DE102009022900B4 - Optoelektronisches Bauelement und Verfahren zu dessen Herstellung - Google Patents

Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Info

Publication number
DE102009022900B4
DE102009022900B4 DE102009022900.0A DE102009022900A DE102009022900B4 DE 102009022900 B4 DE102009022900 B4 DE 102009022900B4 DE 102009022900 A DE102009022900 A DE 102009022900A DE 102009022900 B4 DE102009022900 B4 DE 102009022900B4
Authority
DE
Germany
Prior art keywords
layer
metal
dielectric layer
anode
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102009022900.0A
Other languages
German (de)
English (en)
Other versions
DE102009022900A1 (de
Inventor
Dr. Schlenker Tilman
Dr. Pätzold Ralph
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pictiva Displays International Ltd
Original Assignee
Pictiva Displays International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102009022900.0A priority Critical patent/DE102009022900B4/de
Application filed by Pictiva Displays International Ltd filed Critical Pictiva Displays International Ltd
Priority to CN201080019112.1A priority patent/CN102439197B/zh
Priority to KR20117028329A priority patent/KR20120042747A/ko
Priority to PCT/EP2010/055289 priority patent/WO2010124979A1/de
Priority to JP2012507683A priority patent/JP5740551B2/ja
Priority to US13/318,341 priority patent/US8680563B2/en
Priority to EP10718924A priority patent/EP2425037A1/de
Publication of DE102009022900A1 publication Critical patent/DE102009022900A1/de
Priority to US14/152,608 priority patent/US9130189B2/en
Priority to JP2015000285A priority patent/JP2015130344A/ja
Application granted granted Critical
Publication of DE102009022900B4 publication Critical patent/DE102009022900B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
DE102009022900.0A 2009-04-30 2009-05-27 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung Active DE102009022900B4 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE102009022900.0A DE102009022900B4 (de) 2009-04-30 2009-05-27 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
KR20117028329A KR20120042747A (ko) 2009-04-30 2010-04-21 광전 소자 및 그 제조 방법
PCT/EP2010/055289 WO2010124979A1 (de) 2009-04-30 2010-04-21 Optoelektronisches bauelement und verfahren zu dessen herstellung
JP2012507683A JP5740551B2 (ja) 2009-04-30 2010-04-21 光電構成素子およびその製造方法
CN201080019112.1A CN102439197B (zh) 2009-04-30 2010-04-21 光电子元件及其制备方法
US13/318,341 US8680563B2 (en) 2009-04-30 2010-04-21 Optoelectronic component and method for the production thereof
EP10718924A EP2425037A1 (de) 2009-04-30 2010-04-21 Optoelektronisches bauelement und verfahren zu dessen herstellung
US14/152,608 US9130189B2 (en) 2009-04-30 2014-01-10 Optoelectronic component and method for the production thereof
JP2015000285A JP2015130344A (ja) 2009-04-30 2015-01-05 光電構成素子およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009019520.3 2009-04-30
DE102009019520 2009-04-30
DE102009022900.0A DE102009022900B4 (de) 2009-04-30 2009-05-27 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
DE102009022900A1 DE102009022900A1 (de) 2010-11-18
DE102009022900B4 true DE102009022900B4 (de) 2026-02-26

Family

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DE102009022900.0A Active DE102009022900B4 (de) 2009-04-30 2009-05-27 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Country Status (7)

Country Link
US (2) US8680563B2 (https=)
EP (1) EP2425037A1 (https=)
JP (2) JP5740551B2 (https=)
KR (1) KR20120042747A (https=)
CN (1) CN102439197B (https=)
DE (1) DE102009022900B4 (https=)
WO (1) WO2010124979A1 (https=)

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DE102009022900B4 (de) * 2009-04-30 2026-02-26 Pictiva Displays International Limited Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102010040839B4 (de) * 2010-09-15 2013-10-17 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektronsichen Bauelements und elektronisches Bauelement
US20130242533A1 (en) * 2011-09-12 2013-09-19 Appotronics Corporation Limited Method and apparatus for a color filter
JP5366279B1 (ja) * 2012-03-06 2013-12-11 独立行政法人科学技術振興機構 多重量子井戸型太陽電池及び多重量子井戸型太陽電池の製造方法
KR101387918B1 (ko) * 2012-04-30 2014-04-23 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조 방법
FR2992098A1 (fr) * 2012-06-19 2013-12-20 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede de fabrication.
CN102728238B (zh) * 2012-07-06 2015-02-18 南京工业大学 聚丙烯分离膜表面改性的方法
DE112012006689B4 (de) * 2012-07-10 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Verkapselung eines optoelektronischen Bauelements und Leuchtdioden-Chip
CN103840089B (zh) * 2012-11-20 2016-12-21 群康科技(深圳)有限公司 有机发光二极管装置及其显示面板
JP2014149994A (ja) * 2013-02-01 2014-08-21 Denso Corp 表示装置の製造方法
CN104009180A (zh) * 2013-02-26 2014-08-27 海洋王照明科技股份有限公司 有机电致发光器件及其制备方法
JP6611701B2 (ja) * 2013-03-15 2019-11-27 アーケマ・インコーポレイテッド 窒素含有透明導電性酸化物キャップ層組成物
JP6119408B2 (ja) * 2013-05-09 2017-04-26 ソニー株式会社 原子層堆積装置
EP2918701A1 (en) * 2014-03-14 2015-09-16 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method of manufacturing a stacked organic light emitting diode, stacked OLED device, and apparatus for manufacturing thereof
FR3020179B1 (fr) * 2014-04-22 2017-10-06 Saint Gobain Electrode supportee transparente pour oled
DE102014111346B4 (de) * 2014-08-08 2022-11-03 Pictiva Displays International Limited Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung
US9490453B2 (en) * 2014-10-06 2016-11-08 Winbond Electronics Corp. Quasi-crystal organic light-emitting display panel and method for simulating optical efficiency of the same
DE102015112681B4 (de) * 2015-08-03 2025-08-28 Pictiva Displays International Limited Organisches optoelektronisches Bauelement und Verfahren zum Herstellen eines organischen optoelektronischen Bauelements
DE102016103059A1 (de) * 2016-02-22 2017-08-24 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
CN106784350A (zh) * 2016-12-23 2017-05-31 京东方科技集团股份有限公司 一种有机电致发光显示面板及其制作方法、显示装置
CN108123050B (zh) * 2017-12-04 2020-05-12 武汉华美晨曦光电有限责任公司 一种以交流驱动的白光oled器件
DE102020113616A1 (de) * 2020-02-24 2021-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Hartmaskenschicht unter einer durchkontaktierungsstruktur in einer anzeigevorrichtung
US11682692B2 (en) 2020-02-24 2023-06-20 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask layer below via structure in display device

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WO2008140644A1 (en) 2007-05-10 2008-11-20 Eastman Kodak Company Electroluminescent device having improved light output
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Also Published As

Publication number Publication date
JP5740551B2 (ja) 2015-06-24
JP2015130344A (ja) 2015-07-16
WO2010124979A1 (de) 2010-11-04
CN102439197A (zh) 2012-05-02
CN102439197B (zh) 2015-04-01
US20140117345A1 (en) 2014-05-01
US9130189B2 (en) 2015-09-08
JP2012525692A (ja) 2012-10-22
DE102009022900A1 (de) 2010-11-18
EP2425037A1 (de) 2012-03-07
US20120119253A1 (en) 2012-05-17
KR20120042747A (ko) 2012-05-03
US8680563B2 (en) 2014-03-25

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