CN102473449A - 静磁场辅助的阻性感测元件 - Google Patents

静磁场辅助的阻性感测元件 Download PDF

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Publication number
CN102473449A
CN102473449A CN2010800324015A CN201080032401A CN102473449A CN 102473449 A CN102473449 A CN 102473449A CN 2010800324015 A CN2010800324015 A CN 2010800324015A CN 201080032401 A CN201080032401 A CN 201080032401A CN 102473449 A CN102473449 A CN 102473449A
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CN
China
Prior art keywords
region
magnetic moment
mtj
pinned
hot auxiliary
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CN2010800324015A
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English (en)
Chinese (zh)
Inventor
Z·袁凯
L·晓华
X·海文
M·唐
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Seagate Technology LLC
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Seagate Technology LLC
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Publication of CN102473449A publication Critical patent/CN102473449A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN2010800324015A 2009-07-13 2010-07-08 静磁场辅助的阻性感测元件 Pending CN102473449A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/501,902 2009-07-13
US12/501,902 US7999337B2 (en) 2009-07-13 2009-07-13 Static magnetic field assisted resistive sense element
PCT/US2010/041303 WO2011008616A1 (en) 2009-07-13 2010-07-08 Static magnetic field assisted resistive sense element

Publications (1)

Publication Number Publication Date
CN102473449A true CN102473449A (zh) 2012-05-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800324015A Pending CN102473449A (zh) 2009-07-13 2010-07-08 静磁场辅助的阻性感测元件

Country Status (5)

Country Link
US (4) US7999337B2 (enExample)
JP (2) JP5730301B2 (enExample)
KR (1) KR101323784B1 (enExample)
CN (1) CN102473449A (enExample)
WO (1) WO2011008616A1 (enExample)

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CN116018053A (zh) * 2022-12-06 2023-04-25 中国科学院上海微系统与信息技术研究所 一种热辅助型磁性器件、存算一体阵列以及运算方法

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KR20170116180A (ko) * 2009-09-17 2017-10-18 아이아이아이 홀딩스 3, 엘엘씨 자기저항소자 및 이를 이용한 비휘발성 반도체 기억장치
CN102226835A (zh) * 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片双轴磁场传感器及其制备方法
KR101929583B1 (ko) * 2012-06-13 2018-12-14 에스케이하이닉스 주식회사 비휘발성 자기 메모리 소자
US8901687B2 (en) 2012-11-27 2014-12-02 Industrial Technology Research Institute Magnetic device with a substrate, a sensing block and a repair layer
US20140355336A1 (en) * 2013-06-04 2014-12-04 Kabushiki Kaisha Toshiba Semiconductor memory device
US9741927B2 (en) 2014-04-10 2017-08-22 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having a gradient in magnetic ordering temperature
US9461094B2 (en) 2014-07-17 2016-10-04 Qualcomm Incorporated Switching film structure for magnetic random access memory (MRAM) cell
US9715915B2 (en) * 2014-10-30 2017-07-25 Samsung Electronics Co., Ltd. Magneto-resistive devices including a free layer having different magnetic properties during operations
KR102466342B1 (ko) 2015-06-11 2022-11-15 삼성전자주식회사 자기 메모리 소자
US9799386B1 (en) * 2016-08-30 2017-10-24 International Business Machines Corporation STT MRAM midpoint reference cell allowing full write
US9911483B1 (en) * 2017-03-21 2018-03-06 International Business Machines Corporation Thermally-assisted spin transfer torque memory with improved bit error rate performance

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US20050146967A1 (en) * 2003-10-24 2005-07-07 Samsung Electronics Co., Ltd. Magnetic random access memory (MRAM) and method of manufacturing the same
US20050174834A1 (en) * 2003-11-14 2005-08-11 Samsung Electronics Co., Ltd. Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
CN1708810A (zh) * 2002-07-31 2005-12-14 飞思卡尔半导体公司 磁电阻随机存取存储器
TW200903486A (en) * 2007-06-15 2009-01-16 Grandis Inc Method and system for providing a spin transfer device with improved switching characteristics

