JP2013009313A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
Abstract
【解決手段】論理回路は、オフ電流が小さい第1のトランジスタと、ゲートが電気的に接続された第2のトランジスタと、を有し、第2のトランジスタのゲートのノードには第1のトランジスタを介して電荷が供給される。ノードに対して、第1及び第2の容量を介して電荷を供給する。電荷の状態に応じて、第2のトランジスタのオン、オフが制御される。第1のトランジスタは、チャネル形成領域に酸化物半導体を有する。
【選択図】図1
Description
本実施の形態では、論理回路の基本構成について説明する。図1には、第1の容量(101)、第2の容量(102)、オフ電流が小さい第1のトランジスタ(OSFET、104)、第2のトランジスタ(FET、105)、を備えた論理回路を示す。
本実施の形態では、実施の形態1で示した第2のトランジスタの極性をP型とした論理回路の基本構成について説明する。図3には、第1の容量(101)、第2の容量(102)、オフ電流が小さい第1のトランジスタ(OSFET、104)、第2のトランジスタ(FET、205)、を備えた論理回路を示し、第2のトランジスタはP型である。
本実施の形態では、実施の形態1で示した回路と、実施の形態2で示した回路とを組み合わせた論理回路について説明する。
本実施の形態では、論理積(AND)と論理和(OR)と実行させるため、新たな素子を追加した論理回路について説明する。
本実施の形態では、上記実施の形態に示す論理回路において、オフ電流が小さいことが要求されるトランジスタ(第1のトランジスタ、第3のトランジスタ、第4のトランジスタなど)に適用可能な電界効果トランジスタについて説明する。チャネル形成領域に、酸化物半導体層を含む電界効果型トランジスタである。
絶縁層606bによって、導電層601_bと、導電層605b_bとが接触することを防ぐことができる。
本実施の形態では、本発明の一態様の論理回路を備えたCPU(演算処理装置)の例について説明する。
本実施の形態では、上記実施の形態における論理回路を備えた電子機器の例について説明する。
102 第2の容量
104 第1のトランジスタ
105 第2のトランジスタ
205 第2のトランジスタ
311 第3のトランジスタ
312 第4のトランジスタ
313 インバータ
Claims (6)
- 第1の容量と、
第2の容量と、
第1のトランジスタと、
第2のトランジスタと、を有し、
前記第1の容量の一方の電極は、前記第2のトランジスタのゲートと電気的に接続され、
前記第2の容量の一方の電極は、前記第2のトランジスタのゲートと電気的に接続され、
前記第2の容量の一方の電極は、前記第1のトランジスタのソース及びドレインの一方と電気的に接続され、
前記第1の容量の他方の電極は、端子Aと電気的に接続され、
前記第2の容量の他方の電極は、端子Bと電気的に接続され、
前記第1のトランジスタを介して入力される信号に応じた電荷が、前記第2のトランジスタのゲートに保持され、
前記保持された電荷と、前記端子Aに入力される信号、及び前記端子Bに入力される信号とによって、前記第2のトランジスタのオン又はオフが制御される
ことを特徴とする半導体装置。 - 請求項1において、
前記第1のトランジスタは、チャネル形成領域に酸化物半導体を有することを特徴とする半導体装置。 - 第1の容量と、
第2の容量と、
第1のトランジスタと、
第2のトランジスタと、
第3のトランジスタと、
第4のトランジスタと、
インバータと、を有し、
前記第1の容量の一方の電極は、前記第2のトランジスタのゲートと電気的に接続され、
前記第2の容量の一方の電極は、前記第2のトランジスタのゲートと電気的に接続され、
前記第2の容量の一方の電極は、前記第1のトランジスタのソース及びドレインの一方と電気的に接続され、
前記第3のトランジスタのソース及びドレインの一方は、前記第2のトランジスタのソース及びドレインの一方と電気的に接続され、
前記第3のトランジスタのソース及びドレインの他方は、前記第4のトランジスタのソース及びドレインの一方と電気的に接続され、
前記インバータの入力は、前記第3のトランジスタのソース及びドレインの他方、及び前記第4のトランジスタのソース及びドレインの一方と電気的に接続され、
前記第1の容量の他方の電極は、端子Aと電気的に接続され、
前記第2の容量の他方の電極は、端子Bと電気的に接続され、
前記第1のトランジスタを介して入力される信号に応じた電荷が、前記第2のトランジスタのゲートに保持され、
前記保持された電荷と、前記端子Aに入力される信号、及び前記端子Bに入力される信号とによって、前記第2のトランジスタのオン又はオフが制御され、
前記第3のトランジスタのゲートに第1の信号が入力され、
前記第4のトランジスタのゲートに第2の信号が入力され、
前記電荷が第1の条件のとき、前記インバータから論理積が出力され、
前記電荷が第2の条件のとき、前記インバータから論理和が出力される
ことを特徴とする半導体装置。 - 請求項3において、
前記第1のトランジスタ、前記第3のトランジスタ、及び前記第4のトランジスタは、チャネル形成領域に酸化物半導体を有することを特徴とする半導体装置。 - 請求項2又は請求項4において、
前記酸化物半導体は、In−Sn−Zn系酸化物を有することを特徴とする半導体装置。 - 請求項2又は請求項4において、
前記酸化物半導体は、In−Ga−Zn系酸化物を有することを特徴とする半導体装置。
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KR101979573B1 (ko) | 2019-05-17 |
US20120293242A1 (en) | 2012-11-22 |
KR20120130063A (ko) | 2012-11-28 |
US8542034B2 (en) | 2013-09-24 |
TWI529911B (zh) | 2016-04-11 |
JP5820336B2 (ja) | 2015-11-24 |
TW201310614A (zh) | 2013-03-01 |
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