JP2013038419A - プラズマ誘発損傷を減少させる方法 - Google Patents
プラズマ誘発損傷を減少させる方法 Download PDFInfo
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- 230000003247 decreasing effect Effects 0.000 claims abstract 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 12
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- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims description 5
- 230000003467 diminishing effect Effects 0.000 claims description 4
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- 230000035945 sensitivity Effects 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
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- 230000002411 adverse Effects 0.000 description 1
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Abstract
【解決手段】基板216をチャンバ210内に配置し、一つ以上のプロセスガスをチャンバ210内に流入させ、プラズマ源電力を第1電力レベルで加えることにより、一つ以上の該プロセスガスからプラズマを生成させ、基板216上に膜を堆積させ、該プラズマ源電力を堆積後に該第1電力レベル以下に逓減させる。
【選択図】図2
Description
[概要]
本発明は、基板上のプラズマ誘発損傷を減少させるプラズマ処理の方法を提供する。一般に、1つ以上の異なる作用がプラズマ誘発損傷の原因となることがある。例えば、デバイス損傷は、プラズマ源電力の突然の変化又は急激な変化から生じる電界の勾配が大きいことにより起こるものであり、プラズマ処理中に基板上に蓄積した電荷に起因することもある。本発明の実施例によれば、プラズマ誘発損傷は、プラズマ処理後の基板の環境の漸次変化を与える堆積後ステップの異なる組合わせ、例えば、プロセスガスフローを変えることによってプラズマ源電力の漸次停止又は表面電荷の漸次消散によって減少する。
図2は、本発明の実施例を行うのに適した化学気相成長(CVD)チャンバ210の断面略図である。そのチャンバ210の一例は、CENTURA(登録商標)プラットホームと共に又はPRODUCERTMシステムに(デュアルチャンバと共に)用いられるDxZTMであり、いずれもカリフォルニア州サンタクララのApplied Materials, Inc.より入手できる。膜堆積も堆積した膜のプラズマ処理もDxZ CVDチャンバ内で行われ得る。
説明のために、本発明の実施例をプラズマ酸化物堆積プロセスについて述べる。実施例においては、酸化物堆積のための前駆物質としてテトラエトキシシラン(TEOS)を用いる。他の前駆物質、例えば、シラン、オルガノシラン(メチルシラン、ジメチルシラン又はトリメチルシラン等)又はテトラメチルシクロテトラシロキサン(TMCTS)も、酸化物堆積のための、酸素含有ガス、例えば、亜酸化窒素(N2O)、酸素(O2)又はオゾン(O3)との種々の反応において使用することができる。本発明が、一般的には、デバイス製造の種々の段階で絶縁層、導電層又は半導体層を含む他の材料の堆積といった他の多くのプラズマプロセスに応用できることは更に理解されよう。
Claims (33)
- プラズマ処理方法であって:
(a)基板をチャンバ内に配置するステップと;
(b)一つ以上のプロセスガスを該チャンバ内に流入させるステップと;
(c)プラズマ源電力を第1電力レベルで加えることにより一つ以上の該プロセスガスからプラズマを生成するステップと;
(d)該基板上に材料層を堆積させるステップと;
(e)該プラズマ源電力を該第1電力レベル以下に逓減するステップと、
を含む、前記方法。 - 更に
(f)該プラズマ源電力をゼロに下げるステップ、
を含んでいる、請求項1記載の方法。 - 該プラズマ源電力が、ステップ(e)において、ある時間間隔の間、中間電力レベルで維持されている、請求項1記載の方法。
- 該中間電力レベルが該第1電力レベルの約1/2に等しい、請求項3記載の方法。
- 該中間電力レベルが該第1電力レベルの約1/2と約1/4の間である、請求項3記載の方法。
- 該中間電力レベルがプラズマの生成を維持するのに十分に高いレベルである、請求項3記載の方法。
- 該プラズマ源電力を逓減させる該ステップが、該プラズマ源電力を1つ以上の中間電力レベルまで下げるステップを含み、1つ以上の該中間電力レベルのそれぞれがある時間間隔の間維持されている、請求項1記載の方法。
- 1つ以上の該中間電力レベルのそれぞれの該時間間隔が約0.1〜約30秒である、請求項7記載の方法。
- 該プラズマ源電力を逓減させる該ステップが、該プラズマ源電力を該第1電力レベルから連続方式で低下させるステップを含んでいる、請求項1記載の方法。
- 該プラズマ源電力を逓減させる該ステップが、一つ以上の該プロセスガスから少なくとも一つのガスフローを停止させるステップと同時に行われる、請求項1記載の方法。
- 少なくとも一つの該ガスフローが、堆積される該材料用の前駆ガスを含んでいる、請求項10記載の方法。
- 堆積した該材料が酸化物である、請求項11記載の方法。
- 該前駆ガスがテトラエトキシシラン及びテトラメチルシクロテトラシロキサンの群より選ばれる、請求項12記載の方法。
- 一つ以上の該プロセスガスが酸素と不活性ガスを更に含んでいる、請求項13記載の方法。
- 該プラズマ源電力を逓減させる該ステップが、一つ以上の該プロセスガスから少なくとも一つのガスフローを停止させるステップと連続して行われる、請求項1記載の方法。
- 少なくとも一つの該ガスフローが、堆積される該材料用の前駆ガスを含んでいる、請求項15記載の方法。
- 堆積した該材料が酸化物である、請求項16記載の方法。
- 該前駆ガスがテトラエトキシシランとテトラメチルシクロテトラシロキサンの群より選ばれる、請求項17記載の方法。
- 一つ以上の該プロセスガスが酸素と不活性ガスを更に含んでいる、請求項18記載の方法。
- 酸化物堆積方法であって
:(a)基板をチャンバ内に配置するステップと;
(b)該チャンバ内に一つ以上のプロセスガスを供給するステップと;
