JP2012525692A5 - - Google Patents

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Publication number
JP2012525692A5
JP2012525692A5 JP2012507683A JP2012507683A JP2012525692A5 JP 2012525692 A5 JP2012525692 A5 JP 2012525692A5 JP 2012507683 A JP2012507683 A JP 2012507683A JP 2012507683 A JP2012507683 A JP 2012507683A JP 2012525692 A5 JP2012525692 A5 JP 2012525692A5
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JP
Japan
Prior art keywords
dielectric layer
metal
layer
component according
optoelectronic component
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JP2012507683A
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English (en)
Japanese (ja)
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JP5740551B2 (ja
JP2012525692A (ja
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Priority claimed from DE102009022900.0A external-priority patent/DE102009022900B4/de
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Publication of JP2012525692A publication Critical patent/JP2012525692A/ja
Publication of JP2012525692A5 publication Critical patent/JP2012525692A5/ja
Application granted granted Critical
Publication of JP5740551B2 publication Critical patent/JP5740551B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012507683A 2009-04-30 2010-04-21 光電構成素子およびその製造方法 Expired - Fee Related JP5740551B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009019520.3 2009-04-30
DE102009019520 2009-04-30
DE102009022900.0A DE102009022900B4 (de) 2009-04-30 2009-05-27 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102009022900.0 2009-05-27
PCT/EP2010/055289 WO2010124979A1 (de) 2009-04-30 2010-04-21 Optoelektronisches bauelement und verfahren zu dessen herstellung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015000285A Division JP2015130344A (ja) 2009-04-30 2015-01-05 光電構成素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2012525692A JP2012525692A (ja) 2012-10-22
JP2012525692A5 true JP2012525692A5 (https=) 2013-05-02
JP5740551B2 JP5740551B2 (ja) 2015-06-24

Family

ID=42979234

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012507683A Expired - Fee Related JP5740551B2 (ja) 2009-04-30 2010-04-21 光電構成素子およびその製造方法
JP2015000285A Granted JP2015130344A (ja) 2009-04-30 2015-01-05 光電構成素子およびその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015000285A Granted JP2015130344A (ja) 2009-04-30 2015-01-05 光電構成素子およびその製造方法

Country Status (7)

Country Link
US (2) US8680563B2 (https=)
EP (1) EP2425037A1 (https=)
JP (2) JP5740551B2 (https=)
KR (1) KR20120042747A (https=)
CN (1) CN102439197B (https=)
DE (1) DE102009022900B4 (https=)
WO (1) WO2010124979A1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009022900B4 (de) * 2009-04-30 2026-02-26 Pictiva Displays International Limited Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102010040839B4 (de) * 2010-09-15 2013-10-17 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektronsichen Bauelements und elektronisches Bauelement
US20130242533A1 (en) * 2011-09-12 2013-09-19 Appotronics Corporation Limited Method and apparatus for a color filter
JP5366279B1 (ja) * 2012-03-06 2013-12-11 独立行政法人科学技術振興機構 多重量子井戸型太陽電池及び多重量子井戸型太陽電池の製造方法
KR101387918B1 (ko) * 2012-04-30 2014-04-23 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조 방법
FR2992098A1 (fr) * 2012-06-19 2013-12-20 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede de fabrication.
CN102728238B (zh) * 2012-07-06 2015-02-18 南京工业大学 聚丙烯分离膜表面改性的方法
DE112012006689B4 (de) * 2012-07-10 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Verkapselung eines optoelektronischen Bauelements und Leuchtdioden-Chip
CN103840089B (zh) * 2012-11-20 2016-12-21 群康科技(深圳)有限公司 有机发光二极管装置及其显示面板
JP2014149994A (ja) * 2013-02-01 2014-08-21 Denso Corp 表示装置の製造方法
CN104009180A (zh) * 2013-02-26 2014-08-27 海洋王照明科技股份有限公司 有机电致发光器件及其制备方法
JP6611701B2 (ja) * 2013-03-15 2019-11-27 アーケマ・インコーポレイテッド 窒素含有透明導電性酸化物キャップ層組成物
JP6119408B2 (ja) * 2013-05-09 2017-04-26 ソニー株式会社 原子層堆積装置
EP2918701A1 (en) * 2014-03-14 2015-09-16 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method of manufacturing a stacked organic light emitting diode, stacked OLED device, and apparatus for manufacturing thereof
FR3020179B1 (fr) * 2014-04-22 2017-10-06 Saint Gobain Electrode supportee transparente pour oled
DE102014111346B4 (de) * 2014-08-08 2022-11-03 Pictiva Displays International Limited Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung
US9490453B2 (en) * 2014-10-06 2016-11-08 Winbond Electronics Corp. Quasi-crystal organic light-emitting display panel and method for simulating optical efficiency of the same
DE102015112681B4 (de) * 2015-08-03 2025-08-28 Pictiva Displays International Limited Organisches optoelektronisches Bauelement und Verfahren zum Herstellen eines organischen optoelektronischen Bauelements
DE102016103059A1 (de) * 2016-02-22 2017-08-24 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
CN106784350A (zh) * 2016-12-23 2017-05-31 京东方科技集团股份有限公司 一种有机电致发光显示面板及其制作方法、显示装置
CN108123050B (zh) * 2017-12-04 2020-05-12 武汉华美晨曦光电有限责任公司 一种以交流驱动的白光oled器件
DE102020113616A1 (de) * 2020-02-24 2021-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Hartmaskenschicht unter einer durchkontaktierungsstruktur in einer anzeigevorrichtung
US11682692B2 (en) 2020-02-24 2023-06-20 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask layer below via structure in display device

