JP2012533190A5 - - Google Patents

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Publication number
JP2012533190A5
JP2012533190A5 JP2012520673A JP2012520673A JP2012533190A5 JP 2012533190 A5 JP2012533190 A5 JP 2012533190A5 JP 2012520673 A JP2012520673 A JP 2012520673A JP 2012520673 A JP2012520673 A JP 2012520673A JP 2012533190 A5 JP2012533190 A5 JP 2012533190A5
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JP
Japan
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region
layer
pinned
heat assist
heat
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JP2012520673A
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Japanese (ja)
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JP2012533190A (ja
JP5730301B2 (ja
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Priority claimed from US12/501,902 external-priority patent/US7999337B2/en
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JP2012520673A 2009-07-13 2010-07-08 静磁場によりアシストされた抵抗性検知素子 Expired - Fee Related JP5730301B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/501,902 2009-07-13
US12/501,902 US7999337B2 (en) 2009-07-13 2009-07-13 Static magnetic field assisted resistive sense element
PCT/US2010/041303 WO2011008616A1 (en) 2009-07-13 2010-07-08 Static magnetic field assisted resistive sense element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013058395A Division JP5730933B2 (ja) 2009-07-13 2013-03-21 静磁場によりアシストされた抵抗性検知素子

Publications (3)

Publication Number Publication Date
JP2012533190A JP2012533190A (ja) 2012-12-20
JP2012533190A5 true JP2012533190A5 (enExample) 2013-05-09
JP5730301B2 JP5730301B2 (ja) 2015-06-10

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JP2012520673A Expired - Fee Related JP5730301B2 (ja) 2009-07-13 2010-07-08 静磁場によりアシストされた抵抗性検知素子
JP2013058395A Expired - Fee Related JP5730933B2 (ja) 2009-07-13 2013-03-21 静磁場によりアシストされた抵抗性検知素子

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JP2013058395A Expired - Fee Related JP5730933B2 (ja) 2009-07-13 2013-03-21 静磁場によりアシストされた抵抗性検知素子

Country Status (5)

Country Link
US (4) US7999337B2 (enExample)
JP (2) JP5730301B2 (enExample)
KR (1) KR101323784B1 (enExample)
CN (1) CN102473449A (enExample)
WO (1) WO2011008616A1 (enExample)

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KR20170116180A (ko) * 2009-09-17 2017-10-18 아이아이아이 홀딩스 3, 엘엘씨 자기저항소자 및 이를 이용한 비휘발성 반도체 기억장치
CN102226835A (zh) * 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片双轴磁场传感器及其制备方法
KR101929583B1 (ko) * 2012-06-13 2018-12-14 에스케이하이닉스 주식회사 비휘발성 자기 메모리 소자
US8901687B2 (en) 2012-11-27 2014-12-02 Industrial Technology Research Institute Magnetic device with a substrate, a sensing block and a repair layer
US20140355336A1 (en) * 2013-06-04 2014-12-04 Kabushiki Kaisha Toshiba Semiconductor memory device
US9741927B2 (en) 2014-04-10 2017-08-22 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having a gradient in magnetic ordering temperature
US9461094B2 (en) 2014-07-17 2016-10-04 Qualcomm Incorporated Switching film structure for magnetic random access memory (MRAM) cell
US9715915B2 (en) * 2014-10-30 2017-07-25 Samsung Electronics Co., Ltd. Magneto-resistive devices including a free layer having different magnetic properties during operations
KR102466342B1 (ko) 2015-06-11 2022-11-15 삼성전자주식회사 자기 메모리 소자
US9799386B1 (en) * 2016-08-30 2017-10-24 International Business Machines Corporation STT MRAM midpoint reference cell allowing full write
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DE10214159B4 (de) * 2002-03-28 2008-03-20 Qimonda Ag Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen
US6654278B1 (en) * 2002-07-31 2003-11-25 Motorola, Inc. Magnetoresistance random access memory
US6714444B2 (en) 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
JP2004165451A (ja) * 2002-11-13 2004-06-10 Sony Corp 磁気記憶素子及び磁気記憶素子の記録方法
US6933155B2 (en) * 2003-05-21 2005-08-23 Grandis, Inc. Methods for providing a sub .15 micron magnetic memory structure
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