JP2012525692A5 - - Google Patents

Download PDF

Info

Publication number
JP2012525692A5
JP2012525692A5 JP2012507683A JP2012507683A JP2012525692A5 JP 2012525692 A5 JP2012525692 A5 JP 2012525692A5 JP 2012507683 A JP2012507683 A JP 2012507683A JP 2012507683 A JP2012507683 A JP 2012507683A JP 2012525692 A5 JP2012525692 A5 JP 2012525692A5
Authority
JP
Japan
Prior art keywords
dielectric layer
metal
layer
component according
optoelectronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012507683A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012525692A (ja
JP5740551B2 (ja
Filing date
Publication date
Priority claimed from DE200910022900 external-priority patent/DE102009022900A1/de
Application filed filed Critical
Publication of JP2012525692A publication Critical patent/JP2012525692A/ja
Publication of JP2012525692A5 publication Critical patent/JP2012525692A5/ja
Application granted granted Critical
Publication of JP5740551B2 publication Critical patent/JP5740551B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012507683A 2009-04-30 2010-04-21 光電構成素子およびその製造方法 Expired - Fee Related JP5740551B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009019520.3 2009-04-30
DE102009019520 2009-04-30
DE102009022900.0 2009-05-27
DE200910022900 DE102009022900A1 (de) 2009-04-30 2009-05-27 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
PCT/EP2010/055289 WO2010124979A1 (de) 2009-04-30 2010-04-21 Optoelektronisches bauelement und verfahren zu dessen herstellung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015000285A Division JP2015130344A (ja) 2009-04-30 2015-01-05 光電構成素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2012525692A JP2012525692A (ja) 2012-10-22
JP2012525692A5 true JP2012525692A5 (enExample) 2013-05-02
JP5740551B2 JP5740551B2 (ja) 2015-06-24

Family

ID=42979234

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012507683A Expired - Fee Related JP5740551B2 (ja) 2009-04-30 2010-04-21 光電構成素子およびその製造方法
JP2015000285A Granted JP2015130344A (ja) 2009-04-30 2015-01-05 光電構成素子およびその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015000285A Granted JP2015130344A (ja) 2009-04-30 2015-01-05 光電構成素子およびその製造方法

Country Status (7)

Country Link
US (2) US8680563B2 (enExample)
EP (1) EP2425037A1 (enExample)
JP (2) JP5740551B2 (enExample)
KR (1) KR20120042747A (enExample)
CN (1) CN102439197B (enExample)
DE (1) DE102009022900A1 (enExample)
WO (1) WO2010124979A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009022900A1 (de) * 2009-04-30 2010-11-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102010040839B4 (de) * 2010-09-15 2013-10-17 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektronsichen Bauelements und elektronisches Bauelement
US20130242533A1 (en) * 2011-09-12 2013-09-19 Appotronics Corporation Limited Method and apparatus for a color filter
CN103999232B (zh) * 2012-03-06 2015-10-14 国立研究开发法人科学技术振兴机构 多量子阱太阳能电池及多量子阱太阳能电池的制造方法
KR101387918B1 (ko) * 2012-04-30 2014-04-23 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조 방법
FR2992098A1 (fr) * 2012-06-19 2013-12-20 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede de fabrication.
CN102728238B (zh) * 2012-07-06 2015-02-18 南京工业大学 聚丙烯分离膜表面改性的方法
US9570662B2 (en) * 2012-07-10 2017-02-14 Osram Opto Semiconductors Gmbh Method of encapsulating an optoelectronic device and light-emitting diode chip
CN103840089B (zh) 2012-11-20 2016-12-21 群康科技(深圳)有限公司 有机发光二极管装置及其显示面板
JP2014149994A (ja) * 2013-02-01 2014-08-21 Denso Corp 表示装置の製造方法
CN104009180A (zh) * 2013-02-26 2014-08-27 海洋王照明科技股份有限公司 有机电致发光器件及其制备方法
US20160043247A1 (en) * 2013-03-15 2016-02-11 Arkema Inc. Nitrogen-containing transparent conductive oxide cap layer composition
JP6119408B2 (ja) * 2013-05-09 2017-04-26 ソニー株式会社 原子層堆積装置
EP2918701A1 (en) * 2014-03-14 2015-09-16 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method of manufacturing a stacked organic light emitting diode, stacked OLED device, and apparatus for manufacturing thereof
FR3020179B1 (fr) * 2014-04-22 2017-10-06 Saint Gobain Electrode supportee transparente pour oled
DE102014111346B4 (de) * 2014-08-08 2022-11-03 Pictiva Displays International Limited Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung
US9490453B2 (en) * 2014-10-06 2016-11-08 Winbond Electronics Corp. Quasi-crystal organic light-emitting display panel and method for simulating optical efficiency of the same
DE102015112681B4 (de) * 2015-08-03 2025-08-28 Pictiva Displays International Limited Organisches optoelektronisches Bauelement und Verfahren zum Herstellen eines organischen optoelektronischen Bauelements
DE102016103059A1 (de) * 2016-02-22 2017-08-24 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
CN106784350A (zh) * 2016-12-23 2017-05-31 京东方科技集团股份有限公司 一种有机电致发光显示面板及其制作方法、显示装置
CN108123050B (zh) * 2017-12-04 2020-05-12 武汉华美晨曦光电有限责任公司 一种以交流驱动的白光oled器件
DE102020113616A1 (de) * 2020-02-24 2021-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Hartmaskenschicht unter einer durchkontaktierungsstruktur in einer anzeigevorrichtung
US11682692B2 (en) 2020-02-24 2023-06-20 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask layer below via structure in display device

