JP2015502019A - 光電子素子の製造方法、及び、光電子素子 - Google Patents
光電子素子の製造方法、及び、光電子素子 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
Description
12 基板
13 第1電極
14 有機機能層構造体
15 第2電極
16 コンタクト部
18 封入層
19 側面
20 接着材
22 カバー
24 照射方向
26 別の封入層
S2〜S20 ステップ2〜20
Claims (16)
- 光電子素子の製造方法において、
・基板(12)の上に、第1電極(13)を形成し、
・前記第1電極(13)の上に、有機機能層構造体(14)を形成し、
・前記有機機能層構造体(14)の上に、第2電極(15)を形成し、
・前記第1電極(13)及び/又は前記第2電極(15)のコンタクトのための少なくとも1つのコンタクト部(16)を形成し、
・前記有機機能層構造体(14)及び前記コンタクト部(16)の上に、封入層(18)を形成し、
・異方性エッチング方法によって、前記コンタクト部(16)の上にある前記封入層(18)を除去し、
・前記異方性エッチング方法の間に、前記基板(12)を冷却する、
ことを特徴とする製造方法。 - 光電子素子の製造方法において、
・基板(12)の上に、第1電極(13)を形成し、
・前記第1電極(13)の上に、有機機能層構造体(14)を形成し、
・前記有機機能層構造体(14)の上に、第2電極(15)を形成し、
・前記第1電極(13)及び/又は前記第2電極(15)のコンタクトのための少なくとも1つのコンタクト部(16)を形成し、
・前記有機機能層構造体(14)及び前記コンタクト部(16)の上に、封入層(18)を形成し、かつ、前記基板(12)の、前記有機機能層構造体(14)とは反対側の裏面の上に、別の封入層(26)を形成し、
・異方性エッチング方法によって、前記コンタクト部(16)の上にある前記封入層(18)を除去し、
・前記異方性エッチング方法又は付加的な異方性エッチング方法によって、前記裏面にある前記別の封入層(26)を除去する、
ことを特徴とする製造方法。 - 前記光電子素子は、発光素子(10)である、
ことを特徴とする請求項1又は2記載の製造方法。 - 前記光電子素子は、有機発光ダイオードである、
ことを特徴とする請求項3記載の製造方法。 - 異方性エッチング方法として、ドライエッチング方法を実施する、
ことを特徴とする請求項1から4のいずれか一項記載の製造方法。 - ドライエッチング方法として、物理的又は物理化学的ドライエッチング方法を実施する、
ことを特徴とする請求項5記載の製造方法。 - ドライエッチング方法として、プラズマ強化エッチング方法を実施する、
ことを特徴とする請求項6記載の製造方法。 - ドライエッチング方法として、ICPプラズマ方法を実施する、
ことを特徴とする請求項7記載の製造方法。 - 前記有機機能層構造体(14)の上において、前記封入層(18)の上に、カバー(22)を配置し、
前記カバー(22)は、前記異方性エッチング方法の際に、前記有機機能層構造体(14)の上にある前記封入層(18)のためのエッチングストッパとして使用される、
ことを特徴とする請求項1から8のいずれか一項記載の製造方法。 - 前記カバー(22)を、接着材(20)によって固定する、
ことを特徴とする請求項9記載の製造方法。 - 前記接着材(20)は、前記異方性エッチング方法の際に、前記有機機能層構造体(14)の上にある前記封入層(18)のためのエッチングストッパとして使用される、
ことを特徴とする請求項10記載の製造方法。 - 前記接着材(20)を、前記有機機能層構造体(14)の少なくとも1つの側面(19)を覆うように、かつ、前記異方性エッチング方法の際に、相応の前記側面(19)のためのエッチングストッパとして使用されるように被着する、
ことを特徴とする請求項10又は11記載の製造方法。 - レジストを、前記異方性エッチング方法の際に、前記有機機能層構造体(14)及び/又は前記有機機能層構造体(14)の側面(19)のためのエッチングストッパとして使用されるように、前記有機機能層構造体(14)の上及び/又は横に被着する、
ことを特徴とする請求項1から12のいずれか一項記載の製造方法。 - 前記コンタクト部(16)を、前記異方性エッチング方法の際に、該コンタクト部(16)自体のエッチングストッパとして、及び/又は、前記基板(12)のためのエッチングストッパとして使用されるように構成する、
ことを特徴とする請求項1から13のいずれか一項記載の製造方法。 - 少なくとも前記封入層(18)を、前記有機機能層構造体(14)及び前記コンタクト部(16)の上にある2つ以上の部分層として構成し、前記コンタクト部(16)の上にある前記部分層を、前記異方性エッチング方法によって除去する、
ことを特徴とする請求項1から14のいずれか一項記載の方法。 - 請求項1から15のいずれか一項記載の製造方法によって製造された光電子素子。
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