JP2012519650A5 - - Google Patents

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Publication number
JP2012519650A5
JP2012519650A5 JP2011554116A JP2011554116A JP2012519650A5 JP 2012519650 A5 JP2012519650 A5 JP 2012519650A5 JP 2011554116 A JP2011554116 A JP 2011554116A JP 2011554116 A JP2011554116 A JP 2011554116A JP 2012519650 A5 JP2012519650 A5 JP 2012519650A5
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JP
Japan
Prior art keywords
forming surface
semiconductor material
molten
providing
differential pressure
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JP2011554116A
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English (en)
Japanese (ja)
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JP2012519650A (ja
JP5715579B2 (ja
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Priority claimed from PCT/US2010/026639 external-priority patent/WO2010104838A1/en
Publication of JP2012519650A publication Critical patent/JP2012519650A/ja
Publication of JP2012519650A5 publication Critical patent/JP2012519650A5/ja
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Publication of JP5715579B2 publication Critical patent/JP5715579B2/ja
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JP2011554116A 2009-03-09 2010-03-09 薄い半導体本体を溶融物質から作成するための方法及び装置 Active JP5715579B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US20958209P 2009-03-09 2009-03-09
US61/209,582 2009-03-09
US22473009P 2009-07-10 2009-07-10
US61/224,730 2009-07-10
US23796509P 2009-08-28 2009-08-28
US61/237,965 2009-08-28
PCT/US2010/026639 WO2010104838A1 (en) 2009-03-09 2010-03-09 Methods and apparati for making thin semiconductor bodies from molten material

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015002173A Division JP6030672B2 (ja) 2009-03-09 2015-01-08 薄い半導体本体を溶融物質から作成するための方法及び装置

Publications (3)

Publication Number Publication Date
JP2012519650A JP2012519650A (ja) 2012-08-30
JP2012519650A5 true JP2012519650A5 (enExample) 2014-02-27
JP5715579B2 JP5715579B2 (ja) 2015-05-07

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ID=42728704

Family Applications (2)

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JP2011554116A Active JP5715579B2 (ja) 2009-03-09 2010-03-09 薄い半導体本体を溶融物質から作成するための方法及び装置
JP2015002173A Expired - Fee Related JP6030672B2 (ja) 2009-03-09 2015-01-08 薄い半導体本体を溶融物質から作成するための方法及び装置

Family Applications After (1)

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JP2015002173A Expired - Fee Related JP6030672B2 (ja) 2009-03-09 2015-01-08 薄い半導体本体を溶融物質から作成するための方法及び装置

Country Status (12)

