WO2002021575A3 - Method of producing silicon carbide and various forms thereof - Google Patents

Method of producing silicon carbide and various forms thereof Download PDF

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Publication number
WO2002021575A3
WO2002021575A3 PCT/IL2001/000834 IL0100834W WO0221575A3 WO 2002021575 A3 WO2002021575 A3 WO 2002021575A3 IL 0100834 W IL0100834 W IL 0100834W WO 0221575 A3 WO0221575 A3 WO 0221575A3
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WO
WIPO (PCT)
Prior art keywords
silicon carbide
silicon
carbon
producing
various forms
Prior art date
Application number
PCT/IL2001/000834
Other languages
French (fr)
Other versions
WO2002021575A2 (en
Inventor
Gady Golan
Original Assignee
Silbid Ltd
Gady Golan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/734,663 external-priority patent/US20020071803A1/en
Priority claimed from US09/734,553 external-priority patent/US20020071804A1/en
Priority claimed from US09/734,544 external-priority patent/US6497829B2/en
Priority claimed from US09/734,543 external-priority patent/US6554897B2/en
Application filed by Silbid Ltd, Gady Golan filed Critical Silbid Ltd
Priority to AU2001288020A priority Critical patent/AU2001288020A1/en
Publication of WO2002021575A2 publication Critical patent/WO2002021575A2/en
Publication of WO2002021575A3 publication Critical patent/WO2002021575A3/en

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Abstract

A method of producing silicon carbide by introducing into the interior of a furnace a quantity of relatively pure elemental silicon and a quantity of elemental carbon; subjecting the interior of the furnace to a vacuum; and heating the silicon and carbon to a temperature of 1500 °C-2200 °C to vaporize the silicon and to react it with the carbon to produce silicon carbide. Several embodiments are described for producing a heating or lighting element or high temperature sensor. The carbon is shaped with the aid of a binder and silicon particles are applied to the outer surfaces. A further embodiment for producing silicon carbide powder is also described.
PCT/IL2001/000834 2000-09-06 2001-09-05 Method of producing silicon carbide and various forms thereof WO2002021575A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001288020A AU2001288020A1 (en) 2000-09-06 2001-09-05 Method of producing silicon carbide and various forms thereof

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US23044300P 2000-09-06 2000-09-06
US60/230,443 2000-09-06
US09/734,663 US20020071803A1 (en) 2000-09-06 2000-12-13 Method of producing silicon carbide power
US09/734,544 2000-12-13
US09/734,553 US20020071804A1 (en) 2000-09-06 2000-12-13 Method of producing silicon carbide: high temperature sensor elements
US09/734,544 US6497829B2 (en) 2000-09-06 2000-12-13 Method of producing silicon carbide: heating and lighting elements
US09/734,663 2000-12-13
US09/734,553 2000-12-13
US09/734,543 2000-12-13
US09/734,543 US6554897B2 (en) 2000-09-06 2000-12-13 Method of producing silicon carbide

Publications (2)

Publication Number Publication Date
WO2002021575A2 WO2002021575A2 (en) 2002-03-14
WO2002021575A3 true WO2002021575A3 (en) 2002-07-25

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RU2495163C2 (en) * 2007-12-12 2013-10-10 Доу Корнинг Корпорейшн Method for obtaining large homogeneous crystals of silicon carbide using distillation and condensation processes
DE112014004056T5 (en) * 2013-09-06 2016-06-02 Gtat Corporation Method and apparatus for producing bulk silicon carbide from a silicon carbide precursor
CN113372121A (en) * 2021-08-03 2021-09-10 哈尔滨科友半导体产业装备与技术研究院有限公司 Method for preparing porous SiC by using waste graphite crucible
CN116903377B (en) * 2023-08-10 2024-09-27 扎赉诺尔煤业有限责任公司 Method for preparing SiC-based porous material by utilizing lignite and fumed silica
CN116924807A (en) * 2023-08-10 2023-10-24 扎赉诺尔煤业有限责任公司 Method for preparing SiC-based powder by utilizing reaction of lignite and silicon and application

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