CN102473449A - 静磁场辅助的阻性感测元件 - Google Patents

静磁场辅助的阻性感测元件 Download PDF

Info

Publication number
CN102473449A
CN102473449A CN2010800324015A CN201080032401A CN102473449A CN 102473449 A CN102473449 A CN 102473449A CN 2010800324015 A CN2010800324015 A CN 2010800324015A CN 201080032401 A CN201080032401 A CN 201080032401A CN 102473449 A CN102473449 A CN 102473449A
Authority
CN
China
Prior art keywords
region
hot auxiliary
magnetic moment
mtj
pinned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800324015A
Other languages
English (en)
Chinese (zh)
Inventor
Z·袁凯
L·晓华
X·海文
M·唐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of CN102473449A publication Critical patent/CN102473449A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN2010800324015A 2009-07-13 2010-07-08 静磁场辅助的阻性感测元件 Pending CN102473449A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/501,902 2009-07-13
US12/501,902 US7999337B2 (en) 2009-07-13 2009-07-13 Static magnetic field assisted resistive sense element
PCT/US2010/041303 WO2011008616A1 (en) 2009-07-13 2010-07-08 Static magnetic field assisted resistive sense element

Publications (1)

Publication Number Publication Date
CN102473449A true CN102473449A (zh) 2012-05-23

Family

ID=42667978

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800324015A Pending CN102473449A (zh) 2009-07-13 2010-07-08 静磁场辅助的阻性感测元件

Country Status (5)

Country Link
US (4) US7999337B2 (enExample)
JP (2) JP5730301B2 (enExample)
KR (1) KR101323784B1 (enExample)
CN (1) CN102473449A (enExample)
WO (1) WO2011008616A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116018053A (zh) * 2022-12-06 2023-04-25 中国科学院上海微系统与信息技术研究所 一种热辅助型磁性器件、存算一体阵列以及运算方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170116180A (ko) * 2009-09-17 2017-10-18 아이아이아이 홀딩스 3, 엘엘씨 자기저항소자 및 이를 이용한 비휘발성 반도체 기억장치
CN102226835A (zh) * 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片双轴磁场传感器及其制备方法
KR101929583B1 (ko) * 2012-06-13 2018-12-14 에스케이하이닉스 주식회사 비휘발성 자기 메모리 소자
US8901687B2 (en) 2012-11-27 2014-12-02 Industrial Technology Research Institute Magnetic device with a substrate, a sensing block and a repair layer
US20140355336A1 (en) * 2013-06-04 2014-12-04 Kabushiki Kaisha Toshiba Semiconductor memory device
US9741927B2 (en) 2014-04-10 2017-08-22 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having a gradient in magnetic ordering temperature
US9461094B2 (en) 2014-07-17 2016-10-04 Qualcomm Incorporated Switching film structure for magnetic random access memory (MRAM) cell
US9715915B2 (en) * 2014-10-30 2017-07-25 Samsung Electronics Co., Ltd. Magneto-resistive devices including a free layer having different magnetic properties during operations
KR102466342B1 (ko) 2015-06-11 2022-11-15 삼성전자주식회사 자기 메모리 소자
US9799386B1 (en) * 2016-08-30 2017-10-24 International Business Machines Corporation STT MRAM midpoint reference cell allowing full write
US9911483B1 (en) * 2017-03-21 2018-03-06 International Business Machines Corporation Thermally-assisted spin transfer torque memory with improved bit error rate performance

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050146967A1 (en) * 2003-10-24 2005-07-07 Samsung Electronics Co., Ltd. Magnetic random access memory (MRAM) and method of manufacturing the same
US20050174834A1 (en) * 2003-11-14 2005-08-11 Samsung Electronics Co., Ltd. Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
CN1708810A (zh) * 2002-07-31 2005-12-14 飞思卡尔半导体公司 磁电阻随机存取存储器
TW200903486A (en) * 2007-06-15 2009-01-16 Grandis Inc Method and system for providing a spin transfer device with improved switching characteristics