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JP3793725B2 (ja) 2002-01-25 2006-07-05 アルプス電気株式会社 磁気検出素子及びその製造方法並びに前記磁気検出素子を用いた磁気検出装置
DE10214159B4 (de) * 2002-03-28 2008-03-20 Qimonda Ag Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen
US6714444B2 (en) 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
JP2004165451A (ja) * 2002-11-13 2004-06-10 Sony Corp 磁気記憶素子及び磁気記憶素子の記録方法
US6933155B2 (en) * 2003-05-21 2005-08-23 Grandis, Inc. Methods for providing a sub .15 micron magnetic memory structure
US6980469B2 (en) * 2003-08-19 2005-12-27 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US7573737B2 (en) * 2003-08-19 2009-08-11 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US7245462B2 (en) * 2003-08-21 2007-07-17 Grandis, Inc. Magnetoresistive element having reduced spin transfer induced noise
US6819586B1 (en) * 2003-10-24 2004-11-16 Hewlett-Packard Development Company, L.P. Thermally-assisted magnetic memory structures
WO2005043545A1 (en) * 2003-10-31 2005-05-12 Agency For Science, Technology And Research Nano-contacted magnetic memory device
US6930369B2 (en) * 2003-11-14 2005-08-16 Hewlett-Packard Development Company, L.P. Thin film device and a method of providing thermal assistance therein
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US7102920B2 (en) * 2004-03-23 2006-09-05 Hewlett-Packard Development Company, L.P. Soft-reference three conductor magnetic memory storage device
US7372116B2 (en) 2004-06-16 2008-05-13 Hitachi Global Storage Technologies Netherlands B.V. Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
US7126202B2 (en) * 2004-11-16 2006-10-24 Grandis, Inc. Spin scattering and heat assisted switching of a magnetic element
US7241631B2 (en) 2004-12-29 2007-07-10 Grandis, Inc. MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
US7180770B2 (en) 2005-03-24 2007-02-20 Hewlett-Packard Development Company, L.P. Series diode thermally assisted MRAM
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WO2008154519A1 (en) 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
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WO2009078202A1 (ja) * 2007-12-19 2009-06-25 Fuji Electric Holdings Co., Ltd. 磁気メモリー素子、その駆動方法及び不揮発性記憶装置
US7804709B2 (en) 2008-07-18 2010-09-28 Seagate Technology Llc Diode assisted switching spin-transfer torque memory unit
WO2010021213A1 (ja) * 2008-08-18 2010-02-25 日本電気株式会社 磁気抵抗記憶装置

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CN1708810A (zh) * 2002-07-31 2005-12-14 飞思卡尔半导体公司 磁电阻随机存取存储器
US20050146967A1 (en) * 2003-10-24 2005-07-07 Samsung Electronics Co., Ltd. Magnetic random access memory (MRAM) and method of manufacturing the same
US20050174834A1 (en) * 2003-11-14 2005-08-11 Samsung Electronics Co., Ltd. Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
TW200903486A (en) * 2007-06-15 2009-01-16 Grandis Inc Method and system for providing a spin transfer device with improved switching characteristics

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116018053A (zh) * 2022-12-06 2023-04-25 中国科学院上海微系统与信息技术研究所 一种热辅助型磁性器件、存算一体阵列以及运算方法
CN116018053B (zh) * 2022-12-06 2025-09-09 中国科学院上海微系统与信息技术研究所 一种热辅助型磁性器件、存算一体阵列以及运算方法

Also Published As

Publication number Publication date
WO2011008616A1 (en) 2011-01-20
KR20120046254A (ko) 2012-05-09
KR101323784B1 (ko) 2013-10-31
US20110149641A1 (en) 2011-06-23
JP2013153194A (ja) 2013-08-08
JP5730933B2 (ja) 2015-06-10
US20110149642A1 (en) 2011-06-23
US20110228597A1 (en) 2011-09-22
US8466525B2 (en) 2013-06-18
US20110007430A1 (en) 2011-01-13
JP5730301B2 (ja) 2015-06-10
JP2012533190A (ja) 2012-12-20
US8183654B2 (en) 2012-05-22
US7999337B2 (en) 2011-08-16
US8466524B2 (en) 2013-06-18

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Application publication date: 20120523