JP2013098519A5 - - Google Patents

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Publication number
JP2013098519A5
JP2013098519A5 JP2011243266A JP2011243266A JP2013098519A5 JP 2013098519 A5 JP2013098519 A5 JP 2013098519A5 JP 2011243266 A JP2011243266 A JP 2011243266A JP 2011243266 A JP2011243266 A JP 2011243266A JP 2013098519 A5 JP2013098519 A5 JP 2013098519A5
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JP
Japan
Prior art keywords
layer
semiconductor device
tasin
tan
resistance element
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Application number
JP2011243266A
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English (en)
Japanese (ja)
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JP5824330B2 (ja
JP2013098519A (ja
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Priority to JP2011243266A priority Critical patent/JP5824330B2/ja
Priority claimed from JP2011243266A external-priority patent/JP5824330B2/ja
Priority to US13/670,138 priority patent/US8829649B2/en
Publication of JP2013098519A publication Critical patent/JP2013098519A/ja
Priority to US14/458,976 priority patent/US20140357047A1/en
Publication of JP2013098519A5 publication Critical patent/JP2013098519A5/ja
Application granted granted Critical
Publication of JP5824330B2 publication Critical patent/JP5824330B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011243266A 2011-11-07 2011-11-07 半導体装置及び半導体装置の製造方法 Expired - Fee Related JP5824330B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011243266A JP5824330B2 (ja) 2011-11-07 2011-11-07 半導体装置及び半導体装置の製造方法
US13/670,138 US8829649B2 (en) 2011-11-07 2012-11-06 Semiconductor device having a resistive element including a TaSiN layer
US14/458,976 US20140357047A1 (en) 2011-11-07 2014-08-13 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011243266A JP5824330B2 (ja) 2011-11-07 2011-11-07 半導体装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013098519A JP2013098519A (ja) 2013-05-20
JP2013098519A5 true JP2013098519A5 (enExample) 2014-09-18
JP5824330B2 JP5824330B2 (ja) 2015-11-25

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ID=48620127

Family Applications (1)

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JP2011243266A Expired - Fee Related JP5824330B2 (ja) 2011-11-07 2011-11-07 半導体装置及び半導体装置の製造方法

Country Status (2)

Country Link
US (2) US8829649B2 (enExample)
JP (1) JP5824330B2 (enExample)

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US10026422B1 (en) * 2016-05-31 2018-07-17 Seagate Technology Llc Write pole with low wall angle

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