JP2012523711A5 - - Google Patents
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- Publication number
- JP2012523711A5 JP2012523711A5 JP2012504904A JP2012504904A JP2012523711A5 JP 2012523711 A5 JP2012523711 A5 JP 2012523711A5 JP 2012504904 A JP2012504904 A JP 2012504904A JP 2012504904 A JP2012504904 A JP 2012504904A JP 2012523711 A5 JP2012523711 A5 JP 2012523711A5
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- layer
- electrode
- hafnium oxide
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000449 hafnium oxide Inorganic materials 0.000 description 13
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16853409P | 2009-04-10 | 2009-04-10 | |
| US61/168,534 | 2009-04-10 | ||
| US12/608,934 | 2009-10-29 | ||
| US12/608,934 US8183553B2 (en) | 2009-04-10 | 2009-10-29 | Resistive switching memory element including doped silicon electrode |
| US12/610,236 | 2009-10-30 | ||
| US12/610,236 US8975613B1 (en) | 2007-05-09 | 2009-10-30 | Resistive-switching memory elements having improved switching characteristics |
| US12/705,474 | 2010-02-12 | ||
| US12/705,474 US8343813B2 (en) | 2009-04-10 | 2010-02-12 | Resistive-switching memory elements having improved switching characteristics |
| PCT/US2010/030619 WO2010118380A2 (en) | 2009-04-10 | 2010-04-09 | Resistive-switching memory elements having improved switching characteristics |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012523711A JP2012523711A (ja) | 2012-10-04 |
| JP2012523711A5 true JP2012523711A5 (https=) | 2015-03-26 |
| JP5716012B2 JP5716012B2 (ja) | 2015-05-13 |
Family
ID=42936898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012504904A Expired - Fee Related JP5716012B2 (ja) | 2009-04-10 | 2010-04-09 | スイッチング特性を改善した抵抗スイッチングメモリ素子 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5716012B2 (https=) |
| KR (1) | KR20120006502A (https=) |
| WO (1) | WO2010118380A2 (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8737111B2 (en) | 2010-06-18 | 2014-05-27 | Sandisk 3D Llc | Memory cell with resistance-switching layers |
| US8724369B2 (en) | 2010-06-18 | 2014-05-13 | Sandisk 3D Llc | Composition of memory cell with resistance-switching layers |
| US8520425B2 (en) | 2010-06-18 | 2013-08-27 | Sandisk 3D Llc | Resistive random access memory with low current operation |
| JP2013004655A (ja) * | 2011-06-15 | 2013-01-07 | Sharp Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US8546275B2 (en) * | 2011-09-19 | 2013-10-01 | Intermolecular, Inc. | Atomic layer deposition of hafnium and zirconium oxides for memory applications |
| JP2013122985A (ja) * | 2011-12-12 | 2013-06-20 | Toshiba Corp | 半導体記憶装置 |
| JP5881742B2 (ja) * | 2012-01-07 | 2016-03-09 | 株式会社東芝 | タングステン合金、およびそれを用いたタングステン合金部品、放電ランプ、送信管並びにマグネトロン |
| US8581224B2 (en) * | 2012-01-20 | 2013-11-12 | Micron Technology, Inc. | Memory cells |
| US8878152B2 (en) * | 2012-02-29 | 2014-11-04 | Intermolecular, Inc. | Nonvolatile resistive memory element with an integrated oxygen isolation structure |
| EP2695966B1 (en) | 2012-08-06 | 2018-10-03 | IMEC vzw | ALD method |
| KR101956794B1 (ko) * | 2012-09-20 | 2019-03-13 | 에스케이하이닉스 주식회사 | 가변 저항 메모리 장치 및 그 제조 방법 |
| KR101977271B1 (ko) * | 2013-04-05 | 2019-05-10 | 에스케이하이닉스 주식회사 | 반도체 장치의 제조 방법 |
| CN103441214B (zh) * | 2013-08-02 | 2015-10-21 | 浙江大学 | 一种阻变存储器的制备方法 |
| JP6222690B2 (ja) * | 2013-08-05 | 2017-11-01 | マイクロンメモリジャパン株式会社 | 抵抗変化素子 |
| FR3019376B1 (fr) | 2014-03-26 | 2016-04-01 | Commissariat Energie Atomique | Dispositif de memoire vive resistive |
| CN107210361B (zh) * | 2014-12-09 | 2019-08-16 | 塞姆特里克斯内存有限公司 | 具有掺杂的缓冲区的过渡金属氧化物电阻开关式器件 |
| KR102410289B1 (ko) | 2014-12-18 | 2022-06-17 | 인텔 코포레이션 | 국소화된 필라멘트 채널을 포함하는 저항성 메모리 셀, 그것을 포함하는 디바이스, 및 그것의 제조 방법 |
| US10516109B2 (en) | 2014-12-24 | 2019-12-24 | Intel Corporation | Resistive memory cells and precursors thereof, methods of making the same, and devices including the same |
| KR102395193B1 (ko) * | 2015-10-27 | 2022-05-06 | 삼성전자주식회사 | 메모리 소자 및 그 제조 방법 |
| US9978942B2 (en) * | 2016-09-20 | 2018-05-22 | Arm Ltd. | Correlated electron switch structures and applications |
| JP2019057544A (ja) | 2017-09-19 | 2019-04-11 | 東芝メモリ株式会社 | 記憶素子 |
| KR102345845B1 (ko) * | 2018-12-17 | 2021-12-31 | 세종대학교산학협력단 | 세륨 산화물막을 활성층으로 포함하는 저항 변화 메모리 소자 |
| CN112002801B (zh) * | 2020-07-20 | 2021-09-07 | 厦门半导体工业技术研发有限公司 | 半导体器件和半导体器件的制造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100621914B1 (ko) * | 2004-08-13 | 2006-09-14 | 한국화학연구원 | 원자층 침착법으로 하프늄 산화물 박막을 제조하는 방법 |
| KR100636796B1 (ko) * | 2005-08-12 | 2006-10-20 | 한양대학교 산학협력단 | 반도체 소자 및 그 제조방법 |
| KR100959755B1 (ko) * | 2006-02-28 | 2010-05-25 | 동국대학교 산학협력단 | 저항 변화 메모리 장치용 가변 저항 산화막의 제조방법 |
| KR101206034B1 (ko) * | 2006-05-19 | 2012-11-28 | 삼성전자주식회사 | 산소결핍 금속산화물을 이용한 비휘발성 메모리 소자 및 그제조방법 |
| JP5501966B2 (ja) * | 2007-07-25 | 2014-05-28 | インターモレキュラー， インコーポレイテッド | 多状態の不揮発性メモリ素子 |
| KR100983175B1 (ko) * | 2008-07-03 | 2010-09-20 | 광주과학기술원 | 산화물막과 고체 전해질막을 구비하는 저항 변화 메모리소자, 및 이의 동작방법 |
| US8441060B2 (en) * | 2008-10-01 | 2013-05-14 | Panasonic Corporation | Nonvolatile memory element and nonvolatile memory device incorporating nonvolatile memory element |
| JP5464148B2 (ja) * | 2008-12-26 | 2014-04-09 | 日本電気株式会社 | 抵抗変化素子 |
-
2010
- 2010-04-09 JP JP2012504904A patent/JP5716012B2/ja not_active Expired - Fee Related
- 2010-04-09 WO PCT/US2010/030619 patent/WO2010118380A2/en not_active Ceased
- 2010-04-09 KR KR1020117023491A patent/KR20120006502A/ko not_active Ceased
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