WO2013076073A1 - Verfahren zum herstellen eines opto-elektronischen bauelements und opto-elektronisches bauelement - Google Patents
Verfahren zum herstellen eines opto-elektronischen bauelements und opto-elektronisches bauelement Download PDFInfo
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- WO2013076073A1 WO2013076073A1 PCT/EP2012/073091 EP2012073091W WO2013076073A1 WO 2013076073 A1 WO2013076073 A1 WO 2013076073A1 EP 2012073091 W EP2012073091 W EP 2012073091W WO 2013076073 A1 WO2013076073 A1 WO 2013076073A1
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- WO
- WIPO (PCT)
- Prior art keywords
- layer
- layer structure
- electrode
- etching process
- anisotropic etching
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 34
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- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a method for producing an optoelectronic component and to an optoelectronic component.
- Opto-electronic devices having organic functional layers often have encapsulant layers over the organic functional layers that protect, for example, the organic functional layers
- the encapsulation layers are
- deposited by deposition for example by atomic layer deposition or
- Such coated, encapsulated contacts can not be easily contacted. To expose the contacts, it is known to scratch these by hand free, which is very time consuming and therefore expensive.
- a method for producing an optoelectronic component and an optoelectronic component in which the contacts can be exposed in a simple manner.
- a method for producing an opto-electronic device in various embodiments, a method for producing an opto-electronic device
- the method may include: forming a first electrode on a substrate; Forming an organic functional layer structure on the first electrode; Forming a second electrode on the organic functional layer structure; Make at least one
- Electrode Forming an encapsulation layer over the
- Etching process can help make the contact fast
- One, two or more contacts can be provided and exposed by means of the anisotropic etching process.
- the contacts may be assigned to an optoelectronic component or a plurality of optoelectronic components, in particular an organic functional layer structure or a plurality of organic functional layer structures.
- the contact (s) may be located adjacent to the corresponding organic functional layer structure.
- the optoelectronic component is a light-emitting component, for example an organic light-emitting diode.
- the opto-electronic component may be a light-absorbing component, for example an organic solar cell.
- anisotropic etching method a dry etching method
- Dry etching can be performed.
- Dry etching method may be, for example, a plasma-assisted etching method, for example, an ICP plasma method. According to various embodiments is over the
- Encapsulation layer and the layer structure to protect, for example, in the anisotropic etching process or even after performing the anisotropic etching process,
- the cover is fixed by means of adhesive. This helps to easily secure the cover to the encapsulation layer.
- the adhesive is applied so that it is in the anisotropic etching process as an etch stop for the encapsulation layer over the
- the adhesive serves not only to secure the cover, but also to protect the encapsulation layer in the anisotropic etching process.
- Etching process serves as an etch stop for the corresponding edge. If the layers of the layer structure lie on one another in a vertical direction, then the flanks of the layer structure
- Layer structure represents the sides of the layer structure at which the layer structure ends in the horizontal direction.
- the adhesive can be applied so that it covers the flanks of the layer structure, so that the flanks of the layer structure are easily protected laterally.
- a lacquer is applied above and / or next to the layer structure such that the lacquer serves as an etching stop for the layer structure and / or its flank in the anisotropic etching process.
- the lacquer may be applied additionally or alternatively to the adhesive and / or the cover.
- the contact is made to serve as its own etch stop and / or as an etch stop for the substrate in the anisotropic etch process.
- the contact for example, from a
- the contact may include or be formed of chromium.
- the substrate is cooled before and / or during the anisotropic etching process. In known anisotropic etching processes, temperatures may occur at which the organic functional
- Substrate may contribute to that of the opto ⁇ electronic device during the anisotropic
- the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
- Encapsulation layer is also applied to a side facing away from the layer structure back of the substrate.
- At least one further encapsulation layer is formed over the layer structure and the contact. Both encapsulation layers over the contact are removed by means of the anisotropic etching process.
- an optoelectronic component is provided, which is formed by means of the method according to one of the preceding claims.
- Figure 1 shows an embodiment of an opto-electronic
- Figure 2 shows an embodiment of an opto-electronic
- Figure 3 shows an embodiment of an opto-electronic
- FIG. 4 shows a flow chart of an exemplary embodiment of a method for producing an optoelectronic component.