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3793725B2 (ja) 2002-01-25 2006-07-05 アルプス電気株式会社 磁気検出素子及びその製造方法並びに前記磁気検出素子を用いた磁気検出装置
DE10214159B4 (de) * 2002-03-28 2008-03-20 Qimonda Ag Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen
US6714444B2 (en) 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
JP2004165451A (ja) * 2002-11-13 2004-06-10 Sony Corp 磁気記憶素子及び磁気記憶素子の記録方法
US6933155B2 (en) * 2003-05-21 2005-08-23 Grandis, Inc. Methods for providing a sub .15 micron magnetic memory structure
US7573737B2 (en) 2003-08-19 2009-08-11 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US6980469B2 (en) 2003-08-19 2005-12-27 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US7245462B2 (en) 2003-08-21 2007-07-17 Grandis, Inc. Magnetoresistive element having reduced spin transfer induced noise
US6819586B1 (en) 2003-10-24 2004-11-16 Hewlett-Packard Development Company, L.P. Thermally-assisted magnetic memory structures
WO2005043545A1 (en) * 2003-10-31 2005-05-12 Agency For Science, Technology And Research Nano-contacted magnetic memory device
US6930369B2 (en) 2003-11-14 2005-08-16 Hewlett-Packard Development Company, L.P. Thin film device and a method of providing thermal assistance therein
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US7102920B2 (en) 2004-03-23 2006-09-05 Hewlett-Packard Development Company, L.P. Soft-reference three conductor magnetic memory storage device
US7372116B2 (en) 2004-06-16 2008-05-13 Hitachi Global Storage Technologies Netherlands B.V. Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
US7126202B2 (en) 2004-11-16 2006-10-24 Grandis, Inc. Spin scattering and heat assisted switching of a magnetic element
US7241631B2 (en) 2004-12-29 2007-07-10 Grandis, Inc. MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
US7180770B2 (en) 2005-03-24 2007-02-20 Hewlett-Packard Development Company, L.P. Series diode thermally assisted MRAM
US7230265B2 (en) * 2005-05-16 2007-06-12 International Business Machines Corporation Spin-polarization devices using rare earth-transition metal alloys
US7515457B2 (en) 2006-02-24 2009-04-07 Grandis, Inc. Current driven memory cells having enhanced current and enhanced current symmetry
JP2008028362A (ja) * 2006-06-22 2008-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ
US7573736B2 (en) 2007-05-22 2009-08-11 Taiwan Semiconductor Manufacturing Company Spin torque transfer MRAM device
WO2008154519A1 (en) 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
JP5586473B2 (ja) * 2007-12-13 2014-09-10 クロッカス・テクノロジー・ソシエテ・アノニム 熱支援書き込み手順を備える磁気メモリ装置と方法
EP2224477B1 (en) * 2007-12-19 2017-05-31 III Holdings 3, LLC Magnetic memory element, method for driving the magnetic memory element, and nonvolatile storage device
US7804709B2 (en) 2008-07-18 2010-09-28 Seagate Technology Llc Diode assisted switching spin-transfer torque memory unit
WO2010021213A1 (ja) * 2008-08-18 2010-02-25 日本電気株式会社 磁気抵抗記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1708810A (zh) * 2002-07-31 2005-12-14 飞思卡尔半导体公司 磁电阻随机存取存储器
US20050146967A1 (en) * 2003-10-24 2005-07-07 Samsung Electronics Co., Ltd. Magnetic random access memory (MRAM) and method of manufacturing the same
US20050174834A1 (en) * 2003-11-14 2005-08-11 Samsung Electronics Co., Ltd. Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
TW200903486A (en) * 2007-06-15 2009-01-16 Grandis Inc Method and system for providing a spin transfer device with improved switching characteristics

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116018053A (zh) * 2022-12-06 2023-04-25 中国科学院上海微系统与信息技术研究所 一种热辅助型磁性器件、存算一体阵列以及运算方法
CN116018053B (zh) * 2022-12-06 2025-09-09 中国科学院上海微系统与信息技术研究所 一种热辅助型磁性器件、存算一体阵列以及运算方法

Also Published As

Publication number Publication date
US20110149641A1 (en) 2011-06-23
US20110149642A1 (en) 2011-06-23
WO2011008616A1 (en) 2011-01-20
US8466524B2 (en) 2013-06-18
US8466525B2 (en) 2013-06-18
KR101323784B1 (ko) 2013-10-31
JP2012533190A (ja) 2012-12-20
US7999337B2 (en) 2011-08-16
JP5730301B2 (ja) 2015-06-10
JP5730933B2 (ja) 2015-06-10
US20110007430A1 (en) 2011-01-13
US8183654B2 (en) 2012-05-22
US20110228597A1 (en) 2011-09-22
JP2013153194A (ja) 2013-08-08
KR20120046254A (ko) 2012-05-09

Similar Documents

Publication Publication Date Title
CN102473449A (zh) 静磁场辅助的阻性感测元件
US9230627B2 (en) High density low power GSHE-STT MRAM
Tehrani et al. Magnetoresistive random access memory using magnetic tunnel junctions
CN104050988B (zh) 磁存储器、提供该磁存储器和编程该磁存储器的方法
CN101925960B (zh) 具有单独读取和写入路径的磁性隧道结装置
KR102534007B1 (ko) 스핀 궤도 쓰기를 갖는 스핀 전달 토크 자기저항 랜덤 액세스 메모리를 위한 크로스 포인트 구조
CN105917411B (zh) 用于高密度低功率gshe-stt mram的多电平单元设计
EP1986196A1 (en) A spin-torque MRAM: spin-RAM, array
CN102203870A (zh) Stt-mram中的字线电压控制
CN101297371A (zh) 具有改进的读写容限的电流驱动切换磁性存储单元及采用该单元的磁性存储器
US8164940B2 (en) Read/write structures for a three dimensional memory
US8139397B2 (en) Spatial correlation of reference cells in resistive memory array
KR20100094974A (ko) 자기 메모리 소자, 그 구동 방법 및 불휘발성 기억장치
JP5137405B2 (ja) 磁気メモリ素子及び磁気メモリ装置
KR20100135315A (ko) 자기 메모리 셀 및 자기 랜덤 액세스 메모리
Bi et al. Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM)
US7821822B2 (en) Read/write elements for a three-dimensional magnetic memory
KR20120003007A (ko) 상보적 프로그램가능 기록층을 갖는 저항성 감지 메모리

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120523