JP2013191687A - 光半導体装置の製造方法及び光半導体装置 - Google Patents

光半導体装置の製造方法及び光半導体装置 Download PDF

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JP2013191687A
JP2013191687A JP2012056166A JP2012056166A JP2013191687A JP 2013191687 A JP2013191687 A JP 2013191687A JP 2012056166 A JP2012056166 A JP 2012056166A JP 2012056166 A JP2012056166 A JP 2012056166A JP 2013191687 A JP2013191687 A JP 2013191687A
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optical semiconductor
semiconductor device
group
organopolysiloxane
formula
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Japanese (ja)
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JP2013191687A5 (https=
Inventor
Minoru Suezaki
穣 末▲崎▼
Yasunari Kusaka
康成 日下
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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Priority to JP2012056166A priority Critical patent/JP2013191687A/ja
Priority to PCT/JP2013/056124 priority patent/WO2013137079A1/ja
Priority to TW102108902A priority patent/TW201347241A/zh
Publication of JP2013191687A publication Critical patent/JP2013191687A/ja
Publication of JP2013191687A5 publication Critical patent/JP2013191687A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • C08K5/5455—Silicon-containing compounds containing nitrogen containing at least one group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
JP2012056166A 2012-03-13 2012-03-13 光半導体装置の製造方法及び光半導体装置 Pending JP2013191687A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012056166A JP2013191687A (ja) 2012-03-13 2012-03-13 光半導体装置の製造方法及び光半導体装置
PCT/JP2013/056124 WO2013137079A1 (ja) 2012-03-13 2013-03-06 光半導体装置の製造方法及び光半導体装置
TW102108902A TW201347241A (zh) 2012-03-13 2013-03-13 光半導體裝置之製造方法及光半導體裝置

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Application Number Priority Date Filing Date Title
JP2012056166A JP2013191687A (ja) 2012-03-13 2012-03-13 光半導体装置の製造方法及び光半導体装置

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JP2013191687A true JP2013191687A (ja) 2013-09-26
JP2013191687A5 JP2013191687A5 (https=) 2014-03-13

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JP (1) JP2013191687A (https=)
TW (1) TW201347241A (https=)
WO (1) WO2013137079A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103694709A (zh) * 2013-12-09 2014-04-02 华南理工大学 加成型液体硅橡胶用耐漏电起痕剂及其制备方法和应用
JP2017132853A (ja) * 2016-01-26 2017-08-03 信越化学工業株式会社 含フッ素エラストマーの基材への接着方法
WO2020090209A1 (ja) * 2018-10-29 2020-05-07 信越化学工業株式会社 シリコーンエマルジョン組成物
WO2024176683A1 (ja) * 2023-02-20 2024-08-29 信越化学工業株式会社 シリコーンエマルション組成物

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7037046B2 (ja) 2018-01-31 2022-03-16 日亜化学工業株式会社 発光装置及びその製造方法
JP6777105B2 (ja) 2018-01-31 2020-10-28 日亜化学工業株式会社 発光装置の製造方法
JP6905486B2 (ja) * 2018-03-13 2021-07-21 信越化学工業株式会社 付加硬化型シリコーン組成物、シリコーン硬化物、及び半導体装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184759A (ja) * 2000-12-14 2002-06-28 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
JP2003338512A (ja) * 1994-01-13 2003-11-28 Seiko Epson Corp 半導体装置の製造方法及びその装置、並びに液晶ディスプレイ及び液晶モジュールの製造方法
JP2006332673A (ja) * 2005-05-26 2006-12-07 Samsung Electro Mech Co Ltd 発光ダイオードパッケージの製造方法
JP2007142297A (ja) * 2005-11-22 2007-06-07 Matsushita Electric Ind Co Ltd パッケージ部品の製造方法
WO2010150880A1 (ja) * 2009-06-26 2010-12-29 株式会社朝日ラバー 白色反射材及びその製造方法
WO2011125463A1 (ja) * 2010-03-31 2011-10-13 積水化学工業株式会社 光半導体装置用封止剤及び光半導体装置
JP2012007136A (ja) * 2010-05-21 2012-01-12 Sekisui Chem Co Ltd 光半導体装置用封止剤及びそれを用いた光半導体装置
JP2012021131A (ja) * 2010-06-18 2012-02-02 Mitsubishi Chemicals Corp 半導体発光デバイス部材用２液型硬化性ポリオルガノシロキサン組成物、該組成物を硬化させてなるポリオルガノシロキサン硬化物及びその製造方法
JP2012031401A (ja) * 2010-07-02 2012-02-16 Hitachi Chem Co Ltd 樹脂組成物、ｂステージシート、樹脂付金属箔、金属基板及びｌｅｄ基板

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338512A (ja) * 1994-01-13 2003-11-28 Seiko Epson Corp 半導体装置の製造方法及びその装置、並びに液晶ディスプレイ及び液晶モジュールの製造方法
JP2002184759A (ja) * 2000-12-14 2002-06-28 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
JP2006332673A (ja) * 2005-05-26 2006-12-07 Samsung Electro Mech Co Ltd 発光ダイオードパッケージの製造方法
JP2007142297A (ja) * 2005-11-22 2007-06-07 Matsushita Electric Ind Co Ltd パッケージ部品の製造方法
WO2010150880A1 (ja) * 2009-06-26 2010-12-29 株式会社朝日ラバー 白色反射材及びその製造方法
WO2011125463A1 (ja) * 2010-03-31 2011-10-13 積水化学工業株式会社 光半導体装置用封止剤及び光半導体装置
JP2012007136A (ja) * 2010-05-21 2012-01-12 Sekisui Chem Co Ltd 光半導体装置用封止剤及びそれを用いた光半導体装置
JP2012021131A (ja) * 2010-06-18 2012-02-02 Mitsubishi Chemicals Corp 半導体発光デバイス部材用２液型硬化性ポリオルガノシロキサン組成物、該組成物を硬化させてなるポリオルガノシロキサン硬化物及びその製造方法
JP2012031401A (ja) * 2010-07-02 2012-02-16 Hitachi Chem Co Ltd 樹脂組成物、ｂステージシート、樹脂付金属箔、金属基板及びｌｅｄ基板

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103694709A (zh) * 2013-12-09 2014-04-02 华南理工大学 加成型液体硅橡胶用耐漏电起痕剂及其制备方法和应用
CN103694709B (zh) * 2013-12-09 2016-04-13 华南理工大学 加成型液体硅橡胶用耐漏电起痕剂及其制备方法和应用
JP2017132853A (ja) * 2016-01-26 2017-08-03 信越化学工業株式会社 含フッ素エラストマーの基材への接着方法
WO2020090209A1 (ja) * 2018-10-29 2020-05-07 信越化学工業株式会社 シリコーンエマルジョン組成物
US12173155B2 (en) 2018-10-29 2024-12-24 Shin-Etsu Chemical Co., Ltd. Silicone emulsion composition
WO2024176683A1 (ja) * 2023-02-20 2024-08-29 信越化学工業株式会社 シリコーンエマルション組成物
JP2024118254A (ja) * 2023-02-20 2024-08-30 信越化学工業株式会社 シリコーンエマルション組成物

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TW201347241A (zh) 2013-11-16

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