- An optoelectronic component can, in various exemplary embodiments, be used as a light-absorbing component, for example as a solar cell, or as a light-emitting component, for example as an organic light
- OLED emitting diode
- OLED organic light emitting transistor
- emitting device can be in different
- Embodiments be part of an integrated circuit. Furthermore, a plurality of light-emitting
- FIG. 1 shows a cross-sectional view of an organic light emitting device 10 according to various
- the light-emitting component 10 in the form of a
- organic light emitting diode may include a substrate 12.
- the substrate 12 may serve as a support for electronic elements or layers, such as light-emitting elements.
- electronic elements or layers such as light-emitting elements.
- Substrate 12 glass or quartz, and / or a semiconductor material or any other suitable material or be formed therefrom. Furthermore, the substrate 12 may comprise or be formed from a steel foil, a plastic foil or a laminate with one or more plastic foils. The plastic may contain one or more polyolefins
- the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),
- the substrate 12 may comprise one or more of the above-mentioned materials.
- the substrate 12 may
- translucent or “translucent layer” can be understood in various embodiments that a layer is permeable to light
- the light generated by the light emitting device for example one or more
- Wavelength ranges for example, for light in one
- Wavelength range of the visible light for example, at least in a partial region of the wavelength range of 380 nm to 780 nm.
- the term "translucent layer” in various embodiments is to be understood to mean that substantially all of them are in one
- Quantity of light is also coupled out of the structure (for example, layer), wherein a portion of the light can be scattered in this case
- transparent or “transparent layer” can be understood in various embodiments that a layer is transparent to light
- Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is coupled out of the structure (for example layer) substantially without scattering or light conversion.
- Embodiments as a special case of "translucent" to look at.
- the optically translucent layer structure at least in a partial region of the wavelength range of the desired monochrome light or for the limited
- Emission spectrum is translucent.
- emissive device 10 may be configured as a top emitter or as a bottom emitter or as a top and bottom emitter.
- a top and bottom emitter can also be referred to as an optically transparent component, for example a transparent organic light-emitting diode.
- the substrate 12 may be in different
- Embodiments optionally be arranged not shown in the figures, a barrier layer.
- Barrier layer can be one or more of the following
- Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum ⁇ doped zinc oxide, and mixtures and alloys
- the barrier layer may have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example one
- An electrically active region of the light-emitting component 10 may be arranged on or above the barrier layer.
- the electrically active region may be understood as the region of the light emitting device 10 in which an electric current flows for operation of the light emitting device 10.
- the electrically active region may have a first electrode 13, a second electrode 15 and an organic functional layer structure 14, as will be explained in more detail below.
- the first Electrode 13 on or above the barrier layer (or, if the barrier layer is not present, on or above the substrate 12), the first Electrode 13 (for example in the form of a first
- Electrode layer 13 may be applied.
- the first electrode 13 (hereinafter also referred to as lower electrode 13) may be formed of or be made of an electrically conductive material, such as a metal or a conductive conductive oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or the same TCO or different TCOs.
- Transparent conductive oxides are transparent, conductive materials, for example metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
- binary metal oxygen compounds such as ZnO, SnO 2 or In 2 O 3
- ternary metal oxygen compounds such as AlZnO,
- Zn2SnO4 CdSnO3, ZnSnO3, Mgln204, GalnO3, Zn2In205 or
- In4Sn3012 or mixtures of different transparent conductive oxides to the group of TCOs can be used in various embodiments.
- TCOs do not necessarily correspond to one
- stoichiometric composition and may also be p-doped or n-doped.
- Electrode 13 comprises a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm or Li, and
- Electrode 13 are formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa.
- An example is one
- ITO indium tin oxide
- Electrode 13 provide one or more of the following materials, as an alternative or in addition to the materials mentioned above: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.
- the first electrode 13 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.
- Electrode 13 and the substrate 12 may be translucent or transparent.
- the first electrode 13 is formed of a metal
- the first electrode 13 may have, for example, a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm, for example one
- Layer thickness of less than or equal to about 18 nm.
- the first electrode 13 may, for example, have a layer thickness of greater than or equal to approximately 10 nm, for example a layer thickness of greater than or equal to approximately 15 nm. In various exemplary embodiments, the first electrode 13 may have a layer thickness in one
- Range of about 10 nm to about 25 nm for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.
- the first electrode 13 may have, for example, a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range of
- the first electrode 13 is made of, for example, a network of metallic nanowires, for example of Ag, that with conductive polymers
- the first electrode 13 may be combined, a network of carbon nanotubes, which may be combined with conductive polymers, or is formed of graphene layers and composites, the first electrode 13, for example, have a layer thickness in a range of about 1 nm to about 500 nm, for example a layer thickness in a range of about 10 nm to about 400 nm, for example, a
- Layer thickness in a range of about 40 nm to about 250 nm.
