GB0111751D0 - A method of providing a layer including a metal or silicon or germanium and oxygen on a surface - Google Patents

A method of providing a layer including a metal or silicon or germanium and oxygen on a surface

Info

Publication number
GB0111751D0
GB0111751D0 GBGB0111751.4A GB0111751A GB0111751D0 GB 0111751 D0 GB0111751 D0 GB 0111751D0 GB 0111751 A GB0111751 A GB 0111751A GB 0111751 D0 GB0111751 D0 GB 0111751D0
Authority
GB
United Kingdom
Prior art keywords
germanium
oxygen
silicon
providing
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0111751.4A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OPSYS Ltd
Original Assignee
OPSYS Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OPSYS Ltd filed Critical OPSYS Ltd
Priority to GBGB0111751.4A priority Critical patent/GB0111751D0/en
Publication of GB0111751D0 publication Critical patent/GB0111751D0/en
Priority to GBGB0208230.3A priority patent/GB0208230D0/en
Priority to US10/477,336 priority patent/US20040195966A1/en
Priority to AU2002253400A priority patent/AU2002253400A1/en
Priority to JP2002590431A priority patent/JP4796741B2/en
Priority to PCT/GB2002/002181 priority patent/WO2002093662A2/en
Priority to EP02722521A priority patent/EP1388178A2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0433—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a reactive gas
    • B05D3/0453—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B05D3/107—Post-treatment of applied coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • B05D3/145—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
GBGB0111751.4A 2001-05-14 2001-05-14 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface Ceased GB0111751D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB0111751.4A GB0111751D0 (en) 2001-05-14 2001-05-14 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
GBGB0208230.3A GB0208230D0 (en) 2001-05-14 2002-04-10 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
US10/477,336 US20040195966A1 (en) 2001-05-14 2002-05-13 Method of providing a layer including a metal or silicon or germanium and oxygen on a surface
AU2002253400A AU2002253400A1 (en) 2001-05-14 2002-05-13 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
JP2002590431A JP4796741B2 (en) 2001-05-14 2002-05-13 Method for forming a layer containing metal, silicon, germanium and oxygen on a surface
PCT/GB2002/002181 WO2002093662A2 (en) 2001-05-14 2002-05-13 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
EP02722521A EP1388178A2 (en) 2001-05-14 2002-05-13 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0111751.4A GB0111751D0 (en) 2001-05-14 2001-05-14 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface

Publications (1)

Publication Number Publication Date
GB0111751D0 true GB0111751D0 (en) 2001-07-04

Family

ID=9914604

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0111751.4A Ceased GB0111751D0 (en) 2001-05-14 2001-05-14 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
GBGB0208230.3A Ceased GB0208230D0 (en) 2001-05-14 2002-04-10 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface

Family Applications After (1)

Application Number Title Priority Date Filing Date
GBGB0208230.3A Ceased GB0208230D0 (en) 2001-05-14 2002-04-10 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface

Country Status (3)

Country Link
JP (1) JP4796741B2 (en)
AU (1) AU2002253400A1 (en)
GB (2) GB0111751D0 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009022900A1 (en) * 2009-04-30 2010-11-18 Osram Opto Semiconductors Gmbh Optoelectronic component and method for its production

Also Published As

Publication number Publication date
JP2004535038A (en) 2004-11-18
JP4796741B2 (en) 2011-10-19
AU2002253400A1 (en) 2002-11-25
GB0208230D0 (en) 2002-05-22

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)