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI92897C (fi) * 1993-07-20 1995-01-10 Planar International Oy Ltd Menetelmä kerrosrakenteen valmistamiseksi elektroluminenssikomponentteja varten
JP3561549B2 (ja) 1995-04-07 2004-09-02 三洋電機株式会社 有機エレクトロルミネッセンス素子
CN1130956C (zh) 1996-07-29 2003-12-10 剑桥显示技术有限公司 具有电极保护的场致发光元件
JPH11224781A (ja) 1998-02-05 1999-08-17 Pioneer Electron Corp 有機elディスプレイ及びその製造方法
JP2000268973A (ja) * 1999-03-17 2000-09-29 Tdk Corp 有機el素子
KR100692598B1 (ko) * 1999-09-22 2007-04-13 한국전자통신연구원 이중 절연층을 갖는 유기전기발광소자의 구조 및 제조방법
DE10049257B4 (de) 1999-10-06 2015-05-13 Samsung Electronics Co., Ltd. Verfahren zur Dünnfilmerzeugung mittels atomarer Schichtdeposition
US6576053B1 (en) 1999-10-06 2003-06-10 Samsung Electronics Co., Ltd. Method of forming thin film using atomic layer deposition method
US7560175B2 (en) * 1999-12-31 2009-07-14 Lg Chem, Ltd. Electroluminescent devices with low work function anode
JP4556282B2 (ja) * 2000-03-31 2010-10-06 株式会社デンソー 有機el素子およびその製造方法
JP2002208479A (ja) * 2001-01-05 2002-07-26 Toppan Printing Co Ltd 有機led素子用中間抵抗膜付基板および有機led素子
GB0111751D0 (en) * 2001-05-14 2001-07-04 Opsys Ltd A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
US20040195966A1 (en) 2001-05-14 2004-10-07 Conway Natasha M J Method of providing a layer including a metal or silicon or germanium and oxygen on a surface
KR101208396B1 (ko) 2002-07-19 2012-12-05 이데미쓰 고산 가부시키가이샤 유기 전기발광 소자 및 유기 발광 매체
JP2005259550A (ja) * 2004-03-12 2005-09-22 Idemitsu Kosan Co Ltd 有機el素子及び表示装置
US7183707B2 (en) 2004-04-12 2007-02-27 Eastman Kodak Company OLED device with short reduction
DE102004022004B4 (de) * 2004-05-03 2007-07-05 Novaled Ag Schichtanordnung für eine organische lichtemittierende Diode
WO2006014591A2 (en) * 2004-07-08 2006-02-09 Itn Energy Systems, Inc. Permeation barriers for flexible electronics
JP2007090803A (ja) * 2005-09-30 2007-04-12 Fujifilm Corp ガスバリアフィルム、並びに、これを用いた画像表示素子および有機エレクトロルミネッセンス素子
US20070221926A1 (en) * 2006-01-04 2007-09-27 The Regents Of The University Of California Passivating layer for flexible electronic devices
US7564063B2 (en) * 2006-03-23 2009-07-21 Eastman Kodak Company Composite electrode for light-emitting device
US20080100202A1 (en) * 2006-11-01 2008-05-01 Cok Ronald S Process for forming oled conductive protective layer
KR20080051572A (ko) * 2006-12-06 2008-06-11 주성엔지니어링(주) 유기 전계 발광 소자 및 그 제조 방법
JP2009081409A (ja) * 2007-04-27 2009-04-16 Fujifilm Corp 有機電界発光素子
US7911133B2 (en) * 2007-05-10 2011-03-22 Global Oled Technology Llc Electroluminescent device having improved light output
US9660205B2 (en) 2007-06-22 2017-05-23 Regents Of The University Of Colorado Protective coatings for organic electronic devices made using atomic layer deposition and molecular layer deposition techniques
TWI420722B (zh) 2008-01-30 2013-12-21 歐斯朗奧托半導體股份有限公司 具有封裝單元之裝置
DE102009022900A1 (de) * 2009-04-30 2010-11-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Similar Documents

Publication Publication Date Title
JP2012525692A5 (enExample)
TWI576999B (zh) 包含覆有擴散阻障層的基板之電性元件及其製作方法
JP6685896B2 (ja) 太陽電池及びその製造方法
JP5848454B2 (ja) 太陽電池素子
JP2012523711A5 (enExample)
TW201145557A (en) Solar cell, and method of manufacturing the same
US9029690B2 (en) Semiconductor device, in particular solar cell
JP2013508552A5 (enExample)
CN107564844A (zh) 一种石墨舟饱和双层膜结构及镀膜工艺和石墨舟
WO2010091116A3 (en) Method of forming an anode material for a lithium ion battery
Khosla et al. High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications
CN108346716A (zh) 一种晶硅太阳能电池的制造工艺
WO2024060806A1 (zh) 二氧化锡薄膜及其制备方法和应用
US20140291142A1 (en) Photoelectrode for photoelectrochemical cell, method of manufacturing the same, and photoelectrochemical cell including the same
CN108767120A (zh) 一种利用碳量子点制备钙钛矿薄膜的方法及太阳能电池
JP2018516431A5 (enExample)
KR20050062132A (ko) 혼합유전막을 구비한 캐패시터 형성방법
Jiang et al. Influences of deposition and post-annealing temperatures on properties of TiO2 blocking layer prepared by spray pyrolysis for solid-state dye-sensitized solar cells
Kot et al. Prospects of improving efficiency and stability of hybrid perovskite solar cells by alumina ultrathin films
Wang et al. Performance enhancement of perovskite solar cells via modification of the TiO2/perovskite interface with oxygen plasma treatment
JP6109939B2 (ja) 太陽電池の製造方法
CN114497087B (zh) 显示面板及其制备方法
JP5018951B2 (ja) 電極
JP4742584B2 (ja) 電極
US20180216244A1 (en) Photoelectrode, method for producing same and photoelectrochemical cell