- the first electrode 13 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.
- the first electrode 13 is electrically connected to a contact 16, to which a first electrical potential
- the first electrical potential can be applied.
- the ground potential for example, the ground potential or another
- the electrically active region of the light-emitting component 10 has the organic functional layer structure 14 which is on or above the first
- Electrode 13 is or is applied. That the
- Layer structure is functional, may mean that the layer structure is electroluminescent. In this
- the organic functional can be related
- Layer structure 14 may also be referred to as organic electroluminescent layer structure.
- the organic functional layer structure 14 may include one or more emitter layers, for example with
- hole-conducting layers also referred to as hole-transport layer (s)
- various embodiments may alternatively or additionally comprise one or more electron conduction layers (also referred to as electron transport layer (s))
- electron conduction layers also referred to as electron transport layer (s)
- Embodiments of the emitter layer (s) can be used include organic or organometallic
- Iridium complexes such as blue phosphorescent FIrPic
- Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited in particular by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).
- the emitter materials may be suitably embedded in a matrix material. It should be noted that other suitable emitter materials are also provided in other embodiments.
- the emitter materials of the emitter layer (s) of the light-emitting device 10 may be so
- the emitter layer (s) may include several emitter materials of different colors (for example blue and yellow or blue, green and red)
- the emitter layer (s) may also be composed of several sub-layers, such as a blue-fluorescent emitter layer or blue-phosphorescent emitter layer, a green-phosphorescent emitter layer and a red-phosphorescent emitter layer. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided in the beam path through this
- Layers generated primary emission to arrange a converter material that at least partially absorbs the primary radiation and emits a secondary radiation of different wavelength, so that from a (not yet white)
- Primary radiation through the combination of primary radiation and secondary radiation gives a white color impression.
- the organic functional layer structure 14 may be any organic functional layer structure 14.
- the one or more functional layers may or may not be organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these materials
- the organic functional layer structure 14 may comprise one or more functional layers that are or are designed as hole transport layer, so that, for example in the case of an OLED, an effective hole injection into an electroluminescent Layer or an electroluminescent region is made possible.
- the organic functional layer structure 14 may comprise one or more functional layers, which may be referred to as a
- Electron transport layer is or are designed so that, for example, in an OLED an effective
- Electron injection into an electroluminescent layer or an electroluminescent region is made possible.
- a material for the hole transport layer can be any material for the hole transport layer.
- the one or more functional layers may or may be considered
- Emitter layer may be applied to or over the hole transport layer, for example deposited.
- Electron transport layer applied to or over the emitter layer, for example deposited.
- the organic functional layer structure 14 ie, for example, the sum of the thicknesses of hole transport layer (s) and
- Emitter layer (s) and electron transport layer (s)) have a layer thickness of at most about 1.5 ym
- the organic functional layer structure 14 may be, for example, a stack of a plurality of directly superimposed organic light-emitting diodes (OLEDs), each OLED
- a layer thickness may have a maximum of about 1.5 ym, for example, a layer thickness of at most about 1.2 ym, for example, a layer thickness of at most about 1 ym, for example, a layer thickness of at most about 800 nm, for example, a layer thickness of at most about 500 nm
- a layer thickness of at most about 400 nm for example, a layer thickness of at most about 300 nm.
- the organic functional layer structure 14 may have a layer thickness of at most about 3 ym.
- the light emitting device 10 may generally include other organic functional layers, for example
- Electron transport layer (s), which serve the functionality and thus the efficiency of the light are Electron transport layer (s), which serve the functionality and thus the efficiency of the light
- the second electrode 15 may be applied (for example in the form of a second electrode layer 15).
- Electrode 15 have the same materials or be formed therefrom as the first electrode 13, wherein in
- the second senor are suitable.
- the second senor are suitable.
- the second senor are suitable.
- the second senor are suitable.
- the second senor are suitable.
- Electrode 15 (for example, in the case of a metallic second electrode 15), for example, have a layer thickness of less than or equal to about 50 nm,
- a layer thickness of less than or equal to approximately 45 nm for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm,
- a layer thickness of less than or equal to about 25 nm for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.
- the second electrode 15 may generally be formed in a manner similar to, or different from, the first electrode 13.
- the second electrode 15 can in various embodiments of one or more of the materials and with the respective layer thickness
- the first electrode 13 and the second electrode 15 are both formed translucent or transparent.
