JP2013045629A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2013045629A JP2013045629A JP2011182642A JP2011182642A JP2013045629A JP 2013045629 A JP2013045629 A JP 2013045629A JP 2011182642 A JP2011182642 A JP 2011182642A JP 2011182642 A JP2011182642 A JP 2011182642A JP 2013045629 A JP2013045629 A JP 2013045629A
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- JP
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- Prior art keywords
- light
- layer
- wiring
- emitting device
- substrate
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 104
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- 238000007789 sealing Methods 0.000 claims description 51
- 150000002894 organic compounds Chemical class 0.000 claims description 34
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052721 tungsten Inorganic materials 0.000 claims description 14
- 239000010937 tungsten Substances 0.000 claims description 14
- 238000002844 melting Methods 0.000 abstract description 11
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
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- 229910052808 lithium carbonate Inorganic materials 0.000 description 3
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 3
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
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- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 3
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- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
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- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 150000001341 alkaline earth metal compounds Chemical class 0.000 description 2
- 150000001491 aromatic compounds Chemical class 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- KZPXREABEBSAQM-UHFFFAOYSA-N cyclopenta-1,3-diene;nickel(2+) Chemical compound [Ni+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KZPXREABEBSAQM-UHFFFAOYSA-N 0.000 description 2
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- 238000001514 detection method Methods 0.000 description 2
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- 230000001678 irradiating effect Effects 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
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- JIIYLLUYRFRKMG-UHFFFAOYSA-N tetrathianaphthacene Chemical compound C1=CC=CC2=C3SSC(C4=CC=CC=C44)=C3C3=C4SSC3=C21 JIIYLLUYRFRKMG-UHFFFAOYSA-N 0.000 description 2
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- 210000003462 vein Anatomy 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
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- 229910052792 caesium Inorganic materials 0.000 description 1
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- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
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- BHMABKBIKLSYGX-UHFFFAOYSA-N cyclopenta-1,3-diene 5-methylcyclopenta-1,3-diene nickel(2+) Chemical compound [Ni++].c1cc[cH-]c1.C[c-]1cccc1 BHMABKBIKLSYGX-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 238000012905 input function Methods 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- ZPPSOOVFTBGHBI-UHFFFAOYSA-N lead(2+);oxido(oxo)borane Chemical compound [Pb+2].[O-]B=O.[O-]B=O ZPPSOOVFTBGHBI-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- PPNAOCWZXJOHFK-UHFFFAOYSA-N manganese(2+);oxygen(2-) Chemical class [O-2].[Mn+2] PPNAOCWZXJOHFK-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