(c)プラズマ源電力を第1電力レベルで加えることにより一つ以上の該プロセスガスからプラズマを生成するステップと;
(d)該基板を該プラズマに曝露することにより該基板上に酸化物層を堆積させるステップと;
(e)該プラズマ源電力を該第1電力レベル以下に逓減するステップと;
(f)該プラズマ源電力をゼロに下げるステップと、を含む、前記方法。 - 該プラズマ源電力が、ステップ(e)において、約0.1〜約30秒の時間間隔の間、中間電力レベルで維持されている、請求項20記載の方法。
- 該中間電力レベルが該第1電力レベルの約1/2以下である、請求項20記載の方法。
- 該中間電力レベルがプラズマの生成を維持するのに十分に高いレベルである、請求項20記載の方法。
- 該プラズマ源電力を逓減する該ステップが、該第1電力レベルより低いプラズマ源電力を1つ以上の中間電力レベルまで低下させるステップを含み、1つ以上の該中間電力レベルの各々が時間間隔の間維持されている、請求項20記載の方法。
- 1つ以上の該中間電力レベルのそれぞれの該時間間隔が約0.1〜約30秒である、請求項24記載の方法。
- 該プラズマ源電力を逓減する該ステップが、該プラズマ源電力を該第1電力レベルから連続方式で低下させるステップを含む、請求項20記載の方法。
- 該プラズマ源電力を逓減する該ステップが、一つ以上の該プロセスガスから少なくとも一つのガスフローを停止させるステップと同時に行われる、請求項20記載の方法。
- 該プラズマ源電力を逓減する該ステップが、一つ以上の該プロセスガスから少なくとも一つのガスフローを停止させるステップと連続して行われる、請求項20記載の方法。
- 一つ以上の該プロセスガスがテトラエトキシシラン及びテトラメチルシクロテトラシロキサンの群より選ばれたガスを含んでいる、請求項20記載の方法。
- 一つ以上の該プロセスガスが酸素含有ガスと不活性ガスを更に含んでいる、請求項29記載の方法。
- 酸化物堆積方法であって:
(a)基板をチャンバ内に配置するステップと;
(b)テトラエトキシシランと、酸素と、ヘリウムとを含むプロセスガス混合気を該チャンバ内に流入させるステップと;
(c)高周波(RF)信号を第1電力レベルで加えることにより該プロセスガス混合気から第1プラズマを生成するステップと;
(d)該基板を該第1プラズマに曝露することにより該基板上に酸化物層を堆積させるステップと;
(e)該RF信号を該第1電力レベル以下に逓減するステップと;
(f)該RF信号をゼロに下げるステップと、を含む、前記方法。 - 該RF信号を逓減するステップが、該RF信号を1つ以上の中間電力レベルまで低下させるステップを含み、1つ以上の該中間電力レベルのそれぞれが約0.1〜約30秒の時間間隔の間維持されている、請求項31記載の方法。
- 該RF信号を逓減するステップが、該RF信号を連続方式で低下させるステップを含んでいる、請求項31記載の方法。
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US20070286965A1 (en) * | 2006-06-08 | 2007-12-13 | Martin Jay Seamons | Methods for the reduction and elimination of particulate contamination with cvd of amorphous carbon |
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US7259111B2 (en) * | 2005-01-19 | 2007-08-21 | Applied Materials, Inc. | Interface engineering to improve adhesion between low k stacks |
US7189658B2 (en) * | 2005-05-04 | 2007-03-13 | Applied Materials, Inc. | Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile |
US7273823B2 (en) * | 2005-06-03 | 2007-09-25 | Applied Materials, Inc. | Situ oxide cap layer development |
JP4678688B2 (ja) * | 2006-02-27 | 2011-04-27 | 次世代半導体材料技術研究組合 | プラズマ処理終了方法 |
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US7951695B2 (en) * | 2008-05-22 | 2011-05-31 | Freescale Semiconductor, Inc. | Method for reducing plasma discharge damage during processing |
US8815329B2 (en) * | 2008-12-05 | 2014-08-26 | Advanced Energy Industries, Inc. | Delivered energy compensation during plasma processing |
KR101049971B1 (ko) * | 2010-04-08 | 2011-07-15 | 강원대학교산학협력단 | 살균 및 세정능을 갖춘 대기압 플라즈마 표면처리장치 |
US8329575B2 (en) * | 2010-12-22 | 2012-12-11 | Applied Materials, Inc. | Fabrication of through-silicon vias on silicon wafers |
US20140049162A1 (en) * | 2012-08-15 | 2014-02-20 | George Thomas | Defect reduction in plasma processing |
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JP5501413B2 (ja) | 2014-05-21 |
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TW497368B (en) | 2002-08-01 |
KR100885350B1 (ko) | 2009-02-26 |
EP1191569A3 (en) | 2005-02-09 |
KR20020024788A (ko) | 2002-04-01 |
JP2002176047A (ja) | 2002-06-21 |
US6521302B1 (en) | 2003-02-18 |
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