- the second electrode 15 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.
- the second electrode 15 may have a second electrical
- the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.
- Encapsulation layer 18 for example in the form of a
- a “barrier thin-film” or a “barrier thin-film” can be understood as meaning, for example, a layer or a layer structure which is suitable for providing a barrier to chemical
- the encapsulation layer 18 is designed such that it can be damaged by OLED-damaging substances such as
- Water, oxygen or solvents can not or at most be penetrated to very small proportions.
- the encapsulation layer 18 may be formed as a single layer (in other words, as
- Single layer may be formed.
- the encapsulation layer 18 have a plurality of sub-layers formed on each other.
- the encapsulation layer 18 have a plurality of sub-layers formed on each other.
- Encapsulation layer 18 may be formed as a layer stack (stack). The encapsulation layer 18 or one or more sub-layers of the encapsulation layer 18 can
- Atomic Layer Deposition e.g. plasma-enhanced atomic layer deposition (PEALD) or plasmaless
- CVD plasma enhanced chemical vapor deposition
- PLCVD plasmaless plasma vapor deposition
- ALD atomic layer deposition process
- Encapsulation layer 18 which has multiple sub-layers, all sub-layers are formed by means of a Atom harshabscheide Kunststoffs.
- a layer sequence comprising only ALD layers may also be referred to as "nanolaminate”.
- Encapsulation layer 18 comprising a plurality of sub-layers, one or more sub-layers of the encapsulation layer 18 by means of a different deposition method than one
- Atomic layer deposition processes are deposited
- the encapsulant layer 18 may, in one embodiment, have a layer thickness of about 0.1 nm (one atomic layer) to about 450 nm, for example, a layer thickness of about 10 nm to about 10 nm according to a Embodiment, for example, about 40 nm according to an embodiment.
- all partial layers can have the same layer thickness. According to another embodiment in which the encapsulation layer 18 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another embodiment in which the encapsulation layer 18 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another embodiment in which the encapsulation layer 18 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another embodiment in which the encapsulation layer 18 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another embodiment in which the encapsulation layer 18 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another embodiment in which the encapsulation layer 18 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another embodiment in which the encapsulation layer 18 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another embodiment in which the encapsulation layer 18 has a plurality of partial
- Encapsulation layer 18 have different layer thicknesses. In other words, at least one of
- Partial layers have a different layer thickness than one or more other of the sub-layers.
- the encapsulation layer 18 or the individual sub-layers of the encapsulation layer 18 may be formed according to an embodiment as a translucent or transparent layer.
- the encapsulation layer 18 (or the individual sub-layers of the encapsulation layer 18) may consist of a translucent or transparent material (or a combination of materials that is translucent or transparent).
- Encapsulation layer 18 comprise or consist of one of the following materials: alumina, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide
- Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys
- the encapsulant layer 18 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the encapsulant layer 18 may comprise one or more high refractive index materials, in other words one or more high refractive index materials, for example a refractive index of at least 2.
- an adhesive 20 and / or a protective lacquer may be provided, by means of which, for example, a cover 22 (for example, a
- the optically translucent layer of adhesive 20 and / or protective lacquer may have a layer thickness of greater than 1 ⁇ m
- a layer thickness of several ym for example, a layer thickness of several ym.
- the adhesive 20 may include or be a lamination adhesive 20.
- the cover 22 may protrude beyond the adhesive 20 or paint or the adhesive 20 or paint may protrude below the cover 22.
- the layer of the adhesive 20 (also referred to as
- Adhesive layer may be embedded in various embodiments, light scattering particles, which contribute to a further improvement of the color angle distortion and the
- Embodiments may be provided as light-scattering particles, for example, scattering dielectric articles such as metal oxides, e.g. Silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga20a)
- metal oxides e.g. Silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga20a)
- Alumina, or titania may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres.
- metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as light-scattering particles.
- the adhesive 20 may be configured to have a refractive index of its own which is smaller than the refractive index of
- Such adhesive 20 may be, for example, a low-refractive adhesive 20, such as an acrylate having a refractive index of about 1.3. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence.
- Embodiments also completely on an adhesive 20 can be dispensed with, for example, in embodiments in which the cover 22, for example made of glass, is applied by means of, for example, plasma spraying.
- the / may
- Cover 22 and / or the adhesive 20 have a refractive index (for example, at a wavelength of 633 nm) of 1.55.