Country Link
US (4) US20110247549A1 (enExample)
EP (1) EP2406413B1 (enExample)
JP (2) JP5715579B2 (enExample)
KR (1) KR101805096B1 (enExample)
CN (1) CN102421947B (enExample)
CA (3) CA3031880C (enExample)
ES (1) ES2680648T3 (enExample)
MX (1) MX336781B (enExample)
MY (1) MY160016A (enExample)
SG (1) SG173739A1 (enExample)
TW (1) TWI531691B (enExample)
WO (1) WO2010104838A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9050652B2 (en) 2008-11-14 2015-06-09 Carnegie Mellon University Methods for casting by a float process and associated apparatuses
ES2680648T3 (es) * 2009-03-09 2018-09-10 1366 Technologies Inc. Procedimientos de fabricación de cuerpos semiconductores delgados a partir de material fundido
US8685162B2 (en) * 2010-05-06 2014-04-01 Varian Semiconductor Equipment Associates, Inc. Removing a sheet from the surface of a melt using gas jets
US9267219B2 (en) 2010-05-06 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Gas-lift pumps for flowing and purifying molten silicon
US20120027996A1 (en) * 2010-07-27 2012-02-02 Glen Bennett Cook Mold shape to optimize thickness uniformity of silicon film
US20120129293A1 (en) * 2010-11-24 2012-05-24 Sergey Potapenko Methods of making an unsupported article of a semiconducting material using thermally active molds
US9419167B2 (en) 2010-12-01 2016-08-16 1366 Technologies, Inc. Making semiconductor bodies from molten material using a free-standing interposer sheet
CA2825772A1 (en) * 2011-01-26 2012-08-02 Yamaguchi University Silicon melt contact member, process for production thereof, and process for production of crystalline silicon
FR2978600B1 (fr) * 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
US9859348B2 (en) 2011-10-14 2018-01-02 Diftek Lasers, Inc. Electronic device and method of making thereof
WO2014001886A1 (en) 2012-06-27 2014-01-03 Rgs Development B.V. Film of polycrystalline semiconductor material, method of making same and orienting/undercooling molds therefor, and electronic device
WO2014001888A1 (en) 2012-06-27 2014-01-03 Rgs Development B.V. Film of polycrystalline semiconductor material, method of making same and undercooling molds therefor, and electronic device
US20140097432A1 (en) * 2012-10-09 2014-04-10 Corning Incorporated Sheet of semiconducting material, laminate, and system and methods for forming same
WO2015017098A1 (en) * 2013-07-31 2015-02-05 Christoph Sachs Use of silicon nitride as a substrate and a coating material for the rapid solidification of silicon
CN103924291A (zh) * 2014-04-25 2014-07-16 南昌欧菲光学技术有限公司 一种平板型蓝宝石长晶装置及方法
ES2864962T3 (es) * 2014-04-30 2021-10-14 1366 Tech Inc Procedimientos y aparatos para fabricar obleas semiconductoras delgadas con regiones controladas localmente que son relativamente más gruesas que otras regiones
EP2953158A3 (en) 2014-06-04 2016-02-17 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
JP6850004B2 (ja) * 2015-04-29 2021-03-31 １３６６ テクノロジーズ インク． 材料が消費及び補給される溶融材料の含有体積を維持する方法
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
JP6857517B2 (ja) 2016-06-16 2021-04-14 ディフテック レーザーズ インコーポレイテッド 基板上に結晶アイランドを製造する方法
JP6915526B2 (ja) * 2017-12-27 2021-08-04 信越半導体株式会社 炭化珪素単結晶の製造方法
AR115182A3 (es) * 2018-10-30 2020-12-09 R Neto S A Intercambiador aéreo geotérmico vertical
US11121125B2 (en) * 2018-12-12 2021-09-14 Micron Technology, Inc. Thermal chamber for a thermal control component
US11334129B2 (en) 2019-12-11 2022-05-17 Micron Technology, Inc. Temperature control component for electronic systems
CN113921639A (zh) * 2020-10-12 2022-01-11 上海晶澳太阳能科技有限公司 硅片及制备方法、电池片、电池切片、电池串及光伏组件
IL309370B2 (en) 2021-06-16 2025-07-01 Conti Spe Llc Mechanically stacked solar transmissive cells or modules
CN116175930A (zh) * 2021-09-08 2023-05-30 僖昴晰(上海)新材料有限公司 在模具中制作中空流体管道以及制作带有中空流体管道的模具的方法
CN117987932B (zh) * 2024-04-03 2024-06-11 常州臻晶半导体有限公司 一种籽晶粘接烧结的冲压装置及其方法
US12414402B1 (en) 2025-01-03 2025-09-09 Conti Innovation Center, Llc Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB801443A (en) 1956-09-05 1958-09-17 Standard Telephones Cables Ltd Semi-conductor devices and methods of manufacturing such devices
US3903841A (en) * 1974-08-22 1975-09-09 Gte Laboratories Inc Vacuum holder in epitaxial growth apparatus
DE3419137A1 (de) * 1984-05-23 1985-11-28 Bayer Ag, 5090 Leverkusen Verfahren und vorrichtung zur herstellung von halbleiterfolien
NL8600216A (nl) 1986-01-30 1987-08-17 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US5111871B1 (en) * 1989-03-17 1993-12-28 J. Cook Arnold Method of vacuum casting
JP3656821B2 (ja) 1999-09-14 2005-06-08 シャープ株式会社 多結晶シリコンシートの製造装置及び製造方法
JP4111669B2 (ja) 1999-11-30 2008-07-02 シャープ株式会社 シート製造方法、シートおよび太陽電池
JP4121697B2 (ja) * 1999-12-27 2008-07-23 シャープ株式会社 結晶シートの製造方法およびその製造装置
JP2003146640A (ja) * 2001-11-09 2003-05-21 Sharp Corp 半導体シートの製造方法、半導体シート製造装置および太陽電池
KR20040054811A (ko) 2001-11-30 2004-06-25 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스 및 그 제조 방법
JP2003226598A (ja) * 2002-02-01 2003-08-12 Sharp Corp 結晶シートの製造装置、製造方法、その方法により製造される結晶シートおよびその結晶シートを用いて得られる太陽電池
AU2003243966A1 (en) * 2002-06-28 2004-01-19 Sharp Kabushiki Kaisha Thin sheet production method and thin sheet production device
US7407550B2 (en) * 2002-10-18 2008-08-05 Evergreen Solar, Inc. Method and apparatus for crystal growth
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
JP2004149375A (ja) * 2002-10-31 2004-05-27 Sharp Corp 薄板製造方法および薄板製造装置
JP4467392B2 (ja) * 2004-09-24 2010-05-26 シャープ株式会社 結晶シートの製造方法
JP4294576B2 (ja) * 2004-11-17 2009-07-15 シャープ株式会社 薄板生成装置および薄板生成方法
JP5062767B2 (ja) * 2007-01-25 2012-10-31 独立行政法人産業技術総合研究所 シリコン基板の製造装置及び製造方法
CN101790774B (zh) * 2007-06-26 2012-05-02 麻省理工学院 半导体晶圆在薄膜包衣中的重结晶以及有关工艺
FR2918080B1 (fr) * 2007-06-29 2010-12-17 Commissariat Energie Atomique Dispositif et procede d'elaboration de plaquettes en materiau semi-conducteur par moulage et cristallisation dirigee
ES2680648T3 (es) * 2009-03-09 2018-09-10 1366 Technologies Inc. Procedimientos de fabricación de cuerpos semiconductores delgados a partir de material fundido

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