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI92897C (fi) * 1993-07-20 1995-01-10 Planar International Oy Ltd Menetelmä kerrosrakenteen valmistamiseksi elektroluminenssikomponentteja varten
JP3561549B2 (ja) 1995-04-07 2004-09-02 三洋電機株式会社 有機エレクトロルミネッセンス素子
JP3724589B2 (ja) 1996-07-29 2005-12-07 ケンブリッジ ディスプレイ テクノロジー リミテッド エレクトロルミネセンス素子
JPH11224781A (ja) 1998-02-05 1999-08-17 Pioneer Electron Corp 有機elディスプレイ及びその製造方法
JP2000268973A (ja) * 1999-03-17 2000-09-29 Tdk Corp 有機el素子
KR100692598B1 (ko) * 1999-09-22 2007-04-13 한국전자통신연구원 이중 절연층을 갖는 유기전기발광소자의 구조 및 제조방법
US6576053B1 (en) 1999-10-06 2003-06-10 Samsung Electronics Co., Ltd. Method of forming thin film using atomic layer deposition method
TW515032B (en) 1999-10-06 2002-12-21 Samsung Electronics Co Ltd Method of forming thin film using atomic layer deposition method
US7560175B2 (en) * 1999-12-31 2009-07-14 Lg Chem, Ltd. Electroluminescent devices with low work function anode
JP4556282B2 (ja) 2000-03-31 2010-10-06 株式会社デンソー 有機el素子およびその製造方法
JP2002208479A (ja) * 2001-01-05 2002-07-26 Toppan Printing Co Ltd 有機led素子用中間抵抗膜付基板および有機led素子
GB0111751D0 (en) * 2001-05-14 2001-07-04 Opsys Ltd A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
WO2002093662A2 (en) 2001-05-14 2002-11-21 Cdt Oxford Limited A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
KR101178006B1 (ko) 2002-07-19 2012-08-28 이데미쓰 고산 가부시키가이샤 유기 전기발광 소자 및 유기 발광 매체
JP2005259550A (ja) * 2004-03-12 2005-09-22 Idemitsu Kosan Co Ltd 有機el素子及び表示装置
US7183707B2 (en) * 2004-04-12 2007-02-27 Eastman Kodak Company OLED device with short reduction
DE102004022004B4 (de) * 2004-05-03 2007-07-05 Novaled Ag Schichtanordnung für eine organische lichtemittierende Diode
WO2006014591A2 (en) 2004-07-08 2006-02-09 Itn Energy Systems, Inc. Permeation barriers for flexible electronics
JP2007090803A (ja) * 2005-09-30 2007-04-12 Fujifilm Corp ガスバリアフィルム、並びに、これを用いた画像表示素子および有機エレクトロルミネッセンス素子
WO2007079500A2 (en) * 2006-01-04 2007-07-12 The Regents Of The University Of California Passivating layer for photovoltaic cells
US7564063B2 (en) * 2006-03-23 2009-07-21 Eastman Kodak Company Composite electrode for light-emitting device
US20080100202A1 (en) 2006-11-01 2008-05-01 Cok Ronald S Process for forming oled conductive protective layer
KR20080051572A (ko) * 2006-12-06 2008-06-11 주성엔지니어링(주) 유기 전계 발광 소자 및 그 제조 방법
JP2009081409A (ja) * 2007-04-27 2009-04-16 Fujifilm Corp 有機電界発光素子
US7911133B2 (en) * 2007-05-10 2011-03-22 Global Oled Technology Llc Electroluminescent device having improved light output
WO2009002892A1 (en) * 2007-06-22 2008-12-31 The Regents Of The University Of Colorado Protective coatings for organic electronic devices made using atomic layer deposition and molecular layer deposition techniques
TWI420722B (zh) 2008-01-30 2013-12-21 歐斯朗奧托半導體股份有限公司 具有封裝單元之裝置
DE102009022900B4 (de) * 2009-04-30 2026-02-26 Pictiva Displays International Limited Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

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