- FIG. 2 shows a cross-sectional view of the organic light emitting device 10 according to various
- Embodiments in a subsequent step of a manufacturing process in which the encapsulation layer 18 has been removed over the contacts 16 in an anisotropic etching process and so the contacts 16 were exposed.
- the encapsulation layer 16 was in a
- the contacts 16 may be formed of or comprise a material that is not or only slightly removed in the anisotropic etching process, for example, chromium. Below you can the contacts 16 are simply contacted, for example by means of bonding.
- FIG. 3 shows a cross-sectional view of the organic light emitting device 10 according to various
- Embodiments in an example, alternative or additional step of a manufacturing process in which in addition to the encapsulation layer 18 on a side facing away from the cover 22 side of the substrate 12, a further encapsulation layer 26 is applied.
- This further encapsulation layer 26 can be removed during the anisotropic etching process for exposing the contacts 16 or in an additional anisotropic etching process.
- the further encapsulation layer 26 can according to the
- Encapsulation layer 18 or otherwise
- FIG. 4 shows a flowchart in which a method for producing the light-emitting component 10 according to various exemplary embodiments is illustrated.
- the contacts 16 are formed on the substrate 12.
- the contacts 16 may be connected during the process or subsequently with other contacts or tracks, for example by means of
- Step S4 and S6 may be reversed.
- the second electrode 15 is formed on the organic functional layer structure 14.
- the active region of the light-emitting device is formed and contacted.
- the encapsulation layer 18 is formed.
- step S12 which can optionally be carried out, the adhesive 20 and / or the paint can be applied.
- the cover 22 is fastened in a step S14.
- a step S16 the substrate 12 is cooled.
- Substrate 12 may be before and / or during the anisotropic
- the temperature of the opto-electronic device or the temperature of parts thereof can be monitored and the cooling or the process duration can be adapted to the temperature, so that overheating of the anisotropic etching process is avoided.
- a temperature of the opto-electronic device during the anisotropic etching process can be kept below 100 ° or below 90 °.
- the process parameters of the etching process can be chosen such that the temperature of the opto-electronic
- Component does not rise above 90 ° or not over 100 °.
- a dry etching method may be performed.
- the dry etching process comprises
- subtractive (ablative) microstructure techniques that are not based on wet-chemical reactions (such as wet-chemical etching, chemical-mechanical polishing).
- the material is removed either by accelerated particles (eg argon ions) or by plasma-activated gases. It will So depending on the method used chemical as well as physical effects. For example, a physical or physico-chemical dry etching process may be performed.
- Electron beam method or laser vaporization The etching is generally carried out in high vacuum chambers to prevent interactions of the particle beam with the residual gas atoms (scattering, etc.).
- the etching is generally carried out in high vacuum chambers to prevent interactions of the particle beam with the residual gas atoms (scattering, etc.).
- bundling of the particle beam which etch very selectively, as well as large-area etching with the use of a superficially applied mask, which protects not to be etched areas from particle bombardment.
- the reaction gas is then introduced into the chamber.
- the etching process itself runs in the Principle as follows: The neutral atoms or molecules are passed through a plasma in the reaction chamber and flow over the target. There they react with the atoms on the surface. Volatile, gaseous reaction products are formed, which are sucked off via a vacuum pump.
- the gaseous starting materials are usually activated or radicalized by a plasma and then for the reaction to the
- Target directed This can be done either by convection or by electrostatic acceleration of the ions via an applied electric field.
- RIE reactive ion etching
- RIE reactive ion etching
- Ionentiefenurbanen English, deep reactive ion etching, DRIE
- reactive ion beam etching engagingl, reactive ion beam etching
- HDP Etching from English, high-density plasma etching
- a plasma-assisted etching process may be performed, such as an ICP plasma process or an RIE process.
- Two etching mechanisms are used in one process, on the one hand the ion bombardment of the
- Process chamber of an etching system can be performed.
- the anisotropic etch process may be performed at a pressure in the process chamber between 0 and 760 Torr.
- RF power and / or ICP power may range from 1W to 2000W.
- the process gas for example, argon can be added with 0 to 10000 sccm. In this case, for example, an etching rate of 5 nm per minute can be achieved.
- the pressure in the process chamber may be between 0 and 1 torr.
- RF power and / or ICP power may range from 1W to 2000W.
- argon for example an argon plasma, or nitrogen trifluoride with 0 to 10000 sccm can be added as the process gas. In this case, for example, an etching rate of 35 nm per minute can be achieved.
- Encapsulation layers 18 which comprise or are formed from Al 2 O 3 , T1O 2 or ZrO 2 are advantageous.
