10 2015-01-27 New York University Precessional reversal in orthogonal spin transfer magnetic RAM devices
US8982613B2 (en) 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
EP3123537A4 (en) * 2014-03-25 2018-02-14 Intel Corporation Magnetic domain wall logic devices and interconnect
EP3304741A4 (en) * 2015-05-28 2019-05-01 INTEL Corporation EXCLUSIVE OR LOGICAL DEVICE WITH SPIN-ORBIT TORQUE EFFECT
KR102426415B1 (ko) * 2015-06-26 2022-07-29 인텔 코포레이션 대칭 고정 층을 갖는 수직 자기 메모리
WO2016209267A1 (en) 2015-06-26 2016-12-29 Intel Corporation Low stray field magnetic memory
US9911483B1 (en) * 2017-03-21 2018-03-06 International Business Machines Corporation Thermally-assisted spin transfer torque memory with improved bit error rate performance
US10720570B2 (en) * 2017-06-12 2020-07-21 Western Digital Technologies, Inc. Magnetic sensor using spin hall effect
US10770649B1 (en) 2019-02-21 2020-09-08 International Business Machines Corporation Lattice matched tunnel barriers for perpendicularly magnetized Heusler alloys
US11386320B2 (en) * 2019-03-06 2022-07-12 International Business Machines Corporation Magnetic domain wall-based non-volatile, linear and bi-directional synaptic weight element
CN115443548A (zh) * 2020-07-30 2022-12-06 华为技术有限公司 一种磁性隧道结及存储单元
US11917835B2 (en) 2020-12-21 2024-02-27 International Business Machines Corporation Three-dimensional funnel-like spin transfer torque MRAM cell with a non-uniform thicknesses in each layer

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US6888742B1 (en) * 2002-08-28 2005-05-03 Grandis, Inc. Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
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Also Published As

Publication number Publication date
US20110298069A1 (en) 2011-12-08
WO2010065753A1 (en) 2010-06-10
JP2012510731A (ja) 2012-05-10
EP2374130A1 (en) 2011-10-12
US20100134923A1 (en) 2010-06-03
EP2374130B1 (en) 2013-09-18
US8199565B2 (en) 2012-06-12
US7859892B2 (en) 2010-12-28
US20110069535A1 (en) 2011-03-24
US8023317B2 (en) 2011-09-20
CN102272845A (zh) 2011-12-07

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