TW201347241A - 光半導體裝置之製造方法及光半導體裝置 - Google Patents

光半導體裝置之製造方法及光半導體裝置 Download PDF

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Publication number
TW201347241A
TW201347241A TW102108902A TW102108902A TW201347241A TW 201347241 A TW201347241 A TW 201347241A TW 102108902 A TW102108902 A TW 102108902A TW 102108902 A TW102108902 A TW 102108902A TW 201347241 A TW201347241 A TW 201347241A
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TW
Taiwan
Prior art keywords
optical semiconductor
semiconductor device
group
above formula
organopolyoxane
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TW102108902A
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English (en)
Chinese (zh)
Inventor
末崎穰
日下康成
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積水化學工業股份有限公司
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Publication of TW201347241A publication Critical patent/TW201347241A/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • C08K5/5455—Silicon-containing compounds containing nitrogen containing at least one group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
TW102108902A 2012-03-13 2013-03-13 光半導體裝置之製造方法及光半導體裝置 TW201347241A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012056166A JP2013191687A (ja) 2012-03-13 2012-03-13 光半導体装置の製造方法及び光半導体装置

Publications (1)

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TW201347241A true TW201347241A (zh) 2013-11-16

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TW102108902A TW201347241A (zh) 2012-03-13 2013-03-13 光半導體裝置之製造方法及光半導體裝置

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JP (1) JP2013191687A (https=)
TW (1) TW201347241A (https=)
WO (1) WO2013137079A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103694709B (zh) * 2013-12-09 2016-04-13 华南理工大学 加成型液体硅橡胶用耐漏电起痕剂及其制备方法和应用
JP6512120B2 (ja) * 2016-01-26 2019-05-15 信越化学工業株式会社 含フッ素エラストマーの基材への接着方法
JP7037046B2 (ja) 2018-01-31 2022-03-16 日亜化学工業株式会社 発光装置及びその製造方法
JP6777105B2 (ja) 2018-01-31 2020-10-28 日亜化学工業株式会社 発光装置の製造方法
JP6905486B2 (ja) * 2018-03-13 2021-07-21 信越化学工業株式会社 付加硬化型シリコーン組成物、シリコーン硬化物、及び半導体装置
JP7074642B2 (ja) 2018-10-29 2022-05-24 信越化学工業株式会社 シリコーンエマルジョン組成物
JP2024118254A (ja) * 2023-02-20 2024-08-30 信越化学工業株式会社 シリコーンエマルション組成物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3557682B2 (ja) * 1994-01-13 2004-08-25 セイコーエプソン株式会社 半導体装置の製造方法及びその装置、並びに液晶ディスプレイの製造方法
JP3835983B2 (ja) * 2000-12-14 2006-10-18 松下電器産業株式会社 プラズマ処理装置およびプラズマ処理方法
KR100665178B1 (ko) * 2005-05-26 2007-01-09 삼성전기주식회사 발광다이오드 패키지 제조방법
JP4823656B2 (ja) * 2005-11-22 2011-11-24 パナソニック株式会社 パッケージ部品の製造方法
KR20120123242A (ko) * 2009-06-26 2012-11-08 가부시키가이샤 아사히 러버 백색 반사재 및 그 제조방법
EP2554601A4 (en) * 2010-03-31 2013-10-09 Sekisui Chemical Co Ltd SEALANT FOR OPTICAL SEMICONDUCTORS AND OPTICAL SEMICONDUCTOR ELEMENT
JP2012007136A (ja) * 2010-05-21 2012-01-12 Sekisui Chem Co Ltd 光半導体装置用封止剤及びそれを用いた光半導体装置
JP2012021131A (ja) * 2010-06-18 2012-02-02 Mitsubishi Chemicals Corp 半導体発光デバイス部材用２液型硬化性ポリオルガノシロキサン組成物、該組成物を硬化させてなるポリオルガノシロキサン硬化物及びその製造方法
JP5830974B2 (ja) * 2010-07-02 2015-12-09 日立化成株式会社 樹脂組成物、ｂステージシート、樹脂付金属箔、金属基板及びｌｅｄ基板

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WO2013137079A1 (ja) 2013-09-19
JP2013191687A (ja) 2013-09-26

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