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Abstract
【解決手段】発光デバイスが形成された第1の基板と、第2の基板とがガラスフリットを用いて封止された発光装置において、ガラスフリットを溶融、固化して形成された封止材と重なる領域に用いる配線材料には、発光装置に用いる基板の材料と線熱膨張係数の近い導電性材料を用いればよい。より具体的には、基板材料の線熱膨張係数との差が、0℃から500℃の範囲において、5ppm以下の線熱膨張係数を有する導電性材料を配線材料として用いる。
【選択図】図1
Description
本実施の形態では、本発明の一態様の発光装置の構成例について、図1乃至図3を用いて説明する。
図1(A)は、本実施の形態で例示する発光装置100の上面概略図である。また、図1(B)は、図1(A)に示す切断線A−A’における断面概略図である。
ここで、配線105と封止材107の間には、封止材107と接する酸化物層を設けることにより、これらの密着性を向上させることができる。
ところで、封止材107にかかる応力に起因するクラックの発生を抑制するためには、少なくとも封止材107と重なる領域の配線105に、上述の導電性材料を用いればよく、その他の領域にはより低抵抗な配線を設けても良い。以下では、配線105と、配線105よりも低抵抗な低抵抗配線115を適用する場合の構成例について、図2を用いて説明する。
ここで、配線105とは別に、封止材107が形成される領域に、上述の配線105に用いる材料からなる緩衝層を設けることにより、クラックの発生を抑制すると共にレーザ光の照射を単一の条件で行うことが可能となる。以下では、このような緩衝層を設ける場合について、図3を用いて例示する。
本実施の形態では、発光装置に適用する発光デバイスとして薄膜トランジスタと有機EL素子とを組み合わせた画像表示デバイスを用いた表示装置の構成例について、図4及び図5を用いて説明する。
本実施の形態では、発光装置に適用する発光デバイスとして、有機EL素子を有する光源を用いた照明装置の一例について、図6を用いて説明する。
本実施の形態では、本発明の一態様に適用できるEL層の一例について、図7を用いて説明する。
本実施の形態では、本発明の一態様の発光装置が適用された電子機器や照明装置の例について、図8を用いて説明する。
101 第1の基板
103 発光デバイス
105 配線
105a 配線
105b 配線
107 封止材
109 酸化物層
111 第2の基板
113 封止領域
115 低抵抗配線
117 接続部
119 絶縁層
121 緩衝層
200 表示装置
201 画素部
203 駆動回路部
205 FPC
213 トランジスタ
214 トランジスタ
215 トランジスタ
216 トランジスタ
219 絶縁層
221 発光素子
223 画素電極
225 EL層
227 共通電極
229 絶縁層
231 絶縁層
233 カラーフィルタ
235 ブラックマトリクス
237 オーバーコート
239 接続体
241 絶縁層
300 照明装置
303 下部電極
305 EL層
307 上部電極
309a 接続電極
309b 接続電極
311 発光素子
313 絶縁層
315 絶縁層
403 第1の電極
405 EL層
407 第2の電極
701 正孔注入層
702 正孔輸送層
703 発光性の有機化合物を含む層
704 電子輸送層
705 電子注入層
706 電子注入バッファー層
707 電子リレー層
708 複合材料層
800 第1のEL層
801 第2のEL層
803 電荷発生層
7100 テレビジョン装置
7101 筐体
7103 表示部
7105 スタンド
7107 表示部
7109 操作キー
7110 リモコン操作機
7201 本体
7202 筐体
7203 表示部
7204 キーボード
7205 外部接続ポート
7206 ポインティングデバイス
7301 筐体
7302 筐体
7303 連結部
7304 表示部
7305 表示部
7306 スピーカ部
7307 記録媒体挿入部
7308 LEDランプ
7309 操作キー
7310 接続端子
7311 センサ
7312 マイクロフォン
7400 携帯電話機
7401 筐体
7402 表示部
7403 操作ボタン
7404 外部接続ポート
7405 スピーカ
7406 マイク
7500 照明装置
7501 筐体
7503 発光装置
9630 筐体
9631 表示部
9631a 表示部
9631b 表示部
9632a 領域
9632b 領域
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9637 操作キー
9638 コンバータ
9639 キーボード表示切り替えボタン
9033 留め具
9034 表示モード切り替えスイッチ
9035 電源スイッチ
9036 省電力モード切り替えスイッチ
9038 操作スイッチ
Claims (7)
- 第1の基板と、前記第1の基板と対向する第2の基板と、ガラスを含む封止材と、を有し、
前記第1の基板は、発光デバイスと、前記発光デバイスと電気的に接続された配線と、を備え、
前記発光デバイスは、前記第1の基板、前記第2の基板、及び前記封止材で囲まれた封止領域内に設けられ、
前記配線は、前記封止領域外に延在し、且つ一部が前記封止材と重畳し、
前記配線を構成する導電性材料は、当該導電性材料の線熱膨張係数と前記第1の基板の材料の線熱膨張係数との差が、0℃から500℃の温度範囲において5ppm/K以下である、発光装置。 - 第1の基板と、前記第1の基板と対向する第2の基板と、ガラスを含む封止材と、を有し、
前記第1の基板は、発光デバイスと、前記発光デバイスと電気的に接続された配線と、を備え、
前記発光デバイスは、前記第1の基板、前記第2の基板、及び前記封止材で囲まれた封止領域内に設けられ、
前記配線は、前記封止領域外に延在し、且つ一部が前記封止材と重畳し、
前記配線を構成する導電性材料は、当該導電性材料の線熱膨張係数と前記第1の基板の材料の線熱膨張係数との差が、0℃から500℃の温度範囲において2ppm/K以下である、発光装置。 - 前記導電性材料はタングステンである、請求項1または請求項2に記載の発光装置。
- 前記配線と、前記封止材の間に、前記封止材と接する酸化物層を有する、請求項1又は請求項3のいずれか一に記載の発光装置。
- 前記封止材と重畳し、且つ前記導電性材料で構成される緩衝層を有する、請求項1乃至請求項4のいずれか一に記載の発光装置。
- 前記発光デバイスは、一対の電極間に設けられた発光性の有機化合物を含む層を有する、請求項1乃至請求項5のいずれか一に記載の発光装置。
- 前記発光デバイスは、一対の電極間に設けられた発光性の有機化合物を含む層と、トランジスタを有する、請求項1乃至請求項5のいずれか一に記載の発光装置。
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TW101129383A TWI570980B (zh) | 2011-08-24 | 2012-08-14 | 發光裝置 |
US13/588,605 US9633871B2 (en) | 2011-08-24 | 2012-08-17 | Light-emitting device |
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TW201322519A (zh) | 2013-06-01 |
US9633871B2 (en) | 2017-04-25 |
TWI570980B (zh) | 2017-02-11 |
JP5816029B2 (ja) | 2015-11-17 |
KR20130023099A (ko) | 2013-03-07 |
KR101928718B1 (ko) | 2018-12-13 |
US20130049062A1 (en) | 2013-02-28 |
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