JP2012523711A5 - - Google Patents
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- Publication number
- JP2012523711A5 JP2012523711A5 JP2012504904A JP2012504904A JP2012523711A5 JP 2012523711 A5 JP2012523711 A5 JP 2012523711A5 JP 2012504904 A JP2012504904 A JP 2012504904A JP 2012504904 A JP2012504904 A JP 2012504904A JP 2012523711 A5 JP2012523711 A5 JP 2012523711A5
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- layer
- electrode
- hafnium oxide
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000449 hafnium oxide Inorganic materials 0.000 description 13
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16853409P | 2009-04-10 | 2009-04-10 | |
| US61/168,534 | 2009-04-10 | ||
| US12/608,934 US8183553B2 (en) | 2009-04-10 | 2009-10-29 | Resistive switching memory element including doped silicon electrode |
| US12/608,934 | 2009-10-29 | ||
| US12/610,236 | 2009-10-30 | ||
| US12/610,236 US8975613B1 (en) | 2007-05-09 | 2009-10-30 | Resistive-switching memory elements having improved switching characteristics |
| US12/705,474 | 2010-02-12 | ||
| US12/705,474 US8343813B2 (en) | 2009-04-10 | 2010-02-12 | Resistive-switching memory elements having improved switching characteristics |
| PCT/US2010/030619 WO2010118380A2 (en) | 2009-04-10 | 2010-04-09 | Resistive-switching memory elements having improved switching characteristics |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012523711A JP2012523711A (ja) | 2012-10-04 |
| JP2012523711A5 true JP2012523711A5 (enExample) | 2015-03-26 |
| JP5716012B2 JP5716012B2 (ja) | 2015-05-13 |
Family
ID=42936898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012504904A Expired - Fee Related JP5716012B2 (ja) | 2009-04-10 | 2010-04-09 | スイッチング特性を改善した抵抗スイッチングメモリ素子 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5716012B2 (enExample) |
| KR (1) | KR20120006502A (enExample) |
| WO (1) | WO2010118380A2 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8395927B2 (en) | 2010-06-18 | 2013-03-12 | Sandisk 3D Llc | Memory cell with resistance-switching layers including breakdown layer |
| US8520425B2 (en) | 2010-06-18 | 2013-08-27 | Sandisk 3D Llc | Resistive random access memory with low current operation |
| US8724369B2 (en) | 2010-06-18 | 2014-05-13 | Sandisk 3D Llc | Composition of memory cell with resistance-switching layers |
| JP2013004655A (ja) * | 2011-06-15 | 2013-01-07 | Sharp Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US8546275B2 (en) * | 2011-09-19 | 2013-10-01 | Intermolecular, Inc. | Atomic layer deposition of hafnium and zirconium oxides for memory applications |
| JP2013122985A (ja) * | 2011-12-12 | 2013-06-20 | Toshiba Corp | 半導体記憶装置 |
| EP3763839A1 (en) * | 2012-01-07 | 2021-01-13 | Kabushiki Kaisha Toshiba | Tungsten alloy, tungsten alloy part using the same, discharge lamp, transmitting tube, and magnetron |
| US8581224B2 (en) * | 2012-01-20 | 2013-11-12 | Micron Technology, Inc. | Memory cells |
| US8878152B2 (en) * | 2012-02-29 | 2014-11-04 | Intermolecular, Inc. | Nonvolatile resistive memory element with an integrated oxygen isolation structure |
| EP2695966B1 (en) * | 2012-08-06 | 2018-10-03 | IMEC vzw | ALD method |
| KR101956794B1 (ko) * | 2012-09-20 | 2019-03-13 | 에스케이하이닉스 주식회사 | 가변 저항 메모리 장치 및 그 제조 방법 |
| KR101977271B1 (ko) * | 2013-04-05 | 2019-05-10 | 에스케이하이닉스 주식회사 | 반도체 장치의 제조 방법 |
| CN103441214B (zh) * | 2013-08-02 | 2015-10-21 | 浙江大学 | 一种阻变存储器的制备方法 |
| JP6222690B2 (ja) * | 2013-08-05 | 2017-11-01 | マイクロンメモリジャパン株式会社 | 抵抗変化素子 |
| FR3019376B1 (fr) * | 2014-03-26 | 2016-04-01 | Commissariat Energie Atomique | Dispositif de memoire vive resistive |
| JP6297754B2 (ja) * | 2014-12-09 | 2018-03-20 | シメトリックス・メモリー・エルエルシー | ドープされたバッファ領域を有する遷移金属酸化物抵抗スイッチングデバイス |
| EP3234998A4 (en) | 2014-12-18 | 2018-08-15 | Intel Corporation | Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same |
| WO2016105407A1 (en) * | 2014-12-24 | 2016-06-30 | Intel Corporation | Resistive memory cells and precursors thereof, methods of making the same, and devices including the same |
| KR102395193B1 (ko) * | 2015-10-27 | 2022-05-06 | 삼성전자주식회사 | 메모리 소자 및 그 제조 방법 |
| US9978942B2 (en) * | 2016-09-20 | 2018-05-22 | Arm Ltd. | Correlated electron switch structures and applications |
| JP2019057544A (ja) | 2017-09-19 | 2019-04-11 | 東芝メモリ株式会社 | 記憶素子 |
| KR102345845B1 (ko) * | 2018-12-17 | 2021-12-31 | 세종대학교산학협력단 | 세륨 산화물막을 활성층으로 포함하는 저항 변화 메모리 소자 |
| CN112002801B (zh) * | 2020-07-20 | 2021-09-07 | 厦门半导体工业技术研发有限公司 | 半导体器件和半导体器件的制造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100621914B1 (ko) * | 2004-08-13 | 2006-09-14 | 한국화학연구원 | 원자층 침착법으로 하프늄 산화물 박막을 제조하는 방법 |
| KR100636796B1 (ko) * | 2005-08-12 | 2006-10-20 | 한양대학교 산학협력단 | 반도체 소자 및 그 제조방법 |
| KR100959755B1 (ko) * | 2006-02-28 | 2010-05-25 | 동국대학교 산학협력단 | 저항 변화 메모리 장치용 가변 저항 산화막의 제조방법 |
| KR101206034B1 (ko) * | 2006-05-19 | 2012-11-28 | 삼성전자주식회사 | 산소결핍 금속산화물을 이용한 비휘발성 메모리 소자 및 그제조방법 |
| US8101937B2 (en) * | 2007-07-25 | 2012-01-24 | Intermolecular, Inc. | Multistate nonvolatile memory elements |
| KR100983175B1 (ko) * | 2008-07-03 | 2010-09-20 | 광주과학기술원 | 산화물막과 고체 전해질막을 구비하는 저항 변화 메모리소자, 및 이의 동작방법 |
| JP4633199B2 (ja) * | 2008-10-01 | 2011-02-16 | パナソニック株式会社 | 不揮発性記憶素子並びにそれを用いた不揮発性記憶装置 |
| WO2010073897A1 (ja) * | 2008-12-26 | 2010-07-01 | 日本電気株式会社 | 抵抗変化素子 |
-
2010
- 2010-04-09 JP JP2012504904A patent/JP5716012B2/ja not_active Expired - Fee Related
- 2010-04-09 WO PCT/US2010/030619 patent/WO2010118380A2/en not_active Ceased
- 2010-04-09 KR KR1020117023491A patent/KR20120006502A/ko not_active Ceased
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