- the duration of the etching process can be controlled or regulated by monitoring optical emission.
- the process parameters mentioned can vary greatly depending on the etching system used and on the type and thickness of the encapsulation layer 18.
- the pressure can vary from high vacuum to normal atmospheric pressure.
- other or further gases may be used, for example, fluorine compounds further, such as sulfur hexafluoride.
- the further encapsulation layer 26 can optionally be removed. The step S20 may be performed simultaneously, before or after the step S18.
- the different layers for example the
- Encapsulation layers 18, 26, the electrodes 13, 15 and the other layers of the electrically active region such as the organic functional layer structure 14, the hole transport layer (s) or the
- Electron transport layer (s) can be applied by various processes, for example deposited, for example by means of a CVD process
- a plasma-enhanced chemical vapor deposition method (PE-CVD) can be used in various embodiments.
- PE-CVD plasma-enhanced chemical vapor deposition method
- a plasma is generated around, wherein the volume is at least two gaseous
- dielectric layer compared to a plasmaless CVD method can be lowered. This can be an advantage, for example, if the element, for example, the light to be emitted
- the electronic component would be damaged at a temperature above a maximum temperature. Furthermore, it can be provided to measure the optical transparency of the structure having the electrically active region after forming the electrically active region and before the covering is formed. Depending on the measured optical transparency, then a desired optical target transparency of the electrically active region
- the choice of a suitable layer thickness and / or a suitable choice of material may be achieved by means of one or more intermediate layers or interlayer structures
- Embodiments in a range of 50 nm to 150 nm As shown above, the transparency of the light-emitting device depending on
- such a low refractive index layer i.e., having a refractive index of less than 1.5
- refractive index layer i.e., having a refractive index of less than 1.5
- a low refractive interlayer or low refractive index Interlayer structure the transparency of the light
- emissive device 10 without significantly changing the overall thickness of the light-emitting device 10.
- a low-refractive interlayer or low-refractive interlayer structure to compensate for changes in transparency due to process variations of thin metal films within the light-emitting device, such as an OLED.
- the transparency can be measured, and if there is a negative deviation from the target value, it can be measured by such a thin low-refractive interlayer or low refractive index
- Interlayer structure can be compensated.
- Embodiments limited.
- the optoelectronic component can be a light-absorbing component, such as a solar cell.
- the light-absorbing component such as a solar cell.
- Manufacturing process have one or more further steps or it may have one or more steps less.
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Abstract
Description
Claims
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US14/359,580 US9112165B2 (en) | 2011-11-21 | 2012-11-20 | Method for producing an optoelectronic component, and optoelectronic component |
JP2014542798A JP5980343B2 (ja) | 2011-11-21 | 2012-11-20 | 光電子素子の製造方法 |
KR1020147017215A KR101572114B1 (ko) | 2011-11-21 | 2012-11-20 | 광전자 컴포넌트를 제조하기 위한 방법 및 광전자 컴포넌트 |
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DE102011086689.2A DE102011086689B4 (de) | 2011-11-21 | 2011-11-21 | Verfahren zum Herstellen eines opto-elektronischen Bauelements |
DE102011086689.2 | 2011-11-21 |
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JP2015207551A (ja) * | 2014-04-08 | 2015-11-19 | セイコーエプソン株式会社 | 有機el装置の製造方法、有機el装置、電子機器 |
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DE102013105364B4 (de) | 2013-05-24 | 2024-02-01 | Pictiva Displays International Limited | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102013106937B4 (de) * | 2013-07-02 | 2022-02-17 | Pictiva Displays International Limited | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102013111736A1 (de) * | 2013-10-24 | 2015-04-30 | Osram Oled Gmbh | Organische lichtemittierende Diode und Verfahren zum Herstellen einer organischen lichtemittierenden Diode |
CN107111972B (zh) * | 2014-10-28 | 2020-04-28 | 株式会社半导体能源研究所 | 功能面板、功能面板的制造方法、模块、数据处理装置 |
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Also Published As
Publication number | Publication date |
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JP2015502019A (ja) | 2015-01-19 |
KR20140096382A (ko) | 2014-08-05 |
JP5980343B2 (ja) | 2016-08-31 |
DE102011086689A1 (de) | 2013-05-23 |
US9112165B2 (en) | 2015-08-18 |
KR101572114B1 (ko) | 2015-11-26 |
DE102011086689B4 (de) | 2017-02-16 |
US20140291662A1 (en) | 2014-10-02 |
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