AU2001288020A1 - Method of producing silicon carbide and various forms thereof - Google Patents

Method of producing silicon carbide and various forms thereof

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Publication number
AU2001288020A1
AU2001288020A1 AU2001288020A AU8802001A AU2001288020A1 AU 2001288020 A1 AU2001288020 A1 AU 2001288020A1 AU 2001288020 A AU2001288020 A AU 2001288020A AU 8802001 A AU8802001 A AU 8802001A AU 2001288020 A1 AU2001288020 A1 AU 2001288020A1
Authority
AU
Australia
Prior art keywords
silicon carbide
various forms
producing silicon
producing
carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288020A
Inventor
Gady Golan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silbid Ltd
Original Assignee
Silbid Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/734,553 external-priority patent/US20020071804A1/en
Priority claimed from US09/734,544 external-priority patent/US6497829B2/en
Priority claimed from US09/734,663 external-priority patent/US20020071803A1/en
Priority claimed from US09/734,543 external-priority patent/US6554897B2/en
Application filed by Silbid Ltd filed Critical Silbid Ltd
Publication of AU2001288020A1 publication Critical patent/AU2001288020A1/en
Abandoned legal-status Critical Current

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  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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AU2001288020A 2000-09-06 2001-09-05 Method of producing silicon carbide and various forms thereof Abandoned AU2001288020A1 (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US23044300P 2000-09-06 2000-09-06
US60/230,443 2000-09-06
US09/734,553 US20020071804A1 (en) 2000-09-06 2000-12-13 Method of producing silicon carbide: high temperature sensor elements
US09/734,544 US6497829B2 (en) 2000-09-06 2000-12-13 Method of producing silicon carbide: heating and lighting elements
US09/734,543 2000-12-13
US09/734,663 US20020071803A1 (en) 2000-09-06 2000-12-13 Method of producing silicon carbide power
US09/734,663 2000-12-13
US09/734,553 2000-12-13
US09/734,543 US6554897B2 (en) 2000-09-06 2000-12-13 Method of producing silicon carbide
US09/734,544 2000-12-13
PCT/IL2001/000834 WO2002021575A2 (en) 2000-09-06 2001-09-05 Method of producing silicon carbide and various forms thereof

Publications (1)

Publication Number Publication Date
AU2001288020A1 true AU2001288020A1 (en) 2002-03-22

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AU2001288020A Abandoned AU2001288020A1 (en) 2000-09-06 2001-09-05 Method of producing silicon carbide and various forms thereof

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AU (1) AU2001288020A1 (en)
WO (1) WO2002021575A2 (en)

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CN101896646A (en) * 2007-12-12 2010-11-24 陶氏康宁公司 Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes
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