KR101323784B1 - 정적 자계 보조 저항성 감지 소자 - Google Patents

정적 자계 보조 저항성 감지 소자 Download PDF

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KR101323784B1
KR101323784B1 KR1020127003806A KR20127003806A KR101323784B1 KR 101323784 B1 KR101323784 B1 KR 101323784B1 KR 1020127003806 A KR1020127003806 A KR 1020127003806A KR 20127003806 A KR20127003806 A KR 20127003806A KR 101323784 B1 KR101323784 B1 KR 101323784B1
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pinned
mtj
magnetic moment
zero
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KR20120046254A (ko
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쳉 유안카이
루 시아오후아
시 하이웬
마이클 탕
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시게이트 테크놀로지 엘엘씨
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020127003806A 2009-07-13 2010-07-08 정적 자계 보조 저항성 감지 소자 Active KR101323784B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/501,902 2009-07-13
US12/501,902 US7999337B2 (en) 2009-07-13 2009-07-13 Static magnetic field assisted resistive sense element
PCT/US2010/041303 WO2011008616A1 (en) 2009-07-13 2010-07-08 Static magnetic field assisted resistive sense element

Publications (2)

Publication Number Publication Date
KR20120046254A KR20120046254A (ko) 2012-05-09
KR101323784B1 true KR101323784B1 (ko) 2013-10-31

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Family Applications (1)

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KR1020127003806A Active KR101323784B1 (ko) 2009-07-13 2010-07-08 정적 자계 보조 저항성 감지 소자

Country Status (5)

Country Link
US (4) US7999337B2 (enExample)
JP (2) JP5730301B2 (enExample)
KR (1) KR101323784B1 (enExample)
CN (1) CN102473449A (enExample)
WO (1) WO2011008616A1 (enExample)

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KR20170116180A (ko) * 2009-09-17 2017-10-18 아이아이아이 홀딩스 3, 엘엘씨 자기저항소자 및 이를 이용한 비휘발성 반도체 기억장치
CN102226835A (zh) * 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片双轴磁场传感器及其制备方法
KR101929583B1 (ko) * 2012-06-13 2018-12-14 에스케이하이닉스 주식회사 비휘발성 자기 메모리 소자
US8901687B2 (en) 2012-11-27 2014-12-02 Industrial Technology Research Institute Magnetic device with a substrate, a sensing block and a repair layer
US20140355336A1 (en) * 2013-06-04 2014-12-04 Kabushiki Kaisha Toshiba Semiconductor memory device
US9741927B2 (en) 2014-04-10 2017-08-22 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having a gradient in magnetic ordering temperature
US9461094B2 (en) 2014-07-17 2016-10-04 Qualcomm Incorporated Switching film structure for magnetic random access memory (MRAM) cell
US9715915B2 (en) * 2014-10-30 2017-07-25 Samsung Electronics Co., Ltd. Magneto-resistive devices including a free layer having different magnetic properties during operations
KR102466342B1 (ko) 2015-06-11 2022-11-15 삼성전자주식회사 자기 메모리 소자
US9799386B1 (en) * 2016-08-30 2017-10-24 International Business Machines Corporation STT MRAM midpoint reference cell allowing full write
US9911483B1 (en) * 2017-03-21 2018-03-06 International Business Machines Corporation Thermally-assisted spin transfer torque memory with improved bit error rate performance
CN116018053B (zh) * 2022-12-06 2025-09-09 中国科学院上海微系统与信息技术研究所 一种热辅助型磁性器件、存算一体阵列以及运算方法

Citations (4)

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US20030143431A1 (en) 2002-01-25 2003-07-31 Naoya Hasegawa CPP magnetic sensing element in which pinned magnetic layers of upper and lower multilayer films are magnetized antiparallel to each other, method for making the same, and magnetic sensing device including the same
US20070165449A1 (en) 2003-10-31 2007-07-19 Agency For Science, Technology And Research Nano-contacted magnetic memory device
US20080291721A1 (en) 2007-05-21 2008-11-27 Grandis, Inc. Method and system for providing a spin transfer device with improved switching characteristics
WO2008154519A1 (en) 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled

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DE10214159B4 (de) * 2002-03-28 2008-03-20 Qimonda Ag Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen
US6654278B1 (en) * 2002-07-31 2003-11-25 Motorola, Inc. Magnetoresistance random access memory
US6714444B2 (en) 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
JP2004165451A (ja) * 2002-11-13 2004-06-10 Sony Corp 磁気記憶素子及び磁気記憶素子の記録方法
US6933155B2 (en) * 2003-05-21 2005-08-23 Grandis, Inc. Methods for providing a sub .15 micron magnetic memory structure
US7573737B2 (en) 2003-08-19 2009-08-11 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US6980469B2 (en) 2003-08-19 2005-12-27 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US7245462B2 (en) 2003-08-21 2007-07-17 Grandis, Inc. Magnetoresistive element having reduced spin transfer induced noise
KR101001742B1 (ko) * 2003-10-24 2010-12-15 삼성전자주식회사 자기 램 및 그 제조방법
US6819586B1 (en) 2003-10-24 2004-11-16 Hewlett-Packard Development Company, L.P. Thermally-assisted magnetic memory structures
KR100988086B1 (ko) * 2003-11-14 2010-10-18 삼성전자주식회사 자기 모멘트가 낮은 프리 자성막을 구비하는 자기터널접합셀 및 이를 포함하는 자기램
US6930369B2 (en) 2003-11-14 2005-08-16 Hewlett-Packard Development Company, L.P. Thin film device and a method of providing thermal assistance therein
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US7102920B2 (en) 2004-03-23 2006-09-05 Hewlett-Packard Development Company, L.P. Soft-reference three conductor magnetic memory storage device
US7372116B2 (en) 2004-06-16 2008-05-13 Hitachi Global Storage Technologies Netherlands B.V. Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
US7126202B2 (en) 2004-11-16 2006-10-24 Grandis, Inc. Spin scattering and heat assisted switching of a magnetic element
US7241631B2 (en) 2004-12-29 2007-07-10 Grandis, Inc. MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
US7180770B2 (en) 2005-03-24 2007-02-20 Hewlett-Packard Development Company, L.P. Series diode thermally assisted MRAM
US7230265B2 (en) * 2005-05-16 2007-06-12 International Business Machines Corporation Spin-polarization devices using rare earth-transition metal alloys
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JP2008028362A (ja) * 2006-06-22 2008-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ
US7573736B2 (en) 2007-05-22 2009-08-11 Taiwan Semiconductor Manufacturing Company Spin torque transfer MRAM device
JP5586473B2 (ja) * 2007-12-13 2014-09-10 クロッカス・テクノロジー・ソシエテ・アノニム 熱支援書き込み手順を備える磁気メモリ装置と方法
EP2224477B1 (en) * 2007-12-19 2017-05-31 III Holdings 3, LLC Magnetic memory element, method for driving the magnetic memory element, and nonvolatile storage device
US7804709B2 (en) 2008-07-18 2010-09-28 Seagate Technology Llc Diode assisted switching spin-transfer torque memory unit
WO2010021213A1 (ja) * 2008-08-18 2010-02-25 日本電気株式会社 磁気抵抗記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030143431A1 (en) 2002-01-25 2003-07-31 Naoya Hasegawa CPP magnetic sensing element in which pinned magnetic layers of upper and lower multilayer films are magnetized antiparallel to each other, method for making the same, and magnetic sensing device including the same
US20070165449A1 (en) 2003-10-31 2007-07-19 Agency For Science, Technology And Research Nano-contacted magnetic memory device
US20080291721A1 (en) 2007-05-21 2008-11-27 Grandis, Inc. Method and system for providing a spin transfer device with improved switching characteristics
WO2008154519A1 (en) 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled

Also Published As

Publication number Publication date
US20110149641A1 (en) 2011-06-23
US20110149642A1 (en) 2011-06-23
WO2011008616A1 (en) 2011-01-20
US8466524B2 (en) 2013-06-18
US8466525B2 (en) 2013-06-18
JP2012533190A (ja) 2012-12-20
US7999337B2 (en) 2011-08-16
JP5730301B2 (ja) 2015-06-10
CN102473449A (zh) 2012-05-23
JP5730933B2 (ja) 2015-06-10
US20110007430A1 (en) 2011-01-13
US8183654B2 (en) 2012-05-22
US20110228597A1 (en) 2011-09-22
JP2013153194A (ja) 2013-08-08
KR20120046254A (ko) 2012-05-09

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