JP2012519963A5 - - Google Patents
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- JP2012519963A5 JP2012519963A5 JP2011553108A JP2011553108A JP2012519963A5 JP 2012519963 A5 JP2012519963 A5 JP 2012519963A5 JP 2011553108 A JP2011553108 A JP 2011553108A JP 2011553108 A JP2011553108 A JP 2011553108A JP 2012519963 A5 JP2012519963 A5 JP 2012519963A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- fixed reference
- reference layer
- memory cell
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002885 antiferromagnetic material Substances 0.000 claims 15
- 230000005291 magnetic effect Effects 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 11
- 230000004888 barrier function Effects 0.000 claims 7
- 230000005415 magnetization Effects 0.000 claims 6
- 230000005290 antiferromagnetic effect Effects 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 230000005294 ferromagnetic effect Effects 0.000 claims 2
- 238000003491 array Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/398,214 US9165625B2 (en) | 2008-10-30 | 2009-03-05 | ST-RAM cells with perpendicular anisotropy |
| US12/398,214 | 2009-03-05 | ||
| PCT/US2010/026210 WO2010102107A1 (en) | 2009-03-05 | 2010-03-04 | St-ram cells with perpendicular anisotropy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012519963A JP2012519963A (ja) | 2012-08-30 |
| JP2012519963A5 true JP2012519963A5 (enExample) | 2013-05-02 |
Family
ID=42198916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011553108A Pending JP2012519963A (ja) | 2009-03-05 | 2010-03-04 | 垂直異方性を有するst−ramセル |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9165625B2 (enExample) |
| EP (1) | EP2404297A1 (enExample) |
| JP (1) | JP2012519963A (enExample) |
| KR (1) | KR20110139717A (enExample) |
| CN (1) | CN102396031A (enExample) |
| WO (1) | WO2010102107A1 (enExample) |
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| US9236560B1 (en) * | 2014-12-08 | 2016-01-12 | Western Digital (Fremont), Llc | Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy |
| US10439131B2 (en) | 2015-01-15 | 2019-10-08 | Micron Technology, Inc. | Methods of forming semiconductor devices including tunnel barrier materials |
| US9337415B1 (en) * | 2015-03-20 | 2016-05-10 | HGST Netherlands B.V. | Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy |
| US9941469B2 (en) | 2015-10-06 | 2018-04-10 | International Business Machines Corporation | Double spin filter tunnel junction |
| US9780299B2 (en) | 2015-11-23 | 2017-10-03 | Headway Technologies, Inc. | Multilayer structure for reducing film roughness in magnetic devices |
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| US9972352B2 (en) * | 2009-08-19 | 2018-05-15 | Seagate Technology Llc | Antiferromagnetic coupling layers |
-
2009
- 2009-03-05 US US12/398,214 patent/US9165625B2/en not_active Expired - Fee Related
-
2010
- 2010-03-04 WO PCT/US2010/026210 patent/WO2010102107A1/en not_active Ceased
- 2010-03-04 CN CN2010800178377A patent/CN102396031A/zh active Pending
- 2010-03-04 EP EP10708466A patent/EP2404297A1/en not_active Withdrawn
- 2010-03-04 JP JP2011553108A patent/JP2012519963A/ja active Pending
- 2010-03-04 KR KR1020117023433A patent/KR20110139717A/ko not_active Ceased
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